Abstract: A semiconductor device package includes a first substrate and a second substrate arranged above the first substrate. A first connector is disposed on the first substrate, and a first conductor passes through the second substrate and connects to the first connector.

Abstract: The present disclosure provides a semiconductor device package. The semiconductor device package includes a first semiconductor device, a first conductive layer and a second conductive layer. The first semiconductor device has a first conductive pad. The first conductive layer is disposed in direct contact with the first conductive pad. The first conductive layer extends along a direction substantially parallel to a surface of the first conductive pad. The second conductive layer is disposed in direct contact with the first conductive pad and spaced apart from the first conductive layer.

Abstract: A semiconductor package may include a first substrate and a second substrate, a redistribution layer (RDL), a first conductive via and a second conductive via. The first substrate has a first surface and a second surface opposite to the first surface. The second substrate has a first surface and a second surface opposite to the first surface. The RDL is disposed on the first surface of the first substrate and the first surface of the second substrate. The first conductive via passes through the RDL and is electrically connected to the first substrate. The second conductive via passes through the RDL and is electrically connected to the second substrate.

Abstract: A package structure includes a wiring structure and a first electronic device. The wiring structure includes at least one dielectric layer and at least one circuit layer in contact with the dielectric layer. The first electronic device is electrically connected to the wiring structure, and has a first surface, a second surface and at least one lateral side surface extending between the first surface and the second surface. The first electronic device includes a first active circuit region and a first protrusion portion. The first protrusion portion protrudes from the at least one lateral side surface of the first electronic device. A portion of the first active circuit region is disposed in the first protrusion portion.

Abstract: A semiconductor device package includes a connection structure having a first portion and a second portion extending from the first portion, the second portion having a width less than the first portion; and a dielectric layer surrounding the connection structure, wherein the dielectric layer and the second portion of the connection structure defines a space.

Abstract: A package structure includes a wiring structure, a first electronic device, a second electronic device and a reinforcement structure. The wiring structure includes at least one dielectric layer, and at least one circuit layer in contact with the dielectric layer. The at least one circuit layer includes at least one interconnection portion. The first electronic device and the second electronic device are electrically connected to the wiring structure. The second electronic device is electrically connected to the first electronic device through the at least one interconnection portion of the at least one circuit layer. The reinforcement structure is disposed above the at least one interconnection portion of the at least one circuit layer.

Abstract: A semiconductor device package includes a connection structure having a first portion and a second portion extending from the first portion, the second portion having a width less than the first portion; and a dielectric layer surrounding the connection structure, wherein the dielectric layer and the second portion of the connection structure defines a space.

Abstract: A wiring structure includes a first dielectric layer, a second dielectric layer adjacent to the first dielectric layer, and a conductive region. The first dielectric layer defines a first opening, and the second dielectric layer defines a second opening. The conductive region includes a conductive via filling the first opening and the second opening. The conductive region further includes a first conductive trace embedded in the second dielectric layer and electrically connected with the conductive via. The conductive region includes a sidewall traversing through a thickness of the second dielectric layer with a substantial linear profile. A method of manufacturing a wiring structure is also disclosed.

Abstract: A wiring structure includes a first dielectric layer, a second dielectric layer adjacent to the first dielectric layer, and a conductive region. The first dielectric layer defines a first opening, and the second dielectric layer defines a second opening. The conductive region includes a conductive via filling the first opening and the second opening. The conductive region further includes a first conductive trace embedded in the second dielectric layer and electrically connected with the conductive via. The conductive region includes a sidewall traversing through a thickness of the second dielectric layer with a substantial linear profile. A method of manufacturing a wiring structure is also disclosed.

Abstract: A semiconductor device package includes a conductive layer, a first conductive pillar, a circuit layer and a second conductive pillar. The conductive layer has a first surface. The first conductive pillar is disposed on the first surface of the conductive layer. The circuit layer is disposed over the conductive layer. The circuit layer has a first surface facing the conductive layer. The second conductive pillar is disposed on the first surface of the circuit layer. The first conductive pillar is physically spaced apart from the second conductive pillar and electrically connected to the second conductive pillar.

