Abstract: An interposer includes an interconnection structure and a redistribution layer. The interconnection structure includes a metal layer, at least one metal via and an isolation material. The metal layer defines at least one through hole having a side wall. The at least one metal via is disposed in the through hole. A space is defined between the at least one metal via and the side wall of the through hole, and the isolation material fills the space. The redistribution layer is disposed on a surface of the interconnection structure and is electrically connected to the metal via.

Abstract: A semiconductor package includes a first semiconductor component, a second semiconductor component, and a connecting element. The first semiconductor component includes a first substrate, and a first bonding pad disposed adjacent to a first surface of the first substrate, and at least one conductive via structure extending from a second surface of the first substrate to the first bonding pad. The second semiconductor component includes a second substrate, a redistribution layer disposed adjacent to a first surface of the second substrate, and a second bonding pad disposed on the redistribution layer. The connecting element is disposed between the first bonding pad and the second bonding pad.

Abstract: An interposer includes an interconnection structure and a redistribution layer. The interconnection structure includes a metal layer, at least one metal via and an isolation material. The metal layer defines at least one through hole having a side wall. The at least one metal via is disposed in the through hole. A space is defined between the at least one metal via and the side wall of the through hole, and the isolation material fills the space. The redistribution layer is disposed on a surface of the interconnection structure and is electrically connected to the metal via.

Abstract: In accordance with the present invention, there is provided a semiconductor device comprising a semiconductor die or chip, a package body and a through package body via. The semiconductor chip includes a plurality of conductive pads. The package body encapsulates a sidewall of the semiconductor chip, and has at least one hole formed therein having a sidewall which is of a prescribed first surface roughness value. The through package body via is disposed in the hole of the package body and comprises a dielectric material and at least one conductive interconnection metal. The dielectric material is disposed on the sidewall of the hole and defines at least one bore having a sidewall which is of a second surface roughness value less than the first surface roughness value. The interconnection metal is disposed within the bore.

Abstract: In accordance with the present invention, there is provided a semiconductor device comprising a semiconductor die or chip, a package body and a through package body via. The semiconductor chip includes a plurality of conductive pads. The package body encapsulates a sidewall of the semiconductor chip, and has at least one hole formed therein having a sidewall which is of a prescribed first surface roughness value. The through package body via is disposed in the hole of the package body and comprises a dielectric material and at least one conductive interconnection metal. The dielectric material is disposed on the sidewall of the hole and defines at least one bore having a sidewall which is of a second surface roughness value less than the first surface roughness value. The interconnection metal is disposed within the bore.

Abstract: In accordance with the present invention, there is provided a semiconductor device comprising a semiconductor die or chip, a package body and a through package body via. The semiconductor chip includes a plurality of conductive pads. The package body encapsulates a sidewall of the semiconductor chip, and has at least one hole formed therein having a sidewall which is of a prescribed first surface roughness value. The through package body via is disposed in the hole of the package body and comprises a dielectric material and at least one conductive interconnection metal. The dielectric material is disposed on the sidewall of the hole and defines at least one bore having a sidewall which is of a second surface roughness value less than the first surface roughness value. The interconnection metal is disposed within the bore.

Abstract: Described herein are semiconductor device packages and redistribution structures including alignment marks and manufacturing methods thereof.

Abstract: A package comprises a first unit including a semiconductor body, a hole, an isolation layer, a conductive layer and a solder. The semiconductor body has a first surface having a pad and a protection layer exposing the pad. The hole penetrates the semiconductor body. The isolation layer is disposed on the side wall of the hole. The conductive layer covers the pad, a part of the protection layer, and the isolation layer. The lower end of the conductive layer extends to below a second surface of the semiconductor body. The solder is disposed in the hole, and is electrically connected to the pad via the conductive layer. A second unit similar to the first unit and stacked thereon includes a lower end of a second conductive layer that extends to below a second surface of a second semiconductor body and contacts the upper end of the first solder.

Abstract: A semiconductor device package includes a semiconductor device, a sealant, a first dielectric layer, an electrically conductive layer, and a second dielectric layer. The semiconductor device includes a contact pad, an active surface, and side surfaces, where the contact pad is disposed adjacent to the active surface. The semiconductor device is formed with a first alignment mark that is disposed adjacent to the active surface. The sealant envelopes the side surfaces of the semiconductor device and exposes the contact pad. The first dielectric layer is disposed adjacent to the sealant and the active surface, and defines a first aperture that exposes the contact pad. The electrically conductive layer is disposed adjacent to the first dielectric layer and is electrically connected to the contact pad through the first aperture. The second dielectric layer is disposed adjacent to the electrically conductive layer.

Abstract: Described herein are semiconductor device packages and redistribution structures including alignment marks and manufacturing methods thereof.

Abstract: Described herein are semiconductor device packages and redistribution structures including alignment marks and manufacturing methods thereof.

Abstract: A semiconductor package and a manufacturing method thereof are provided. A carrier having an adhesion layer is provided. A plurality of chips are disposed on the adhesion layer, wherein an active surface of each chip faces the adhesion layer. A molding compound is formed for encapsulating the chips to form a chip-redistribution encapsulant having a first surface and a second surface, wherein the first surface has a chip area and a peripheral area. The carrier and the adhesion layer are removed, so that the chip-redistribution encapsulant exposes the active surface of each chip. A plurality of solder balls are uniformly formed in the chip area and the peripheral area. The second surface of the chip-redistribution encapsulant is grinded to reduce the thickness of the chip-redistribution encapsulant, wherein the solder balls provide the chip-redistribution encapsulant with a uniform support. The chip-redistribution encapsulant is sawn to form a plurality of packages.

