Patents by Inventor Min Cheng

Min Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10217761
    Abstract: A semiconductor structure for three-dimensional memory device and a manufacturing method thereof are provided. The semiconductor structure is disposed on the substrate and has a plurality of openings penetrating through the semiconductor structure and extending into the substrate. The semiconductor structure includes a substrate, a stacked structure and an epitaxial layer. The stacked structure includes insulating layers and gate layers stacked alternatively. Each of the plurality of openings includes a first portion located above the surface of the substrate and a second portion located below the surface of the substrate. The aspect ratio of the second portion is more than 1. The epitaxial layer is disposed in each of the plurality of openings. The top surface of the epitaxial layer is between the top surface and the bottom surface of the i-th insulating layer as counted upward from the substrate, wherein i?2.
    Type: Grant
    Filed: November 22, 2017
    Date of Patent: February 26, 2019
    Assignee: MACRONIX International Co., Ltd.
    Inventors: Chun-Ling Chiang, Chun-Min Cheng, Ming-Tsung Wu
  • Patent number: 10211211
    Abstract: A method for fabricating a buried word line (BWL) of a dynamic random access memory (DRAM) includes the steps of: forming a trench in a substrate; forming a barrier layer in the trench; performing a soaking process to reduce chlorine concentration in the barrier layer; and forming a conductive layer to fill the trench.
    Type: Grant
    Filed: December 4, 2017
    Date of Patent: February 19, 2019
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Kai-Jiun Chang, Yi-Wei Chen, Tsun-Min Cheng, Chia-Chen Wu, Pin-Hong Chen, Chih-Chieh Tsai, Tzu-Chieh Chen, Yi-An Huang
  • Patent number: 10199228
    Abstract: A manufacturing method of a metal gate structure includes the following steps. First, a substrate covered by an interlayer dielectric is provided. A gate trench is formed in the interlayer dielectric, wherein a gate dielectric layer is formed in the gate trench. A silicon-containing work function layer is formed on the gate dielectric layer in the gate trench. The silicon-containing work function layer includes a vertical portion and a horizontal portion. Finally, the gate trench is filled up with a conductive metal layer.
    Type: Grant
    Filed: April 5, 2017
    Date of Patent: February 5, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Nien-Ting Ho, Chien-Hao Chen, Hsin-Fu Huang, Chi-Yuan Sun, Wei-Yu Chen, Min-Chuan Tsai, Tsun-Min Cheng, Chi-Mao Hsu
  • Publication number: 20190027479
    Abstract: A method of fabricating a cobalt silicide layer includes providing a substrate disposed in a chamber. A deposition process is performed to form a cobalt layer covering the substrate. The deposition process is performed when the temperature of the substrate is between 50° C. and 100° C., and the temperature of the chamber is between 300° C. and 350° C. After the deposition process, an annealing process is performed to transform the cobalt layer into a cobalt silicide layer. The annealing process is performed when the substrate is between 300° C. and 350° C., and the duration of the annealing process is between 50 seconds and 60 seconds.
    Type: Application
    Filed: May 29, 2018
    Publication date: January 24, 2019
    Inventors: Chia-Chen Wu, Yi-Wei Chen, Chi-Mao Hsu, Kai-Jiun Chang, Chih-Chieh Tsai, Pin-Hong Chen, Tsun-Min Cheng, Yi-An Huang
  • Patent number: 10181871
    Abstract: In an interactive communication system, one or more stations enter a scan mode to receive ID codes transmitted by wearable devices and transmit the ID codes to a server. The server receives the ID codes and transmits a command to one of the wearable devices via at least one of the stations. The one of the wearable devices receives the command via the at least one of the stations and transmits a feedback, in response to the command, to the server. The stations can detect signal strengths of the wearable devices. The server can determine a location of each of the wearable devices according to the ID codes and the signal strengths detected by the stations.
    Type: Grant
    Filed: January 31, 2016
    Date of Patent: January 15, 2019
    Assignee: Chiun Mai Communication Systems, Inc.