Abstract: A semiconductor package structure includes a conductive structure, at least one semiconductor element, an encapsulant, a redistribution structure and a plurality of bonding wires. The semiconductor element is disposed on and electrically connected to the conductive structure. The encapsulant is disposed on the conductive structure to cover the semiconductor element. The redistribution structure is disposed on the encapsulant, and includes a redistribution layer. The bonding wires electrically connect the redistribution structure and the conductive structure.

Abstract: A semiconductor device package includes a first substrate, an antenna, a support layer, a dielectric layer and a second substrate. The first substrate has a first surface and a second surface opposite to the first surface. The antenna element is disposed on the second surface of the first substrate. The support layer is disposed on the first surface of the first substrate and at the periphery of the first surface of the first substrate. The support layer has a first surface facing away from the first substrate. The dielectric layer is disposed on the first surface of the support layer and spaced apart from the first substrate. The dielectric layer is chemically bonded to the support layer. The second substrate is disposed on a first surface of the dielectric layer facing away from the support layer.

Abstract: The subject application relates to a semiconductor package device, which includes a first conductive layer; a semiconductor wall disposed on the first conductive layer; a first conductive wall disposed on the first conductive layer; and an insulation layer disposed on the first conductive layer and between the semiconductor wall and the first conductive wall.

Abstract: According to various embodiments, a collimator includes a substrate defining a plurality of channels through the substrate. The substrate includes a first surface and a second surface opposite the first surface. Each of the channels includes a first aperture exposed from the first surface, a second aperture between the first surface and the second surface, and a third aperture exposed from the second surface. The first aperture and the third aperture are larger than the second aperture.

Abstract: According to various embodiments, a collimator includes a substrate defining a plurality of channels through the substrate. The substrate includes a first surface and a second surface opposite the first surface. Each of the channels includes a first aperture exposed from the first surface, a second aperture between the first surface and the second surface, and a third aperture exposed from the second surface. The first aperture and the third aperture are larger than the second aperture.

Abstract: A package device includes a circuit layer, at least one conductive segment, an encapsulant and a redistribution layer. The conductive segment is disposed on the circuit layer and has a first surface and a second surface. The encapsulant encapsulates at least a portion of the conductive segment and has a first upper surface. A first portion of the first surface and at least a portion of the second surface of the conductive segment are disposed above the first upper surface of the encapsulant. The redistribution layer is disposed on the encapsulant, the first portion of the first surface of the conductive segment, and the second surface of the conductive segment.

Abstract: A semiconductor process includes: (a) attaching a metal layer on a carrier; (b) removing a portion of the metal layer to form a through hole and at least one metal via, wherein the at least one metal via is disposed in the through hole, and the at least one metal via is separated from a side wall of the through hole by a space; and (c) forming a redistribution layer on the metal layer, wherein the redistribution layer is electrically connected to the at least one metal via.

Abstract: A package device includes a circuit layer, at least one conductive segment, an encapsulant and a redistribution layer. The conductive segment is disposed on the circuit layer and has a first surface and a second surface. The encapsulant encapsulates at least a portion of the conductive segment and has a first upper surface. A first portion of the first surface and at least a portion of the second surface of the conductive segment are disposed above the first upper surface of the encapsulant. The redistribution layer is disposed on the encapsulant, the first portion of the first surface of the conductive segment, and the second surface of the conductive segment.

Abstract: According to various embodiments, a collimator includes a substrate defining a plurality of channels through the substrate. The substrate includes a first surface and a second surface opposite the first surface. Each of the channels includes a first aperture exposed from the first surface, a second aperture between the first surface and the second surface, and a third aperture exposed from the second surface. The first aperture and the third aperture are larger than the second aperture.

Abstract: In accordance with the present invention, there is provided a semiconductor device comprising a semiconductor die or chip, a package body and a through package body via. The semiconductor chip includes a plurality of conductive pads. The package body encapsulates a sidewall of the semiconductor chip, and has at least one hole formed therein having a sidewall which is of a prescribed first surface roughness value. The through package body via is disposed in the hole of the package body and comprises a dielectric material and at least one conductive interconnection metal. The dielectric material is disposed on the sidewall of the hole and defines at least one bore having a sidewall which is of a second surface roughness value less than the first surface roughness value. The interconnection metal is disposed within the bore.