Patents by Inventor Min-Hsun Hsieh

Min-Hsun Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8692270
    Abstract: A light-emitting apparatus includes a submount, a chip carrier formed on the submount, and a light-emitting chip formed on the chip carrier. The light-emitting apparatus also includes a reflecting cup formed on the submount and enclosing the light-emitting chip and the chip carrier, and a transparent encapsulating material for encapsulating the light-emitting chip.
    Type: Grant
    Filed: July 23, 2007
    Date of Patent: April 8, 2014
    Assignee: Epistar Corporation
    Inventors: Min-Hsun Hsieh, Ta-Cheng Hsu, ML Tsai, Chih-Chiang Lu, Chien-Yuan Wang, Yen-Wen Chen, Ya-Ju Lee
  • Publication number: 20140093991
    Abstract: A method of manufacturing a light-emitting device comprising the steps of cutting a substrate by a laser beam to form a cavity in the substrate and generate a by-product directly on the substrate by the cutting, and removing the by-product by a chemical solution containing an acid under a predetermined cleaning temperature.
    Type: Application
    Filed: December 4, 2013
    Publication date: April 3, 2014
    Applicant: Epistar Corporation
    Inventors: Chien-Kai CHUNG, Ya Lan YANG, Ting-Chia KO, Tsun-Kai KO, Jung-Min HWANG, Schang-Jing HON, De-Shan KUO, Chien-Fu SHEN, Ta-Cheng HSU, Min-Hsun HSIEH
  • Publication number: 20140061708
    Abstract: A light-emitting device includes a first electrode; a light-emitting stacked layer on the first electrode; a first contact layer on the light-emitting stacked layer, wherein the first contact layer includes a first contact link and a plurality of first contact lines connected to the first contact link; a first conductive post in the light-emitting stacked layer and electrically connecting the first electrode and the first contact layer; and a passivation layer between the first conductive post and the light-emitting stacked layer.
    Type: Application
    Filed: November 5, 2013
    Publication date: March 6, 2014
    Applicant: EPISTAR CORPORATION
    Inventors: Yi-Ming CHEN, Min-Hsun HSIEH, Chia-Liang HSU
  • Patent number: 8657467
    Abstract: An illumination apparatus is disclosed in the invention. The illumination apparatus includes a cavity with a diffusion surface, a light source, a light-spreading device, and at least one optically-conditioning surface with a wave-like array formed thereon. The light-spreading device and the optically-conditioning surface spread the light generated by the light source. The light-spreading device includes a wing-shaped protrusion part, a light incident surface, a recess located away from the light incident surface, and an optically-conditioning surface including a wave-like array, wherein the wave-like array has a wavefront direction.
    Type: Grant
    Filed: January 15, 2008
    Date of Patent: February 25, 2014
    Assignee: Epistar Corporation
    Inventors: Min-Hsun Hsieh, Chou-Chih Yin, Chun-Chang Chen, Jen-Shui Wang, Chia-Fen Tsai, Yi-Ming Chen
  • Publication number: 20140048825
    Abstract: This disclosure discloses a light-emitting display module display. The light-emitting display module comprises: a board; and a plurality of light-emitting diode modules arranged in an array configuration on the board; wherein one of the light-emitting diode modules comprises a plurality of encapsulated light-emitting units spaced apart from each other; and one of the encapsulated light-emitting units comprises a plurality of optoelectronic units, a first supporting, and a fence; and wherein the plurality of optoelectronic units are covered by the first supporting structure, and the fence surrounds the first supporting structure and the plurality of optoelectronic units.
    Type: Application
    Filed: March 18, 2013
    Publication date: February 20, 2014
    Applicant: EPISTAR CORPORATION
    Inventors: Min Hsun Hsieh, Hsin-Mao Liu
  • Publication number: 20140048833
    Abstract: This application discloses a light-emitting device with narrow dominant wavelength distribution and a method of making the same. The light-emitting device with narrow dominant wavelength distribution at least includes a substrate, a plurality of light-emitting stacked layers on the substrate, and a plurality of wavelength transforming layers on the light-emitting stacked layers, wherein the light-emitting stacked layer emits a first light with a first dominant wavelength variation; the wavelength transforming layer absorbs the first light and converts the first light into the second light with a second dominant wavelength variation; and the first dominant wavelength variation is larger than the second dominant wavelength variation.
    Type: Application
    Filed: October 24, 2013
    Publication date: February 20, 2014
    Applicant: Epistar Corporation
    Inventors: Chih-Chiang LU, Shu-Ting HSU, Yen-Wen CHEN, Chien-Yuan WANG, Ru-Shi LIU, Min-Hsun HSIEH
  • Publication number: 20140048824
    Abstract: A light-emitting device of an embodiment of the present application comprises optoelectronic units; a transparent structure having cavities configured to accommodate at least one of the optoelectronic units; and a conductive element connecting at least two of the optoelectronic units.
