Abstract: Process for producing a buried insulating layer in a semiconductor substrate by ion implantation.This process consists of producing a mask on the substrate regions where the active zones are located, carrying out oxygen or nitrogen ion implantation in the substrate through the mask for the direct forming in the exposed area, and forming by lateral dispersion and diffusion into the substrate of implanted ions beneath the mask, a continuous oxide or nitride insulating layer which is buried in the substrate and optionally annealing the implanted substrate for reinforcing the continuity of the insulating layer by lateral diffusion of the implanted ions.

Abstract: In a process for implanting particles in a solid in which is produced a substantially parallel beam of high-energy primary particles secondary particles are placed in the path of the latter and by interaction with the primary particles are projected towards the target with a sufficiently high energy level to penetrate the same. The secondary particles are in the gaseous state, the gas occupying an area facing the target.The apparatus for implanting particles in a solid has a target support and a solid target in a vacuum enclosure. It also has a source of high-energy primary particles, which supplies a substantially parallel beam thereof, a source of the secondary particles to be implanted in the target, a means for confining the secondary particles and communicating with the secondary particle source and having a primary opening for receiving the primary particle beam and a secondary opening for ejecting the secondary recoil particles towards the target.

Abstract: Process and apparatus for varying the deflection of the path of a charged particle beam over a path of length l in a space volume V, where there is a magnetic induction B (x,y,z), wherein a relative displacement of volume V with respect to the beam is produced in such a way as to vary the magnitude .intg.BDl calculated along the path and characterizing the deflection undergone by the beam on passing through volume V. In some of the embodiments rotating magnetic pole pieces are employed to vary the path. Fixed inclined faced pole pieces are also employed.

Abstract: Process and apparatus for obtaining beams of particles having a spatially modulated density, application to ion implantation and etching.For example, the invention consists of passing the particles of one beam into a long life excited state, selectively ionizing the excited particles with the aid of light having an adequate energy and spatially modulated intensity directed onto the excited particles, and separating the ionized particles from the particles which have remained excited, so as to obtain a beam of excited particles and a beam of ionized particles having a spatially modulated density.

Abstract: The invention relates to an apparatus for treating samples comprising in a vacuum enclosure a cathode, an actual anode and a grid, as well as means for supplying the sample to the enclosure, a high voltage generator, a capacitor C.sub.1 charged by way of the said generator, a spark gap switch for producing a high energy pulse between the cathode and the grid, said switch being connected to one terminal of said capacitor, an element for producing pulses controlling the spark gap switch and a capacitor C.sub.2 having a capacitance above that of capacitor C.sub.1, charged by way of the generator used for producing between the actual anode and the cathode an electric field for accelerating and extracting electrons used for the bombardment of the sample.

Abstract: Target holder with mechanical scanning. The device comprises several target supports mounted on a plate, which rotates about an axis and means for displacing the supports relative to the plate, arranged in such a way that the radial displacement increment of a support between two consecutive passages in front of the beam is constant throughout the duration of a sweep between two end positions of the support.Application to ion implantation on a silicon wafer.

Abstract: The present invention relates to a process for doping semiconductors, comprising the steps of: effecting implantation by recoil consisting in depositing on the surface of the substrate a layer of material containing dopant particles and in bombarding said layer by means of a beam of bombarding particles, which are in particular non-dopant, so as to cause the dopant particles to penetrate in the substrate; eliminating the layer of material deposited on the surface of the substrate; and effecting transitory annealing. The invention is applicable to the manufacture of solar cells.

Abstract: The present invention relates to a process for fast doping of semiconductors, consisting in implanting foreign particles in a substrate and in rendering them electrically active so as to modify the physical properties of said substrate, wherein the foreign particles constituting the dopant material arrive on the substrate closely in time and space so that the energy brought by each particle when it is implanted in the substrate cooperates with the energy of the other particles so as to produce a local liquefaction of the substrate, allowing the particles to be positioned in the substitutional sites of the crystal lattice of the substrate and allowing said crystal lattice, which was disturbed when the particles penetrated in the substrate, to be rearranged.

Abstract: The present invention relates to a process for doping semiconductors, comprising the successive steps of: effecting implantation by recoil consisting in depositing on the surface of the substrate a layer of material containing dopant particles and in bombarding said layer by means of a beam of bombarding particles, which are in particular non-dopant, so as to cause the dopant particles to penetrate in the substrate; eliminating the layer of material deposited on the surface of the substrate; and effecting transitory annealing. The invention is applicable to the manufacture of solar cells.