    Inventors: Yi-Cheng Chen, Hsiu-Min Cheng, Chien-Yu Lin, Yi-Mo Chang, Sheng-Chien Huang, Jyu-Han Song
  • Publication number: 20190013320
    Abstract: A semiconductor memory device is provided, and which includes a substrate, plural gates, plural plugs, a capacitor structure and a conducting cap layer. The gates are disposed within the substrate, and the plugs are disposed on the substrate, with each plug electrically connected to two sides of each gate on the substrate. The capacitor structure is disposed on the substrate, and the capacitor structure includes plural capacitors, with each capacitor electrically connected to the plugs respectively. The conducting cap layer covers the top surface and sidewalls of the capacitor structure. Also, the semiconductor memory device further includes an adhesion layer and an insulating layer. The adhesion layer covers the conducting cap layer and the capacitor structure, and the insulating layer covers the adhesion layer.
    Type: Application
    Filed: May 22, 2018
    Publication date: January 10, 2019
    Inventors: Tzu-Chieh Chen, Pin-Hong Chen, Chih-Chieh Tsai, Chia-Chen Wu, Yi-An Huang, Kai-Jiun Chang, Tsun-Min Cheng, Yi-Wei Chen
  • Patent number: 10175593
    Abstract: A method includes grinding a wax into wax particles having a size in a range from about 600 microns to about 800 microns forming a mixture of the wax particles with water and a surfactant; and homogenizing the mixture to form a wax dispersion, the homogenizing step is maintained below about 35° C. A wax dispersion includes a wax a surfactant; and water, particles of the wax dispersion are a uniform, irregular, non-platelet morphology. A wax dispersion made by a process includes grinding a wax into wax particles having a size in a range from about 600 microns to about 800 microns, forming a mixture of the wax particles with water and a surfactant, and homogenizing the mixture to form a wax dispersion, the homogenizing step is maintained below about 35° C. and the wax has a uniform, irregular, non-platelet morphology imparted by combination of the grinding and homogenizing steps.
    Type: Grant
    Filed: August 29, 2016
    Date of Patent: January 8, 2019
    Assignee: XEROX CORPORATION
    Inventors: Judith M. Vandewinckel, Kevin F. Marcell, Chieh-Min Cheng, Brian J. Marion, Scott M. Smith
  • Publication number: 20180371522
    Abstract: The present invention provides a method for manufacturing a microbial detection device, microbial detection method, microbial detection kit and microbial detection device. The manufacturing method includes the following steps: defining a sampling portion and a reaction portion on a substrate. Fiber materials are disposed in the reaction portion and a surface of the reaction portion which contacts with the fiber materials comprises abundant hydroxyl groups. Reaction reagents are then added into the fiber materials. An acidic solution is applied to treat the fiber materials and the hydroxyl groups in the reaction portion.
    Type: Application
    Filed: September 4, 2018
    Publication date: December 27, 2018
    Inventors: Chen-Meng KUAN, Robert S. LANGER, Chao-Min CHENG
  • Publication number: 20180358474
    Abstract: A field-effect transistor structure having two-dimensional transition metal dichalcogenides includes a substrate, a source/drain structure, a two-dimensional (2D) channel layer, and a gate layer. The source/drain structure is disposed on the substrate and has a surface higher than a surface of the substrate. The 2D channel layer is disposed on the source and the drain and covers the space between the source and the drain. The gate layer is disposed between the source and the drain and covers the 2D channel layer. The field-effect transistor having two-dimensional transition metal dichalcogenides is a planar field-effect transistor or a fin field-effect transistor.
    Type: Application
    Filed: June 13, 2017
    Publication date: December 13, 2018
    Inventors: Kai-Shin Li, Bo-Wei Wu, Min-Cheng Chen, Jia-Min Shieh, Wen-Kuan Yeh
  • Publication number: 20180350673
    Abstract: A method of forming a semiconductor structure includes providing a material layer having a recess formed therein. A first tungsten metal layer is formed at a first temperature and fills the recess. An anneal process at a second temperature is then performed, wherein the second temperature is higher than the first temperature.
    Type: Application
    Filed: March 21, 2018
    Publication date: December 6, 2018
    Inventors: Pin-Hong Chen, Chih-Chieh Tsai, Tzu-Chieh Chen, Kai-Jiun Chang, Chia-Chen Wu, Yi-An Huang, Tsun-Min Cheng, Yi-Wei Chen, Wei-Hsin Liu
  • Patent number: 10142543
    Abstract: A dual-camera devices operates with two cameras turned on in response to an indication detected from a user interface that a change to a zoom factor is to occur and before the change is stabilized. The device selects one of the two cameras according to a stable point of the zoom factor. The device displays images sensed by the selected one of the two cameras when the zoom factor reaches the stable point.