    Type: Application
    Filed: January 16, 2013
    Publication date: February 20, 2014
    Applicant: EPISTAR CORPORATION
    Inventor: Min Hsun Hsieh
  • Publication number: 20140034988
    Abstract: Disclosed is a light-emitting device comprising: a carrier; a light-emitting element disposed on the carrier; a first light guide layer covering the light-emitting element; a second light guide layer covering the first light guide layer; a low refractive index layer between the first light guide layer and the second light guide layer to reflect the light from the second light guide layer; and a wavelength conversion layer covering the second light guide layer; wherein the low refractive index layer has a refractive index smaller than one of the refractive indices of first light guide layer and the second light guide layer.
    Type: Application
    Filed: October 7, 2013
    Publication date: February 6, 2014
    Applicant: Epistar Corporation
    Inventors: Min-Hsun HSIEH, Chien-Yuan WANG, Tsung-Xian LEE, Chih-Ming WANG, Ming-Chi HSU, Han-Min WU
  • Patent number: 8643054
    Abstract: A light-emitting device includes a semiconductor light-emitting stack; a current injected portion formed on the semiconductor light-emitting stack; an extension portion having a first branch radiating from the current injected portion and a second branch extending from the first branch; an electrical contact structure between the second branch and the semiconductor light-emitting stack and having a first width; and a current blocking structure located right beneath the electrical contact structure and having a second width larger than the first width.
    Type: Grant
    Filed: August 27, 2013
    Date of Patent: February 4, 2014
    Assignee: Epistar Corporation
    Inventors: Chien-Fu Huang, Min-Hsun Hsieh, Chih-Chiang Lu, Chia-Liang Hsu, Shih-I Chen
  • Patent number: 8623682
    Abstract: A method of manufacturing a light-emitting device comprising the steps of cutting a substrate by a laser beam to form a cavity in the substrate and generate a by-product directly on the substrate by the cutting, and removing the by-product by a chemical solution containing an acid under a predetermined cleaning temperature.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: January 7, 2014
    Assignee: Epistar Corporation
    Inventors: Chien-Kai Chung, Ta-Cheng Hsu, Jung-Min Hwang, Min-Hsun Hsieh, Ya-Lan Yang, De-Shan Kuo, Tsun-Kai Ko, Chien-Fu Shen, Ting-Chia Ko, Schang-Jing Hon
  • Publication number: 20130341667
    Abstract: A light-emitting device includes a semiconductor light-emitting stack; a current injected portion formed on the semiconductor light-emitting stack; an extension portion having a first branch radiating from the current injected portion and a second branch extending from the first branch; an electrical contact structure between the second branch and the semiconductor light-emitting stack and having a first width; and a current blocking structure located right beneath the electrical contact structure and having a second width larger than the first width.
    Type: Application
    Filed: August 27, 2013
    Publication date: December 26, 2013
    Applicant: EPISTAR CORPORATION
    Inventors: Chien-Fu HUANG, Min-Hsun HSIEH, Chih-Chiang LU, Chia-Liang HSU, Shih-I CHEN
  • Publication number: 20130334555
    Abstract: An optoelectronic device comprising: a substrate; and a transition stack formed on the substrate comprising one first transition layer formed on the substrate having a first hollow component formed inside the first transition layer and a second transition layer formed on the first transition layer having a second hollow component formed inside the second transition layer wherein the first hollow component and the second hollow component having a volume respectively, and the volume of the first hollow component is different with the second hollow component and the material of the transition stack comprises at least two element.
    Type: Application
    Filed: August 16, 2013
    Publication date: December 19, 2013
    Inventors: Min-Hsun HSIEH, Ming-Chi HSU, Hung-Chih YANG
  • Patent number: 8602832
    Abstract: A light-emitting device includes a transparent substrate, a transparent adhesive layer on the transparent substrate, a first transparent conductive layer on the transparent adhesive layer, a multi-layer epitaxial structure and a first electrode on the transparent conductive layer, and a second electrode on the multi-layer epitaxial structure. The multi-layer epitaxial structure includes a light-emitting layer. The transparent substrate has a first surface facing the transparent adhesive layer and a second surface opposite to the first surface, wherein the area of the second surface is larger than that of the light-emitting layer, and the area ratio thereof is not less than 1.6.
    Type: Grant
    Filed: March 4, 2010
    Date of Patent: December 10, 2013
    Assignee: Epistar Corporation
    Inventors: Min-Hsun Hsieh, Chih-Chiang Lu, Ching-Pu Tai
  • Publication number: 20130313594
    Abstract: An optoelectronic element includes an optoelectronic unit having a first top surface; a first metal layer on the first top surface; a first transparent structure surrounding the optoelectronic unit and exposing the first top surface; and a first contact layer on the first transparent structure, including a connective part electrically connected with the first metal layer.
