Patents by Inventor Min Ko

Min Ko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10700133
    Abstract: Disclosed is an organic light emitting diode display apparatus including: a substrate; an organic light emitting diode disposed on the substrate; and an encapsulation layer encapsulating the organic light emitting diode. The encapsulation layer has a structure in which two or more inorganic layers and one or more organic layers are alternately stacked one above another, two adjacent inorganic layers at least partially contact each other, and the organic layers are formed of an encapsulating composition. The encapsulating composition includes a photocurable monomer and a photopolymerization initiator. The photocurable monomer includes a monomer containing no aromatic hydrocarbon group; and a monomer having two or more substituted or unsubstituted phenyl groups represented by Formula 1.
    Type: Grant
    Filed: May 2, 2016
    Date of Patent: June 30, 2020
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Hye Jin Kim, Sung Min Ko, Mi Sun Kim, Seong Ryong Nam, Ji Yeon Lee, Mi Jeong Choi
  • Publication number: 20200199266
    Abstract: The present invention relates to a solid catalyst for propylene polymerization and a method of producing a propylene polymer or copolymer using the solid catalyst for propylene polymerization, and provides a solid catalyst which prepares a dialkoxymagnesium carrier and is formed of a carrier produced through a reaction of the carrier with a metal halide, a titanium halide, an organic electron donor, etc., and a method of producing a propylene polymer or copolymer through copolymerization of propylene-alpha olefin using the solid catalyst, wherein the dialkoxymagnesium carrier has an uniform particle size range of 10 to 100 ?m and a spherical particle shape by adjusting injection amounts, injection numbers, and reaction temperatures of metal magnesium, alcohol and a reaction initiator during a reaction process of metal magnesium and alcohol.
    Type: Application
    Filed: December 19, 2019
    Publication date: June 25, 2020
    Inventors: Young Joo LEE, Eun Il KIM, Hyeong Cheol PARK, Su Min KO
  • Publication number: 20200172641
    Abstract: The present invention relates to a propylene polymerizing solid catalyst for reducing the volatile organic compound (VOC) and a method of producing polypropylene using the propylene polymerizing solid catalyst, the propylene polymerizing solid catalyst including an organic electron donor formed of a combination of a first internal electron donor of titanium, magnesium, halogen and cyclic diester and a second internal electron donor of diether, and has improved hydrogen reactivity of a catalyst compared to a conventional method and has an effect that is capable of producing an eco-friendly polypropylene which has greatly lowered a content of the VOC by using the catalyst.
    Type: Application
    Filed: October 30, 2019
    Publication date: June 4, 2020
    Inventors: Young Joo LEE, Su Min KO, Joon Ryeo PARK, Eun Il KIM
  • Publication number: 20200165167
    Abstract: A tape casting slurry composition for preparing a silicon nitride sintered body is provided. The tape casting slurry composition exhibits a viscosity suitable for tape casting, and thus, can easily control the area and thickness of the prepared green sheet, thereby preparing a large area silicon nitride sintered body having a thickness of a circuit board without post-processing processes such as grinding, and the like. Therefore, according to the present invention, a silicon nitride sintered body can be prepared using low cost raw materials by a simplified process, thereby securing efficiency and economic feasibility of the preparation process.
    Type: Application
    Filed: September 19, 2018
    Publication date: May 28, 2020
    Applicant: LG Chem, Ltd.
    Inventors: Jungyu Kim, Dong Oh Shin, Jung Min Ko
  • Patent number: 10662547
    Abstract: The present invention relates to a silicon-based molten composition for forming a SiC single crystal by a solution method, the composition containing silicon, carbon, and a metal satisfying 0.70?Csisol?1.510 with respect to a solubility parameter (Csisol) defined by the following Equation (1): Csisol=A?B+?1??2??Equation (1) wherein, A is first energy (A) of a first evaluation lattice containing silicon atoms, carbon atoms, and metal atoms, in a silicon crystal lattice containing the metal and the carbon; B is second energy (B) of a second evaluation lattice containing silicon atoms and metal atoms, in a silicon crystal lattice containing the metal; ?1 is ?5.422 as a constant value, and ?2 is ?9.097 as a constant value.
