Abstract: A method for transferring a superficial layer from a detachable structure comprises the following steps: a) supplying the detachable structure comprising: •a support substrate, •a detachable layer arranged on the support substrate along a main plane and comprising a plurality of walls that are separated from one another, each wall having at least one side that is perpendicular to the main plane; •a superficial layer arranged on the detachable layer along the main plane; b) applying a mechanical force configured to cause said walls to bend, along a direction that is secant to said side, until causing the mechanical rupture of the walls, in order to detach the superficial layer from the support substrate.

Abstract: A method for transferring a superficial layer from a detachable structure comprises the following steps: a) supplying the detachable structure comprising: •a support substrate, •a detachable layer arranged on the support substrate along a main plane and comprising a plurality of walls that are separated from one another, each wall having at least one side that is perpendicular to the main plane; •a superficial layer arranged on the detachable layer along the main plane; b) applying a mechanical force configured to cause said walls to bend, along a direction that is secant to said side, until causing the mechanical rupture of the walls, in order to detach the superficial layer from the support substrate.

Abstract: A movement assistance device comprising a first element for rigidly connecting the device to one foot of a user and transmitting a thrust force to said foot; and a second element linked to the first element by link means and intended to be in contact with the ground; the device further comprises means for transmitting a force from an exogenous energy source, to the first element and/or to the second element, in order to separate them from each other.

Abstract: A movement assistance device comprising a first element for rigidly connecting the device to one foot of a user and transmitting a thrust force to said foot; and a second element linked to the first element by link means and intended to be in contact with the ground; the device further comprises means for transmitting a force from an exogenous energy source, to the first element and/or to the second element, in order to separate them from each other.

Abstract: A substrate is treated by means of at least one pulse of a luminous flux of determined wavelength. The substrate comprises an embedded layer that absorbs the luminous flux independently of the temperature. The embedded layer is interleaved between a first treatment layer and a second treatment layer. The first treatment layer has a coefficient of absorption of luminous flux that is low at ambient temperature and rises as the temperature rises. The luminous flux may be applied in several places of a surface of the first layer to heat regions of the embedded layer and generate a propagating thermal front in the first layer opposite the heated regions of the embedded layer, which generate constraints within the second layer.

Abstract: The invention concerns a method for fabricating a substrate in semiconductor material characterized in that it comprises the steps of: starting from a donor substrate in a first semiconductor material at an initial temperature, contacting a surface of the donor substrate with a bath of a second semiconductor material held in the liquid state at a temperature higher than the initial temperature, the second semiconductor material being chosen so that its melting point is equal to or lower than the melting point of the first semiconductor material, solidifying the bath material on the surface to thicken the donor substrate with a solidified layer. The invention also concerns a device for implementing the method.

Abstract: This transfer process comprises the following steps: (a) providing a donor substrate and a support substrate; (b) forming an embrittlement region in the donor substrate; (c) forming what is called a bonding layer between the first part of the donor substrate and the support substrate; and (d) assembling the donor substrate to the support substrate, and is noteworthy in that it comprises the following step: (e) exposing, in succession, portions of the embrittlement region to electromagnetic irradiations for an exposure time at a given power density, the exposure time being chosen depending on the thickness of the bonding layer so that the support substrate is thermally decoupled from the first part of the donor substrate, the exposure time being chosen depending on the power density in order to activate kinetics that weaken the embrittlement region.

Abstract: A substrate is treated by means of at least one pulse of a luminous flux of determined wavelength. The substrate comprises an embedded layer that absorbs the luminous flux independently of the temperature. The embedded layer is interleaved between a first treatment layer and a second treatment layer. The first treatment layer has a coefficient of absorption of luminous flux that is low at ambient temperature and rises as the temperature rises. The luminous flux may be applied in several places of a surface of the first layer to heat regions of the embedded layer and generate a propagating thermal front in the first layer opposite the heated regions of the embedded layer, which generate constraints within the second layer.

Abstract: The invention relates to a method and to a device for at least locally heating a plate including at least one layer (2) to be at least locally heated by at least one main, light flow pulse, and including at least one priming region (4) located deeply relative to the front surface of said layer to be heated, wherein the main flow (7) is capable of heating said layer to be heated (2) while the temperature of the latter is within a high temperature range (PHT), and a priming a secondary heating means (9) capable of heating said priming region from a temperature within a low temperature range (PBT) up to a temperature within said high temperature range (PHT).

Abstract: A substrate is treated by means of at least one pulse of a luminous flux of determined wavelength. The substrate comprises an embedded layer that absorbs the luminous flux independently of the temperature. The embedded layer is interleaved between a first treatment layer and a second treatment layer. The first treatment layer has a coefficient of absorption of luminous flux that is low at ambient temperature and rises as the temperature rises. The luminous flux may be applied in several places of a surface of the first layer to heat regions of the embedded layer and generate a propagating thermal front in the first layer opposite the heated regions of the embedded layer, which generate constraints within the second layer.

Abstract: This transfer process comprises the following steps: (a) providing a donor substrate and a support substrate; (b) forming an embrittlement region in the donor substrate; (c) forming what is called a bonding layer between the first part of the donor substrate and the support substrate; and assembling the donor substrate to the support substrate, and is noteworthy in that it comprises the following step: (e) exposing, in succession, portions of the embrittlement region to electromagnetic irradiations for an exposure time at a given power density, the exposure time being chosen depending on the thickness of the bonding layer so that the support substrate is thermally decoupled from the first part of the donor substrate, the exposure time being chosen depending on the power density in order to activate kinetics that weaken the embrittlement region.

