Abstract: The present disclosure provides a method for forming a light-emitting apparatus, comprising providing a first board having a plurality of first metal contacts, providing a substrate, forming a plurality of light-emitting stacks and trenches on the substrate, wherein the light-emitting stacks are apart from each other by the plurality of the trenches, bonding the light-emitting stacks to the first board, forming an encapsulating material commonly on the plurality of the light-emitting stacks, and cutting the first board and the encapsulating material to form a plurality of chip-scale LED units.

Abstract: An optoelectronic element includes an optoelectronic unit having a first top surface, a first bottom surface opposite to the first top surface, and a lateral surface between the first top surface and the first bottom surface; a first transparent structure covering the lateral surface and exposing the first top surface of the optoelectronic unit; a first insulating layer on the first top surface and the first transparent structure; a second insulating layer on the first insulating layer; a first opening through the first insulating layer and the second insulating layer; and a first conductive layer on the second insulating layer and electrically connecting to the optoelectronic unit via the first opening.

Abstract: The present application provides a multi-dimensional light-emitting device electrically connected to a power supply system. The multi-dimensional light-emitting device comprises a substrate, a blue light-emitting diode array and one or more phosphor layers. The blue light-emitting diode array, disposed on the substrate, comprises a plurality of blue light-emitting diode chips which are electrically connected. The multi-dimensional light-emitting device comprises a central area and a plurality of peripheral areas, which are arranged around the central area. The phosphor layer covers the central area. When the power supply system provides a high voltage, the central area and the peripheral areas of the multi-dimensional light-emitting device provide a first light and a plurality of second lights, respectively. The first light and the second lights are blended into a mixed light.

Abstract: A method of making an optoelectronic system in accordance with the present disclosure is disclosed. The method includes providing a temporary substrate; providing un-packaged optoelectronic elements having sidewalls, top surfaces, and bottom surfaces, at least one of the unpackaged optoelectronic elements having an electrode provided on a side of the bottom surfaces; attaching the bottom surfaces to the temporary substrate such that a trench is formed between two of the un-packaged optoelectronic elements; providing an adhesive material to fully fill the trench and cover the un-packaged optoelectronic elements such that the sidewalls and top surfaces of the un-packaged optoelectronic elements are fully enclosed by the adhesive material; providing a transparent substrate on the adhesive material; and removing the temporary substrate without removing all the adhesive material covering the optoelectronic elements.

Abstract: This application discloses a light-emitting device with narrow dominant wavelength distribution and a method of making the same. The light-emitting device with narrow dominant wavelength distribution at least includes a substrate, a plurality of light-emitting stacked layers on the substrate, and a plurality of wavelength transforming layers on the light-emitting stacked layers, wherein the light-emitting stacked layer emits a first light with a first dominant wavelength variation; the wavelength transforming layer absorbs the first light and converts the first light into the second light with a second dominant wavelength variation; and the first dominant wavelength variation is larger than the second dominant wavelength variation.

Abstract: An optoelectronic semiconductor device includes a conductive layer; a plurality of electrical connectors extending into the conductive layer; a semiconductor system, formed on the conductive layer, electrically connected to the plurality of electrical connectors and having a side surface; an insulation material directly covering the side surface; and an electrode arranged at a position not corresponding to the plurality of electrical connectors.

Abstract: A semiconductor light-emitting device includes a light-impervious substrate, a bonding structure, a semiconductor light-emitting stack, and a fluorescent material structure overlaying the semiconductor light-emitting stack. The semiconductor light-emitting stack is separated from a growth substrate and bonded to the light-impervious substrate via the bonding structure. A method for producing the semiconductor light-emitting device includes separating a semiconductor light-emitting stack from a growth substrate, bonding the semiconductor light-emitting stack to a light-impervious substrate, and forming a fluorescent material structure over the semiconductor light-emitting stack.

Abstract: A light-emitting device having a corner includes a light-emitting stacked layer having a first conductivity type semiconductor layer, a light-emitting layer formed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer formed on the light-emitting layer. A transparent conductive oxide layer is formed on the second conductivity type semiconductor layer. The upper surface of the transparent conductive oxide layer is textured. A first electrode is formed on the upper surface of the transparent conductive oxide layer. A second electrode is formed on the first conductivity type semiconductor layer. A planarization layer is formed on the transparent conductive oxide layer and the first conductivity type semiconductor layer, and a reflective layer is formed on the upper surface of the planarization layer. The projection of the edge of the reflective layer is not overlapped with the edge of the first electrode or the second electrode.

Abstract: A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.

Abstract: A light-emitting device includes a carrier; a first light-emitting element formed on a first portion of the carrier, including: a first MQW structure configured to emit a first light with a first dominant wavelength; a second MQW structure configured to emit a second light with a second dominant wavelength on the first MQW structure; wherein the first MQW structure and the second MQW structure both comprise InxGa1-xP or InxGa1-xAs, wherein 0<x<1; and a second light-emitting element, formed on a second portion on of the carrier, including a light-emitting stacked layer configured to emit a third light with a third dominant wavelength, wherein the third light is blue, wherein a difference between the first dominant wavelength and the second dominant wavelength is 5 nm to 30 nm.

