Abstract: A method of fabricating a metallization layer of a semiconductor device in which copper is used for an interconnect material and cobalt is used to encapsulate the copper. A material is introduced that will interact with the cobalt to cause a hexagonal-close-packed (HCP) crystal structure of cobalt to change to a face-centered-cubic (FCC) crystal structure of cobalt, the FCC crystal structure providing a resistance of the cobalt to migrate.

Abstract: Embodiments of the invention are directed to a semiconductor wafer test system. A non-limiting example of the test system includes a controller, a sensing system communicatively coupled to the controller, and a stress source communicatively coupled to the controller. The controller is configured to control the stress source to deliver an applied stress to a targeted stress area of a semiconductor wafer. The sensing system is configured to detect the applied stress and provide data of the applied stress to the controller. The controller is further configured to control the stress source based at least in part on the data of the applied stress.

Abstract: Embodiments of the invention are directed to a semiconductor wafer test system. A non-limiting example of the test system includes a controller, a sensing system communicatively coupled to the controller, and a stress source communicatively coupled to the controller. The controller is configured to control the stress source to deliver an applied stress to a targeted stress area of a semiconductor wafer. The sensing system is configured to detect the applied stress and provide data of the applied stress to the controller. The controller is further configured to control the stress source based at least in part on the data of the applied stress.

Abstract: A computer implemented method and system for identifying advertisements targeted to individuals based on analysis of audio recordings. The method includes recording audio input from at least one media transmission, analyzing the recorded media audio to identify content of the at least one media transmission, recording audio input from at least one individual, analyzing the recorded individual audio to classify the at least one individual into at least one segment, analyzing the recorded individual audio to identify at least one sentiment related to the identified media content, analyzing the at least one sentiment in context with the identified media content and identifying at least one advertisement targeted to the at least one segment based on the contextual analysis.

Abstract: A computer implemented method and system for identifying advertisements targeted to individuals based on analysis of audio recordings. The method includes recording audio input from at least one media transmission, analyzing the recorded media audio to identify content of the at least one media transmission, recording audio input from at least one individual, analyzing the recorded individual audio to classify the at least one individual into at least one segment, analyzing the recorded individual audio to identify at least one sentiment related to the identified media content, analyzing the at least one sentiment in context with the identified media content and identifying at least one advertisement targeted to the at least one segment based on the contextual analysis.

Abstract: A method of forming a semiconductor device, includes forming a conductive layer in a recessed portion of a porous dielectric layer, partially removing a top portion of the conductive layer while maintaining a height of the porous dielectric layer, forming a conformal cap layer on the porous dielectric layer and the conductive layer in the recessed portion, polishing the conformal cap layer to form a gap in the conformal cap layer, such that an upper surface of the porous dielectric layer is exposed through the gap and an upper surface of the conductive layer is protected by the cap layer, and performing a heat treatment to burn out a pore filler of the porous dielectric layer through the exposed upper surface of the porous dielectric layer.

Abstract: Embodiments are directed to a support apparatus. The support apparatus might comprise a body configured to support an entity. The body might comprise a material that has a physical property. The support apparatus might further comprise a coupler system configured to couple electric current from a power source to the material. The material is arranged such that coupling an electric current to the material changes the physical property of the material. Embodiments are further directed to a method. The method might comprise forming one or more cavities in a support apparatus. The method might further comprise providing one or more couplers in electrical contact with each of the one or more channels. The method further comprises filling each of the one or more cavities with a fluid that has electrically changeable rigidity. Finally, the method might comprise connecting a power source to each of the one or more couplers.

Abstract: A substantially flat bottom electrode for magnetoresistive random access memory (MRAM) devices includes three components: a recessed bulk conductive material such as copper, a conductive liner lining the recess, and a cap layer, wherein the conductive liner is a harder material than the cap layer. The cap layer and the dielectric layer are coplanar having a height differential of less than 3 nanometers. The conductive liner has a lower chemical mechanical planarization removal rate. Also provided are processes for forming the bottom electrode.

Abstract: A substantially flat bottom electrode for magnetoresistive random access memory (MRAM) devices includes three components: a recessed bulk conductive material such as copper, a conductive liner lining the recess, and a cap layer, wherein the conductive liner is a harder material than the cap layer. The cap layer and the dielectric layer are coplanar having a height differential of less than 3 nanometers. The conductive liner has a lower chemical mechanical planarization removal rate. Also provided are processes for forming the bottom electrode.

Abstract: Methods are provided for fabricating metallic interconnect structures having reduced electrical resistivity that is obtained by applying mechanical strain to the metallic interconnect structures, as well as semiconductor structures having metallic interconnect structures formed with permanent mechanical strain to provide reduced electrical resistivity. For example, a method includes forming a metallic interconnect structure in an interlevel dielectric (ILD) layer of a back-end-of-line (BEOL) structure of a semiconductor structure, and forming a stress layer in contact with the metallic interconnect structure. A thermal anneal process is performed to cause the stress layer to expand and apply compressive strain to the metallic interconnect structure and permanently deform at least a portion of the metallic interconnect structure into a stress memorized state of compressive strain.