Abstract: The present disclosure provides methods for treating a part made from a decomposable semiconductor material, and particularly, methods for detaching a surface film from the rest of such part. According to the provided methods, a burst or pulse of light particles of short duration and very high intensity is applied to the part in order to selectively heat, under substantially adiabatic conditions, an area of the part located at a predefined depth from the surface to a temperature higher than the decomposition temperature of the material, and subsequently a surface film is detached from the rest of the part at the heated area. In preferred embodiments, the decomposable semiconductor material comprises Ga, or comprises AlxGayIn1-x-yN, where 0?x?1, 0?y?1 and x+y?1.

Abstract: A method for preparing a substrate for detaching a layer by irradiation of the substrate with a light flux for heating a buried region of the substrate and bringing about decomposition of the material of that region to detach the detachment layer. The method includes fabricating an intermediate substrate including a first buried layer, and a second covering layer that covers all or part of the first layer, with the covering layer being substantially transparent to the light flux and with the buried layer formed by implantation of particles into the substrate, followed by absorbing the flux, and selectively and adiabatically irradiating a treated region of the buried layer until at least partial decomposition of the material constituting it ensues.

Abstract: The invention concerns a method for fabricating a substrate in semiconductor material characterized in that it comprises the steps of: starting from a donor substrate in a first semiconductor material at an initial temperature, contacting a surface of the donor substrate with a bath of a second semiconductor material held in the liquid state at a temperature higher than the initial temperature, the second semiconductor material being chosen so that its melting point is equal to or lower than the melting point of the first semiconductor material, solidifying the bath material on the surface to thicken the donor substrate with a solidified layer. The invention also concerns a device for implementing the method.

Abstract: A process for transferring a thin film includes forming a layer of inclusions to create traps for gaseous compounds. The inclusions can be in the form of one or more implanted regions that function as confinement layers configured to trap implanted species. Further, the inclusions can be in the form of one or more layers deposited by a chemical vapor deposition, epitaxial growth, ion sputtering, or a stressed region or layer formed by any of the aforementioned processes. The inclusions can also be a region formed by heat treatment of an initial support or by heat treatment of a layer formed by any of the aforementioned processes, or by etching cavities in a layer. In a subsequent step, gaseous compounds are introduced into the layer of inclusions to form micro-cavities that form a fracture plane along which the thin film can be separated from a remainder of the substrate.

Abstract: The invention relates to a detachable substrate for the electronics, optics or optoelectronics industry, that includes a detachable layer resting on a buried weakened region. This substrate is remarkable in that this buried weakened region consists of a semiconductor material that is denser in the liquid state than in the solid state and that contains in places precipitates of naturally volatile impurities. The invention also relates to a process for fabricating and detaching a detachable substrate.

Abstract: A process for transferring a thin film includes forming a layer of inclusions to create traps for gaseous compounds. The inclusions can be in the form of one or more implanted regions that function as confinement layers configured to trap implanted species. Further, the inclusions can be in the form of one or more layers deposited by a chemical vapor deposition, epitaxial growth, ion sputtering, or a stressed region or layer formed by any of the aforementioned processes. The inclusions can also be a region formed by heat treatment of an initial support or by heat treatment of a layer formed by any of the aforementioned processes, or by etching cavities in a layer. In a subsequent step, gaseous compounds are introduced into the layer of inclusions to form micro-cavities that form a fracture plane along which the thin film can be separated from a remainder of the substrate.

Abstract: The present invention relates to a process for smoothing the surface of a semiconductor wafer by fusion. The process includes defining a reference length which dimensions wafer surface roughness that is to be reduced or removed, and scanning the surface with a fusion beam while adjusting parameters of the fusion beam so as to fuse, during the scanning of the surface, a local surface zone of the wafer whose length is greater than or equal to the reference length, with the scanning continued to smooth the entire surface of the wafer by eliminating surface roughnesses of period lower than the reference length. The present invention also relates to a semiconductor wafer having a surface layer made of a semiconducting material that is smoothed by the process and that does not exhibit any roughness of period lower than the reference length.

Abstract: This invention provides composite semiconductor substrates and methods for fabricating such substrates. The composite structures include a semiconductor substrate, a semiconductor superstrate and an intermediate layer interposed between the substrate and the superstrate that comprises a material that undergoes a structural transformation when subject to a suitable heat treatment. The methods provide such a heat treatment so that the intermediate layer becomes spongy or porous, being filled with numerous micro-bubbles or micro-cavities containing a gaseous phase. The composite semiconductor substrates with structurally-transformed intermediate layers have numerous applications.

Abstract: A process for transferring a thin film includes forming a layer of inclusions to create traps for gaseous compounds. The inclusions can be in the form of one or more implanted regions that function as confinement layers configured to trap implanted species. Further, the inclusions can be in the form of one or more layers deposited by a chemical vapor deposition, epitaxial growth, ion sputtering, or a stressed region or layer formed by any of the aforementioned processes. The inclusions can also be a region formed by heat treatment of an initial support or by heat treatment of a layer formed by any of the aforementioned processes, or by etching cavities in a layer. In a subsequent step, gaseous compounds are introduced into the layer of inclusions to form micro-cavities that form a fracture plane along which the thin film can be separated from a remainder of the substrate.