Abstract: A method is provided for acquiring a user location including, when it is required to acquire a current user location, a Location Service Client (LSC) transmitting a location service request carrying a user bearer identifier of user to a Bearer Mapping Function (BMF) through a Gateway Mobile Location Centre (GMLC), and after receiving the location service request, the BMF searching for a corresponding Interworking Packet Access Gateway (iPAG) according to the user bearer identifier, and after obtaining user location information from the iPAG, the BMF returning the user location information to the LSC through the GMLC or instructing the GMLC to obtain the user location information from the iPAG.

Abstract: A rapid cutoff device includes a thyristor DC switch, a switch and a capacitor. An operation method includes: connecting the thyristor DC switch between a first DC circuit and a second DC circuit; serially connecting the switch and the capacitor which further parallel connects the first DC circuit; when the thyristor DC switch is conducted, supplying a DC current via the thyristor DC switch; when a drive signal of the thyristor DC switch stops, operating the switch to conduct the capacitor which is charged by the first DC circuit to rapidly lower a current of the thyristor DC switch approaching a zero value, thereby rapidly cutting of the thyristor DC switch.

Abstract: Small molecule inhibitors of Nrf2 and methods of their use are provided for treating or preventing a disease, disorder or condition associated with an Nrf2-regulated pathway. The compound can be administered as a single agent or can be administered to enhance the efficacy of a chemotherapeutic drug and/or radiation therapy.

Abstract: The present invention provides small molecule inhibitors of BMP signaling. These compounds may be used to modulate cell growth, differentiation, proliferation, and apoptosis, and thus may be useful for treating diseases or conditions associated with BMP signaling, including inflammation, cardiovascular disease, hematological disease, cancer, and bone disorders, as well as for modulating cellular differentiation and/or proliferation. These compounds may also be used to reduce circulating levels of ApoB-100 or LDL and treat or prevent acquired or congenital hypercholesterolemia or hyperlipoproteinemia; diseases, disorders, or syndromes associated with defects in lipid absorption or metabolism; or diseases, disorders, or syndromes caused by hyperlipidemia.

Abstract: A transistor structure with improved device performance, and a method for forming the same is provided. The transistor structure is an SOI (silicon-on-insulator) transistor. In one embodiment, a silicon layer over the oxide layer is a relatively uniform film and in another embodiment, the silicon layer over the oxide layer is a silicon fin. The transistor devices include source/drain structures formed of a strain material that extends through the silicon layer, through the oxide layer and into the underlying substrate which may be silicon. The source/drain structures also include portions that extend above the upper surface of the silicon layer thereby providing an increased volume of the strain layer to provide added carrier mobility and higher performance.

Abstract: A device includes a semiconductor fin over a substrate, a gate dielectric on sidewalls of the semiconductor fin, and a gate electrode over the gate dielectric. A source/drain region is on a side of the gate electrode. A dislocation plane is in the source/drain region.

Abstract: The present invention relates to compounds and compositions useful for inhibiting and/or reducing platelet deposition, adhesion and/or aggregation. The present invention further relates to methods for the treatment or prophylaxis of thrombotic disorders, including stroke, myocardial infarction, unstable angina, peripheral vascular disease, abrupt closure following angioplasty or stent placement and thrombosis as a result of vascular surgery.

Abstract: The present invention is a device for use by infants or pets which provides a fence for use by infants or pets to confine their activities within a restricted area so that caring of the infants or pets can become easier. The present invention comprises an assembly of fence plates rotatable in relation to each other, wherein the adjacent fence plates are assembled with each other by means of a rotating axle. The fence has a bottom portion which is disposed with fixing members. The present invention assembles a plurality of the fence plates to form a fence. The fence is fixed on the ground by the fixing members to prevent it from sliding. When infants or pets are put into an area restricted by the fence, they can enjoy sufficient rooms for activities. It is also possible to prevent the infants or pets from escaping out of the fence and to confine their activities within a restricted area, thus accidents due to absence of care could be avoided.

Abstract: A method and apparatus are provided for autonomously detecting and reporting anomalies in actions of an autonomous mobile node, or in behaviors of a swarm of autonomous mobile nodes to an operator. The autonomous mobile node may experience anomalies or unexpected situations due to various failures or external influence (e.g. natural weather phenomena, enemy threats). During a training phase a prediction model and a structured model may be established from measurement data received from one or more sensors of an autonomous mobile node or a swarm of nodes while executing an action or behavior under normal circumstances. A prediction model forecasts the expected outcome of an action or behavior, and structured model helps quantify the similarity of a learned action or behavior to the currently observed situation. Based on the measurement data applicable models can be used for an action or behavior for anomaly detection in the action or behavior.

Abstract: Techniques for autonomously establishing, maintaining, and repairing of a wireless communication network among multiple autonomous mobile nodes (AMN) are provided. The multiple AMNs are flown towards a first node. A tentacle is established with the first node and extended to cover a second node over a distance, thereby establishing a wireless communication network between the first node and the second node via the multiple AMNs. Any damage to the established wireless communication network or tentacle may be autonomously detected and repaired by using spare AMNs. Further, the communication network may be used to enable autonomous detection, tracking of the second node, as well as autonomous detection of a contamination area, based on data received from one or more sensors onboard the AMNs deployed in the air.

