Abstract: A plasma treatment chamber comprises one or more sidewalls and a support surface within the sidewalls holds a workpiece. An array of individual gas injectors is distributed about the sidewalls. Pump ports are along the sidewalls to eject gas from the chamber. Aa etch rate uniformity of a material on the workpiece is controlled by: using the array gas injectors to inject one or more gas flows in across the workpiece; injecting a first gas flow from a first set of adjacent individual gas injectors to etch the materials on the workpiece; and simultaneously injecting a second gas flow from remaining gas injectors. The second gas flow either dilutes the first gas flow to reduce an area on the workpiece having a faster etch rate, or acts as an additional etchant to increase the etch rate in the area of the workpiece having the faster etch rate.

Abstract: The disclosure describes devices, systems, and methods for integrating load locks into a factory interface footprint space. A factory interface for an electronic device manufacturing system can include an interior volume defined by a bottom, a top and a plurality of sides, a first load lock disposed within the interior volume of the factory interface, and a first factory interface robot disposed within the interior volume of the factory interface, wherein the first factory interface robot is configured to transfer substrates between a first set of substrate carriers and the first load lock.

Abstract: Methods and apparatus for surface profiling and texturing of chamber components for use in a process chamber, such surface-profiled or textured chamber components, and method of use of same are provided herein. In some embodiments, a method includes measuring a parameter of a reference substrate or a heated pedestal using one or more sensors and modifying a surface of a chamber component physically based on the measured parameter.

Abstract: A gas distribution plate for a showerhead assembly of a processing chamber may include at least a first plate and second plate. The first plate may include a first plurality holes each having a diameter of at least about 100 um. The second plate may include a second plurality of holes each having a diameter of at least about 100 um. Further, each of the first plurality of holes is aligned with a respective one of the second plurality of holes forming a plurality of interconnected holes. Each of the interconnected holes is isolated from each other interconnected holes.

Abstract: Embodiments described herein include processes and apparatuses relate to epitaxial deposition. A method for epitaxially depositing a material is provided and includes positioning a substrate on a substrate support surface of a susceptor within a process volume of a chamber body, where the process volume contains upper and lower chamber regions. The method includes flowing a process gas containing one or more chemical precursors from an upper gas inlet on a first side of the chamber body, across the substrate, and to an upper gas outlet on a second side of the chamber body, flowing a purge gas from a lower gas inlet on the first side of the chamber body, across the lower surface of the susceptor, and to a lower gas outlet on the second side of the chamber body, and maintaining a pressure of the lower chamber region greater than a pressure of the upper chamber region.

Abstract: The present disclosure generally relates to an epitaxial chamber for processing of semiconductor substrates. In one example, the epitaxial chamber has a chamber body assembly. The chamber body assembly includes a lower window and an upper window, wherein chamber body assembly, the lower window and the upper window enclose an internal volume. A susceptor assembly is disposed in the internal volume. The epitaxial chamber also has a plurality of temperature control elements. The plurality of temperature control elements include one or more of an upper lamp module, a lower lamp module, an upper heater, a lower heater, or a heated gas passage.

Abstract: The present disclosure generally relates to gas inject apparatus for a process chamber for processing of semiconductor substrates. The gas inject apparatus include one or more gas injectors which are configured to be coupled to the process chamber. Each of the gas injectors are configured to receive a process gas and distribute the process gas across one or more gas outlets. The gas injectors include a plurality of pathways, a fin array, and a baffle array. The gas injectors are individually heated. A gas mixture assembly is also utilized to control the concentration of process gases flown into a process volume from each of the gas injectors. The gas mixture assembly enables the concentration as well as the flow rate of the process gases to be controlled.

Abstract: The present disclosure generally relates to a process chamber for processing of semiconductor substrates. The process chamber includes an upper lamp assembly, a lower lamp assembly, a substrate support, an upper window disposed between the substrate support and the upper lamp assembly, a lower window disposed between the lower lamp assembly and the substrate support, an inject ring, and a base ring. Each of the upper lamp assembly and the lower lamp assembly include vertically oriented lamp apertures for the placement of heating lamps therein. The inject ring includes gas injectors disposed therethrough and the base ring includes a substrate transfer passage, a lower chamber exhaust passage, and one or more upper chamber exhaust passages. The gas injectors are disposed over the substrate transfer passage and across from the lower chamber exhaust passage and the one or more upper chamber exhaust passages.

Abstract: Apparatuses including a height-adjustable edge ring, and methods for use thereof are described herein. In one example, a process kit for processing a substrate is provided. The process kit has a support ring comprising an upper surface having an inner edge disposed at a first height and an outward edge disposed at a second height less than the first height, the inner edge having a greater thickness than the outward edge. An edge ring is disposed on the support ring, an inner surface of the edge ring interfaced with the inner edge of the support ring. A cover ring is disposed outward of the edge ring, the edge ring independently moveable relative to the support ring and the cover ring. Push pins are disposed inward of the cover ring, the push pins operable to elevate the edge ring while constraining radial movement of the support ring.