    Type: Grant
    Filed: October 25, 2016
    Date of Patent: May 26, 2020
    Assignee: LG Chem, Ltd.
    Inventors: Chan Yeup Chung, Ho Rim Lee, Jung Min Ko, Dae Sung Kim, Sung Soo Lee, Chang Sun Eun
  • Publication number: 20200120878
    Abstract: A plant cultivation method and light treatment unit for increasing the content of a phytochemical. The plant cultivation method includes: growing a plant by germinating a seed; increasing the content of resveratrol, which is a phytochemical, through UV treatment on the plant; and harvesting the plant. Here, UV treatment is performed by irradiating the plant with UV light emitted from an LED.
    Type: Application
    Filed: October 22, 2019
    Publication date: April 23, 2020
    Applicant: SEOUL VIOSYS CO., LTD.
    Inventors: Sang Min KO, Se Ryung KIM, Jin Won KIM
  • Publication number: 20200111954
    Abstract: A method of manufacturing a variable resistance memory device may include: forming a memory cell including a variable resistance pattern on a substrate; performing a first process to deposit a first protective layer covering the memory cell; and performing a second process to deposit a second protective layer on the first protective layer. The first process and the second process may use the same source material and the same nitrogen reaction material, and a nitrogen content in the first protective layer may be less than a nitrogen content in the second protective layer.
    Type: Application
    Filed: May 20, 2019
    Publication date: April 9, 2020
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: JONGUK KIM, YOUNG-MIN KO, BYONGJU KIM, JAEHO JUNG, DONGSUNG CHOI
  • Publication number: 20200111957
    Abstract: A method of manufacturing a variable resistance memory device includes: forming an array of memory cells on a substrate, each memory cell including a variable resistance structure and a switching element; and forming a sidewall insulating layer covering a sidewall of the switching element. The forming the sidewall insulating layer includes: a preliminary step of supplying a silicon source to an exposed sidewall of the switching element; and a main step of performing a process cycle a plurality of times, the process cycle comprising supplying the silicon source and supplying a reaction gas, A time duration of the supplying the silicon source in the preliminary step is longer than a time duration of the supplying the silicon gas in the process cycle in the main step.
    Type: Application
    Filed: May 17, 2019
    Publication date: April 9, 2020
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: BYONGJU KIM, YOUNG-MIN KO, JONGUK KIM, JAEHO JUNG, DONGSUNG CHOI
  • Publication number: 20200093897
    Abstract: A method for detecting whether glucose metabolism is abnormal comprises: detecting GPx2 gene expression, GPx2 protein expression or the activity of GPx2 protein in a test body, and making comparisons with GPx2 expression amount of a normal individual, when the GPx2 expression of the individual is significantly lower than that of the normal individual, indicating that the carbohydrate metabolism of the individual is in an abnormal state. Applications of GPx2 in the preparation of a medical composition for the treatment and prevention of type II diabetes.
    Type: Application
    Filed: November 14, 2016
    Publication date: March 26, 2020
    Applicant: KAOHSIUNG MEDICAL UNIVERSITY
    Inventors: Ming-Lung YU, Wan-Long CHUANG, Jee-Fu HUANG, Chia-Yen DAI, Yu-Min KO
  • Publication number: 20200080226
    Abstract: A silicon-based molten composition according to an exemplary embodiment of the present invention is used in a solution growing method for forming silicon carbide single crystal, and is expressed in Formula 1 including silicon (Si), chromium (Cr), vanadium (V), and aluminum (Al). SiaCrbVcAld ??[Formula 1] In Formula 1, a is equal to or greater than 0.4 and equal to or less than 0.9, b+c is equal to or greater than 0.1 and equal to or less than 0.6, c/(b+c) is equal to or greater than 0.05 and equal to or less than 0.95, and d is equal to or greater than 0.01 and equal to or less than 0.1.
