Abstract: In one implementation, an electronic device is provided to include a semiconductor memory, wherein the semiconductor memory may include: a variable resistance element including a Magnetic Tunnel Junction (MTJ) structure including a free layer having a changeable magnetization direction free layer, a pinned layer having a fixed magnetization direction and a tunnel barrier layer interposed between the free layer and the pinned layer, and the electronic device may further include, in a first direction in which the free layer, the tunnel barrier layer and the pinned layer are arranged, a first permanent magnet having a first surface facing a first surface of the variable resistance element and spaced from the variable resistance element, wherein a magnetic field generated by the first permanent magnet may have a direction which offsets or reduces an influence of a stray field generated by the pinned layer.

Abstract: The present invention relates to a method for producing a multifunctional polyester fiber, including: mixing a polyester master batch chip, containing cesium tungsten oxide-based particles, with a general polyester chip; spinning the mixture to form a spun fiber; and cooling the spun fiber using a cooling device having a rotational outflow quenching unit and a nozzle-warming heater, and to a fiber produced by the method. The multifunctional polyester fiber according to the present invention exhibits excellent far-infrared emission properties, thermal storage/insulation properties, spinning processability, and dyeability.

Abstract: This technology provides an electronic device. An electronic device in accordance with an implementation of this document includes semiconductor memory, and the semiconductor memory includes a contact plug; a first stack structure disposed over the contact plug and coupled to the contact plug, wherein the first stack structure includes a pinning layer controlling a magnetization of a pinned layer; and a second stack structure disposed over the first stack structure and coupled to the first stack structure, wherein the second stack structure includes a MTJ (Magnetic Tunnel Junction) structure which includes the pinned layer having a pinned magnetization direction, a free layer having a variable magnetization direction, and a tunnel barrier layer interposed between the pinned layer and the free layer, wherein a width of the first stack structure is larger than a width of the contact plug and a width of the second stack structure.

Abstract: An apparatus and a method for synchronizing left and right streams in a stationary/mobile hybrid 3DTV are disclosed. The apparatus according to an exemplary embodiment may synchronize content streams corresponding to left and right images using a timestamp pairing mode, a timestamp offset mode, and a network time protocol (NTP) synchronization mode.

Abstract: According to one embodiment, a magnetic memory includes a first metal layer including a first metal, a second metal layer on the first metal layer, the second metal layer including a second metal which is more easily oxidized than the first metal, the second metal layer having a first sidewall portion which contacts the first metal layer, and the second metal layer having a second sidewall portion above the first sidewall portion, the second sidewall portion which steps back from the first sidewall portion, a magnetoresistive element on the second metal layer, a third metal layer on the magnetoresistive element, and a first material which contacts a sidewall portion of the magnetoresistive element and the second sidewall portion of the second metal layer, the first material including an oxide of the second metal.

Abstract: Provided is a video providing method and a video playing method for a three-dimensional (3D) video, and an apparatus for performing the methods. The video providing method may transmit a reconstruction mode for reconstructing a low-resolution additional video having lower resolution than a high-resolution reference video.

Abstract: Electronic devices and systems having semiconductor memory are provided. In one implementation, for example, an electronic device may include a substrate; an under layer disposed over the substrate and including conductive hafnium silicate; a free layer disposed over the under layer and having a variable magnetization direction; a tunnel barrier layer disposed over the free layer; and a pinned layer disposed over the tunnel barrier layer and having a pinned magnetization direction, and wherein the free layer includes: a first ferromagnetic material; a second ferromagnetic material having a coercive force smaller than that of the first ferromagnetic material; and an amorphous spacer interposed between the first ferromagnetic material and the second ferromagnetic material.

Abstract: Provided is an electronic device including a semiconductor memory. The semiconductor memory may include: a substrate; a plurality of variable resistance elements formed over the substrate and arranged as a matrix, spacer patterns formed over the substrate to surround the variable resistance elements in the matrix with a thickness sufficient to define contact holes between the variable resistance elements, and a source line contact buried in the contact hole.

Abstract: A method for fabricating an electronic device including a semiconductor memory includes: forming a variable resistance element including material layers over a substrate; forming a hard mask layer including a metal over the material layers; selectively etching the hard mask layer to form an etched hard mask layer; etching the material layers by using the etched hard mask layer as an etch barrier, the etching of the material layers providing an etch byproduct formed on sidewalls of the etched material layers and the etch byproduct including a material that is more readily oxidized than the metal of the hard mask layer; and performing a treatment using a gas or plasma to suppresses oxidation of the hard mask layer and facilitate oxidation of the etch byproducts.

Abstract: An electronic device including a semiconductor memory is provided. The semiconductor memory includes an interlayer dielectric layer disposed over a substrate, and having a recess which exposes a portion of the substrate; a bottom contact partially filling the recess; and a resistance variable element including a bottom layer which fills at least a remaining space of the recess over the bottom contact, and a remaining layer which is disposed over the bottom layer and protrudes out of the interlayer dielectric layer.

