Abstract: A portable storage device includes a case, a USB plug, a sliding button, a delete button, a controller and a memory module. The delete button is electrically coupled with the controller. Data stored in the device can be deleted through operation of the delete button without a host device.

Abstract: A mobile apparatus is provided. The mobile apparatus comprises a transceiver and a processor. The transceiver receives a nearby signal from a nearby mobile apparatus, wherein the nearby signal carries a nearby positioning information. The processor electrically connected to the transceiver estimates a nearby received signal strength of the nearby signal according to the nearby signal, and generates a host positioning information according to the nearby received signal strength and the nearby positioning information.

Abstract: A multifunctional case includes a base, a cover, and a foldable connecting area connecting the base to the cover, the base defines a receiving space in a front surface for receiving a flat-type electronic device. The cover is substantially the same size as the base and includes a first plate portion, a foldable second plate portion connected to the first plate portion, two foldable third plate portions connected to two sides of the first plate portion, and two foldable fourth plate portions connected to two sides of the second portion. The third plate portions are respectively connected to the fourth plate portions. The cover is foldable relative to the base, the connecting area, and the first through fourth plate portions can cooperatively fold to support the base in a slanted position so that the electronic device is supported in a slanted position.

Abstract: A first substrate and a second substrate are provided. An alignment process is performed on a surface of the first substrate and a surface of the second substrate respectively. A liquid crystal mixture is prepared, where the liquid crystal mixture includes a liquid crystal molecule and a liquid crystal monomer having a functional group of diacrylates, and the liquid crystal monomer having the functional group of diacrylates occupies 0.01-2 wt % of the liquid crystal mixture. The first substrate and the second substrate are assembled, and the liquid crystal mixture is filled therebetween. A polymerization curing process is performed such that the liquid crystal monomer having the functional group of diacrylates is polymerized to respectively form a liquid crystal polymer film on the aligned surfaces of the first and second substrates. The method enhances anchoring energy and reduces problems of V-T shift, surface gliding, and residual image.

Abstract: An adjusting device includes a rotating mechanism disposed between a base and a supporter for adjusting an angle between the supporter and the base, a slide mechanism disposed on the base, and a turntable mechanism slidably disposed on the slide mechanism for holding a panel module, so that the panel module can slide relative to the base along the slide mechanism and for coaxially rotating the panel module relative to the base. A contacting component of the turntable mechanism is for pushing a constraining component of the slide mechanism to pivot relative to an axle, so as to separate the constraining component from a protruding portion of the rotating mechanism for releasing constraint on the supporter relative to the base.

Abstract: An accelerated access apparatus and reading and writing methods thereof are described. A processing unit is used to determine whether the continuation state of a plurality of first address parameters of first request signals. Each first request signal has a first address length. When the first address parameters are continuous thereamong, the processing unit converts one of the second request signals into a second reading command which has a second reading address and a second reading address length. The second reading address length is greater than one of the first address lengths. The processing unit executes the second reading command to read data content to be stored in a buffer unit based on the second reading address and the second reading address length for responding to the second request signals.

Abstract: A wafer level molding structure including a first chip, a second chip and an adhesive layer therebetween is provided. The first chip includes a first back side, a first front side and a plurality of lateral sides, and a plurality of first front side bumps are disposed on the first front side. The second chip includes a second back side and a second front side, and a plurality of second back side bumps and second front side bumps are respectively disposed on the second back side and the second front side. A plurality of through electrodes are disposed in the second chip, and electrically connected the second back side bumps to the second front side bumps. Adhesive materials including a plurality of conductive particles cover the lateral sides, and electrically connect the second back side bumps with the first front side bumps.

Abstract: The present invention relates to a an on-chip inductor structure and a method for manufacturing the same. The an on-chip inductor structure according to the present invention comprises a substrate, a porous layer, a plurality of conductors, and an inductor. The porous layer is disposed on the substrate and has a plurality of voids; each of the plurality of conductors is disposed in the plurality of voids, respectively; and the inductor is disposed on the porous layer. Because the plurality of conductors is used as the core of the inductor, the inductance is increased effectively and the area of the an on-chip inductor is reduced. Besides the manufacturing method according to the present invention is simple and compatible with the current CMOS process, the manufacturing cost can be lowered.

