Abstract: A method and apparatus for coupling a semiconductor die to terminals of a die package in which the die is housed. The apparatus comprises a die having first and second terminals. A first conductive member is elongated between a first end portion and a second end portion thereof such that the second end portion is proximate to the first terminal. A second conductive member is elongated between a first end portion and second end portion thereof such that the second end portion of the second conductive member is proximate to the second terminal of the die and the second conductive member is generally parallel to the first conductive member. The second end portions of the first and second conductive members may be coupled with conductive couplers to the first and second die terminals, respectively. The conductive members and conductive couplers may be sized and shaped to produce a selected capacitance and/or a selected impedance at the die terminals.

Abstract: An integrated circuit including a fabricated die having a cyanate ester buffer coating material thereon. The cyanate ester buffer coating material includes one or more openings for access to the die. A package device may be connected to the die bond pads through such openings. Further, an integrated circuit device is provided that includes a fabricated wafer including a plurality of integrated circuits fabricated thereon. The fabricated wafer has an upper surface with a cyanate ester buffer coating material cured on the upper surface of the fabricated integrated circuit device. Further, a method of producing an integrated circuit device includes providing a fabricated wafer including a plurality of integrated circuits and applying a cyanate ester coating material on a surface of the fabricated wafer. The application of cyanate ester coating material may include spinning the cyanate ester coating material on the surface of the fabricated wafer to form a buffer coat.

Abstract: A semiconductor die includes a metal layer deposited thereon for enhancing adhesion between the die and a mold compound package. The metal layer is substantially oxide free. The die is coated with a layer or layers of copper (Cu) and/or palladium (Pd) by electroplating or electroless coating techniques. The metal layer provides a uniform wetting surface for better adhesion of the die with the mold compound during encapsulation. The increased adhesion reduces the delamination potential of the die from the package.

Abstract: A footwear sole is provided that comprises a first layer and a display element integral with the first layer. The first layer has a lower surface and an upper surface and is at least semi-transparent such that the display element is observable through the first layer.

Abstract: A high density semiconductor package with thermally enhanced properties is described. The semiconductor package includes a pair of lead frames, each being attached to a respective semiconductor die. The dies are attached to respective lead frames via an adhering material, such as a tape. Further, the dies are each electrically connected to fingers of each lead frame. In one illustrated embodiment, the dies and portions of the fingers are encapsulated in such a way as to leave one surface of each die exposed. In another illustrated embodiment, heat dissipation for the semiconductor package occurs through exposed fingers of the lead frames which adhere semiconductor dies within a cavity located therebetween.

Abstract: A high density semiconductor package with thermally enhanced properties is described. The semiconductor package includes a pair of lead frames, each being attached to a respective semiconductor die. The dies are attached to respective lead frames via an adhering material, such as a tape. Further, the dies are each electrically connected to fingers of each lead frame. In one illustrated embodiment, the dies and portions of the fingers are encapsulated in such a way as to leave one surface of each die exposed. In another illustrated embodiment, heat dissipation for the semiconductor package occurs through exposed fingers of the lead frames which adhere semiconductor dies within a cavity located therebetween.

Abstract: A semiconductor package includes a substrate and a semiconductor die wire bonded, or alternately flip chip bonded, to the substrate. The substrate includes three separate layers including a conductive layer having a pattern of conductive traces, a first insulating layer covering the conductive traces, and a second insulating layer covering the die. The insulating layers also include planar surfaces having external contacts, and conductive vias in electrical communication with the external contacts and with the conductive traces. The external contacts have matching patterns, such that the package can be stacked on a substantially identical package to form a stacked electronic assembly. In addition, the packages in the stacked assembly can have different circuit configurations, and can perform different functions in the assembly.

Abstract: A semiconductor package includes a substrate and a semiconductor die wire bonded, or alternately flip chip bonded, to the substrate. The substrate includes three separate layers including a conductive layer having a pattern of conductive traces, a first insulating layer covering the conductive traces, and a second insulating layer covering the die. The insulating layers also include planar surfaces having external contacts, and conductive vias in electrical communication with the external contacts and with the conductive traces. The external contacts have matching patterns, such that the package can be stacked on a substantially identical package to form a stacked electronic assembly. In addition, the packages in the stacked assembly can have different circuit configurations, and can perform different functions in the assembly.

Abstract: An integrated circuit including a fabricated die having a cyanate ester buffer coating material thereon. The cyanate ester buffer coating material includes one or more openings for access to the die. A package device may be connected to the die bond pads through such openings. Further, an integrated circuit device is provided that includes a fabricated wafer including a plurality of integrated circuits fabricated thereon. The fabricated wafer has an upper surface with a cyanate ester buffer coating material cured on the upper surface of the fabricated integrated circuit device. Further, a method of producing an integrated circuit device includes providing a fabricated wafer including a plurality of integrated circuits and applying a cyanate ester coating material on a surface of the fabricated wafer. The application of cyanate ester coating material may include spinning the cyanate ester coating material on the surface of the fabricated wafer to form a buffer coat.