    Type: Application
    Filed: May 2, 2013
    Publication date: November 28, 2013
    Applicant: EPISTAR CORPORATION
    Inventors: Cheng-Nan HAN, Tsung-Xian Lee, Min-Hsun Hsieh, Hung-Hsuan Chen, Hsin-Mao Liu, Hsing-Chao Chen, Ching-San Tao, Chih-Peng Ni, Tzer-Perng Chen, Jen-Chau Wu, Masafumi Sano, Chih-Ming Wang
  • Publication number: 20130314001
    Abstract: The present application provides a light-emitting device comprising a first light-emitting diode group; a second light-emitting diode group electrically connected to the first light-emitting diode group in parallel; and a temperature compensation. element electrically connected to the second light-emitting diode group in series; and a first switch device connected between the second light-emitting diode group and the temperature compensation element.
    Type: Application
    Filed: August 1, 2013
    Publication date: November 28, 2013
    Applicant: EPISTAR CORPORATION
    Inventors: Hsin-Mao LIU, Zong-Xi CHEN, Min-Hsun HSIEH, Chien-Yan WANG
  • Patent number: 8592847
    Abstract: A light-emitting device includes a first electrode; a light-emitting stacked layer on the first electrode; a first contact layer on the light-emitting stacked layer, wherein the first contact layer includes a first contact link and a plurality of first contact lines connected to the first contact link; a first conductive post in the light-emitting stacked layer and electrically connecting the first electrode and the first contact layer; and a passivation layer between the first conductive post and the light-emitting stacked layer.
    Type: Grant
    Filed: November 30, 2011
    Date of Patent: November 26, 2013
    Assignee: Epistar Corporation
    Inventors: Yi-Ming Chen, Min-Hsun Hsieh, Chia-Liang Hsu
  • Patent number: 8581093
    Abstract: An optoelectronical semiconductor device having a bonding structure comprises a first optoelectronical structure, a second optoelectronical structure, and a transparent bonding structure formed in-between.
    Type: Grant
    Filed: February 13, 2008
    Date of Patent: November 12, 2013
    Assignee: Epistar Corporation
    Inventors: Min-Hsun Hsieh, Pai-Hsiang Wang, Ta-Cheng Hsu, Yeung-Sy Su
  • Publication number: 20130292731
    Abstract: A light-emitting device wherein the light-emitting device having a corner, comprising: a light-emitting stacked layer having a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer; a transparent conductive oxide layer formed on the second conductivity type semiconductor layer wherein the upper surface of the transparent conductive oxide layer is a textured surface; a first electrode formed on the upper surface of the transparent conductive oxide layer; a second electrode formed on the first conductivity type semiconductor layer; a planarization layer formed on partial of the transparent conductive oxide layer and the second electrode; and a reflective layer formed on the upper surface of the planarization layer wherein the projection of the edge of the reflective layer is not overlapped with the edge of the first electrode or the second electrode.
    Type: Application
    Filed: July 5, 2013
    Publication date: November 7, 2013
    Inventors: WEI YU CHEN, MIN-HSUN HSIEH
  • Publication number: 20130292643
    Abstract: A light-emitting device comprising: a light-emitting stacked layer having a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer; a transparent conductive oxide layer formed on the second conductivity type semiconductor layer wherein the transparent conductive oxide layer having a first portion and a second portion and the upper surface of the transparent conductive oxide layer is a textured surface; a first electrode formed on the second portion of the transparent conductive oxide layer, and a second electrode formed on the first conductivity type semiconductor layer; a planarization layer formed on the first portion of the transparent conductive oxide layer, and the second electrode; and a reflective layer formed on the planarization layer that is devoid of the first electrode and the second electrode.
    Type: Application
    Filed: July 2, 2013
    Publication date: November 7, 2013
    Inventors: DE-SHAN KUO, CHUN-HSIANG TU, PO-SHUN CHIU, CHUN-TENG KO, MIN-HSUN HSIEH
  • Patent number: 8569083
    Abstract: This application discloses a light-emitting device with narrow dominant wavelength distribution and a method of making the same. The light-emitting device with narrow dominant wavelength distribution at least includes a substrate, a plurality of light-emitting stacked layers on the substrate, and a plurality of wavelength transforming layers on the light-emitting stacked layers, wherein the light-emitting stacked layer emits a first light with a first dominant wavelength variation; the wavelength transforming layer absorbs the first light and converts the first light into the second light with a second dominant wavelength variation; and the first dominant wavelength variation is larger than the second dominant wavelength variation.
    Type: Grant
    Filed: February 24, 2010
    Date of Patent: October 29, 2013
    Assignee: Epistar Corporation
    Inventors: Chih-Chiang Lu, Shu-Ting Hsu, Yen-Wen Chen, Chien-Yuan Wang, Ru-Shi Liu, Min-Hsun Hsieh