Abstract: A thickness adjustment device for thin-film coating is revealed. The thickness adjustment device for thin-film coating includes a coating device, a support set, and a thickness adjustment unit. The coating device consists of a work piece conveyor that delivers a work piece, and a material supply unit that carries a coating material onto a surface of the work piece to form a film. The support set is connected to the coating device while the thickness adjustment unit is inserted through and mounted on the support set. The thickness adjustment unit includes a scrape part disposed correspondingly to the work piece and used for applying coating material to form the film. The thickness of the film is adjusted according to a controlling force or torque of the thickness adjustment unit that presses downward. Thus the film is coated on the work piece evenly and the film coating quality is increased.

Abstract: A method for manufacturing a MOS transistor is provided. A substrate has a high-k dielectric layer and a barrier in each of a first opening and a second opening formed by removing a dummy gate and located in a first transistor region and a second transistor region. A dielectric barrier layer is formed on the substrate and filled into the first opening and the second opening to cover the barrier layers. A portion of the dielectric barrier in the first transistor region is removed. A first work function metal layer is formed. The first work function metal layer and a portion of the dielectric barrier layer in the second transistor region are removed. A second work function metal layer is formed. The method can avoid a loss of the high-k dielectric layer to maintain the reliability of a gate structure, thereby improving the performance of the MOS transistor.

Abstract: A noble metal-containing titanosilicate material, characterized in that said material is represented with the oxide form of xTiO2.100SiO2.yEOm.zE, wherein x ranges from 0.001 to 50.0; (y+z) ranges from 0.0001 to 20.0 and y/z<5; E represents one or more noble metals selected from the group consisting of Ru, Rh, Pd, Re, Os, Ir, Pt, Ag and Au; m is a number satisfying the oxidation state of E. The crystal grains of said material contain a hollow structure, or a sagging structure. In said material, the synergistic effect between the noble metal and the titanosilicate are enhanced. As compared with the prior art, the selectivity, catalytic activity and stability of the reaction product are obviously increased in the oxidation reaction, e.g. the reaction for preparing propylene oxide by epoxidation of propylene.

Abstract: The present invention discloses a liquid crystal lens and a manufacturing method thereof. At least one first electrode is disposed on a first substrate, a first alignment layer is disposed on the first electrode, a liquid crystal layer is disposed on the first alignment layer, a second alignment layer is disposed on the liquid crystal layer, an electric field uniformization layer is disposed on the second alignment layer, at least one second electrode and at least one third electrode are disposed on the electric field uniformization layer, and the second electrode is arranged around the third electrode. A second substrate is disposed on the second electrode and the third electrode. The third electrode which matches up with the second electrode produces an electric field gradient and the liquid crystal layer is affected uniformly by the electric field uniformization layer so as to achieve rapid focus purpose by the liquid crystal.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region thereon; forming a high-k dielectric layer, a barrier layer, and a first metal layer on the substrate; removing the first metal layer of the second region; forming a polysilicon layer to cover the first metal layer of the first region and the barrier layer of the second region; patterning the polysilicon layer, the first metal layer, the barrier layer, and the high-k dielectric layer to form a first gate structure and a second gate structure in the first region and the second region; and forming a source/drain in the substrate adjacent to two sides of the first gate structure and the second gate structure.

Abstract: A manufacturing method for a metal gate includes providing a substrate having at least a semiconductor device with a conductivity type formed thereon, forming a gate trench in the semiconductor device, forming a work function metal layer having the conductivity type and an intrinsic work function corresponding to the conductivity type in the gate trench, and performing an ion implantation to adjust the intrinsic work function of the work function metal layer to a target work function.

Abstract: An electrode connection structure of a speaker unit is provided. The speaker unit includes at least one electrode layer, which is made of a conductive material, or made of a non-conductive material with a conductive layer formed on a surface thereof. The electrode connection structure includes a conductive electrode and an adhesive material. The conductive electrode is used for providing power supply signals for the speaker unit to generate sounds. The adhesive material adheres the conductive electrode in parallel with a surface of the electrode layer. The adhesive material has adhesive characteristics, so as to electrically connect the conductive electrode and the electrode layer, in which the adhesive material is adhered to a side of the surface of the electrode layer closely adjacent to the conductive electrode with a certain area.