Abstract: A semiconductor memory device may include a cell substrate including a first surface and a second surface opposite to the first surface, and a landing pattern including a third surface and a fourth surface opposite to the third surface, with the landing pattern spaced apart from the cell substrate in a horizontal direction. The semiconductor memory device may include a plurality of gate electrodes sequentially stacked on the first surface and the third surface, a channel structure on the cell substrate, the channel structure extending vertically and intersecting the plurality of gate electrodes, an upper insulating film covering the second surface and the fourth surface, an input/output pad on the upper insulating film, the input/output pad overlapping at least a portion of the plurality of gate electrodes in the vertical direction, and a support contact extending through the upper insulating film and connecting the landing pattern and the input/output pad.

Abstract: A method of controlling an oil pump of a vehicle includes: acquiring, by a controller, information on an engine operating state or a driving condition detected by a driving information detection part; determining, by the controller, whether a predetermined condition of an alternate mode is satisfied on the basis of the acquired information on the engine operating state or the driving condition; and, when the condition of the alternate mode is satisfied, sequentially performing, by the controller, a high-pressure operation control that controls an operation of an oil pump system so as to an oil pressure of an engine to converge on a predetermined target high-pressure value and a low-pressure operation control that controls the oil pressure of the engine to converge on a predetermined target low-pressure value.

Abstract: A device for controlling a pressure of an oil pump in a vehicle is provided to. The device includes a sensor that detects an inclination of a vehicle and an oil pump that pumps oil in an oil pan to pressure transfer the oil to an engine of the vehicle. A controller determines an inclination value of the vehicle based on the information from the sensor and adjusts the operating mode of the oil pump to adjust the pressure of the oil supplied to the engine.

Abstract: The present invention relates to a serine derivative compound having improved blood-brain barrier (BBB) permeability and the use thereof, and more particularly, to a novel serine derivative compound having improved blood-brain barrier permeability compared to L-serine, and a pharmaceutical composition for preventing, treating or alleviating nervous system diseases such as cognitive disorder, intellectual disability, microcephaly, epilepsy, neurodevelopmental disorder, dementia, autism spectrum disorder, Down's syndrome, Rett's syndrome, fragile X syndrome, Alzheimer's disease, Parkinson's disease, Huntington's disease, and amyotrophic lateral sclerosis, the pharmaceutical composition containing the compound as an active ingredient.

Abstract: The present invention relates to a novel magnesium-serinate compound and the use thereof, and more particularly, to a novel magnesium-serinate compound in which a magnesium atom is chelated to L-serine, and the pharmaceutical use thereof against central nervous system diseases or the like. It was confirmed that the novel magnesium-serinate composition obtained by the production method of the present invention consisted of about 10% magnesium and about 90% serine, as determined by instrumental analysis, was solubilized at a concentration of about 500 mg/ml in water at room temperature at a pH of 6.0 to 10.0, was maintained in an aqueous solution state without forming a precipitate, and was also solubilized at a concentration of about 500 mg/ml in phosphate-buffered saline (PBS) solution at room temperature without forming a precipitate. Thus, the novel magnesium-serinate composition has properties suitable for administration orally or by injection to the human body.

Abstract: An apparatus for controlling oil pump pressure includes a sensor for sensing knocking of an engine, an oil pump configured to determine a pressure for discharging engine oil toward a piston of the engine, and a control unit configured to control the pressure of the engine oil discharged toward the piston by determining whether the knocking occurs based on a parameter transmitted from the sensor for determining whether the knocking occurs, and by controlling the oil pump based on whether the knocking occurs in the engine.

Abstract: A method of controlling an oil pump of a vehicle includes: acquiring, by a controller, information on an engine operating state or a driving condition detected by a driving information detection part; determining, by the controller, whether a predetermined condition of an alternate mode is satisfied on the basis of the acquired information on the engine operating state or the driving condition; and, when the condition of the alternate mode is satisfied, sequentially performing, by the controller, a high-pressure operation control that controls an operation of an oil pump system so as to an oil pressure of an engine to converge on a predetermined target high-pressure value and a low-pressure operation control that controls the oil pressure of the engine to converge on a predetermined target low-pressure value.

Abstract: A device for controlling a pressure of an oil pump in a vehicle is provided to. The device includes a sensor that detects an inclination of a vehicle and an oil pump that pumps oil in an oil pan to pressure transfer the oil to an engine of the vehicle. A controller determines an inclination value of the vehicle based on the information from the sensor and adjusts the operating mode of the oil pump to adjust the pressure of the oil supplied to the engine.