Abstract: A high density semiconductor package with thermally enhanced properties is described. The semiconductor package includes a pair of lead frames, each being attached to a respective semiconductor die. The dies are attached to respective lead frames via an adhering material, such as a tape. Further, the dies are each electrically connected to fingers of each lead frame. In one illustrated embodiment, the dies and portions of the fingers are encapsulated in such a way as to leave one surface of each die exposed. In another illustrated embodiment, heat dissipation for the semiconductor package occurs through exposed fingers of the lead frames which adhere semiconductor dies within a cavity located therebetween.

Abstract: A semiconductor die includes a metal layer deposited thereon for enhancing adhesion between the die and a mold compound package. The metal layer is substantially oxide free. The die is coated with a layer or layers of copper (Cu) and/or palladium (Pd) by electroplating or electroless coating techniques. The metal layer provides a uniform wetting surface for better adhesion of the die with the mold compound during encapsulation. The increased adhesion reduces the delamination potential of the die from the package.

Abstract: A chip scale semiconductor package and a method for fabricating the package are provided. The package includes a semiconductor die and a flex circuit bonded to the face of the die. The flex circuit includes a polymer substrate with a dense array of external contacts, and a pattern of conductors in electrical communication with the external contacts. The package also includes interconnects configured to provide separate electrical paths between die contacts (e.g., bond pads), and the conductors on the flex circuit.

Abstract: A semiconductor package includes a substrate and a semiconductor die wire bonded, or alternately flip chip bonded, to the substrate. The substrate includes three separate layers including a conductive layer having a pattern of conductive traces, a first insulating layer covering the conductive traces, and a second insulating layer covering the die. The insulating layers also include planar surfaces having external contacts, and conductive vias in electrical communication with the external contacts and with the conductive traces. The external contacts have matching patterns, such that the package can be stacked on a substantially identical package to form a stacked electronic assembly. In addition, the packages in the stacked assembly can have different circuit configurations, and can perform different functions in the assembly.

Abstract: A computer system, a printed circuit board assembly, and a multiple die semiconductor assembly are provided comprising first and second semiconductor dies and an intermediate substrate. The first semiconductor die defines a first active surface including at least one conductive bond pad. The second semiconductor die defines a second active surface including at least one conductive bond pad. The intermediate substrate is positioned between the first active surface of the first semiconductor die and the second active surface of the second semiconductor die such that a first surface of the intermediate substrate faces the first active surface and such that a second surface of the intermediate substrate faces the second active surface. The first semiconductor die is electrically coupled to the intermediate substrate by at least one topographic contact extending from the first active surface to the first surface of the intermediate substrate. The intermediate substrate defines a passage there through.

Abstract: An integrated circuit including a fabricated die having a cyanate ester buffer coating material thereon. The cyanate ester buffer coating material includes one or more openings for access to the die. A package device may be connected to the die bond pads through such openings. Further, an integrated circuit device is provided that includes a fabricated wafer including a plurality of integrated circuits fabricated thereon. The fabricated wafer has an upper surface with a cyanate ester buffer coating material cured on the upper surface of the fabricated integrated circuit device. Further, a method of producing an integrated circuit device includes providing a fabricated wafer including a plurality of integrated circuits and applying a cyanate ester coating material on a surface of the fabricated wafer. The application of cyanate ester coating material may include spinning the cyanate ester coating material on the surface of the fabricated wafer to form a buffer coat.

Abstract: A footwear sole is provided that comprises a first layer and a display element integral with the first layer. The first layer has a lower surface and an upper surface and is at least semi-transparent such that the display element is observable through the first layer.

Abstract: A chip scale semiconductor package and a method for fabricating the package are provided. The package includes a semiconductor die and a flex circuit bonded to the face of the die. The flex circuit includes a polymer substrate with a dense array of external contacts, and a pattern of conductors in electrical communication with the external contacts. The package also includes interconnects configured to provide separate electrical paths between die contacts (e.g., bond pads), and the conductors on the flex circuit.

Abstract: A method for forming a semiconductor device comprises the steps of providing a semiconductor die having a plurality of pads thereon with at least one bond wire electrically coupled with one of the pads and providing a holder having a cavity therein. The die is placed in the cavity, then a layer of encapsulation is formed within the cavity to cover the die. Subsequently, the encapsulated die is removed from the cavity.

Abstract: A chip scale semiconductor package and a method for fabricating the package are provided. The package includes a semiconductor die and a flex circuit bonded to the face of the die. The flex circuit includes a polymer substrate with a dense array of external contacts, and a pattern of conductors in electrical communication with the external contacts. The package also includes interconnects configured to provide separate electrical paths between die contacts (e.g., bond pads), and the conductors on the flex circuit.

Abstract: A method and apparatus for coupling a semiconductor die to terminals of a die package in which the die is housed. The apparatus comprises a die having first and second terminals. A first conductive member is elongated between a first end portion and a second end portion thereof such that the second end portion is proximate to the first terminal. A second conductive member is elongated between a first end portion and second end portion thereof such that the second end portion of the second conductive member is proximate to the second terminal of the die and the second conductive member is generally parallel to the first conductive member. The second end portions of the first and second conductive members may be coupled with conductive couplers to the first and second die terminals, respectively. The conductive members and conductive couplers may be sized and shaped to produce a selected capacitance and/or a selected impedance at the die terminals.