Abstract: Disclosed is a charged particle radiation device having a charged particle source which generates a charged particle as a probe, a charged particle optical system, a sample stage, a vacuum discharge system, an aperture which restricts a probe, a conductive film, and a charged particle detector, wherein the conductive film is provided at a position excluding the optical axis of the optical system between the sample stage and the aperture; and the distance between the sensing surface of the surface of the charged particle detector and the sample stage is larger than the distance between the sample stage and the conductive film, so that the surface of the conductive film and the sensing surface of the detector are inclined.

Abstract: In observation of a sample having a structure in its depth direction, a charged particle beam apparatus that can form an SEM image reflecting a sample shape at a desired depth by a single image acquisition while avoiding enlargement of the apparatus is provided. The apparatus has: an irradiation optical system for irradiating and scanning a charged particle beam generated from a charged particle source on the sample; a detection optical system having a detector that detects charged particles generated from the sample by the irradiation of the charged particle beam, and converts them into an electric signal at a predetermined sampling period; and an image processing unit for forming an image based on the electric signal from the detector, in which the image processing unit detects a peak of wave height values for each pixel from the electric signal at each sampling time, and forms the image based on the peak of the detected wave height values.

Abstract: To provide a low acceleration scanning electron microscope that can discriminate and detect reflected electrons and secondary electrons even with a low probe current, this scanning electron microscope is provided with an electron gun (29), an aperture (26), a sample table (3), an electron optical system (4-1) for making an electron beam (31) converge on a sample (2), a deflection means (10), a secondary electron detector (8), a reflected electron detector (9), and a cylindrical electron transport means (5) in a position between the electron gun (29) and sample (2). The reflected electron detector (9) is provided within the electron transport means (5) and on a side further away from the electron gun (29) than the secondary electron detector (8) and the deflection means (10). The reception surface (9-1) of the reflected electron detector (9) is electrically wired so as to have the same potential as the electron transport means (5).

Abstract: An object of the invention is to provide a scanning electron microscope which forms an electric field to lift up, highly efficiently, electrons discharged from a hole bottom or the like even if a sample surface is an electrically conductive material. To achieve the above object, according to the invention, a scanning electron microscope including a deflector which deflects a scanning position of an electron beam, and a sample stage for loading a sample thereon, is proposed. The scanning electron microscope includes a control device which controls the deflector or the sample stage in such a way that before scanning a beam on a measurement target pattern, a lower layer pattern situated in a lower layer of the measurement target pattern undergoes beam irradiation on another pattern situated in the lower layer.

Abstract: In order to provide a charged particle beam apparatus that can detect charged particle beam signals in discrimination into a plurality of energy bands, and obtain high-resolution images for each of the energy bands using the signals, the charged particle beam apparatus has a charged particle source (12-1); an aperture (16) that limits the diameter of the charged particle beam (4); optics (14, 17, 19) for the charged particle beam; a specimen holder (21); a charged particle detector (40) that detects secondary charged particles and reflected charged particles from a specimen; and signal calculation unit that processes the output signal from the charged particle detector.

Abstract: There is provided a technique to correctly select and measure a pattern to be measured even when contours of the pattern are close to each other in a sample including a plurality of patterns on a substantially same plane. A pattern measuring apparatus that scans a sample with charged particles, forms a detected image by detecting secondary charged particles or backscattered charged particles generated from the sample, and measures a pattern imaged on the detected image includes: an image acquiring section acquiring a plurality of detected images taken at a substantially same location on the sample under different imaging conditions; a contour extracting section extracting a plurality of pattern contours from the plurality of detected images; a contour reconstructing section reconstructing a contour to be measured by combining the plurality of pattern contours; and a contour measuring section making a measurement using the reconstructed contour to be measured.

Abstract: The present invention provides an electron beam apparatus comprising a means for visualizing an axial displacement of a retarding electric field, and a means for adjusting axial displacement. The axial displacement visualizing means includes a reflective plate (6), and an optical system (2,3) for converging a secondary electron beam (9) on the reflective plate (6), and the axial displacement adjusting means includes an incline rotation mechanism (8) for a sample stage (5). With this configuration, in electron beam apparatuses such as SEM and the like, such problems as visual field displacement caused by displacement of the axial symmetry of the electric field between an objective lens (3) and a sample (4) and inability to measure secondary electrons and reflected electrons that provide desired information can be eliminated.

Abstract: Disclosed is a charged particle radiation device having a charged particle source which generates a charged particle as a probe, a charged particle optical system, a sample stage, a vacuum discharge system, an aperture which restricts a probe, a conductive film, and a charged particle detector, wherein the conductive film is provided at a position excluding the optical axis of the optical system between the sample stage and the aperture; and the distance between the sensing surface of the surface of the charged particle detector and the sample stage is larger than the distance between the sample stage and the conductive film, so that the surface of the conductive film and the sensing surface of the detector are inclined.

Abstract: In order to provide a charged particle beam apparatus that can detect charged particle beam signals in discrimination into a plurality of energy bands, and obtain high-resolution images for each of the energy bands using the signals, the charged particle beam apparatus has a charged particle source (12-1); an aperture (16) that limits the diameter of the charged particle beam (4); optics (14, 17, 19) for the charged particle beam; a specimen holder (21); a charged particle detector (40) that detects secondary charged particles and reflected charged particles from a specimen; and signal calculation unit that processes the output signal from the charged particle detector.

