Abstract: A method of manufacturing a variable resistance memory device includes: forming an array of memory cells on a substrate, each memory cell including a variable resistance structure and a switching element; and forming a sidewall insulating layer covering a sidewall of the switching element. The forming the sidewall insulating layer includes: a preliminary step of supplying a silicon source to an exposed sidewall of the switching element; and a main step of performing a process cycle a plurality of times, the process cycle comprising supplying the silicon source and supplying a reaction gas, A time duration of the supplying the silicon source in the preliminary step is longer than a time duration of the supplying the silicon gas in the process cycle in the main step.

Abstract: A method for detecting whether glucose metabolism is abnormal comprises: detecting GPx2 gene expression, GPx2 protein expression or the activity of GPx2 protein in a test body, and making comparisons with GPx2 expression amount of a normal individual, when the GPx2 expression of the individual is significantly lower than that of the normal individual, indicating that the carbohydrate metabolism of the individual is in an abnormal state. Applications of GPx2 in the preparation of a medical composition for the treatment and prevention of type II diabetes.

Abstract: A silicon-based molten composition according to an exemplary embodiment of the present invention is used in a solution growing method for forming silicon carbide single crystal, and is expressed in Formula 1 including silicon (Si), chromium (Cr), vanadium (V), and aluminum (Al). SiaCrbVcAld ??[Formula 1] In Formula 1, a is equal to or greater than 0.4 and equal to or less than 0.9, b+c is equal to or greater than 0.1 and equal to or less than 0.6, c/(b+c) is equal to or greater than 0.05 and equal to or less than 0.95, and d is equal to or greater than 0.01 and equal to or less than 0.1.

Abstract: A semiconductor device includes a plurality of electrode structures formed on a substrate; and an upper supporter group and a lower supporter between upper ends and lower ends of the plurality of electrode structures The upper supporter group includes a plurality of supporters, and at least some of the plurality of supporters each have an upper surface and a lower surface. One of the upper surface and the lower surface has a curved profile, and the other surface has a flat profile.

Abstract: Methods for fabricating a semiconductor device are provided including sequentially forming a first hard mask layer, a second hard mask layer and a photoresist layer on a target layer, patterning the photoresist layer to form a photoresist pattern, sequentially patterning the second hard mask layer and the first hard mask layer using the photoresist pattern as an etching mask to form a first hard mask pattern and a second hard mask pattern on the first hard mask pattern, and etching the target layer using the first hard mask pattern and the second hard mask pattern as an etching mask, wherein the second hard mask layer includes impurity-doped amorphous silicon.

Abstract: A plant cultivation device includes a light source unit having a first light source emitting stimulation light in a UV region toward a plant and a second light source emitting background light toward the plant, the background light having a different peak wavelength than the stimulation light. The second light source emits the background light during a light period and stops emission of the background light during a dark period. In addition, the first light source emits the stimulation light for a certain period of time during the light period. Further, a cumulative amount of the stimulation light emitted from the first light source is 0.036 J or more per day.

Abstract: A plant cultivation light source is turned on, or turned off depending on a light period and a dark period of a plant. When a portion of the light period is referred to as a first period and the other portion of the light period is referred to as a second period, the first period and the second period are alternately provided with each other, and lights having different wavelengths from each other are provided to the plant in the first and second periods, thereby increasing a content of an active ingredient in the plant.

Abstract: A light source of a plant cultivation is turned on or turned off depending on a light period and a dark period of a plant, and the light source of the plant cultivation is turned on in the light period and emits a light having a spectrum with a plurality of peaks to the plant to increase a content of a predetermined substance in the plant.

Abstract: A plant cultivation light source includes a first light source emitting a first light in a first wavelength band and a second light source emitting a first light in a second wavelength band different from the first wavelength band. The second wavelength band includes an ultraviolet light wavelength band, and the second light source is driven independently of the first light source to determine whether to emit the second light while the first light source emits the first light.

Abstract: A variable resistanvce memory device may include a plurality of first conductive lines extending in a first direction, a plurality of second conductive lines extending in a second direction, a plurality of memory cells, each memory cell at a respective intersection, with respect to a top down view, between a corresponding one of the first conductive lines and a corresponding one of the second conductive lines, each memory cell comprising a variable resistance structure and a switching element sandwiched between a top electrode and a bottom electrode, and a first dielectric layer filling a space between the switching elements of the memory cells. A top surface of the first dielectric layer is disposed between bottom and top surfaces of the top electrodes of the memory cells.

