Publication number: 20240032439
Abstract: A method of fabricating magnetoresistive random access memory, including providing a substrate, forming a bottom electrode layer, a magnetic tunnel junction stack, a top electrode layer and a hard mask layer sequentially on the substrate, wherein a material of the top electrode layer is titanium nitride, a material of the hard mask layer is tantalum or tantalum nitride, and a percentage of nitrogen in the titanium nitride gradually decreases from a top surface of top electrode layer to a bottom surface of top electrode layer, and patterning the bottom electrode layer, the magnetic tunnel junction stack, the top electrode layer and the hard mask layer into multiple magnetoresistive random access memory cells.
Type:
Application
Filed:
September 27, 2023
Publication date:
January 25, 2024
Applicant:
UNITED MICROELECTRONICS CORP.
Inventors:
Hui-Lin Wang, Chen-Yi Weng, Chin-Yang Hsieh, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, Jing-Yin Jhang, I-Ming Tseng, Yu-Ping Wang, Chien-Ting Lin, Kun-Chen Ho, Yi-Syun Chou, Chang-Min Li, Yi-Wei Tseng, Yu-Tsung Lai, JUN XIE