Abstract: In a method of producing a doped semiconductor structure with a trench, it is possible to set the doping of the trench side walls independently from the doping of the trench bottom, and to set different doping concentrations of the individual trench side walls relative to each other. In the method, a mask layer with a window therein is provided on a surface of a semiconductor body, and then a first doping step, a trench etching step, and a second doping step are carried out successively through this window while this one mask layer remains in place on the surface of the semiconductor body. Further etching and doping steps can be carried out successively also through this window of the mask layer.

Abstract: An SOI wafer including an active semiconductor material layer on an insulating layer is processed to form thereon first and second active semiconductor regions that respectively have different thicknesses and that are vertically and laterally insulated. In the process, a trench is etched into the SOI wafer, seed openings are formed in the bottom of the trench to reach the underlying active material layer, the trench is filled with epitaxially grown semiconductor material progressing from the seed openings, some of the epitaxially grown material is removed to form the second active regions, and oxide layers are provided so that the second active regions are laterally and vertically insulated from the first active regions formed by remaining portions of the active semiconductor material layer.

Abstract: Vertically insulated active semiconductor regions having different thicknesses in an SOI wafer, which has an insulating layer, is produced. On the wafer, first active semiconductor regions having a first thickness are arranged in a layer of active semiconductor material. The second active semiconductor regions having a relatively smaller thickness are produced by epitaxial growth proceeding from at least one seed opening in a trench structure. The second semiconductor regions are substantially completely dielectrically insulated, laterally and vertically, from the first semiconductor regions by oxide layers. The width of the seed opening can be defined by lithography.

Abstract: A semiconductor element such as a DMOS-transistor is fabricated in a semiconductor substrate. Wells of opposite conductivity are formed by implanting and then thermally diffusing respective well dopants into preferably spaced-apart areas in the substrate. At least one trench and active regions are formed in the substrate. The trench may be a shallow drift zone trench of a DMOS-transistor, and/or a deep isolation trench. The thermal diffusion of the well dopants includes at least one first diffusion step during a first high temperature drive before forming the trench, and at least one second diffusion step during a second high temperature drive after forming the trench. Dividing the thermal diffusion steps before and after the trench formation achieves an advantageous balance between reducing or avoiding lateral overlapping diffusion of neighboring wells and reducing or avoiding thermally induced defects along the trench boundaries.

Abstract: In order cost effectively and in spite of the lowest possible expenditure on construction to permit the logical provision of printing plates of different types and sizes for an extremely wide range of printing plate exposers, in an apparatus for loading and/or unloading an exposer, in particular a drum exposer, with printing plates, having a suction means comprising at least one sucker plate and at least two suction heads connected to a vacuum system for picking up printing plates, in particular thermal printing plates, and a pivoting device for pivoting the suction means, it is proposed that the sucker plate be constructed in the form of a cylindrical segment and the suction means be pivotable about an axle which is arranged substantially parallel to the axis of the cylindrical segment.

Abstract: In a new process of making a DMOS transistor, the doping of the sloping side walls can be set independently from the doping of the floor region in a trench structure. Furthermore, different dopings can be established among the side walls. This is achieved especially by a sequence of implantation doping, etching to form the trench, formation of a scattering oxide protective layer on the side walls, and two-stage perpendicular and tilted final implantation doping. For DMOS transistors, this achieves high breakthrough voltages even with low turn-on resistances, and reduces the space requirement, in particular with regard to driver structures.

Abstract: A monolithically integratable semiconductor structure serves for over-voltage protection in an integrated circuit or as a normal diode. The structure includes an insulating layer between a substrate and a semiconductor layer of first conductivity type, and several layers formed in the semiconductor layer. First and second layers of second conductivity type are spaced apart from one another. A third layer of first conductivity type contacts the second layer. A fourth layer of first conductivity type directly contacts and surrounds the second and third layers. A fifth layer of first conductivity type and higher dopant concentration than the semiconductor layer is disposed under the first layer. The first layer surrounds the second, third and fourth layers essentially in a ring-shape. A first electrode contacts the first layer. A second electrode contacts the second and third layers.

Abstract: A DMOS-transistor has a trench bordered by a drift region including two doped wall regions and a doped floor region extending along the walls and the floor of the trench. The laterally extending floor region has a dopant concentration gradient in the lateral direction. For example, the floor region includes at least two differently-doped floor portions successively in the lateral direction. This dopant gradient in the floor region is formed by carrying out at least one dopant implantation from above through the trench using at least one mask to expose a first area while covering a second area of the floor region.

Abstract: To form a semiconductor component having active regions separated from one another by trenches as isolation structures, a method involves forming a shallow trench in a semiconductor body, thereafter forming a deep trench within the shallow trench in the semiconductor body, and thereafter completely driving dopant atoms into the semiconductor body to form a well region doped with the dopant. The dopant may be previously introduced by implantation into a surface layer, and then the dopant is finally completely driven into the well region by thermally supported diffusion after forming the deep trench. The shallow and deep trenches together form a compound trench with stepped side walls. Two oppositely doped wells may be formed on opposite sides of the compound trench, which thus isolates the two wells from one another. Active regions may be formed in the two wells.

