Abstract: An optoelectronic apparatus comprises a transparent first cover, at least layer two carriers mounted on the first cover, wherein a plurality of optoelectronic elements configured to emit light are attached to each of the at least two carriers, and a second cover mounted on the at least two carriers, wherein the second cover has at least partially a lower optical transmittance than the first cover and/or the at least two carriers.

Abstract: An optoelectronic device, in particular an at least semi-transparent pane for example for a vehicle, comprises: a cover layer, a carrier layer, an intermediate layer between the cover layer and the carrier layer, wherein at least one and preferably a plurality of optoelectronic light sources, in particular ?LEDS, is arranged on at least one surface of the intermediate layer and/or is at least partially embedded in the intermediate layer, wherein the intermediate layer is adapted such that light emitted by the optoelectronic light sources at least partially spreads in and along the intermediate layer and exits the intermediate layer within and/or at a pre-set distance to the respective optoelectronic light source in a direction through the cover layer and/or through the carrier layer.

Abstract: An optoelectronic device comprises a plurality of layer segments, in particular intermediate layer segments, arranged between a cover layer and a carrier layer. At least one optoelectronic component is arranged on at least one of the plurality of layer segments and a first and a second layer segment of the plurality of the layer segments are overlapping each other along a first direction each forming a respective boundary region. The first layer segment comprises at least one first contact pad and the second layer segment comprises at least one second contact pad, wherein the at least one first and second contact pad are arranged in the respective boundary region facing each other and being mechanically and electrically connected. The at least one first and second contact pad each comprises a plurality of nanowires which are at least partially made of conductive material such as for example copper, gold, or nickel.

Abstract: An optoelectronic component is specified, with an optoelectronic semiconductor chip which, in operation, is configured to emit or detect electromagnetic radiation, a connection carrier, on which the semiconductor chip is arranged, an electrically conductive connection, which is electrically conductively connected to the semiconductor chip and/or the connection carrier, and an electrically insulating material, which surrounds the semiconductor chip and/or the connection carrier at least in places, wherein the electrically conductive connection is arranged in places on the electrically insulating material. Furthermore, a method for producing an optoelectronic component is specified.

Abstract: An optoelectronic device comprises a plurality of optoelectronic light sources being arranged on a first layer, in particular an intermediate layer being arranged between a cover layer and a carrier layer. The first layer comprises or consists of an at least partially transparent material and each optoelectronic light source of the plurality of optoelectronic light sources comprises an individual light converter for converting light emitted by the associated light source into converted light. The light converter of each optoelectronic light source is arranged on the first layer and/or the associated optoelectronic light source.

Abstract: An optoelectronic device comprises a layer stack, which includes a carrier layer, a cover layer, and a first layer. The first layer is in particular an intermediate layer, arranged between the cover layer and the carrier layer. At least one electronic or optoelectronic element, in particular an optoelectronic light source, is arranged on the first layer and at least one layer of the layer stack and preferably all layers of the layer stack are at least partially transparent. The layer stack comprises at least one layer which comprises particles with a high thermal conductivity and/or at least one thermally conductive layer which is arranged between two adjacent layers of the layer stack.

Abstract: An optoelectronic semiconductor chip, a method for manufacturing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence having an emission side, the emission side comprising a plurality of emission fields, partition walls on the emission side in a region between two adjacent emission fields and a conversion element on one or more emission fields, wherein the conversion element includes a matrix material with first phosphor particles incorporated therein, wherein the first phosphor particles are sedimented in the matrix material such that a mass fraction of the first phosphor particles is greater in a lower region of the conversion element facing the semiconductor layer sequence than in a remaining region of the conversion element, and wherein the partition walls are attached to the emission side without any additional connectors.

Abstract: In one embodiment, the optoelectronic semiconductor device comprises at least two metallic lead frame parts and a circuit chip on the lead frame parts. An electrically insulating and opaque matrix material mechanically connects the lead frame parts. The circuit chip is embedded in the matrix material, so that a carrier is formed by the matrix material together with the lead frame parts and the circuit chip. An optoelectronic semiconductor chip is provided on a carrier upper side. Furthermore, the semiconductor device comprises at least one optical component on the carrier upper side.

Abstract: An optoelectronic semiconductor component includes a semiconductor body having a main emission surface and an active region arranged to emit electromagnetic radiation. The optoelectronic semiconductor component also includes a receiving element arranged on the side of the semiconductor body opposite to the main emission surface. The optoelectronic semiconductor component also includes a radiation-transmissive molding compound. The radiation-transmissive molding compound completely surrounds the semiconductor body and the receiving element. A receiver frequency is assigned to the receiving element. The receiving element is configured to extract energy for operating the active region from an alternating electromagnetic field.

