Abstract: It is provided a window of a vehicle, optoelectronic circuits, in particular optoelectronic circuits for a window of a vehicle and a method for manufacturing a window of a vehicle including at least one optoelectronic component. It is further provided a display comprising at least one display module each comprising at least one optoelectronic array with a plurality of optoelectronic components, each optoelectronic component forming a pixel comprising at least one subpixel, in particular a ?LED. In addition, a method for manufacturing a display module comprising at least one optoelectronic array with a plurality of optoelectronic components, each optoelectronic component forming a pixel comprising at least one subpixel, in particular a ?LED, is provided.

Abstract: An optoelectronic device comprises a plurality of optoelectronic light sources being arranged on a first layer, in particular an intermediate layer being arranged between a cover layer and a carrier layer. The first layer comprises or consists of an at least partially transparent material and each optoelectronic light source of the plurality of optoelectronic light sources comprises an individual light converter for converting light emitted by the associated light source into converted light. The light converter of each optoelectronic light source is arranged on the first layer and/or the associated optoelectronic light source.

Abstract: In one embodiment, the optoelectronic semiconductor device comprises at least two metallic lead frame parts and a circuit chip on the lead frame parts. An electrically insulating and opaque matrix material mechanically connects the lead frame parts. The circuit chip is embedded in the matrix material, so that a carrier is formed by the matrix material together with the lead frame parts and the circuit chip. An optoelectronic semiconductor chip is provided on a carrier upper side. Furthermore, the semiconductor device comprises at least one optical component on the carrier upper side.

Abstract: In an embodiment, a component includes a lead frame, a semiconductor chip and a housing body, wherein the lead frame has a first subregion and a second subregion laterally spaced from the first subregion, wherein the housing body laterally encloses the first subregion and the second subregion and thereby mechanically connects the first subregion to the second subregion, wherein the semiconductor chip is arranged on a mounting surface of the first subregion and is electrically conductively connected to the subregions of the lead frame, wherein the first subregion has a first local elevation, which vertically projects beyond at least one edge region of the first subregion, and, in top view of the mounting surface, at least partially surrounds the semiconductor chip, and wherein, in the top view of the mounting surface, the housing body completely covers the first local elevation and does not cover the semiconductor chip.

Abstract: The invention relates to a method for producing a plurality of optoelectronic semiconductor components, comprising the steps: a) providing a carrier composite having a plurality of component regions; b) forming a filter layer on the carrier composite; c) forming a radiation conversion layer on the filter layer; d) arranging a plurality of semiconductor bodies on the radiation conversion layer, wherein the semiconductor bodies each have a semiconductor layer sequence having an active region provided for radiation generation and are free of a substrate stabilizing the semiconductor body; e) forming a contact layer for producing an electrical connection between the semiconductor bodies; f) forming an insulation layer on the contact layer; g) forming electrical contact surfaces, each of which are electrically conductively connected to the contact layer; and h) separating the carrier composite into the optoelectronic semiconductor components.

Abstract: In at least one embodiment, the optoelectronic component comprises an optoelectronic semiconductor chip with an emission side and a rear side opposite the emission side. Furthermore, the component comprises a housing body with a top side and an underside opposite the top side, and a metal layer on the top side of the housing body. During proper operation, the semiconductor chip emits primary electromagnetic radiation via the emission side. The semiconductor chip is embedded in the housing body and laterally surrounded by the housing body. The emission side is on the rear side and the top side is downstream of the underside along a main emission direction of the semiconductor chip. The metal layer is at least partially reflecting or absorbing radiation generated by the optoelectronic component.

Abstract: An optoelectronic device includes a glass carrier, at least one light-scattering layer applied to the glass carrier, and at least one surface-emitting component in a chip size package with an emission surface and a surface facing away from the emission surface having a first and a second contact pad. The emission surface is arranged on the at least one light-scattering layer by way of an adhesive. At least one contact line contacts the second contact pad of the at least one surface-emitting component and extends along a side surface of the at least one surface-emitting component adjacent to the second contact pad in a direction of the glass carrier. A light-shaping structure is arranged on a surface of the glass carrier facing away from the surface-emitting component.

Abstract: The Invention relates to a housing for an optoelectronic semiconductor component, comprising: a housing main body, which has a chip mounting side, at least two electrical conducting structures in and/or on the housing main body, and a plurality of drainage structures on the chip mounting side. The electrical conducting structures form, on the chip mounting side, electrical contact surfaces for at least one optoelectronic semiconductor chip and the drainage structure are designed as means for feeding a liquid potting material to the electrical contact surfaces.

Abstract: The invention relates to a component (100) having an electrically insulating and radiation-transparent substrate (9) and at least one semiconductor chip (10) arranged on the substrate (9). The semiconductor chip (10) is designed to generate electromagnetic radiation and has a front side (11) and a rear side (12) facing away from the front side (11), wherein the front side (11) of the semiconductor chip (10) faces the substrate (9) and is designed as a radiation exit face of the semiconductor chip (10), and wherein the rear side (12) of the semiconductor chip (10) faces away from the substrate (9), wherein the semiconductor chip (10) can be electrically contacted externally via the rear side (12). The invention further relates to a method for producing such a component.

Abstract: The invention relates to a method for controlling a current to a light-emitting diode in order for it to emit a desired light flux, wherein the current is determined depending on a time period during which the light-emitting diode is supplied with current, in order to generate the desired light flux for said light-emitting diode.

