Abstract: The invention relates to an optical device with an integrated structure for transporting at least one optical wave. The inventive device comprises at least one primary optical guiding means and at least two secondary optical guiding means which cut through the primary guiding means at junctions; a channel which passes through said junctions; a fluid section which fills at least one portion of said channel and which comprises one segment of a primary fluid, which can reflect the optical wave to be transported, and, on either side of said segment, a secondary fluid through which the optical wave can pass; means for moving said fluid section so as to direct selectively the primary fluid segment through said junctions; the channel passes through said junctions in such a way that, when the primary fluid segment is disposed in a selected junction, the transported optical wave is deviated from the primary optical guiding means towards the corresponding secondary optical guiding means, or vice versa.

Abstract: The aim of the invention is a method for producing a layer (2) of a first material embedded in a substrate (1) comprising at least one second material. The method comprises the following stages: formation in the substrate (1), at the level of the desired embedded layer, of a layer of microcavities intended to serve as centers of nucleation to produce said first material in said second material, formation of precipitate embryos from the nucleation centers formed, the precipitate embryos corresponding to the first material, growth of the precipitates from the embryos through species concentration corresponding to the first material and carried to the microcavity layer.

Abstract: The invention relates to a method of producing a thin layer of semiconductor material including: a step of implanting ions through a flat face (2) of a semiconductor wafer in order to create a layer of microcavities, the ion dose being within a specific range in order to avoid the formation of blisters on the flat face, a thermal treatment step in order to achieve coalescence of the microcavities a possibly, a step of creating at least one electronic component (5) in the thin layer (6), a separation step of separating the thin layer (6) from the rest (7) of the wafer.

Abstract: The invention relates to a process for making a thin film starting from a substrate (1) of a solid material with a plane face (2) comprising: the implantation of gaseous compounds in the substrate (1) to make a layer of micro-cavities (4) at a depth from the said plane face (2) corresponding to the thickness of the required thin film, the gaseous compounds being implanted under conditions that could weaken the substrate at the layer of micro-cavities, partial or total separation of the thin film from the rest of the substrate (1), this separation comprising a step in which thermal energy is added and pressure is applied to the said plane face (2).

Abstract: The invention relates to a method of producing a thin layer of semiconductor material including:-a step of implanting ions through a flat face (2) of a semiconductor wafer in order to creat a layer of microcavities, the ion dose being within a specific range in order to avoid the formation of blisters on the flat face,-a thermal treatment step in order to achieve coalescence of the microcavities-possibly, a step of creating at least one electronic component (5) in the thin layer (6), -a separation step of separating the thin layer (6) from the rest (7) of the wafer.

Abstract: A multiplayer integrated optical structure includes an integrated optical microguide having an integrated core for transmitting at least a light wave. A gap extends along the transmission core and encloses at least part of its periphery. This gap is filled with a material whose elasticity or deformability are higher than those of the lower layer and those of the upper layer of the core. Thus, the stresses and/or possible deformations of the core can be eliminated or reduced.

Abstract: A process for transfer of at least one thin film of solid material delimited in an initial substrate. The process includes a step in which a layer of inclusions is formed in the initial substrate at a depth corresponding to the required thickness of the thin film. These inclusions are designed to form traps for gaseous compounds which subsequently are implanted. In a subsequent step gaseous compounds are implanted in a manner to convey the gaseous compounds into the layer of inclusions. The dose of implanted gaseous compounds is made sufficient to cause the formation of micro-cavities to form a fracture plane along which the thin film can be separated from the remainder of the substrate.

Abstract: The invention concerns a method for making an optical structure and a multilayer optical structure provided with optical guide means for transmitting at least a light wave, which consists in: providing a substrate with a first layer and a second layer (4); etching out in the second electrically conducting layer (4) a groove (5) having two opposite ends (5a, 5b) and partly enclosing a first zone (6) of said layer; filling said groove with an electrically insulating material (7); etching out a cavity (9) in the second layer then in the first non-electrically conducting layer (3) partly enclosing a second zone (10) of the second layer (4), adjacent to or extending said first zone (6) and wherein emerges said groove (5); said cavity comprises a clearance in the second layer beneath at least part of the second zone; such that the closed part (14) of the second layer corresponding to said zones is electrically isolated from the rest of said layer and the cleared part beneath said second zone constitutes a beam (16)

Abstract: The invention concerns a method for making a thin layer from a structure, including the following steps:

Abstract: Chips, and methods of manufacturing thereof, comprising a base having a surface, and a plurality of components integrated in the base. Each component is coupled to at least one individual electrode disposed on the surface and to a counter-electrode. Each component operates as an electric generator, when activated by a power supply external to the chip. The counter-electrode is disposed such that each activated component creates a polarization voltage and/or a polarization current between that at least one individual electrode and the counter-electrode, when a medium is brought into contact with the surface.