Abstract: A MOSFET disposed between shallow trench isolation (STI) structures includes an epitaxial silicon layer formed over a substrate surface and extending over inwardly extending ledges of the STI structures. The gate width of the MOSFET is therefore the width of the epitaxial silicon layer and greater than the width of the original substrate surface between the STI structures. The epitaxial silicon layer is formed over the previously doped channel and is undoped upon deposition. A thermal activation operation may be used to drive dopant impurities into the transistor channel region occupied by the epitaxial silicon layer but the dopant concentration at the channel location where the epitaxial silicon layer intersects with the gate dielectric, is minimized.

Abstract: Disclosed are pyruvate kinase M2 activators which are compounds of Formula (I), including those of Formula (II), wherein A1, A2, L, R, R1 to R3, X1 to X3, k, n, and m are as defined herein, that are useful in treating a number of diseases that are treatable by the activation of PKM2, for example, cancer.

Abstract: The present invention relates to compounds of formula P-1 and related compounds and compositions useful for inhibiting and/or reducing platelet deposition, adhesion and/or aggregation. The definitions of A, Y, R1, R2, Ra, Ra?, Rb, Rb?, Rc, Rc?, Rd, Rd?, Re, and Re? are provided herein. The present invention further relates to methods for the treatment or prophylaxis of thrombotic disorders, including stroke, myocardial infarction, unstable angina, peripheral vascular disease, abrupt closure following angioplasty or stent placement and thrombosis as a result of vascular surgery.

Abstract: An adjustable hydraulic jack with a slider locking structure that includes a chassis, hydraulic assembly, boom assembly, and handle lever. The boom assembly includes a bracket, a fore arm, and a rear arm. The bracket includes a pull handle, left and right bracket side-plates, and a bracket-fixing pin. The bracket is connected to one end of the fore arm, the other end of the fore arm is connected to one end of the rear arm, and the other end of the rear arm is connected to the chassis. The left and right bracket side-plates have left and right side-plate sockets on their respective bottoms; the fore arm has left and right sliding chutes and a spring-loaded fixing pin fixed on its upper end. A slider locking device is arranged between the bracket and the fore arm, and includes left and right sliders, a spring and at least one pin shaft.

Abstract: The demand for increased performance and shrinking geometry from ICs has brought the introduction of multi-gate devices including finFET devices. Inducing a higher tensile strain/stress in a region provides for enhanced electron mobility, which may improve performance. High temperature processes during device fabrication tend to relax the stress on these strain inducing layers. The present disclosure relates to a method of forming a strain inducing layer or cap layer at the RPG (replacement poly silicon gate) stage of a finFET device formation process. In some embodiments, the strain inducing layer is doped to reduce the external resistance.

Abstract: The invention features compositions and methods for inhibiting the Pin1 protein, and the treatment of disorders characterized by elevated Pin1 levels.

Abstract: A shadowing compensation device for solar cell module has an input port, an isolated DC-DC power converter, and an output port. The input port is connected to two output ends of a solar cell array comprised of multiple solar cell modules connected in series. The output port is connected to one of the multiple solar cell modules of the solar cell array. When one of the solar cell modules connected to the output port of shadowing compensation device has been shaded, the isolated DC-DC power converter outputs a compensating current to the solar cell module been shaded for increasing the output voltage of the solar cell module been shaded, and increasing the output voltage and output power of the solar cell array.

Abstract: A MOSFET disposed between shallow trench isolation (STI) structures includes an epitaxial silicon layer formed over a substrate surface and extending over inwardly extending ledges of the STI structures. The gate width of the MOSFET is therefore the width of the epitaxial silicon layer and greater than the width of the original substrate surface between the STI structures. The epitaxial silicon layer is formed over the previously doped channel and is undoped upon deposition. A thermal activation operation may be used to drive dopant impurities into the transistor channel region occupied by the epitaxial silicon layer but the dopant concentration at the channel location where the epitaxial silicon layer intersects with the gate dielectric, is minimized.

Abstract: Provided is a transistor and a method for forming a transistor in a semiconductor device. The method includes performing at least one implantation operation in the transistor channel area, then forming a silicon carbide/silicon composite film over the implanted area prior to introducing further dopant impurities. A halo implantation operation with a very low tilt angle is used to form areas of high dopant concentration at edges of the transistor channel to alleviate short channel effects. The transistor structure so-formed includes a reduced dopant impurity concentration at the substrate interface with the gate dielectric and a peak concentration about 10-50 nm below the surface. The dopant profile also includes the transistor channel having high dopant impurity concentration areas at opposed ends of the transistor channel.

Abstract: The present invention relates to compounds and compositions useful for inhibiting and/or reducing platelet deposition, adhesion and/or aggregation. The present invention further relates to a drug-eluting stent comprising said compounds and methods for the treatment or prophylaxis of thrombotic disorders, including stroke, myocardial infarction, unstable angina, peripheral vascular disease, abrupt closure following angioplasty or stent placement and thrombosis as a result of vascular surgery.