Abstract: The invention relates to a method for controlling a current to a light-emitting diode in order for it to emit a desired light flux, wherein the current is determined depending on a time period during which the light-emitting diode is supplied with current, in order to generate the desired light flux for said light-emitting diode.

Abstract: In one embodiment, an optoelectronic semiconductor device includes at least two lead frame parts and an optoelectronic semiconductor chip which is mounted in a mounting region on one of the lead frame parts. The lead frame parts are mechanically connected to one another via a casting body. The semiconductor chip is embedded in the cast body. In the mounting region the respective lead frame part has a reduced thickness. An electrical line is led over the cast body from the semiconductor chip to a connection region of the other of the lead frame parts. In the connection region, the respective lead frame part has the full thickness. From the connection region to the semiconductor chip the electrical line does not overcome any significant difference in height.

Abstract: In at least one embodiment, the optoelectronic component comprises an optoelectronic semiconductor chip with an emission side and a rear side opposite the emission side. Furthermore, the component comprises a housing body with a top side and an underside opposite the top side, and a metal layer on the top side of the housing body. During proper operation, the semiconductor chip emits primary electromagnetic radiation via the emission side. The semiconductor chip is embedded in the housing body and laterally surrounded by the housing body. The emission side is on the rear side and the top side is downstream of the underside along a main emission direction of the semiconductor chip. The metal layer is at least partially reflecting or absorbing radiation generated by the optoelectronic component.

Abstract: An optoelectronic semiconductor chip, a method for manufacturing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence having an emission side, the emission side comprising a plurality of emission fields, partition walls on the emission side in a region between two adjacent emission fields and a conversion element on one or more emission fields, wherein the conversion element includes a matrix material with first phosphor particles incorporated therein, wherein the first phosphor particles are sedimented in the matrix material such that a mass fraction of the first phosphor particles is greater in a lower region of the conversion element facing the semiconductor layer sequence than in a remaining region of the conversion element, and wherein the partition walls are attached to the emission side without any additional connectors.

Abstract: A light source includes a plurality of semiconductor components, wherein a semiconductor component includes a plurality of light-emitting diodes, the diodes are arranged in a predefined grid in at least one column in or on the semiconductor component, and a control circuit that drives the individual diodes is arranged on the semiconductor component.

Abstract: An optoelectronic component includes a layer configured to generate an electromagnetic radiation including a first wavelength; a second layer including a conversion material and a scattering material, wherein the conversion material is configured to shift the first wavelength of the electromagnetic radiation to a second wavelength, and the scattering material is configured to scatter the first wavelength to a greater extent than the second wavelength.

Abstract: A light source includes a plurality of semiconductor components, wherein a semiconductor component includes a plurality of light-emitting diodes, the diodes are arranged in a predefined grid in at least one column in or on the semiconductor component, and a control circuit that drives the individual diodes is arranged on the semiconductor component.

Abstract: The invention concerns a semiconductor chip (100) with a semiconductor body (2) having a semiconductor layer sequence, and with a substrate body (4) and at least one upper side contact (8). In projection the semiconductor chip (100) has a shape which deviates from a rectangular shape. The invention also concerns a method of separating a composite into a plurality of semiconductor chips (100) along a separation pattern (15) with the steps enabling a plurality of semiconductor chips according to the invention to be produced.

Abstract: An optoelectronic component includes a leadframe, a molded body connected to the leadframe, and an optoelectronic semiconductor chip arranged on the leadframe, wherein the leadframe includes an alignment opening, and wherein the molded body includes a recess via which the leadframe is exposed in the area of the alignment opening.

Abstract: An optoelectronic component includes a leadframe, a molded body connected to the leadframe, and an optoelectronic semiconductor chip arranged on the leadframe, wherein the leadframe includes an alignment opening, and wherein the molded body includes a recess via which the leadframe is exposed in the area of the alignment opening.

Abstract: The invention concerns a semiconductor chip (100) with a semiconductor body (2) having a semiconductor layer sequence, and with a substrate body (4) and at least one upper side contact (8). In projection the semiconductor chip (100) has a shape which deviates from a rectangular shape. The invention also concerns a method of separating a composite into a plurality of semiconductor chips (100) along a separation pattern (15) with the steps enabling a plurality of semiconductor chips according to the invention to be produced.