Abstract: A retina implant including a chip adapted to be implanted into the interior of eye in subretinal contact with the retina. The chip has a plurality of pixel elements on a side thereof facing the lens for receiving an image projected into the retina and a plurality of electrodes for stimulating retina cells. The implants further includes a receiver coil for inductively coupling thereinto electromagnetic energy. The receiver coil coupled to a means for converting an alternating voltage induced into the receiver coil in a direct voltage suited for supplying the chip. The receiver coil is configured as a component separate from the chip, and for being positioned on the eye ball outside the sclera. The chip is connected to the receiver coil via a connecting lead which, in the implanted condition interconnects the interior and the exterior of the eye ball.

Abstract: In a new process of making a DMOS transistor, the doping of the sloping side walls can be set independently from the doping of the floor region in a trench structure. Furthermore, different dopings can be established among the side walls. This is achieved especially by a sequence of implantation doping, etching to form the trench, formation of a scattering oxide protective layer on the side walls, and two-stage perpendicular and tilted final implantation doping. For DMOS transistors, this achieves high breakthrough voltages even with low turn-on resistances, and reduces the space requirement, in particular with regard to driver structures.

Abstract: A retina implant, comprises a surface and a plurality of pixel elements disposed on the surface for receiving and converting incoming light energy into electric energy. At least one amplifier is provided in the implant, and a plurality of stimulation electrodes supplied via the at least one amplifier as a function of signals received by the pixel elements. At least one light-sensitive reference element is coupled with the at least one amplifier for controlling amplification thereof as a function of light energy impinging on the at least one reference element.

Abstract: In an embodiment of the present invention, an apparatus for steering a vehicle is disclosed. The apparatus includes a back-drivable steer-by-wire system including a road wheel actuator assembly coupled to a wheel of the vehicle. The road wheel actuator assembly defines a steering axis and the steering axis is off-set from a longitudinal axis of the wheel by a positive scrub radius. In an embodiment for a method in accordance with the present invention, a method to steer a vehicle after failure of a road wheel actuator assembly in a back-drivable steer-by-wire steering system is disclosed. The method includes the acts of applying a braking force to the wheel and generating a torque on the road wheel actuator assembly by the applied braking force acting through a positive scrub radius.

Abstract: In a new process of making a DMOS transistor, the doping of the sloping side walls can be set independently from the doping of the floor region in a trench structure. Furthermore, different dopings can be established among the side walls. This is achieved especially by a sequence of implantation doping, etching to form the trench, formation of a scattering oxide protective layer on the side walls, and two-stage perpendicular and tilted final implantation doping. For DMOS transistors, this achieves high breakthrough voltages even with low turn-on resistances, and reduces the space requirement, in particular with regard to driver structures.

Abstract: An operating strategy for the components of the drive train is defined as a function of data which characterizes a route to be traveled along. Depending on the operating strategy and the route data, expected energy consumption and a time period for which the energy can be made available are calculated. If the time period is detected as being sufficient, the drive train is controlled in accordance with the operating strategy. If the calculated time period is detected as not being sufficient, an alternative operating strategy is defined and the resulting time period is checked again.

Abstract: In an embodiment of the present invention, an apparatus for steering a vehicle is disclosed. The apparatus includes a back-drivable steer-by-wire system including a road wheel actuator assembly coupled to a wheel of the vehicle. The road wheel actuator assembly defines a steering axis and the steering axis is off-set from a longitudinal axis of the wheel by a positive scrub radius. In an embodiment for a method in accordance with the present invention, a method to steer a vehicle after failure of a road wheel actuator assembly in a back-drivable steer-by-wire steering system is disclosed. The method includes the acts of applying a braking force to the wheel and generating a torque on the road wheel actuator assembly by the applied braking force acting through a positive scrub radius.

Abstract: In order cost effectively and in spite of the lowest possible expenditure on construction to permit the logical provision of printing plates of different types and sizes for an extremely wide range of printing plate exposers, in an apparatus for loading and/or unloading an exposer, in particular a drum exposer, with printing plates, having a suction means comprising at least one sucker plate and at least two suction heads connected to a vacuum system for picking up printing plates, in particular thermal printing plates, and a pivoting device for pivoting the suction means, it is proposed that the sucker plate be constructed in the form of a cylindrical segment and the suction means be pivotable about an axle which is arranged substantially parallel to the axis of the cylindrical segment.

Abstract: A hardware pay-per-use system and corresponding method allow computer system operators to tailor their hardware utilization to more closely match changing customer demands. The hardware pay-per-use system includes one or more hardware products and a metering mechanism coupled to at least one of the hardware products. The metering mechanism includes a hardware device separate from the hardware products. The metering mechanism acquires metrics data from the hardware products, the metrics data related to an operation at the hardware products. The metering mechanism determines data to report on the operation of the hardware products. A usage repository coupled to the metering mechanism receives the determined data and generates usage reports related to the operation of the hardware products.

Abstract: An operating strategy for the components of the drive train is defined as a function of data which characterizes a route to be traveled along. Depending on the operating strategy and the route data, expected energy consumption and a time period for which the energy can be made available are calculated. If the time period is detected as being sufficient, the drive train is controlled in accordance with the operating strategy. If the calculated time period is detected as not being sufficient, an alternative operating strategy is defined and the resulting time period is checked again.

Abstract: In the processes known so far, for a trench-shaped structure the doping of the side walls is coupled to the doping of the bottom region.