Abstract: A light-emitting device comprising: a light-emitting stacked layer having a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer; a transparent conductive oxide layer formed on the second conductivity type semiconductor layer wherein the transparent conductive oxide layer having a first portion and a second portion and the upper surface of the transparent conductive oxide layer is a textured surface; a first electrode formed on the second portion of the transparent conductive oxide layer, and a second electrode formed on the first conductivity type semiconductor layer; a planarization layer formed on the first portion of the transparent conductive oxide layer, and the second electrode; and a reflective layer formed on the planarization layer that is devoid of the first electrode and the second electrode.

Abstract: A light-emitting device comprises: a light-emitting stack having an upper side, a first edge having an end point, and a second edge opposite to the first edge; a first bonding region arranged on the upper side, near the first edge, and far from the end point; a second bonding region separated from to the first bonding region by a first distance and being far from the end point; a third bonding region arranged on the upper side; a fourth bonding region separated from the third bonding region by a second distance longer than the first distance; a first electrode connected to the first bonding region; a second electrode connected to the second bonding region; a third electrode connected to the third bonding region; a fourth electrode connected to the fourth bonding region; and a fifth electrode connected to the first bonding region and pointing to the fourth bonding region.

Abstract: A light-emitting device includes: a substrate including an upper surface, wherein the upper surface includes an ion implantation region; a semiconductor layer formed on the upper surface; a light-emitting stack formed on the semiconductor layer; and a plurality of scattering cavities formed between the semiconductor layer and the upper surface in accordance with the ion implantation region.

Abstract: A light-emitting device, comprising: a substrate comprising an upper surface; an ion implantation region in the substrate; a semiconductor layer formed on the upper surface; a light-emitting stack formed on the semiconductor layer; and multiple cavities formed between the semiconductor layer and the upper surface in accordance with the ion implantation region.

Abstract: A light-emitting device includes a plurality of physically separated light-emitting units formed on a single substrate: a contact layer formed on a first side of the light-emitting units ; a first electrode formed on a second side of the light-emitting units: a conductive post formed between the first electrode and the contact layer; an electrical connection structure electrically connecting a first one of the light-emitting units with another a second one of the light-emitting units; a reflective layer formed between the first one of light-emitting units and the first electrode; a first conductive layer comprising a plurality of contacts formed between the first one of the light-emitting units and the reflective layer; and a second conductive layer formed between the reflective layer and the first conductive layer.

Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprises: a first electrode part; a second electrode part; a third electrode part, spaced apart from the first electrode part and the second electrode part; and a light-emitting unit partially covering the first electrode part and the second electrode part and fully covering the second electrode part, the light-emitting unit having a conductive structure contacting the second electrode part.

Abstract: An integrated lighting apparatus comprises a first control device including a semiconductor substrate, an integrated circuit block formed above a first portion of the semiconductor substrate, and a plurality of power pads formed above the integrated circuit block; a first light emitting device formed above a second portion of the semiconductor substrate; and a through plug passing through the semiconductor substrate for electrically connecting the first control device and the first light emitting device.

Abstract: A light-mixing type light-emitting apparatus comprises a plurality of light-emitting diodes (LEDs) formed on a transparent carrier, wherein each of the LEDs with a transparent substrate emits light of a distinct color when driven, and the light beams generated from the LEDs are mixed to form a specific color. The transparent carrier setting forth in the present invention provides a mixing zone underlying the plurality of LEDs for the light beams to mix uniformly so as to improve the light-mixing efficiency of the light-emitting apparatus and shorten the mixing distance.

Abstract: A light-emitting device having a light-emitting stacked layer with a first conductivity type semiconductor layer is provided. A light-emitting layer is formed on the first conductivity type semiconductor layer. A second conductivity type semiconductor layer is formed on the light-emitting layer. The upper surface of the second conductivity type semiconductor layer is a textured surface. A planarization layer is formed on a first part of the second conductivity type semiconductor layer. A transparent conductive oxide layer is formed on the planarization layer and a second part of the second conductivity type semiconductor layer, including a first portion on the planarization layer and a second portion having a first plurality of cavities on the second conductivity type semiconductor layer. An electrode is formed on the first portion of the transparent conductive oxide layer, and a reflective metal layer is formed between the transparent conductive oxide layer and the electrode.

Abstract: This disclosure relates to a light-emitting apparatus comprising a submount, a chip carrier formed on the submount, a light-emitting chip formed on the chip carrier, a reflecting cup formed on the submount and enclosing the light-emitting chip and the chip carrier, and a transparent encapsulating material for encapsulating the light-emitting chip.