Patents by Inventor Min Hyung Cho

Min Hyung Cho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20040125888
    Abstract: There is provided a quadrature modulation transmitter which is capable of solving several problems of the conventional transmitter while performing the same function as the heterodyne transmitter or the digital IF transmitter, in which a circuit structure is simplified and a power consumption is reduced compared with the conventional transmitter.
    Type: Application
    Filed: December 12, 2003
    Publication date: July 1, 2004
    Inventors: Min-Hyung Cho, Seung-Chul Lee, Mun-Yang Park
  • Publication number: 20030137352
    Abstract: A variable gain amplifier (VGA) circuitry for implementing gain as a pseudo exponential function by using the linear area of metal oxide semiconductor field effect transistors (MOSFETs) is provided. The VGA circuitry includes a fixed resistor and a variable resistor, which is connected in serial to the fixed resistor and implemented by combining one or more MOSFETs operating in a linear area with different control voltages to each MOSFET. Although the MOSFET has no exponential characteristics, the VGA circuitry can easily implement a pseudo exponential function with a simple structure. Further, since a complex circuit for generating an exponential function is not necessary, power consumption thereof can be eliminated.
    Type: Application
    Filed: December 24, 2002
    Publication date: July 24, 2003
    Inventors: Yong-sik Youn, Min-hyung Cho, Hye-ju Seo, Jong-kee Kwon, Kyung-soo Kim
  • Patent number: 6437360
    Abstract: Disclosed are flat/vertical type vacuum field transistor (VFT) structures, which adopt a MOSFET-like flat or vertical structure so as to increase the degree of integration and can be operated at low operation voltages at high speeds. The flat type comprises a source and a drain, made of conductors, which stand at a predetermined distance apart on a thin channel insulator with a vacuum channel therebetween; a gate, made of a conductor, which is formed with a width below the source and the drain, the channel insulator functioning to insulate the gate from the source and the drain; and an insulating body, which serves as a base for propping up the channel insulator and the gate.
    Type: Grant
    Filed: November 9, 2000
    Date of Patent: August 20, 2002
    Assignee: Korea Advanced Institute of Science and Technology
    Inventors: Gyu Hyeong Cho, Ji Yeoul Ryoo, Myeoung Wun Hwang, Min Hyung Cho, Young Jin Woo, Young Ki Kim