    Type: Application
    Filed: November 1, 2018
    Publication date: March 12, 2020
    Applicant: LG Chem, Ltd.
    Inventors: Junghwan Kim, Ho Rim Lee, Chan Yeup Chung, Jung Min Ko, Manshik Park
  • Publication number: 20200083319
    Abstract: A semiconductor device includes a plurality of electrode structures formed on a substrate; and an upper supporter group and a lower supporter between upper ends and lower ends of the plurality of electrode structures The upper supporter group includes a plurality of supporters, and at least some of the plurality of supporters each have an upper surface and a lower surface. One of the upper surface and the lower surface has a curved profile, and the other surface has a flat profile.
    Type: Application
    Filed: November 11, 2019
    Publication date: March 12, 2020
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Ha-young YI, Youn-seok Choi, Young-min Ko, Mun-jun Kim, Hong-gun Kim, Seung-heon Lee
  • Patent number: 10586709
    Abstract: Methods for fabricating a semiconductor device are provided including sequentially forming a first hard mask layer, a second hard mask layer and a photoresist layer on a target layer, patterning the photoresist layer to form a photoresist pattern, sequentially patterning the second hard mask layer and the first hard mask layer using the photoresist pattern as an etching mask to form a first hard mask pattern and a second hard mask pattern on the first hard mask pattern, and etching the target layer using the first hard mask pattern and the second hard mask pattern as an etching mask, wherein the second hard mask layer includes impurity-doped amorphous silicon.
    Type: Grant
    Filed: July 9, 2018
    Date of Patent: March 10, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young-Min Ko, Hyuk Woo Kwon, Jun-Won Lee
  • Publication number: 20200068809
    Abstract: A plant cultivation device includes a light source unit having a first light source emitting stimulation light in a UV region toward a plant and a second light source emitting background light toward the plant, the background light having a different peak wavelength than the stimulation light. The second light source emits the background light during a light period and stops emission of the background light during a dark period. In addition, the first light source emits the stimulation light for a certain period of time during the light period. Further, a cumulative amount of the stimulation light emitted from the first light source is 0.036 J or more per day.
    Type: Application
    Filed: August 27, 2019
    Publication date: March 5, 2020
    Applicant: SEOUL VIOSYS CO., LTD.
    Inventors: Sang Min KO, Jin Won KIM
  • Publication number: 20200060098
    Abstract: A light source of a plant cultivation is turned on or turned off depending on a light period and a dark period of a plant, and the light source of the plant cultivation is turned on in the light period and emits a light having a spectrum with a plurality of peaks to the plant to increase a content of a predetermined substance in the plant.
    Type: Application
    Filed: August 22, 2019
    Publication date: February 27, 2020
    Applicant: SEOUL VIOSYS CO., LTD.
    Inventors: Se Ryung KIM, Sang Min KO, Jin Won KIM, Hyun Su SONG
  • Publication number: 20200060099
    Abstract: A plant cultivation light source is turned on, or turned off depending on a light period and a dark period of a plant. When a portion of the light period is referred to as a first period and the other portion of the light period is referred to as a second period, the first period and the second period are alternately provided with each other, and lights having different wavelengths from each other are provided to the plant in the first and second periods, thereby increasing a content of an active ingredient in the plant.
    Type: Application
    Filed: August 22, 2019
    Publication date: February 27, 2020
    Applicant: SEOUL VIOSYS CO., LTD.