    Type: Grant
    Filed: May 12, 2017
    Date of Patent: November 27, 2018
    Assignee: MediaTek Inc.
    Inventors: Po-Hsun Lin, Cheng-Che Chen, Shih-Min Cheng
  • Publication number: 20180337187
    Abstract: A semiconductor structure for preventing row hammering issue in DRAM cell is provided in the present invention. The structure includes a trench with a gate dielectric, an n-type work function metal layer, a TiN layer conformally formed within, and a buried word line filled in the trench.
    Type: Application
    Filed: July 5, 2018
    Publication date: November 22, 2018
    Inventors: Chih-Chieh Tsai, Pin-Hong Chen, Tzu-Chieh Chen, Tsun-Min Cheng, Yi-Wei Chen, Hsin-Fu Huang, Chi-Mao Hsu, Shih-Fang Tzou
  • Publication number: 20180332223
    Abstract: A dual-camera devices operates with two cameras turned on in response to an indication detected from a user interface that a change to a zoom factor is to occur and before the change is stabilized. The device selects one of the two cameras according to a stable point of the zoom factor. The device displays images sensed by the selected one of the two cameras when the zoom factor reaches the stable point.
    Type: Application
    Filed: May 12, 2017
    Publication date: November 15, 2018
    Inventors: Po-Hsun Lin, Cheng-Che Chen, Shih-Min Cheng
  • Patent number: 10114786
    Abstract: Example embodiments may include a method for configuring an interface that includes determining information for a configuration of an interface of a first device including a plurality of SERDES slices having a plurality of connections to a second device over the interface; and configuring a back channel layer associated with the first device to form a back channel path to carry a message between a transmitter and a receiver of the first device based on the configuration of the plurality of connections to the second device. The transmitter can be in a first SERDES slice of the plurality of SERDES slices and the receiver is in a second SERDES slice of the plurality of SERDES slices.
    Type: Grant
    Filed: October 27, 2017
    Date of Patent: October 30, 2018
    Assignee: CISCO TECHNOLOGY, INC.
    Inventors: Srividhya Nagarajan, Wei-Min Cheng, Lalit Kumar, Deepak S. Mayya
  • Patent number: 10106832
    Abstract: The present invention provides a method for manufacturing a microbial detection device, microbial detection method, microbial detection kit and microbial detection device. The manufacturing method includes the following steps: defining a sampling portion and a reaction portion on a substrate. Fiber materials are disposed in the reaction portion and a surface of the reaction portion which contacts with the fiber materials comprises abundant hydroxyl groups. Reaction reagents are then added into the fiber materials. An acidic solution is applied to treat the fiber materials and the hydroxyl groups in the reaction portion.
    Type: Grant
    Filed: August 12, 2016
    Date of Patent: October 23, 2018
    Assignee: NATIONAL TSING HUA UNIVERSITY
    Inventors: Chen-Meng Kuan, Robert S. Langer, Chao-Min Cheng
  • Publication number: 20180301976
    Abstract: A power supply includes a transformer winding, a switching circuit, a controller and a filter circuit. The transformer winding is configured to provide a first voltage. The switching circuit is coupled to the transformer winding and includes a first and a second switching unit. On the condition that the power supply is operated under a standby mode, the controller controls the first and the second switching units to provide a discharging path between two terminals of the transformer winding. On the condition that the power supply is operated under an operating mode, the controller controls the switching circuit such that the switching circuit provides a second voltage according to the first voltage. The filter circuit is coupled to the switching circuit and configured to filter the second voltage to provide an output voltage.
    Type: Application
    Filed: November 1, 2017
    Publication date: October 18, 2018
    Inventors: Te-Chih PENG, Wei-Chih HUNG, Min-Cheng CHIANG
  • Publication number: 20180301458
    Abstract: The present invention provides a storage node contact structure of a memory device comprising a substrate having a dielectric layer comprising a recess, a first tungsten metal layer, and an adhesive layer on the first tungsten metal layer and a second tungsten metal layer on the adhesive layer, wherein the second tungsten metal layer is formed by a physical vapor deposition (PVD).