Abstract: A manufacturing method of semiconductor package is provided. A carrier is provided. The chips are disposed on the carrier. The chips are encapsulated by a molding compound, so that the molding compound and the chips form a chip-redistribution encapsulant. The carrier is removed, so that the chip-redistribution encapsulant exposes the pads of the chips. The plasma is applied on the pads and the molding compound. A first dielectric layer is formed on the pads and the surface of the molding compound. The plasma is applied on a surface of the first dielectric layer. A patterned conductive layer is formed on the surface of the first dielectric layer. A second dielectric layer is formed on the patterned conductive layer and the first dielectric layer. A plurality of solder balls are formed on the second dielectric layer. The chip-redistribution encapsulant is divided so as to form a plurality of packages.

Abstract: A manufacturing method of a semiconductor package structure includes the following steps. Firstly, a carrier having an adhesion tape is provided. Next, a plurality of chips are disposed on the adhesion tape. Then, a molding compound is dispensed on the adhesion tape, so that the molding compound covers the chips. Afterwards, a heat spreader is disposed on a plurality of chips. Then, the molding compound is solidified as an encapsulant to fix the heat spreader on the chips. After that, the carrier and the adhesion tape are removed to expose the active surfaces of the chips. Then, a redistribution layer is formed adjacent to the active surfaces of the chips. Next, a plurality of solder balls are disposed on the redistribution layer. Lastly, a plurality of packages are formed by cutting the redistribution layer, the encapsulant and the heat spreader according to the positions of the chip.

Abstract: A method of making a three-dimensional package, including: (a) providing a wafer; (b) forming at least one blind hole; (c) forming an isolation layer; (d) forming a conductive layer; (e) forming a dry film; (f) filling the blind hole with a solder; (g) removing the dry film; (h) patterning the conductive layer; (i) removing a part of the lower surface of the wafer and the isolation layer, so as to expose the conductive layer; (j) stacking a plurality of the wafers, and performing a reflow process; and (k) cutting the stacked wafers, so as to form a plurality of three-dimensional packages. As such, the lower end of the conductive layer is inserted into the solder of the lower wafer, so as to enhance the joint between the conductive layer and the solder, and effectively reduce the overall height of the three-dimensional packages after joining.

Abstract: A package comprises a first unit including a semiconductor body, a hole, an isolation layer, a conductive layer and a solder. The semiconductor body has a first surface having a pad and a protection layer exposing the pad. The hole penetrates the semiconductor body. The isolation layer is disposed on the side wall of the hole. The conductive layer covers the pad, a part of the protection layer, and the isolation layer. The lower end of the conductive layer extends to below a second surface of the semiconductor body. The solder is disposed in the hole, and is electrically connected to the pad via the conductive layer. A second unit similar to the first unit and stacked thereon includes a lower end of a second conductive layer that extends to below a second surface of a second semiconductor body and contacts the upper end of the first solder.

Abstract: The present invention relates to a three-dimensional package and a method of making the same. The method comprises: (a) providing a semiconductor body; (b) forming at least one blind hole in the semiconductor body; (c) forming an isolation layer on the side wall of the blind hole; (d) forming a conductive layer on the isolation layer; (e) patterning the conductive layer; (f) removing a part of the lower surface of the semiconductor body and a part of the isolation layer, so as to expose a part of the conductive layer; (g) forming a solder on the lower end of the conductive layer; (h) stacking a plurality of the semiconductor bodies, and performing a reflow process; and (i) cutting the stacked semiconductor bodies, so as to form a plurality of three-dimensional packages.

Abstract: A three-dimensional package and a method of making the same including providing a wafer; forming at least one blind hole in the wafer; forming an isolation layer on the side wall of the blind hole; forming a conductive layer on the isolation layer; forming a dry film on the conductive layer; filling the blind hole with metal; removing the dry film, and patterning the conductive layer; removing a part of the metal in the blind hole to form a space; removing a part of the second surface of the wafer and a part of the isolation layer, to expose a part of the conductive layer; forming a solder on the lower end of the conductive layer, the melting point of the solder is lower than the metal; stacking a plurality of the wafers, and performing a reflow process; and cutting the stacked wafers, to form three-dimensional packages.

Abstract: A three-dimensional package including a first wafer having at least one first pad and a first protection layer exposing the first pad. A first hole penetrates the first wafer. A first isolation layer is disposed on the side wall of the first hole. The lower end of a first conductive layer extends below the surface of the first wafer. A first metal is disposed in the first hole, and is electrically connected to the first pad via the first conductive layer. A first solder is disposed on the first metal in the first hole, wherein the melting point of the first solder is lower than that of the first metal. A second wafer is configured similarly as the first wafer. A lower end of a second conductive layer of the second wafer extends below the surface of the second wafer and contacts the upper end of the first solder.

Abstract: A method for forming metal bumps is provided. A bonding pad is first formed on the active surface of a chip and then a passivation layer is formed on the active surface of the chip and exposes the bonding pad. An under bump metallurgy is formed on the active surface of the chip to overlay the bonding pad. A layer of patterned photoresist is formed on the under bump metallurgy and exposes the portion of the under bump metallurgy on the bonding pad. A layer of copper is plated on the exposed portion of the under bump metallurgy and then a layer of solder is printed on the copper layer. Afterward the solder is reflowed to form a spherical metal bump. Finally, the photoresist layer is removed and the exposed portion of the under bump metallurgy is etched out.