Patents by Inventor Michael Shur

Michael Shur has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Light emitting device substrate with inclined sidewalls
    Patent number: 10096742
    Abstract: A light emitting device having improved light extraction is provided. The light emitting device can be formed by epitaxially growing a light emitting structure on a surface of a substrate. The substrate can be scribed to form a set of angled side surfaces on the substrate. For each angled side surface in the set of angled side surfaces, a surface tangent vector to at least a portion of each angled side surface in the set of angled side surfaces forms an angle between approximately ten and approximately eighty degrees with a negative of a normal vector of the surface of the substrate. The substrate can be cleaned to clean debris from the angled side surfaces.
    Type: Grant
    Filed: December 30, 2015
    Date of Patent: October 9, 2018
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Maxim S. Shatalov, Jianyu Deng, Alexander Dobrinsky, Xuhong Hu, Remigijus Gaska, Michael Shur
  • Ultraviolet transparent enclosure
    Patent number: 10093558
    Abstract: A solution for disinfecting a fluid, colloid, mixture, and/or the like using ultraviolet radiation is provided. An ultraviolet transparent enclosure can include an inlet and an outlet for a flow of media to be disinfected. The ultraviolet transparent enclosure includes a material that is configured to prevent biofouling within the ultraviolet transparent enclosure. A set of ultraviolet radiation sources are located adjacent to the ultraviolet transparent enclosure and are configured to generate ultraviolet radiation towards the ultraviolet transparent enclosure.
    Type: Grant
    Filed: July 28, 2017
    Date of Patent: October 9, 2018
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Saulius Smetona, Timothy James Bettles, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Device Treatment
    Publication number: 20180280555
    Abstract: An ultraviolet illuminator for providing a cleaning treatment to a medical device is disclosed. The ultraviolet illuminator can include an ultraviolet cleaning treatment system that operates in conjunction with at least one ultraviolet radiation source and sensor to clean surfaces of a medical device for purposes of disinfection, sterilization, and/or sanitization. The ultraviolet illuminator is suitable for a wide variety of medical devices, instruments and equipment. Stethoscopes and medical instrument probes are illustrative examples of some devices that can be used with the ultraviolet illuminator.
    Type: Application
    Filed: June 4, 2018
    Publication date: October 4, 2018
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Yuri Bilenko, Timothy James Bettles, Alexander Dobrinsky, Michael Shur
  • Material growth with temperature controlled layer
    Patent number: 10090210
    Abstract: A metal-organic chemical vapor deposition (MOCVD) growth with temperature controlled layer is described. A substrate or susceptor can have a temperature controlled layer formed thereon to adjust the temperature uniformity of a MOCVD growth process used to epitaxially grow semiconductor layers. In one embodiment, the substrate and/or the susceptor can be profiled with a shape that improves temperature uniformity during the MOCVD growth process. The profiled shape can be formed with material that provides a desired temperature distribution to the substrate that is in accordance with a predetermined temperature profile for the substrate for a particular MOCVD process.
    Type: Grant
    Filed: October 3, 2016
    Date of Patent: October 2, 2018
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Maxim S. Shatalov, Mikhail Gaevski, Igor Agafonov, Robert M. Kennedy, Alexander Dobrinsky, Michael Shur, Emmanuel Lakios
  • Opto-electronic device with two-dimensional injection layers
    Patent number: 10090438
    Abstract: An opto-electronic device with two-dimensional injection layers is described. The device can include a semiconductor structure with a semiconductor layer having one of an n-type semiconductor layer or a p-type semiconductor layer, and a light generating structure formed on the semiconductor layer. A set of tilted semiconductor heterostructures is formed over the semiconductor structure. Each tilted semiconductor heterostructure includes a core region, a set of shell regions adjoining a sidewall of the core region, and a pair of two-dimensional carrier accumulation (2DCA) layers. Each 2DCA layer is formed at a heterointerface between one of the sidewalls of the core region and one of the shell regions. The sidewalls of the core region, the shell regions, and the 2DCA layers each having a sloping surface, wherein each 2DCA layer forms an angle with a surface of the semiconductor structure.
    Type: Grant
    Filed: August 16, 2017
    Date of Patent: October 2, 2018
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Grigory Simin, Michael Shur, Alexander Dobrinsky
  • Semiconductor heterostructure polarization doping
    Patent number: 10090433
    Abstract: A semiconductor heterostructure including a polarization doped region is described. The region can correspond to an active region of a device, such as an optoelectronic device. The region includes an n-type semiconductor side and a p-type semiconductor side and can include one or more quantum wells located there between. The n-type and/or p-type semiconductor side can be formed of a group III nitride including aluminum and indium, where a first molar fraction of aluminum nitride and a first molar fraction of indium nitride increase (for the n-type side) or decrease (for the p-type side) along a growth direction to create the n- and/or p-polarizations.