    Type: Application
    Filed: March 15, 2018
    Publication date: October 18, 2018
    Inventors: Pin-Hong Chen, Tsun-Min Cheng, Chih-Chieh Tsai, Tzu-Chieh Chen, Kai-Jiun Chang, Chia-Chen Wu, Yi-An Huang, Yi-Wei Chen, Hsin-Fu Huang, Chi-Mao Hsu, Li-Wei Feng, Ying-Chiao Wang, Chung-Yen Feng
  • Publication number: 20180291181
    Abstract: Polar silane linkers are provided that attach to resins to form silane-functionalized resins. The functionalized resins can be bound to hydroxyl groups on the surface of silica particles to improve the dispersibility of the silica particles in rubber mixtures. Further disclosed are synthetic routes to provide the silane-functionalized resins, as well as various uses and end products that benefit from the unexpected properties of the silane-functionalized resins. Silane-functionalized resins impart remarkable properties on various rubber compositions, such as tires, belts, hoses, brakes, and the like. Automobile tires incorporating the silane-functionalized resins are shown to possess excellent results in balancing the properties of rolling resistance, tire wear, and wet braking performance.
    Type: Application
    Filed: April 10, 2018
    Publication date: October 11, 2018
    Inventors: Emily Baird Anderson, John Dayton Baker, JR., Terri Roxanne Carvagno, Judicael Jacques Chapelet, Wei Min Cheng, Liu Deng, Jacobus Gillis De Hullu, Sebastian Finger, Hubert Hirschlag, Christopher Lee Lester, Wentao Li, Mutombo Joseph Muvundamina, Mark Stanley Pavlin, Fabian Peters, Carla Recker, Christopher Thomas Scilla
  • Publication number: 20180291124
    Abstract: Polar silane linkers are provided that attach to resins to form silane-functionalized resins. The functionalized resins can be bound to hydroxyl groups on the surface of silica particles to improve the dispersibility of the silica particles in rubber mixtures. Further disclosed are synthetic routes to provide the silane-functionalized resins, as well as various uses and end products that benefit from the unexpected properties of the silane-functionalized resins. Silane-functionalized resins impart remarkable properties on various rubber compositions, such as tires, belts, hoses, brakes, and the like. Automobile tires incorporating the silane-functionalized resins are shown to possess excellent results in balancing the properties of rolling resistance, tire wear, and wet braking performance.
    Type: Application
    Filed: April 10, 2018
    Publication date: October 11, 2018
    Inventors: Emily Baird Anderson, John Dayton Baker, JR., Terri Roxanne Carvagno, Judicael Jacques Chapelet, Wei Min Cheng, Liu Deng, Jacobus Gillis De Hullu, Sebastian Finger, Hubert Hirschlag, Christopher Lee Lester, Wentao Li, Mutombo Joseph Muvundamina, Mark Stanley Pavlin, Fabian Peters, Carla Recker, Christopher Thomas Scilla
  • Publication number: 20180291125
    Abstract: Polar silane linkers are provided that attach to resins to form silane-functionalized resins. The functionalized resins can be bound to hydroxyl groups on the surface of silica particles to improve the dispersibility of the silica particles in rubber mixtures. Further disclosed are synthetic routes to provide the silane-functionalized resins, as well as various uses and end products that benefit from the unexpected properties of the silane-functionalized resins. Silane-functionalized resins impart remarkable properties on various rubber compositions, such as tires, belts, hoses, brakes, and the like. Automobile tires incorporating the silane-functionalized resins are shown to possess excellent results in balancing the properties of rolling resistance, tire wear, and wet braking performance.
    Type: Application
    Filed: April 10, 2018
    Publication date: October 11, 2018
    Inventors: Emily Baird Anderson, John Dayton Baker, JR., Terri Roxanne Carvagno, Judicael Jacques Chapelet, Wei Min Cheng, Liu Deng, Jacobus Gillis De Hullu, Sebastian Finger, Hubert Hirschlag, Christopher Lee Lester, Wentao Li, Mutombo Joseph Muvundamina, Mark Stanley Pavlin, Fabian Peters, Carla Recker, Christopher Thomas Scilla