Abstract: An optoelectronic component includes at least one optoelectronic semiconductor chip with a main surface on which two electrical contacts are arranged. The optoelectronic component also includes a control chip for controlling the optoelectronic semiconductor chip with a plurality of electrical connection pads. The optoelectronic component further includes a housing with a housing body. The optoelectronic semiconductor chip is arranged with a mounting surface, which extends transversely to the main surface, in a first recess of the housing body. A side surface of the first recess forms an obtuse tilt angle with a bottom surface of the first recess. At least one of the electrical contacts of the optoelectronic semiconductor chip is electrically conductively connected to an electrical connection pad of the control chip via a conductor path. The conductor path is arranged at least in places on the side surface of the first recess.

Abstract: In an embodiment a method for singulating components from a component composite includes providing the component composite comprising a structured substrate including component carrier bodies and connecting portions arranged between the component carrier bodies, and a base material, in which the connecting portions of the structured substrate are at least partially embedded, removing the base material in separating regions of the component composite, which include the connecting portions and singulating the component composite at the separating regions to form the components.

Abstract: In one embodiment, an optoelectronic semiconductor device includes at least two lead frame parts and an optoelectronic semiconductor chip which is mounted in a mounting region on one of the lead frame parts. The lead frame parts are mechanically connected to one another via a casting body. The semiconductor chip is embedded in the cast body. In the mounting region the respective lead frame part has a reduced thickness. An electrical line is led over the cast body from the semiconductor chip to a connection region of the other of the lead frame parts. In the connection region, the respective lead frame part has the full thickness. From the connection region to the semiconductor chip the electrical line does not overcome any significant difference in height.

Abstract: An optoelectronic apparatus comprises a transparent first cover, at least layer two carriers mounted on the first cover, wherein a plurality of optoelectronic elements configured to emit light are attached to each of the at least two carriers, and a second cover mounted on the at least two carriers, wherein the second cover has at least partially a lower optical transmittance than the first cover and/or the at least two carriers.

Abstract: An optoelectronic device, in particular an at least semi-transparent pane for example for a vehicle, comprises: a cover layer, a carrier layer, an intermediate layer between the cover layer and the carrier layer, wherein at least one and preferably a plurality of optoelectronic light sources, in particular ?LEDS, is arranged on at least one surface of the intermediate layer and/or is at least partially embedded in the intermediate layer, wherein the intermediate layer is adapted such that light emitted by the optoelectronic light sources at least partially spreads in and along the intermediate layer and exits the intermediate layer within and/or at a pre-set distance to the respective optoelectronic light source in a direction through the cover layer and/or through the carrier layer.

Abstract: An optoelectronic device comprises a plurality of layer segments, in particular intermediate layer segments, arranged between a cover layer and a carrier layer. At least one optoelectronic component is arranged on at least one of the plurality of layer segments and a first and a second layer segment of the plurality of the layer segments are overlapping each other along a first direction each forming a respective boundary region. The first layer segment comprises at least one first contact pad and the second layer segment comprises at least one second contact pad, wherein the at least one first and second contact pad are arranged in the respective boundary region facing each other and being mechanically and electrically connected. The at least one first and second contact pad each comprises a plurality of nanowires which are at least partially made of conductive material such as for example copper, gold, or nickel.

Abstract: An optoelectronic component is specified, with an optoelectronic semiconductor chip which, in operation, is configured to emit or detect electromagnetic radiation, a connection carrier, on which the semiconductor chip is arranged, an electrically conductive connection, which is electrically conductively connected to the semiconductor chip and/or the connection carrier, and an electrically insulating material, which surrounds the semiconductor chip and/or the connection carrier at least in places, wherein the electrically conductive connection is arranged in places on the electrically insulating material. Furthermore, a method for producing an optoelectronic component is specified.

Abstract: An optoelectronic device comprises a plurality of optoelectronic light sources being arranged on a first layer, in particular an intermediate layer being arranged between a cover layer and a carrier layer. The first layer comprises or consists of an at least partially transparent material and each optoelectronic light source of the plurality of optoelectronic light sources comprises an individual light converter for converting light emitted by the associated light source into converted light. The light converter of each optoelectronic light source is arranged on the first layer and/or the associated optoelectronic light source.

Abstract: An optoelectronic device comprises a layer stack, which includes a carrier layer, a cover layer, and a first layer. The first layer is in particular an intermediate layer, arranged between the cover layer and the carrier layer. At least one electronic or optoelectronic element, in particular an optoelectronic light source, is arranged on the first layer and at least one layer of the layer stack and preferably all layers of the layer stack are at least partially transparent. The layer stack comprises at least one layer which comprises particles with a high thermal conductivity and/or at least one thermally conductive layer which is arranged between two adjacent layers of the layer stack.

Abstract: An optoelectronic semiconductor chip, a method for manufacturing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence having an emission side, the emission side comprising a plurality of emission fields, partition walls on the emission side in a region between two adjacent emission fields and a conversion element on one or more emission fields, wherein the conversion element includes a matrix material with first phosphor particles incorporated therein, wherein the first phosphor particles are sedimented in the matrix material such that a mass fraction of the first phosphor particles is greater in a lower region of the conversion element facing the semiconductor layer sequence than in a remaining region of the conversion element, and wherein the partition walls are attached to the emission side without any additional connectors.