    Type: Grant
    Filed: December 1, 2017
    Date of Patent: October 2, 2018
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Alexander Dobrinsky, Michael Shur
  • Ultraviolet Gradient Sterilization, Disinfection, and Storage System
    Publication number: 20180272018
    Abstract: Ultraviolet radiation is directed within an area. The storage area is scanned and monitored for the presence of biological activity within designated zones. Once biological activity is identified, ultraviolet radiation is directed to sterilize and disinfect designated zones within the storage area.
    Type: Application
    Filed: May 25, 2018
    Publication date: September 27, 2018
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Maxim S. Shatalov, Timothy James Bettles, Yuri Bilenko, Saulius Smetona, Alexander Dobrinsky, Remigijus Gaska
  • Storage Device Including Ultraviolet Illumination
    Publication number: 20180264150
    Abstract: Ultraviolet radiation is directed within an area. Items located within the area and/or one or more conditions of the area are monitored over a period of time. Based on the monitoring, ultraviolet radiation sources are controlled by adjusting a direction, an intensity, a pattern, and/or a spectral power of the ultraviolet radiation generated by the ultraviolet radiation source. Adjustments to the ultraviolet radiation source(s) can correspond to one of a plurality of selectable operating configurations including a storage life preservation operating configuration, a disinfection operating configuration, and an ethylene decomposition operating configuration.
    Type: Application
    Filed: May 17, 2018
    Publication date: September 20, 2018
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Maxim S. Shatalov, Timothy James Bettles, Yuri Bilenko, Saulius Smetona, Alexander Dobrinsky, Remigijus Gaska, Igor Agafonov
  • Patterned Layer Design for Group III Nitride Layer Growth
    Publication number: 20180269355
    Abstract: A method of fabricating a device using a layer with a patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers with a high concentration of aluminum, is provided. The patterned surface can include a substantially flat top surface and a plurality of stress reducing regions, such as openings. The substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the stress reducing regions can have a characteristic size between approximately 0.1 microns and approximately five microns and a depth of at least 0.2 microns. A layer of group-III nitride material can be grown on the first layer and have a thickness at least twice the characteristic size of the stress reducing regions. A device including one or more of these features also is provided.
    Type: Application
    Filed: May 25, 2018
    Publication date: September 20, 2018
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Rakesh Jain, Wenhong Sun, Jinwei Yang, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Ultraviolet Absorbent Enclosure
    Publication number: 20180264154
    Abstract: A solution for disinfecting electronic devices is provided. An ultraviolet radiation source is embedded within an ultraviolet absorbent case. While the electronic device is within the ultraviolet absorbent case, ultraviolent radiation is directed at the electronic device. A monitoring and control system monitors a plurality of attributes for the electronic device, which can include: a frequency of usage for the device, a biological activity at a surface of the device, and a disinfection schedule history for the device. Furthermore, the monitoring and control system can detect whether the device is being used. Based on the monitoring, the monitoring and control system controls the ultraviolet radiation directed at the electronic device.
    Type: Application
    Filed: May 22, 2018
    Publication date: September 20, 2018
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Timothy James Bettles, Yuri Bilenko, Saulius Smetona, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Storage Device Including Target UV Illumination Ranges
    Publication number: 20180264151
    Abstract: Ultraviolet radiation is directed within an area at target wavelengths, target intensities, a target temporal distribution, and/or a target spatial distribution. The target attribute(s) of the ultraviolet radiation can correspond to at least one of a plurality of selectable operating configurations including a storage life preservation operating configuration, a disinfection operating configuration, an ethylene decomposition operating configuration, and/or the like.
    Type: Application
    Filed: May 17, 2018
    Publication date: September 20, 2018
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Maxim S. Shatalov, Timothy James Bettles, Yuri Bilenko, Saulius Smetona, Alexander Dobrinsky, Remigijus Gaska
  • Optoelectronic device with modulation doping
    Patent number: 10069034
    Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The p-type contact layer and electron blocking layer can be doped with a p-type dopant. The dopant concentration for the electron blocking layer can be at most ten percent the dopant concentration of the p-type contact layer. A method of designing such a heterostructure is also described.