Abstract: A method of forming a skip-via, including, forming a first dielectric layer on a first metallization layer, forming a second metallization layer on the first dielectric layer and a second dielectric layer on the second metallization layer, removing a section of the second dielectric layer to form a via to the second metallization layer, removing a portion of the second metallization layer to form an aperture, and removing an additional portion of the second metallization layer to form an exclusion zone.

Abstract: Techniques for preventing switching of spins in a magnetic tunnel junction by stray magnetic fields using a thin film magnetic shield are provided. In one aspect, a method of forming a magnetic tunnel junction includes: forming a stack on a substrate, having a first magnetic layer, a tunnel barrier, and a second magnetic layer; etching the stack to partially pattern the magnetic tunnel junction in the stack, wherein the etching includes patterning the magnetic tunnel junction through the second magnetic layer, the tunnel barrier, and partway through the first magnetic layer; depositing a first spacer and a magnetic shield film onto the partially patterned magnetic tunnel junction; etching back the magnetic shield film and first spacer; complete etching of the magnetic tunnel junction through the first magnetic layer to form a fully patterned magnetic tunnel junction; and depositing a second spacer onto the fully patterned magnetic tunnel junction.

Abstract: A substantially flat bottom electrode for magnetoresistive random access memory (MRAM) devices includes three components: a recessed bulk conductive material such as copper, a conductive liner lining the recess, and a cap layer, wherein the conductive liner is a harder material than the cap layer. The cap layer and the dielectric layer are coplanar having a height differential of less than 3 nanometers. The conductive liner has a lower chemical mechanical planarization removal rate. Also provided are processes for forming the bottom electrode.

Abstract: A method of forming a self-aligned pattern of vias in a semiconductor device comprises etching a pattern of lines that contain notches that are narrower than other parts of the line. Thereafter, vias are created where the notches are located. The locations of the vias are such that the effect of blown-out areas is minimized. Thereafter, the lines are etched and the vias and line areas are filled. The layers are planarized such that the metal fill is level with a surrounding ultra-low-k dielectric. Additional metal layers, lines, and vias can be created. Other embodiments are also described herein.

Abstract: Embodiments of the invention are directed to computer-implemented methods, computer systems, and computer program products for customizing a virtual reality avatar. The method includes receiving inputs from an electromyography sensor. The inputs from the electromyography sensor include inputs derived from the activity or inactivity of facial muscles. In some embodiments, the electromyography sensor is integrated into a head mounted display to be in contact with a user's facial muscles. The inputs from the electromyography sensor are translated into data that represents sensed facial expressions. The facial features of the user's virtual reality avatar are modified based at least in part on the data that represents sensed facial expressions.

Abstract: Tooling apparatus and methods are provided to fabricate semiconductor devices in which controlled thermal annealing techniques are utilized to modulate microstructures of metallic interconnect structures. For example, an apparatus includes a single platform semiconductor processing chamber having first and second sub-chambers. The first sub-chamber is configured to receive a semiconductor substrate comprising a metallization layer formed on a dielectric layer, wherein a portion of the metallization layer is disposed within an opening etched in the dielectric layer, and to form a stress control layer on the metallization layer. The second sub-chamber comprises a programmable hot plate which is configured to perform a thermal anneal process to modulate a microstructure of the metallization layer while the stress control layer is disposed on the metallization layer, and without an air break between the process modules of forming the stress control layer and performing the thermal anneal process.

Abstract: A binaural audio calibration method, system, and computer program product for using behavioral data and sensor data to calibrate binaural audio to a specific user and creating a personalized binaural audio which can lead to greater immersion and allow user attention to be more effectively controlled.

Abstract: A method is presented for forming a semiconductor structure. The method includes depositing an insulating layer over a semiconductor substrate, etching the insulating layer to form trenches for receiving a metal, depositing one or more sacrificial layers, and etching portions of the one or more sacrificial layers to expose a top surface of the metal of one or more of the trenches. The method further includes selectively depositing an electrode over the top surface of the exposed metal and nitridizing the electrode to form a diffusion barrier between chip components and the metal.

Abstract: A method is presented for forming a semiconductor structure. The method includes depositing an insulating layer over a semiconductor substrate, etching the insulating layer to form trenches for receiving a metal, depositing one or more sacrificial layers, and etching portions of the one or more sacrificial layers to expose a top surface of the metal of one or more of the trenches. The method further includes selectively depositing an electrode over the top surface of the exposed metal and nitridizing the electrode to form a diffusion barrier between chip components and the metal.

Abstract: Techniques are provided for alerting drivers of hazardous driving conditions using the sensing capabilities of wearable mobile technology. In one aspect, a method for alerting drivers of hazardous driving conditions includes the steps of: collecting real-time data from a driver of a vehicle, wherein the data is collected via a mobile device worn by the driver; determining whether the real-time data indicates that a hazardous driving condition exists; providing feedback to the driver if the real-time data indicates that a hazardous driving condition exists, and continuing to collect data from the driver in real-time if the real-time data indicates that a hazardous driving condition does not exist. The real-time data may also be collected and used to learn characteristics of the driver. These characteristics can be compared with the data being collected to help determine, in real-time, whether the driving behavior is normal and whether a hazardous driving condition exists.