Abstract: An organic light-emitting display device includes a pixel area and a transmitting area adjacent to the pixel area. The organic light-emitting display device includes an organic light-emitting diode, a driving power wiring, and a heating pattern adjacent to the driving power wiring. The organic light-emitting diode includes a first electrode disposed in the pixel area, an organic light-emitting layer disposed on the first electrode and a second electrode disposed on the organic light-emitting layer. The driving power wiring is electrically connected to the second electrode. A portion of the organic light-emitting layer is disposed in the transmitting area. The organic light-emitting layer includes an opening area overlapping the heating pattern and at least a portion of the driving power wiring. The second electrode electrically contacts the driving power wiring through the opening area.

Abstract: A display device includes a substrate, a display panel including a first display region having first pixels, a second display region having second pixels, and a third display region located between the first and second display regions and having third pixels, and a component disposed between the substrate and the display panel and which overlaps the second display region in a plan view. The first and third pixels are disposed at a first density in the first display region and the third display region, respectively, and the second pixels are disposed at a second density smaller than the first density in the second display region, and less than all of the third pixels are controlled to emit light during a predetermined display period.

Abstract: A semiconductor device includes a plurality of electrode structures formed on a substrate; and an upper supporter group and a lower supporter between upper ends and lower ends of the plurality of electrode structures The upper supporter group includes a plurality of supporters, and at least some of the plurality of supporters each have an upper surface and a lower surface. One of the upper surface and the lower surface has a curved profile, and the other surface has a flat profile.

Abstract: A method of manufacturing a variable resistance memory device includes: forming an array of memory cells on a substrate, each memory cell including a variable resistance structure and a switching element; and forming a sidewall insulating layer covering a sidewall of the switching element. The forming the sidewall insulating layer includes: a preliminary step of supplying a silicon source to an exposed sidewall of the switching element; and a main step of performing a process cycle a plurality of times, the process cycle comprising supplying the silicon source and supplying a reaction gas, A time duration of the supplying the silicon source in the preliminary step is longer than a time duration of the supplying the silicon gas in the process cycle in the main step.

Abstract: An LED light source unit for plant cultivation includes: at least one first light emitting diode chip emitting light of 430 nm or less, at least three types of phosphors excited by the at least one first light emitting diode chip, and combined light emitted from the first light emitting diode chip and the at least three types of phosphors produces a basic spectrum of white light having a color temperature of 5000K or more.

Abstract: A display device includes a display panel including a main area and a sensor area. Sensor devices overlap the sensor area of the display panel in a thickness direction of the display panel. The display panel includes first subpixels, which are disposed in the sensor area, and second subpixels, which are disposed in the main area. The number of transistors of each of the first subpixels is different from the number of transistors of each of the second subpixels.

Abstract: The present invention relates to a method for preparing a core-gap-shell nanoparticle having an average height of 0.1 nm to 10 nm, in which a Raman-active material is disposed between a core and a shell, and more specifically, to a method for preparing a core-gap-shell nanoparticle, which comprises introducing a shell made of an alloy of a second metal and a third metal, on the core particles of the first metal, the surface of which is modified with a Raman-active material; selectively removing the second metal by treating with a second metal etchant, followed by dealloying; the core-gap-shell nanoparticle prepared by the above method comprising a Raman-active material disposed in the gap, and uses of the core-gap-shell nanoparticle for biosensing and/or bioimaging.

Abstract: A plant cultivation light source includes a plurality of light sources configured to be turned on or turned off depending on a selected plant and a growth stage of the selected plant, and a controller. The controller is operable to turn on the light sources during a light period such that the light sources are operable to emit a light having a spectrum with a plurality of peaks to the selected plant. The light period including a first period and a second period and the first period preceding or following the second period. The controller is operable to adjust the spectrum of the light to alternate the first period and the second period during the light period.

Abstract: A semiconductor device includes a plurality of electrode structures formed on a substrate; and an upper supporter group and a lower supporter between upper ends and lower ends of the plurality of electrode structures The upper supporter group includes a plurality of supporters, and at least some of the plurality of supporters each have an upper surface and a lower surface. One of the upper surface and the lower surface has a curved profile, and the other surface has a flat profile.

Abstract: A light source of a plant cultivation is turned on or turned off depending on a light period and a dark period of a plant, and the light source of the plant cultivation is turned on in the light period and emits a light having a spectrum with a plurality of peaks to the plant to increase a content of a predetermined substance in the plant.

Abstract: The present disclosure relates to a solid catalyst for propylene polymerization and a process for manufacture of a propylene polymer or copolymer using the solid catalyst, and provides a solid catalyst including carriers produced via a reaction between dialkoxy magnesium and metal halide, titanium halide, an organic electron donor, etc. and a process of manufacture of a propylene-based block copolymer via copolymerization of propylene-?-olefin using the solid catalyst. Particularly, internal electron donors including an ester group and an alkoxy group are used as two kinds of organic electron donors used in the present disclosure, and, thus, a block copolymer having high activity and excellent stereoregularity and a high rubber content via copolymerization with ?-olefin can be produced using a solid catalyst system suggested in the present disclosure.

