Abstract: The invention provides a method for recovering NBTI/PBTI related parameter degradation in MOSFET devices. The method includes operating the at least one MOSFET device in a standby mode, exiting the at least one MOSFET device from the standby mode, holding the at least one MOSFET device in an active state for a predetermined time span after exiting the standby mode, and operating the at least one MOSFET device in an operational mode after the predetermined time span has elapsed.

Abstract: A system for on-die voltage difference measurement on a pass device comprises a first voltage controlled oscillator circuit having a first voltage control input connectable to a first terminal of the pass device; a second voltage controlled oscillator circuit having a second voltage control input connectable to a second terminal of the pass device; a first counter circuit arranged to count oscillation periods of a first output signal from the first voltage controlled oscillator circuit and to provide a stop signal when a predefined number of the oscillation periods of the first output signal is counted; and a second counter circuit arranged to count oscillation periods of a second output signal from the second voltage controlled oscillator circuit and to stop counting depending on the stop signal.

Abstract: An integrated circuit includes an input/output “I/O” cell arranged to drive an output signal and an activity analysis unit arranged to generate an activity factor based on the output signal. The activity factor represents a switching activity intensity of the I/O cell. The switching activity intensity is associated with an ageing effect of the I/O cell. The circuit further includes a calibration unit arranged to generate a switching pattern signal based on the generated activity factor and an I/O calibration cell arranged to be driven by the switching pattern signal, wherein the switching pattern signal emulates the ageing effect of the I/O cell.

Abstract: An integrated circuit device comprises a signal processing system having at least one first signal processing module fabricated by way of a first production process; and at least one second signal processing module fabricated by way of a second production process, wherein the second production process is different to the first production process. The signal processing system further comprises a signal processing management module arranged to: determine a desired system performance of the integrated circuit device; determine at least one operating condition of the signal processing system; and configure a signal processing operating mode of the signal processing system based at least partly on: the determined desired system performance; the at least one determined operating condition; and at least one of the first production process and the second production process.

Abstract: An input/output (IO) driver circuit is described. The IO buffer driver circuit comprises: at least one input for receiving an input signal and at least one output for providing at least one output signal; and a plurality of switches arranged to provide a variable voltage level between a low voltage value and a high voltage value to the at least one output. The at least one first switch of the plurality of switches is arranged to initiate a voltage change to an intermediate voltage level between the low voltage value and the high voltage value in a first time period. The at least one second switch of the plurality of switches is arranged to continue the voltage change to the low voltage value or the high voltage value in a second time period.

Abstract: A bypass capacitor circuit for an integrated circuit (IC) comprises one or more capacitive devices, each arranged in a segment of a seal ring area of a die, which comprises the IC. A method of providing a bypass capacitance for an IC comprises providing a semiconductor wafer device comprising a plurality of dies, each comprising an IC; arranging one or more capacitive devices in a seal ring area of at least one of the IC; dicing the semiconductor wafer device; in a test mode, for each of the one or more capacitive devices, enabling the capacitive device, determining an operability parameter value indicative of an operability of the capacitive device, and storing the operability parameter in a memory device; and in a normal operation mode, providing a bypass capacitance to the IC depending on a capacitance of one or more of the capacitive devices having an associated operability parameter value indicative of a non-defectiveness of the corresponding capacitive device.

Abstract: An integrated circuit (IC) device is provided that includes at least one internal voltage regulator arranged to receive a voltage supply signal at a first input thereof, receive a control signal at a second input thereof, regulate the received voltage supply signal in accordance with the received control signal, and provide a regulated voltage supply signal at an output thereof. The IC device further includes at least one voltage regulation power control module operably coupled to the second input of the at least one internal voltage regulator and arranged to provide the control signal thereto. The voltage regulation power control module is further arranged to receive at least one IC device conditional indication, and generate the control signal for the at least one internal voltage regulator based at least partly on an available thermal power budget for the IC device corresponding to the at least one IC device conditional indication.

Abstract: An integrated circuit device comprises at least one power gating arrangement, including at least one gated power domain, and at least one power gating component operably coupled between at least one node of the at least one gated power domain and at least a first power supply node. The at least one power gating component is arranged to selectively couple the at least one node of the at least one gated power domain to the at least first power supply node.

Abstract: An integrated circuit device comprising at least one memory module comprising a plurality of memory sub-modules, and at least one power management module arranged to provide power management for the at least one memory module. The at least one power management module is arranged to determine when content of at least one memory sub-module is redundant, and place the at least one memory sub-module into a powered-down state upon determining that content of the at least one memory sub-module is redundant.

Abstract: A voltage regulating circuit is provided for regulating an output voltage in order to minimize an absolute difference between a level of said output voltage and a reference level. The voltage regulating circuit comprises a voltage regulator and a reference level generator. The reference level generator generates an internal reference level on the basis of said output voltage level and said reference level such that said internal reference level does not exceed said output voltage level by more than a maximum allowed increment. The voltage regulator regulates said output voltage in order to minimize an absolute difference between said output voltage level and said internal reference level. A method of regulating an output voltage is also disclosed.

Abstract: An IO driver for an integrated circuit and a method for calibrating such an IO driver are provided. The IO driver comprises a plurality of IO driver cells, a plurality of IO partial driver cells and an external resistor. The IO driver cells control IO operations for a corresponding plurality of data channels of the integrated circuit. The IO partial driver cells are coupled to respective cells of the plurality of IO driver cells. The external resistor provides a reference impedance. The reference partial driver cell is coupled to the external resistor and is arranged to determine the reference impedance and to provide information depending on the reference impedance to the IO partial driver cells. The IO partial driver cells are arranged to calibrate the respective IO driver cells based on the provided information.