Abstract: A scanning electron microscope can discriminate secondary particles in a desired energy region by band-pass and detect the secondary particles with a high yield point. Even when a lens 23 is disposed on an electron source side of an objective lens 18, and a primary electron beam forms any optical system on the electron gun side of the lens, the lens operates the primary electron beam to be converged to a convergent point 24 that is a specific position. A detection ExB 16 that supplies a field that affects the locus of the secondary particles that are generated from a specimen 2 is disposed at the convergent point 24 of the primary electron beam so as to lead only the secondary particles in a specific energy range to a detection unit 13.

Abstract: In a VP-SEM that uses gas multiplication induced within a low-vacuum sample chamber and uses a method of detecting a positive displacement current, a secondary electron detector for the VP-SEM that responds at high speed, which can acquire a TV-Scan rate image at a low cost while saving a space is provided. A secondary electron detector is formed by forming the electron supplying electrode and the detection electrode on the flexible thin film type substrate such as a polyimide film, etc., by an etching method. Thereby, the space can be saved while realizing low cost due to mass production. Further, the ion horizontally moving with respect to the surface of the secondary electron detector is detected and the ion moving in a vertical direction returned to the sample holder is not detected, making it possible to realize a high-speed response.

Abstract: In a scanning electron microscope, a reflection plate at ground potential is provided in a specimen chamber and backscattering electrons given off from a specimen impinge on the reflection plate to generate subsidiary electrons. An electric field supply electrode applied with a positive voltage of +100 to +500V is arranged in a gap defined by the reflection plate and a specimen stage. A first detection electrode is arranged to detect ion current attributable to backscattering electrons and a second detection electrode is arranged to detect current representative of coexistence of ion currents attributable to secondary electron and backscattering electron. The scanning electron microscope constructed as above can achieve simultaneous separation/detection of secondary electron and backscattering electron.

Abstract: A scanning electron microscope includes an irradiation optical system for irradiating an electron beam to a sample; a sample holder for supporting the sample, arranged inside a sample chamber; at least one electric field supply electrode arranged around the sample holder; and an ion current detection electrode.

Abstract: In a VP-SEM that uses gas multiplication induced within a low-vacuum sample chamber and uses a method of detecting a positive displacement current, a secondary electron detector for the VP-SEM that responds at high speed, which can acquire a TV-Scan rate image at a low cost while saving a space is provided. A secondary electron detector is formed by forming the electron supplying electrode and the detection electrode on the flexible thin film type substrate such as a polyimide film, etc., by an etching method. Thereby, the space can be saved while realizing low cost due to mass production. Further, the ion horizontally moving with respect to the surface of the secondary electron detector is detected and the ion moving in a vertical direction returned to the sample holder is not detected, making it possible to realize a high-speed response.

Abstract: The present invention provides a highly sensitive, thin detector useful for observing low-voltage, high-resolution SEM images, and provides a charged particle beam application apparatus based on such a detector. The charged particle beam application apparatus includes a charged particle irradiation source, a charged particle optics for irradiating a sample with a charged particle beam emitted from the charged particle irradiation source, and an electron detection section for detecting electrons that are secondarily generated from the sample. The electron detection section includes a diode device that is a combination of a phosphor layer, which converts the electrons to an optical signal, and a device for converting the optical signal to electrons and subjecting the electrons to avalanche multiplication, or includes a diode device having an electron absorption region that is composed of at least a wide-gap semiconductor substrate with a bandgap greater than 2 eV.

Abstract: A scanning electron microscope includes an irradiation optical system for irradiating an electron beam to a sample; a sample holder for supporting the sample, arranged inside a sample chamber; at least one electric field supply electrode arranged around the sample holder; and an ion current detection electrode.

Abstract: A scanning charged particle microscope which facilitates adjustment, has a deep focal depth, and is provided with an aberration correction means. The state of aberration correction is judged from a SEM image by using a stop having plural openings and the judgment result is fed back to the adjustment of the aberration correction means. A stop of a nearly orbicular zone shape is used in combination with the aberration correction means.

Abstract: A scanning electron microscope can discriminate secondary particles in a desired energy region by band-pass and detect the secondary particles with a high yield point. Even when a lens 23 is disposed on an electron source side of an objective lens 18, and a primary electron beam forms any optical system on the electron gun side of the lens, the lens operates the primary electron beam to be converged to a convergent point 24 that is a specific position. A detection ExB 16 that supplies a field that affects the locus of the secondary particles that are generated from a specimen 2 is disposed at the convergent point 24 of the primary electron beam so as to lead only the secondary particles in a specific energy range to a detection unit 13.

Abstract: In a scanning electron microscope, a reflection plate at ground potential is provided in a specimen chamber and backscattering electrons given off from a specimen impinge on the reflection plate to generate subsidiary electrons. An electric field supply electrode applied with a positive voltage of +100 to +500V is arranged in a gap defined by the reflection plate and a specimen stage. A first detection electrode is arranged to detect ion current attributable to backscattering electrons and a second detection electrode is arranged to detect current representative of coexistence of ion currents attributable to secondary electron and backscattering electron. The scanning electron microscope constructed as above can achieve simultaneous separation/detection of secondary electron and backscattering electron.

Abstract: A scanning charged particle microscope which facilitates adjustment, has a deep focal depth, and is provided with an aberration correction means. The state of aberration correction is judged from a SEM image by using a stop having plural openings and the judgment result is fed back to the adjustment of the aberration correction means. A stop of a nearly orbicular zone shape is used in combination with the aberration correction means.