Abstract: A variable resistance memory device may include a memory unit including a first electrode disposed on a substrate, a variable resistance pattern disposed on the first electrode and a second electrode disposed on the variable resistance pattern, a selection pattern disposed on the memory unit, and a capping structure covering a sidewall of the selection pattern. The capping structure may include a first capping pattern and a second capping pattern sequentially stacked on at least one sidewall of the selection pattern. The first capping pattern may be silicon pattern, and the second capping pattern may include a nitride.

Abstract: The present invention relates to a composition for a display sealing material having a photopolymerization initiator and a photocurable monomer, the photocurable monomer comprising: a monomer not having the aromatic hydrocarbon group; and a monomer having two or more substituted or unsubstituted phenyl groups of chemical formula 1, wherein about 5 wt % to about 45 wt % of the monomer having two or more substituted or unsubstituted phenyl groups is comprised on the basis of the photocurable monomer and about 55 wt % to about 95 wt % of the monomer not having the aromatic hydrocarbon group is comprised on the basis of the photocurable monomer.

Abstract: An manufacturing method of a display device may include the following steps: forming a transistor on a substrate; forming an insulating layer on the transistor; forming a conductive layer including silver on the insulating layer; forming a photosensitive member on the conductive layer; forming an electrode of a light-emitting element by etching the conductive layer; performing plasma treatment on a structure that comprises the electrode, the plasma treatment using a gas including a halogen; and removing a product that is resulted from the plasma treatment.

Abstract: There is provided a variable resistance memory device including a first electrode line layer including first electrode lines extending in a first direction and spaced apart from each other on a substrate, a second electrode line layer that is above the first electrode line layer and including second electrode lines extending in a second direction orthogonal to the first direction and spaced apart from each other, and a memory cell layer including memory cells between the first electrode line layer and the second electrode line layer. Each of the memory cells includes a selection device layer, an intermediate electrode layer, and a variable resistance layer. A first insulating layer is between the first electrode lines, a second insulating layer is between the memory cells, and a third insulating layer is between the second electrode lines. The second insulating layer includes air gaps on side surfaces of the memory cells.

Abstract: The present disclosure relates to a silicon-based fusion composition used for a solution growth method for forming a silicon carbide single crystal, and represented by the following Formula 1, including silicon, a first metal (M1), scandium (Sc) and aluminum (Al): SiaM1bSccAld??(Formula 1) wherein a is more than 0.4 and less than 0.8, b is more than 0.2 and less than 0.6, c is more than 0.01 and less than 0.1, and d is more than 0.01 and less than 0.1.

Abstract: A wireless electronic device is provided. The wireless electronic device includes a first antenna and a first transceiver operatively coupled to the first antenna. The first transceiver is configured to receive and transmit data signals of a wireless communications network in a first frequency band. The first antenna is positioned to receive and transmit in a first direction. The wireless electronic device further includes a second antenna and a second transceiver operatively coupled to the second antenna and the first transceiver. The second transceiver is configured to receive and transmit data signals of the wireless communications network in a second frequency band. The second antenna is positioned to receive and transmit in a second direction being opposite to the first direction.

Abstract: Disclosed herein are pyrozolo-pyrimidin-amino-cycloalkyl compounds, analogs thereof, pharmaceutical compositions comprising thereof and therapeutic uses therefor.

Abstract: A lithium air battery may include an electrolyte with a donor number of 10 to 40; and a quinone-based liquid catalyst which added to the electrolyte to induce a discharge in the solution.

Abstract: The invention discloses a backlight apparatus including a wavelength-converting device and a light source. The wavelength-converting device includes a transparent upper barrier film, a transparent lower barrier film, a spacer layer, a filling material and a plurality of quantum dots. The spacer layer is bonded between the transparent upper barrier film and the transparent lower barrier film, and has a plurality of hollowed regions. The filling material covers the plurality of hollowed regions. The plurality of quantum dots are uniformly distributed in the filling material covering each hollowed region. The light source includes a circuit board and a plurality of semiconductor light-emitting device. The circuit board is disposed beneath the transparent lower barrier film. Each hollowed region corresponds to at least one semiconductor light-emitting device. Each semiconductor light-emitting device is electrically bonded on the circuit board, and locates beneath the corresponding hollowed region.

Abstract: A semiconductor device includes a plurality of electrode structures formed on a substrate; and an upper supporter group and a lower supporter between upper ends and lower ends of the plurality of electrode structures The upper supporter group includes a plurality of supporters, and at least some of the plurality of supporters each have an upper surface and a lower surface. One of the upper surface and the lower surface has a curved profile, and the other surface has a flat profile.