Abstract: This technology provides an electronic device. An electronic device in accordance with an implementation of this document includes semiconductor memory, and the semiconductor memory includes a contact plug; a first stack structure disposed over the contact plug and coupled to the contact plug, wherein the first stack structure includes a pinning layer controlling a magnetization of a pinned layer; and a second stack structure disposed over the first stack structure and coupled to the first stack structure, wherein the second stack structure includes a MTJ (Magnetic Tunnel Junction) structure which includes the pinned layer having a pinned magnetization direction, a free layer having a variable magnetization direction, and a tunnel barrier layer interposed between the pinned layer and the free layer, wherein a width of the first stack structure is larger than a width of the contact plug and a width of the second stack structure.

Abstract: The present invention is directed to a method for preparing a polyester fiber, the method including: mixing 5-50 wt % of composite metal oxide particles, including a tungsten-based oxide, a cesium-based oxide, an antimony-based oxide, an indium-based oxide, and a tin-based oxide, with 40-90 wt % of one or two types of organic solvents selected from among alcohol, ketone, and acetates, 0.4-20 wt % of polyvinyl butyral, i.e., polymer, and 2-30 wt % of calcium stearate or magnesium stearate to obtain a mixture, and stirring and grinding the mixture to prepare a dispersion liquid; drying the dispersion liquid to prepare a powdered additive; mixing 1-30 wt % of the additive with polyester chips to obtain a mixture and melting this mixture to prepare master batch chips; and mixing 1-10 wt % of the master batch chips with general polyester chips to obtain a mixture, and melting and spinning this mixture.

Abstract: A method of manufacturing an electronic device including a semiconductor memory is provided. The method may include forming a material layer for forming a variable resistance element over a substrate, forming a metal layer over the material layer, forming a mask pattern over the metal layer, forming a metal layer pattern by etching the metal layer using the mask pattern as an etch barrier, performing a surface treatment on the metal layer pattern, and etching the material layer using the metal layer pattern and the metal compound layer as an etch barrier to form a variable resistance element having an external side aligned with an external side of the metal compound layer. An external part of the metal layer pattern may be transformed into a metal compound layer. The metal compound layer may have a low etch rate as an etch barrier.

Abstract: The present invention relates to a method for producing a functional yarn, in which zirconium phosphate having a multiple-layered structure is used as a deodorizing material and a melted polymer is spun through a spinning nozzle having a multi-lobal sectional shape. According to the present invention, the melted polymer contains layered fine zirconium phosphate inorganic particles having low hardness, and thus the abrasion of production process equipment can be minimized during fiber production and also an excellent deodorizing property and an excellent sweat-absorbing and quick-drying property are exhibited.

Abstract: An electronic device including a semiconductor memory is provided. The semiconductor memory includes an interlayer dielectric layer disposed over a substrate, and having a recess which exposes a portion of the substrate; a bottom contact partially filling the recess; and a resistance variable element including a bottom layer which fills at least a remaining space of the recess over the bottom contact, and a remaining layer which is disposed over the bottom layer and protrudes out of the interlayer dielectric layer.

Abstract: An electronic device including a semiconductor memory is provided. The semiconductor memory includes an interlayer dielectric layer disposed over a substrate, and having a recess which exposes a portion of the substrate; a bottom contact partially filling the recess; and a resistance variable element including a bottom layer which fills at least a remaining space of the recess over the bottom contact, and a remaining layer which is disposed over the bottom layer and protrudes out of the interlayer dielectric layer.

Abstract: The present invention relates to a heat-storing and retaining fleece using a polyester yarn containing composite metal oxide particles. The heat-storing and retaining fleece of the present invention exhibits an excellent far-infrared emission property, an excellent heat-storing and retaining property, excellent spinning processability, and excellent dyeability.

Abstract: A content providing apparatus and method, and a content reproduction apparatus and method for accessing a content stream in a hybrid three-dimensional television (3DTV) are disclosed. The content providing apparatus may include a content stream generation unit to generate a first content stream corresponding to a reference image and a second content stream corresponding to a supplementary image, a descriptor generation unit to generate a descriptor associated with the first content stream and the second content stream, and a data transmission unit to transmit the first content stream, the second content stream, and the descriptor to a content reproduction apparatus.

Abstract: According to one embodiment, a method of manufacturing a magnetoresistive memory device includes forming a base substrate including a conductive electrode exposed at a part of a surface, forming a stacked layer structure for a magnetoresistive element on the base substrate, processing the stacked layer structure by etching and thereby forming the magnetoresistive element on the electrode, and exposing the magnetoresistive element to an atmosphere of oxygen radicals.

Abstract: Electronic devices and systems having semiconductor memory are provided. In one implementation, for example, an electronic device may include a substrate; an under layer disposed over the substrate and including conductive hafnium silicate; a free layer disposed over the under layer and having a variable magnetization direction; a tunnel barrier layer disposed over the free layer; and a pinned layer disposed over the tunnel barrier layer and having a pinned magnetization direction, and wherein the free layer includes: a first ferromagnetic material; a second ferromagnetic material having a coercive force smaller than that of the first ferromagnetic material; and an amorphous spacer interposed between the first ferromagnetic material and the second ferromagnetic material.