Patents by Inventor Min-Hsun Hsieh

Min-Hsun Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8299483
    Abstract: A light-emitting semiconductor apparatus includes a light-emitting structure, a reflective structure, and a carrier. The light-emitting structure includes a first type semiconductor layer, a second type semiconductor layer, and a light-emitting layer positioned between the first type semiconductor layer and the second type semiconductor layer. The reflective structure has a first transparent conductive layer, a first patterned reflective layer, a second transparent conductive layer, and a second patterned reflective layer. The first patterned reflective layer is disposed between the first transparent conductive layer and the second transparent conductive layer, and has an opening for physically connecting the first transparent conductive layer and the second transparent conductive layer. The second transparent conductive layer is disposed between the first patterned reflective layer and the second patterned reflective layer.
    Type: Grant
    Filed: January 5, 2010
    Date of Patent: October 30, 2012
    Assignee: Epistar Corporation
    Inventors: Chih-Chiang Lu, Wei-Chih Peng, Chien-Yuan Wang, Wei-Yo Chen, Shiau-Huei San, Min-Hsun Hsieh
  • Publication number: 20120269520
    Abstract: Lighting apparatuses and LED modules capable of both illumination and data transmission are disclosed. An exemplifying lighting apparatus has a LED module and a modulator. The LED module comprises a plurality of LED cells connected as a LED chain having two conductive pads. The light emitted from the LED module is visible. The modulator provides driving current to the LED module to transmit data.
    Type: Application
    Filed: April 19, 2011
    Publication date: October 25, 2012
    Inventors: Steve M. Hong, Min-Hsun Hsieh
  • Publication number: 20120261695
    Abstract: A light-emitting device includes a first electrode; a light-emitting stacked layer on the first electrode; a first contact layer on the light-emitting stacked layer, wherein the first contact layer includes a first contact link and a plurality of first contact lines connected to the first contact link; a first conductive post in the light-emitting stacked layer and electrically connecting the first electrode and the first contact layer; and a passivation layer between the first conductive post and the light-emitting stacked layer.
    Type: Application
    Filed: November 30, 2011
    Publication date: October 18, 2012
    Inventors: Yi-Ming Chen, Min-Hsun Hsieh, Chia-Liang Hsu
  • Patent number: 8278672
    Abstract: A semiconductor light-emitting device is disclosed. The semiconductor light-emitting device comprises a multilayer epitaxial structure disposed on a semiconductor substrate. The semiconductor substrate has a predetermined lattice direction perpendicular to an upper surface thereof, wherein the predetermined lattice direction is angled toward [0 11] or [01 1] from [100], or toward [011] or [0 11] from [ 100] so that the upper surface of the semiconductor substrate comprises at least two lattice planes with different lattice plane directions. The multilayer epitaxial structure has a roughened upper surface perpendicular to the predetermined lattice direction. The invention also discloses a method for fabricating a semiconductor light-emitting device.
    Type: Grant
    Filed: March 26, 2007
    Date of Patent: October 2, 2012
    Assignee: Epistar Corporation
    Inventors: Ya-Ju Lee, Ta-Cheng Hsu, Ming-Ta Chin, Yen-Wen Chen, Wu-Tsung Lo, Chung-Yuan Li, Min-Hsun Hsieh
  • Patent number: 8274156
    Abstract: An optoelectronic semiconductor device includes a substrate, a semiconductor system having an active layer formed on the substrate and an electrode structure formed on the semiconductor system, wherein the layout of the electrode structure having at least a first conductivity type contact zone or a first conductivity type bonding pad, a second conductivity type bonding pad, a first conductivity type extension electrode, and a second conductivity type extension electrode wherein the first conductivity type extension electrode and the second conductivity type extension electrode have three-dimensional crossover, and partial of the first conductivity type extension electrode and the first conductivity type contact zone or the first conductivity type bonding pad are on the opposite sides of the active layer.
    Type: Grant
    Filed: November 25, 2009
    Date of Patent: September 25, 2012
    Assignee: Epistar Corporation
    Inventors: Wei-Yo Chen, Yen-Wen Chen, Chien-Yuan Wang, Min-Hsun Hsieh, Tzer-Perng Chen
  • Publication number: 20120231560
    Abstract: A semiconductor light-emitting device having a thinned structure comprises a thinned structure formed between a semiconductor light-emitting structure and a carrier. The manufacturing method comprises the steps of forming a semiconductor light-emitting structure above a substrate; attaching the semiconductor light-emitting structure to a support; thinning the substrate to form a thinned structure; forming or attaching a carrier to the thinned substrate; and removing the support.
    Type: Application
    Filed: May 23, 2012
    Publication date: September 13, 2012
    Inventors: Min-Hsun Hsieh, Chih-Chiang Lu, Chien-Yuan Wang, Yen-Wen Chen, Jui-Hung Yeh, Shih-Chin Hung, Yu-Wei Tu, Chun-Yi Wu, Wei-Chih Peng
  • Patent number: 8263998
    Abstract: A light-emitting device comprising a semiconductor light-emitting stack, comprising a light emitting area; an electrode formed on the semiconductor light-emitting stack, wherein the electrode comprises a current injected portion and an extension portion; a current blocking structure formed between the current injected portion and the semiconductor light-emitting stack, and formed between a first part of the extension portion and the semiconductor light-emitting stack; and an electrical contact structure formed between a second part of the extension portion and the semiconductor light-emitting stack.