Abstract: A modem chip for supporting combination of data repeatedly transmitted based on hybrid automatic repeat request (HARQ) is provided. The modem chip includes an HARQ combiner configured to perform a HARQ combination by combining retransmitted data with the previous HARQ data, the retransmitted data including retransmitted control channel data received via a control channel and retransmitted data channel data received via a data channel, the previous HARQ data corresponding to data received via the control channel and the data channel, the HARQ combination generating updated HARQ data, a memory configured to store the previous HARQ data and the updated HARQ data, and a memory controller configured to control transmission of the previous HARQ data and the updated HARQ data between the HARQ combiner and the HARQ memory.

Abstract: An electronic device control system is provided.

Abstract: A projector including a projector body and a positioning member is provided. The projector body is used to project a picture. The positioning member is slidably disposed on the projector body and has a scale used to keep the projector body and the projection target at a predetermined distance. The projector body projects a picture with a specific size according to the predetermined distance.

Abstract: Disclosed is an organic light emitting display device including a substrate, an organic light emitting element formed on the substrate, and an encapsulation layer encapsulating the organic light emitting element, wherein the encapsulation layer has a structure in which at least two inorganic layers and at least one organic layer are alternately stacked one above another, each of the inorganic layers having a thickness of about 40 nm to about 1,000 nm and an index of refraction of about 1.41 to about 2.0, each of the organic layer having a thickness of about 0.2 ?m to about 15 ?m and an index of refraction of about 1.4 to about 1.65, the organic layer including a composition for encapsulating a display device, the composition for encapsulating a display device including a photocurable monomer and a photopolymerization initiator.

Abstract: Provided is an organic light emitting display comprising: a substrate including a light emitting zone and a non-light emitting zone, which is positioned around the outside of the light emitting zone; at least one organic light emitting diode formed on the light emitting zone; an encapsulation layer for sealing the organic light emitting diode; and a dam formed on the non-light emitting zone, wherein the encapsulation layer includes a structure in which at least one inorganic layer and at least one organic layer are alternatingly stacked, wherein the organic layer is made from a display sealing material composition, and wherein the display sealing material composition comprises a photo-curable monomer and a photopolymerization initiator. The photo-curable monomer comprises: a monomer not having an aromatic hydrocarbon group; and a monomer, represented by chemical formula 1, having at least two substituted or non-substituted phenyl groups, wherein the photo-curable monomer comprises approximately 5 wt.

Abstract: There is provided a variable resistance memory device including a first electrode line layer including first electrode lines extending in a first direction and spaced apart from each other on a substrate, a second electrode line layer that is above the first electrode line layer and including second electrode lines extending in a second direction orthogonal to the first direction and spaced apart from each other, and a memory cell layer including memory cells between the first electrode line layer and the second electrode line layer. Each of the memory cells includes a selection device layer, an intermediate electrode layer, and a variable resistance layer. A first insulating layer is between the first electrode lines, a second insulating layer is between the memory cells, and a third insulating layer is between the second electrode lines. The second insulating layer includes air gaps on side surfaces of the memory cells.

Abstract: Provided is a silicon-based molten composition including silicon, carbon, and a metal in which a solubility parameter (Csisol) defined by Equation (1) below is less than ?0.37, wherein a SiC single crystal is formed by a solution method: Csisol=A?B+?1??2??Equation (1) in Equation (1) above, A is a first energy (A) of a first evaluation lattice including silicon atoms, a carbon atom, and metal atoms in a silicon crystal lattice including metals and carbons, B is a second energy (B) of a second evaluation lattice including silicon atoms and metal atoms in a silicon crystal lattice including metals, ?1 is a constant of ?5.422, and ?2 is a constant of ?9.097.

Abstract: A silicon-based molten composition according to an exemplary embodiment is used in a solution growing method for forming a silicon carbide single crystal, includes silicon (Si), yttrium (Y), and iron (Fe), and is expressed in Formula 1. SiaYbFec ??[Formula 1] In Formula 1, the a is equal to or greater than 0.4 and equal to or less than 0.8, the b is equal to or greater than 0.2 and equal to or less than 0.3, and the c is equal to or greater than 0.1 and equal to or less than 0.2.

Abstract: A modem chip for supporting combination of data repeatedly transmitted based on hybrid automatic repeat request (HARQ) is provided. The modem chip includes an HARQ combiner configured to perform a HARQ combination by combining retransmitted data with the previous HARQ data, the retransmitted data including retransmitted control channel data received via a control channel and retransmitted data channel data received via a data channel, the previous HARQ data corresponding to data received via the control channel and the data channel, the HARQ combination generating updated HARQ data, a memory configured to store the previous HARQ data and the updated HARQ data, and a memory controller configured to control transmission of the previous HARQ data and the updated HARQ data between the HARQ combiner and the HARQ memory.