Abstract: This invention relates to a process for transfer of at least one thin film of solid material delimited in an initial substrate (20).

Abstract: A device for transmitting optical waves comprises a structure having at least an optical guide element wherein the structure comprises hollow parts or notches (9, 10) adapted to receive the end parts (13, 14) of an optical fibre (12) such that the fibre spans the surface (11a) of the structure separating the hollow parts and the ends of the optical fibre are respectively optically coupled to optical guide elements (7, 8) of the structure. The invention also concerns a method for making such a device which consists in etching the notch by cutting off the end of the optical micro-guide. The device is useful for producing optical switches.

Abstract: Integrated circuit comprising: at least one first and one second power supply terminal (418, 420), at least one active area (302, 304, 306, 308) formed in a thin layer (206) of a substrate and electrically connected to at least one of the power supply terminals. According to the invention, the circuit also comprises capacitive decoupling means formed by at least one dielectric capacitor (110, 112, 114) connected between the said, first and second power supply terminals and formed in a region of the substrate that is electrically insulated from the thin substrate layer (206). Applications include the manufacture of portable electronic equipment.

Abstract: A substrate holder is provided with two kinds of grooves (clearances) in the absorbing surface thereof. One kind of groove is made of a suitable depth so as to be able to quickly exhaust air and reduce pressure to thereby vacuum mount a substrate, and the other kind of groove is formed with a very small depth within such a range that there is no influence of dust being interposed between the holder and the substrate, in order to better the heat conduction between the substrate and the substrate holder. In addition, the area of the latter is made large as compared with the area of the former.

Abstract: The invention relates to a method for producing a thin membrane, comprising the following steps: implanting gas species, through one surface of a first substrate (10) and through one surface of a second substrate (20), which in said substrates are able to create microcavities (11, 21) delimiting, for each substrate, a thin layer (13, 23) lying between these microcavities and the implanted surface, the microcavities being able, after their implantation, to cause detachment of the thin layer from its substrate; assembly of the first substrate (10) onto the second substrate (20) such that their implanted surfaces face one another; detaching each thin layer (13, 23) from its substrate (10, 20), the thin layers remaining assembled together to form said thin membrane. The invention also concerns a thin membrane structure obtained with this method.

Abstract: Integrated circuit comprising:

Abstract: A structure comprising a thin layer (2) that can be integral with a support (3), the thin layer being a layer of a semiconductor material made insulating by ion implantation except for at least one zone that permits a vertical electrical connection through the entire thickness of the thin layer (2). A method of manufacturing such a structure is also disclosed.

Abstract: The invention concerns a thin layer semi-conductor structure including a semi-conductor surface layer (2) separated from a support substrate (1) by an intermediate zone (3), the intermediate zone (3) being a multi-layer electrically insulating the semi-conductor surface layer from the support substrate. The intermediate zone has a considered sufficiently good electrical quality of interface with the semi-conductor surface layer and includes at least one first layer, of satisfactory thermal conductivity to provide a considered as correct operation of the electronic device or devices which are to be elaborated from the semi-conductor surface layer (2), the intermediate zone including additionally a second insulating layer of low dielectric constant, located between the first layer and the support substrate.

Abstract: A structure comprising a thin layer (2) that can be integral with a support (3), the thin layer being a layer of a semiconductor material made insulating by ion implantation except for at least one zone that permits a vertical electrical connection through the entire thickness of the thin layer (2). A method of manufacturing such a structure is also disclosed.

Abstract: The present invention relates to a production method for a thin film on a support that includes an ionic implantation stage in order to demarcate the thin film in a substrate, the aim of the ionic implantation being to create a layer of micro-cavities in the substrate, a stage to bond the substrate to a support element using close contact and a heat treatment stage intended to bring the layer of micro-cavities to a temperature that is high enough to cause a split along said layer. At least one of said elements, substrate or support, is thinned before the heat treatment stage in order to maintain the close contact between the substrate and the support despite the stresses caused in the elements and resulting from the difference in their thermal dilation coefficients.