    Type: Grant
    Filed: January 19, 2011
    Date of Patent: September 11, 2012
    Assignee: Epistar Corporation
    Inventors: Chien-Fu Huang, Min-Hsun Hsieh, Chih-Chiang Lu, Chia-Liang Hsu, Shih-I Chen
  • Publication number: 20120211794
    Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprises: a light-emitting stack having an upper surface and a lower surface; a pad, arranged on the upper surface, comprising: a first bonding region; and a second bonding region physically connected to the first bonding region through a connecting region having a connecting width; a first electrode connected to the first bonding region; a second electrode connected to the second bonding region; and a third electrode extending from the pad and arranged between the first electrode and the second electrode. At least one of the first electrode, the second electrode, and the third electrode has a width smaller than the connecting width.
    Type: Application
    Filed: April 30, 2012
    Publication date: August 23, 2012
    Applicant: EPISTAR CORPORATION
    Inventors: Chien-Fu SHEN, Cheng-Ta Kuo, Wei-Shou Chen, Tsung-Hsien Liu, Yi-Wen Ku, Min-Hsun Hsieh
  • Publication number: 20120202303
    Abstract: The disclosure provides a customized manufacturing method for an optoelectrical device. The customized manufacturing method comprises the steps of providing a manufacturing flow including a front-end flow, a customized module subsequent to the front-end flow, and a pause step between the front-end flow and the customized module, processing a predetermined amount of semi-manufactured products queued at the pause step, tuning the customized module in accordance with a customer's request, and processing the semi-manufactured products by the tuned customized module to fulfill the customer's request.
    Type: Application
    Filed: April 23, 2012
    Publication date: August 9, 2012
    Applicant: EPISTAR CORPORATION
    Inventor: Min-Hsun Hsieh
  • Patent number: 8237182
    Abstract: Organic adhesive light-emitting device with ohmic metal bulge. The organic adhesive light-emitting device includes a conductive substrate, a light-emitting stack layer, a metal layer formed over the conductive substrate, a reflective layer formed over the light-emitting stack layer, and an organic adhesive layer having an ohmic metal bulge and an adhesive material around the ohmic metal bulge. The adhesive material bonds the metal layer and the reflective layer together, while the ohmic metal bulge forms ohmic contacts with the metal layer and the reflective layer. The configuration can simplify a light-emitting diode.
    Type: Grant
    Filed: January 18, 2005
    Date of Patent: August 7, 2012
    Assignee: Epistar Corporation
    Inventors: Min-Hsun Hsieh, Wen-Huang Liu, Tzu-Feng Tseng, Ya-Lan Yang
  • Patent number: 8232563
    Abstract: A light-emitting device includes an LED chip emitting a primary light, and a phosphor deposited on the LED chip for absorbing the primary light to excite a secondary light, wherein the wavelength of the primary light is shorter than 430 nm and the LED chip is driven by current density greater than 200 mA/cm2. The wavelength-converting light-emitting device has a high light efficiency and a stable color temperature, wherein LED chip is diced from a wafer made by means of a phosphor-on-chip process.
    Type: Grant
    Filed: June 14, 2007
    Date of Patent: July 31, 2012
    Assignee: Epistar Corporation
    Inventors: Chien-Yuan Wang, Min-Hsun Hsieh, Yu-Jiun Shen
  • Patent number: 8210699
    Abstract: An embodiment of the invention discloses a wavelength converting system. The wavelength converting system comprises: a wavelength converter having a first area and a second area; a first light source disposed under the first area and inducing a first mixed light being visible above the first area; a second light source disposed under the second area and inducing a second mixed light being visible above the second area; and a carrier supporting the first light source and the second light source. The first light source and the second light source have a dominant wavelength difference of 1 nm˜20 nm, and the first mixed light and the second mixed light have a color temperature difference less than 100K.
    Type: Grant
    Filed: August 1, 2011
    Date of Patent: July 3, 2012
    Assignee: Epistar Corporation
    Inventors: Chien-Yuan Wang, Min-Hsun Hsieh, Chih-Chiang Lu
  • Patent number: 8207539
    Abstract: A semiconductor light-emitting device having a thinned structure comprises a thinned structure formed between a semiconductor light-emitting structure and a carrier. The manufacturing method comprises the steps of forming a semiconductor light-emitting structure above a substrate; attaching the semiconductor light-emitting structure to a support; thinning the substrate to form a thinned structure; forming or attaching a carrier to the thinned substrate; and removing the support.