    Inventors: Se Ryung KIM, Sang Min KO, Jin Won KIM, Hyun Su SONG
  • Publication number: 20200063931
    Abstract: A plant cultivation light source includes a first light source emitting a first light in a first wavelength band and a second light source emitting a first light in a second wavelength band different from the first wavelength band. The second wavelength band includes an ultraviolet light wavelength band, and the second light source is driven independently of the first light source to determine whether to emit the second light while the first light source emits the first light.
    Type: Application
    Filed: August 8, 2019
    Publication date: February 27, 2020
    Applicant: SEOUL VIOSYS CO., LTD.
    Inventors: Hyun Su SONG, Sang Min KO, Jong Hyeon KOO, Se Ryung KIM, Jin Won KIM
  • Publication number: 20200066981
    Abstract: A variable resistance memory device may include a memory unit including a first electrode disposed on a substrate, a variable resistance pattern disposed on the first electrode and a second electrode disposed on the variable resistance pattern, a selection pattern disposed on the memory unit, and a capping structure covering a sidewall of the selection pattern. The capping structure may include a first capping pattern and a second capping pattern sequentially stacked on at least one sidewall of the selection pattern. The first capping pattern may be silicon pattern, and the second capping pattern may include a nitride.
    Type: Application
    Filed: March 27, 2019
    Publication date: February 27, 2020
    Inventors: JONG-UK KIM, Young-Min KO, Byong-Ju KIM, Kwang-Min PARK, Jeong-Hee PARK, Dong-Sung CHOI
  • Publication number: 20200066800
    Abstract: A variable resistanvce memory device may include a plurality of first conductive lines extending in a first direction, a plurality of second conductive lines extending in a second direction, a plurality of memory cells, each memory cell at a respective intersection, with respect to a top down view, between a corresponding one of the first conductive lines and a corresponding one of the second conductive lines, each memory cell comprising a variable resistance structure and a switching element sandwiched between a top electrode and a bottom electrode, and a first dielectric layer filling a space between the switching elements of the memory cells. A top surface of the first dielectric layer is disposed between bottom and top surfaces of the top electrodes of the memory cells.
    Type: Application
    Filed: April 27, 2019
    Publication date: February 27, 2020
    Inventors: BYONGJU KIM, YOUNG-MIN KO, JONGUK KIM, KWANGMIN PARK, JEONGHEE PARK, DONGSUNG CHOI
  • Patent number: 10570220
    Abstract: The present invention relates to a composition for a display sealing material having a photopolymerization initiator and a photocurable monomer, the photocurable monomer comprising: a monomer not having the aromatic hydrocarbon group; and a monomer having two or more substituted or unsubstituted phenyl groups of chemical formula 1, wherein about 5 wt % to about 45 wt % of the monomer having two or more substituted or unsubstituted phenyl groups is comprised on the basis of the photocurable monomer and about 55 wt % to about 95 wt % of the monomer not having the aromatic hydrocarbon group is comprised on the basis of the photocurable monomer.
    Type: Grant
    Filed: April 10, 2015
    Date of Patent: February 25, 2020
    Assignee: SAMSUNG SDI CO., LTD.
    Inventors: Hye Jin Kim, Mi Sun Kim, Seong Ryong Nam, Sung Min Ko, Ji Yeon Lee
  • Publication number: 20200058727
    Abstract: An manufacturing method of a display device may include the following steps: forming a transistor on a substrate; forming an insulating layer on the transistor; forming a conductive layer including silver on the insulating layer; forming a photosensitive member on the conductive layer; forming an electrode of a light-emitting element by etching the conductive layer; performing plasma treatment on a structure that comprises the electrode, the plasma treatment using a gas including a halogen; and removing a product that is resulted from the plasma treatment.
    Type: Application
    Filed: July 24, 2019
    Publication date: February 20, 2020
    Inventors: Sang Gab KIM, Hyun Min CHO, Tae Sung KIM, Yu-Gwang JEONG, Su Bin BAE, Jin Seock KIM, Sang Gyun KIM, Hyo Min KO, Kil Won CHO, Han Sol LEE