Abstract: The disclosure describes devices, systems, and methods for causing a factory interface of an electronic device manufacturing system to be moveable between a first position and a second position. An electronic device manufacturing system can include a transfer chamber, processing chambers connected to the transfer chamber, a load lock connected to the transfer chamber, and a factory interface connected to the load lock. The factory interface can be moveable between a first position and a second position. The factory interface, while oriented in the first position, is positioned for transfer of one or more substrates between the factory interface and the load lock, where at least one of the transfer chamber or the load lock are inaccessible for maintenance while the factory interface is oriented at the first position. The factory interface, while oriented in the second position, is positioned to provide maintenance access to at least one of the transfer chamber or the load lock.

Abstract: Embodiments of substrates supports for use in process chambers are provided herein. In some embodiments, a substrate support includes: a dielectric plate having a first side configured to support a substrate having a given diameter and including an annular groove disposed in the first side, wherein the annular groove has an inner diameter that is less than the given diameter and an outer diameter that is greater than the given diameter, wherein the dielectric plate includes a chucking electrode; an insert ring disposed in the annular groove of the dielectric plate; and an edge ring disposed on the dielectric plate, wherein the edge ring has an inner diameter that is greater than the given diameter and less than the outer diameter of the annular groove such that the edge ring is disposed over a portion of the insert ring.

Abstract: A plasma reactor includes a chamber body having an interior space that provides a plasma chamber and having a ceiling, a gas distributor to deliver a processing gas to the plasma chamber, a pump coupled to the plasma chamber to evacuate the chamber, a workpiece support to hold a workpiece, and an intra-chamber electrode assembly. The intra-chamber electrode assembly includes an insulating frame, a first plurality of coplanar filaments that extend laterally through the plasma chamber between the ceiling and the workpiece support along a first direction, and a second plurality of coplanar filaments that extend in parallel through the plasma chamber along a second direction perpendicular to the first direction. Each filament of the first and second plurality of filaments includes a conductor at least partially surrounded by an insulating shell. A first RF power source supplies a first RF power to the conductor of the intra-chamber electrode assembly.

Abstract: Apparatuses including a height-adjustable edge ring, and methods for use thereof are described herein. In one example, a substrate support assembly includes a height-adjustable edge ring, and the substrate support assembly is located within a process chamber. The substrate support assembly includes an electrostatic chuck, an edge ring positioned on a portion of the electrostatic chuck, and one or more actuators to adjust the height of the edge ring via one or more push pins. The height-adjustable edge ring can be used to compensate for erosion of the edge ring over time. In addition, the height-adjustable edge ring can be removed from the process chamber via a slit valve opening without venting and opening the process chamber. The height-adjustable edge ring can be tilted by the one or more actuators in order to improve azimuthal uniformity at the edge of the substrate.

Abstract: A processing tool for a plasma process includes a chamber body that has an interior space that provides a plasma chamber and that has a ceiling and an opening on a side opposite the ceiling, a workpiece support to hold a workpiece such that at least a portion of a front surface of the workpiece faces the opening, an actuator to generate relative motion between the chamber body and the workpiece support such that the opening moves laterally across the workpiece, a gas distributor to deliver a processing gas to the plasma chamber, an electrode assembly comprising a plurality of coplanar filaments extending laterally through the plasma chamber between the workpiece support and the ceiling, each of the plurality of filaments including a conductor, and a first RF power source to supply a first RF power to the conductors of the electrode assembly to form a plasma.

Abstract: A gas distribution plate for a showerhead assembly of a processing chamber may include at least a first plate and second plate. The first plate may include a first plurality holes each having a diameter of at least about 100 um. The second plate may include a second plurality of holes each having a diameter of at least about 100 um. Further, each of the first plurality of holes is aligned with a respective one of the second plurality of holes forming a plurality of interconnected holes. Each of the interconnected holes is isolated from each other interconnected holes.

Abstract: A system includes a filter purge apparatus configured to supply a flushing gas to a portion of a factory interface chamber located upstream of a chamber filter to minimize moisture contamination of the chamber filter by ambient air. The filter purge apparatus is configured to supply the flushing gas in association with breach of the factory interface chamber which compromises controlled environment of the factory interface chamber.

Abstract: Certain embodiments of the present disclosure relate to methods of forming coated articles. In one embodiment, a method comprises depositing one or more rare earth metal-containing ceramic compounds on an article by atomic layer deposition, for example, to coat surfaces of high aspect ratio internal channels.

Abstract: Embodiments disclosed herein include a plasma treatment chamber, comprising one or more sidewalls. A support surface within the one or more sidewalls holds a workpiece. A first gas injector along the one or more sidewalls injects a first gas flow in a first direction generally parallel to and across a surface of the workpiece. A first pump port along the one or more sidewalls generally opposite of the first gas injector pumps out the first gas flow. A second gas injector along the one or more sidewalls injects a second gas flow in a second direction generally parallel to and across the surface of the workpiece. A second pump port along the one or more sidewalls generally opposite of the second gas injector pumps out the second gas flow. The first and second gas flows comprise a process gas mixture and/or an independent gas injection (IGI) mixture.