    Type: Grant
    Filed: June 9, 2009
    Date of Patent: June 26, 2012
    Assignee: Epistar Corporation
    Inventors: Min-Hsun Hsieh, Chih-Chiang Lu, Chien-Yuan Wang, Yen-Wen Chen, Jui-Hung Yeh, Shih-Chin Hung, Yu-Wei Tu, Chun-Yi Wu, Wei-Chih Peng
  • Patent number: 8207551
    Abstract: The present invention discloses a semiconductor light-emitting device including a semiconductor light-emitting element, a first attaching layer and a wavelength conversion structure. The primary light emitted from the semiconductor light-emitting element enters the wavelength conversion structure to generate a converted light, whose wavelength is different form that of the primary light. In addition, the present invention also provides the method for forming the same.
    Type: Grant
    Filed: February 18, 2011
    Date of Patent: June 26, 2012
    Assignee: Epistar Corporation
    Inventors: Min-Hsun Hsieh, Chien-Yuan Wang
  • Publication number: 20120132944
    Abstract: Disclosed is a light-emitting device comprising: a carrier; a light-emitting element disposed on the carrier; a first light guide layer covering the light-emitting element, and disposed on the carrier; a wavelength conversion and light guide layer covering the first light guide layer and the light-emitting element, and disposed on the carrier; and a low refractive index layer disposed between the first light guide layer and the wavelength conversion and light guide layer; wherein the first light guide layer comprises a gradient refractive index, the wavelength conversion and light guide layer comprises a dome shape structure and is used to convert a wavelength of light emitted from the light-emitting element and transmit light, and the low refractive index layer is used to reflect light from the wavelength conversion and light guide layer.
    Type: Application
    Filed: November 29, 2011
    Publication date: May 31, 2012
    Applicant: Epistar Corporation
    Inventors: Min-Hsun Hsieh, Chien-Yuan Wang, Tsung-Xian Lee, Chih-Ming Wang, Ming-Chi Hsu, Han-Min Wu
  • Patent number: 8188505
    Abstract: A light-emitting device comprises a substrate, an epitaxial structure formed on the substrate including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer. A trench is formed in the epitaxial structure to expose a part of side surface of the epitaxial structure and a part of surface of the first semiconductor layer, so that a first conductive structure is formed on the part of surface of the first semiconductor layer in the trench, and a second conductive structure is formed on the second semiconductor layer. The first conductive structure includes a first electrode and a first pad electrically contacted with each other. The second conductive structure includes a second electrode and a second pad electrically contacted with each other. Furthermore, the area of at least one of the first pad and the second pad is between 1.5×104?m2 and 6.2×104 ?m2.
    Type: Grant
    Filed: November 21, 2008
    Date of Patent: May 29, 2012
    Assignee: Epistar Corporation
    Inventors: Chien-Fu Shen, Cheng-Ta Kuo, Wei-Shou Chen, Tsung-Hsien Liu, Yi-Wen Ku, Min-Hsun Hsieh
  • Patent number: 8183584
    Abstract: A light-emitting device and manufacturing method thereof are disclosed. The light-emitting device includes a substrate, a semiconductor light-emitting structure, a filter layer, and a fluorescent conversion layer. The method comprises forming a semiconductor light-emitting structure over a substrate, forming a filter layer over the semiconductor light-emitting structure, and forming a fluorescent conversion layer over the filter layer.
    Type: Grant
    Filed: May 5, 2011
    Date of Patent: May 22, 2012
    Assignee: Epistar Corporation
    Inventors: Chien-Yuan Wang, Chih-Chiang Lu, Min-Hsun Hsieh
  • Publication number: 20120104455
    Abstract: An optoelectronic device includes a substrate and a first transition stack formed on the substrate including at least a first transition layer formed on the substrate and having at least one hollow component formed inside the first transition layer, and a second transition layer wherein the second transition layer is an unintentional doped layer or an undoped layer formed on the first transition layer.
    Type: Application
    Filed: September 2, 2011
    Publication date: May 3, 2012
    Inventors: Wei-Chih PENG, Min-Hsun Hsieh, Ming-Chi Hsu, Wei-Yu Yen, Chun-Kai Wang, Yen-Chih Chen, Schang-Jing Hon, Hsin-Ying Wang, Chien-Kai Chung
  • Patent number: 8165708
    Abstract: The disclosure provides a customized manufacturing method for an optoelectrical device. The customized manufacturing method comprises the steps of providing a manufacturing flow including a front-end flow, a customized module subsequent to the front-end flow, and a pause step between the front-end flow and the customized module, processing a predetermined amount of semi-manufactured products queued at the pause step, tuning the customized module in accordance with a customer's request, and processing the semi-manufactured products by the tuned customized module to fulfill the customer's request.
    Type: Grant
    Filed: February 25, 2009
    Date of Patent: April 24, 2012
    Assignee: Epistar Corporation
    Inventor: Min-Hsun Hsieh
  • Patent number: 8148196
    Abstract: This invention discloses a light emitting semiconductor device including a light-emitting structure and an external optical element. The optical element couples to the light-emitting structure circumferentially. In addition, the refractive index of the external optical element is greater than or about the same as that of a transparent substrate of the light-emitting structure, or in-between that of the transparent substrate and the encapsulant material.
    Type: Grant
    Filed: January 4, 2011
    Date of Patent: April 3, 2012
    Assignee: Epistar Corporation
    Inventor: Min-Hsun Hsieh