Abstract: A method for manufacturing an ABC.sub.2 chalcopyrite film (wherein A represents Cu or Ag, B represents In, Ga or Al, C represents S, Se or Te) comprises; a first step of forming a film of a composition of ABC.sub.2 containing element A in excess; a second step of exposing the film formed in the first step to a flux or gas containing element B and C, or to a gas or flux containing element A, B and C but containing element B in excess; and monitoring an electrical or optical property of the film in order to determine an end point of the second step where the electrical or optical property of the film demonstrates a specific change.

Abstract: A chalcopyrite compound, for instance, CuInS.sub.2 or CuInSe.sub.2, is prepared by subjecting a thin film containing copper metal, indium metal, and an indium compound or a compound which contains both indium and copper, selected from the group consisting of oxides, sulfides and selenides, with heat under a reducing atmosphere containing at least one of the Group VIb element or under an atmosphere containing a reducing compound of at least one of the Group VIb element, thereby converting said thin film into a chalcopyrite compound.

Abstract: Chalcopyrite compound semiconductor thin films represented by I-III-VI.sub.2-x V.sub.x or I-III-VI.sub.2-x VII.sub.x, and semiconductor devices having a I-III-VI.sub.2 /I-III-VI.sub.2-x V.sub.x or I-III-VI.sub.2 /I-III-VI.sub.2-x VII.sub.x chalcopyrite homojunction are provided. Such chalcopyrite compound semiconductor thin films are produced by radiating molecular beams or ion beams of the I, III, VI, and V or VII group elements simultaneously, or by doping I-III-VI.sub.2 chalcopyrite thin films with VII-group atoms after the formation thereof. Pollution-free solar cells are also provided, which are formed by the steps of forming a structure of a lower electrode, a chalcopyrite semiconductor thin film, and an upper electrode and radiating accelerated ion beams of a V, VII, or VIII group element thereto.

Abstract: A solar cell includes a compound semiconductor, which is a laminated film having compound semiconductor layers, and low melting point glass. When the solar cell is heated by fire, the low melting point glass melts to seal the compound semiconductor so that toxic substances contained in the compound semiconductor are not released into the air.

Abstract: A solar cell device includes an absorber layer or heterojunction-forming layer which comprises a I-III-VI.sub.2 chalcopyrite semiconductor film containing a Group VIIA element as a dopant. The semiconductor film can be made by depositing a I-III-VI.sub.2 chalcopyrite compound film onto a substrate while evaporating onto the substrate a Group VIIA element to obtain a I-III-VI.sub.2 chalcopyrite compound film containing a Group VIIA element therein as a dopant.

Abstract: A chalcopyrite-type compound, for instance, CuInS.sub.2 or CuGaS.sub.2, is prepared by subjecting a Group I-III oxide composition, containing at least one of the Group Ib element, for instance copper (Cu), and at least one of the Group IIIb element, for instance indium (In) or gallium (Ga) to a heat treatment under a reducing atmosphere containing the Group VIb element, for instance sulfur (S) or selenium (Se), or under an atmosphere containing a reducing compound of the Group VIb element, thereby converting said oxide composition into a chalcopyrite-type compound.

Abstract: Chalcopyrite compound semiconductor thin films represented by I-III-VI.sub.2-x V.sub.x or I-III-VI.sub.2-x VII.sub.x, and semiconductor devices having a I-III-VI.sub.2 /I-III-VI.sub.2-x V.sub.x or I-III-VI.sub.2 /I-III-VI.sub.2-x VII.sub.x chalcopyrite homojunction are provided. Such chalcopyrite compound semiconductor thin films are produced by radiating molecular beams or ion beams of the I, III, VI, and V or VII group elements simultaneously, or by doping I-III-VI.sub.2 chalcopyrite thin films with VII-group atoms after the formation thereof. Pollution-free solar cells are also provided, which are formed by the steps of forming a structure of a lower electrode, a chalcopyrite semiconductor thin film, and an upper electrode and radiating accelerated ion beams of a V, VII, or VIII group element thereto.

Abstract: A I-III-VI.sub.2 chalcopyrite semiconductor film containing a Group VII element as a dopant, and methods to produce such a chalcopyrite film are provided. The chalcopyrite film of the present invention has stoichiometric composition, and electrical characteristics such as p-n conduction type, carrier concentration and the like are controlled.