Abstract: An apparatus for voltage ripple reduction on a power supply line of an integrated circuit device is provided to be operable in at least two modes. The apparatus includes: one or more clamping devices connectable to the power supply line; a clamp control unit; and a mode change detection unit arranged to monitor an interface of the integrated circuit device for one or more information indicating an upcoming mode change of the integrated circuit device and to provide a mode change signal to the clamp control unit when the one or more information is detected. The clamp control unit is arranged to connect at least one of the one or more clamping devices to the power supply line when receiving the mode change signal.

Abstract: There is provided a method of managing power in a multi-core data processing system having two or more processing cores, comprising determining usage characteristics for the two or more processing cores within the multi-core processing unit, and dependent on the determined usage characteristics, adapting a frequency or voltage supplied to each of the two or more processing cores, and/or adapting enablement signals provided to each of the two or more processing cores. There is also provided an apparatus for carrying out the disclosed method.

Abstract: An electronic circuit includes a processor having a functional mode and a low power mode, said processor comprising state flip-flops and additional flip-flops; said state flip flips are arranged to store state information about a state of the processor when the processor is in the functional mode; said state flip-flops comprise non-reset flip-flops that are arranged to store at least one non-reset value when the processor exits the functional mode; a power management circuit for providing power to the processor when the processor is in the functional mode, and for preventing power from the processor when the processor is in the low power mode; a non-reset value identification module, coupled to the state flip-flops, said non-reset value identification module is arranged to identify the non-reset flip-flops and to generate non-reset information that identifies the non-reset flip-flops; and a recovery circuit, coupled to a memory module and to the state flip-flops.

Abstract: An integrated circuit comprising a power supply node, a ground node and a gated domain coupled between the power node and the ground node. A Charged Device Model electrostatic discharge protection module is provided for shunting electrical energy of a CDM ESD event away from the gated domain. A gating switch makes an electrical connection in a connected state between the gated domain and at least one of the power node and the ground node. ESD gating control circuitry is coupled to the CDM ESD protection module and controls shunting of energy away from the gated domain by the CDM ESD protection module, thereby avoiding the energy flowing through the gated domain. The ESD gating control circuitry inhibits actuation of the CDM ESD protection module to prevent response to CDM ESD events when the gating domain is powered-up.

Abstract: An integrated circuit is provided that includes a plurality of modules comprising at least one clock-gated module and a controller unit, which is arranged to enable and disable provision of a clock signal to the at least one clock-gated module. The at least one clock-gated module includes one or more electronic circuits arranged to be in a first state of an electrical stress condition during a first portion of a period of time and in a second state of less electrical stress than in the first state during a second portion of the period of time. The at least one clock-gated module is further arranged to switch the one or more electronic circuits between the first state and the second state such that a change of a characteristic of at least one of the one or more electronic circuits caused by the electrical stress condition is at least partially reduced.

Abstract: A method and apparatus for calculating delay timing values for at least a part of an integrated circuit design. The method comprises applying a first Negative/Positive Bias Temperature Instability compensation margin to delay values for elements within the at least part of the IC design, identifying at least one lower-rate switching element within the at least part of the IC design, and applying at least one further, increased N/PBTI compensation margin to the delay value(s) for the at least one identified lower-rate switching element.

Abstract: An electronic device includes a set of two or more scan chains and a buffer chain. Each of the scan chains includes a sequence of stateful elements connected in series, and each of the scan chains is arranged to hold a string having a length identical to the length of the (50) respective scan chain. The strings of the scan chains are shifted in parallel from the scan chains into the memory unit and back from the memory unit into the respective scan chains. The store operation and the restore operation each include at least N0 elementary downstream shift operations. The set (100) of scan chains includes a short chain and a detour chain, wherein the short chain (C1) has a length N1 shorter than N0, and the buffer chain. The output end of the short chain is coupled to an input end of the (150) buffer chain. The buffer chain is provided at least partly by the detour chain.

Abstract: There is provided a multimedia computing apparatus for processing and displaying video data with overlay graphic data, said multimedia computing apparatus comprising a compression unit arranged to compress graphic overlay data prior to storage of said compressed overlay graphic data in a compressed display buffer, and a control unit arranged to determine when to compress the overlay graphic data dependent upon a refresh parameter of the overlay graphic data. There is also provided a method of adaptively compressing graphics data in a multimedia computing system comprising dynamically controlling compression of graphic overlay data in a display buffer dependent upon a refresh parameter of the graphic overlay data.

Abstract: The invention provides a method for launch-off-shift at-speed scan testing for at least two scan chains of an integrated circuit comprises iteratively shifting set values for functional elements of a first one of the scan chains clocked with a shift clock, iteratively shifting set values for functional elements of a second one of the scan chains clocked with the shift clock, launching an at-speed scan test clocked with a functional clock for the first one of the scan chains at a last shift cycle of the first one of the scan chains, delaying the last shift cycle for the second one of the scan chains for a predetermined time span, launching an at-speed scan test clocked with a functional clock for the second one of the scan chains at the last shift cycle of the second one of the scan chains, capturing the sample values of the functional elements of the first and second scan chains after the last shift cycle of the scan chains.