    Type: Grant
    Filed: May 8, 2017
    Date of Patent: September 4, 2018
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Rakesh Jain, Maxim S. Shatalov, Jinwei Yang, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Light Emitting Heterostructure with Partially Relaxed Semiconductor Layer
    Publication number: 20180248072
    Abstract: A light emitting heterostructure including a partially relaxed semiconductor layer is provided. The partially relaxed semiconductor layer can be included as a sublayer of a contact semiconductor layer of the light emitting heterostructure. A dislocation blocking structure also can be included adjacent to the partially relaxed semiconductor layer.
    Type: Application
    Filed: April 25, 2018
    Publication date: August 30, 2018
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Optoelectronic Device with Modulation Doping
    Publication number: 20180248071
    Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The p-type contact layer and electron blocking layer can be doped with a p-type dopant. The dopant concentration for the electron blocking layer can be at most ten percent the dopant concentration of the p-type contact layer. A method of designing such a heterostructure is also described.
    Type: Application
    Filed: April 30, 2018
    Publication date: August 30, 2018
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Rakesh Jain, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur
  • Storage Device Including Ultraviolet Illumination
    Publication number: 20180243458
    Abstract: Ultraviolet radiation is directed within an area. Items located within the area and/or one or more conditions of the area are monitored over a period of time. Based on the monitoring, ultraviolet radiation sources are controlled by adjusting a direction, an intensity, a pattern, and/or a spectral power of the ultraviolet radiation generated by the ultraviolet radiation source. Adjustments to the ultraviolet radiation source(s) can correspond to one of a plurality of selectable operating configurations including a storage life preservation operating configuration, a disinfection operating configuration, and an ethylene decomposition operating configuration.
    Type: Application
    Filed: April 25, 2018
    Publication date: August 30, 2018
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Maxim S. Shatalov, Timothy James Bettles, Alexander Dobrinsky, Remigijus Gaska, Michael Shur, Robert M. Kennedy, Arthur Peter Barber, III, Carlton Gibson
  • Terahertz Plasmonics for Testing Very Large-Scale Integrated Circuits under Bias
    Publication number: 20180238961
    Abstract: Various embodiments are described that relate to failure determination for an integrated circuit. An integrated circuit can be tested to determine if the integrated circuit is functioning properly. The integrated circuit can be subjected to a specific radiation such that the integrated circuit produces a response. This response can be compared against an expected response to determine if the response matches the expected response. If the response does not match the expected response, then the integrated circuit fails the test. If the response matches the expected response, then the integrated circuit passes the test.
    Type: Application
    Filed: February 21, 2017
    Publication date: August 23, 2018
    Inventors: Greg Rupper, John Suarez, Sergey Rudin, Meredith Reed, Michael Shur
  • Substrate structure removal
    Patent number: 10050172
    Abstract: Fabrication of a heterostructure, such as a group III nitride heterostructure, for use in an optoelectronic device is described. The heterostructure can be epitaxially grown on a sacrificial layer, which is located on a substrate structure. The sacrificial layer can be at least partially decomposed using a laser. The substrate structure can be completely removed from the heterostructure or remain attached thereto. One or more additional solutions for detaching the substrate structure from the heterostructure can be utilized. The heterostructure can undergo additional processing to form the optoelectronic device.
    Type: Grant
    Filed: July 1, 2016
    Date of Patent: August 14, 2018
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Alexander Dobrinsky, Maxim S. Shatalov
  • Patterned layer design for group III nitride layer growth
    Patent number: 10050175
    Abstract: A device having a layer with a patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers with a high concentration of aluminum, is provided. The patterned surface can include a substantially flat top surface and a plurality of stress reducing regions, such as openings. The substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the stress reducing regions can have a characteristic size between approximately 0.1 microns and approximately five microns and a depth of at least 0.2 microns. A layer of group-III nitride material can be grown on the first layer and have a thickness at least twice the characteristic size of the stress reducing regions.
    Type: Grant
    Filed: October 30, 2017
    Date of Patent: August 14, 2018
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Rakesh Jain, Wenhong Sun, Jinwei Yang, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Device with transparent and higher conductive regions in lateral cross section of semiconductor layer
    Patent number: 10050174
    Abstract: A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range.
    Type: Grant
    Filed: March 13, 2017
    Date of Patent: August 14, 2018
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Maxim S. Shatalov, Alexander Dobrinsky, Remigijus Gaska, Jinwei Yang
  • Device with Transparent and Higher Conductive Regions in Lateral Cross Section of Semiconductor Layer
    Publication number: 20180226538
    Abstract: A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range.
    Type: Application
    Filed: March 30, 2018
    Publication date: August 9, 2018
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Maxim S. Shatalov, Alexander Dobrinsky