Abstract: A memory device may include multiple channel regions extending in a direction perpendicular to an upper surface of a substrate, a plurality of gate electrode layers and a plurality of insulating layers stacked on the substrate to be adjacent at least a portion of the plurality of channel regions, an interlayer insulating layer disposed on the plurality of gate electrode layers, a plurality of cell contact plugs passing through the interlayer insulating layer. Each of the plurality of cell contacts is connected to each of the plurality of gate electrode layers. A vertical insulating layer extends from the interlayer insulating layer disposed between the plurality of channel regions and the plurality of cell contact plugs and has a portion surrounded by at least one of the plurality of gate electrode layers.

Abstract: A piston ring for an engine includes a compression ring fitted into one of a plurality of ring grooves of a piston head, wherein the compression ring has a first section of which a cross-section has a quadrangular shape and a second section of which a cross-section has an internal bevel shape having a bevel surface on a top corner of an inner peripheral surface, the first section and the second section alternately arranged along a circumferential direction of the piston ring.

Abstract: An apparatus for controlling oil pump pressure includes a sensor for sensing knocking of an engine, an oil pump configured to determine a pressure for discharging engine oil toward a piston of the engine, and a control unit configured to control the pressure of the engine oil discharged toward the piston by determining whether the knocking occurs based on a parameter transmitted from the sensor for determining whether the knocking occurs, and by controlling the oil pump based on whether the knocking occurs in the engine.

Abstract: A memory device may include multiple channel regions extending in a direction perpendicular to an upper surface of a substrate, a plurality of gate electrode layers and a plurality of insulating layers stacked on the substrate to be adjacent at least a portion of the plurality of channel regions, an interlayer insulating layer disposed on the plurality of gate electrode layers, a plurality of cell contact plugs passing through the interlayer insulating layer. Each of the plurality of cell contacts is connected to each of the plurality of gate electrode layers. A vertical insulating layer extends from the interlayer insulating layer disposed between the plurality of channel regions and the plurality of cell contact plugs and has a portion surrounded by at least one of the plurality of gate electrode layers.

Abstract: A piston ring for an engine includes a compression ring fitted into one of a plurality of ring grooves of a piston head, wherein the compression ring has a first section of which a cross-section has a quadrangular shape and a second section of which a cross-section has an internal bevel shape having a bevel surface on a top corner of an inner peripheral surface, the first section and the second section alternately arranged along a circumferential direction of the piston ring.

Abstract: A memory device may include multiple channel regions extending in a direction perpendicular to an upper surface of a substrate, a plurality of gate electrode layers and a plurality of insulating layers stacked on the substrate to be adjacent at least a portion of the plurality of channel regions, an interlayer insulating layer disposed on the plurality of gate electrode layers, a plurality of cell contact plugs passing through the interlayer insulating layer. Each of the plurality of cell contacts is connected to each of the plurality of gate electrode layers. A vertical insulating layer extends from the interlayer insulating layer disposed between the plurality of channel regions and the plurality of cell contact plugs and has a portion surrounded by at least one of the plurality of gate electrode layers.

Abstract: A memory device may include multiple channel regions extending in a direction perpendicular to an upper surface of a substrate, a plurality of gate electrode layers and a plurality of insulating layers stacked on the substrate to be adjacent at least a portion of the plurality of channel regions, an interlayer insulating layer disposed on the plurality of gate electrode layers, a plurality of cell contact plugs passing through the interlayer insulating layer. Each of the plurality of cell contacts is connected to each of the plurality of gate electrode layers. A vertical insulating layer extends from the interlayer insulating layer disposed between the plurality of channel regions and the plurality of cell contact plugs and has a portion surrounded by at least one of the plurality of gate electrode layers.

Abstract: A memory device may include multiple channel regions extending in a direction perpendicular to an upper surface of a substrate, a plurality of gate electrode layers and a plurality of insulating layers stacked on the substrate to be adjacent at least a portion of the plurality of channel regions, an interlayer insulating layer disposed on the plurality of gate electrode layers, a plurality of cell contact plugs passing through the interlayer insulating layer. Each of the plurality of cell contacts is connected to each of the plurality of gate electrode layers. A vertical insulating layer extends from the interlayer insulating layer disposed between the plurality of channel regions and the plurality of cell contact plugs and has a portion surrounded by at least one of the plurality of gate electrode layers.

Abstract: The present disclosure relates to a single crystal metal film containing hydrogen atoms or hydrogen ions, which is oriented only in the (111) crystal plane on a substrate or without a substrate, and a method for preparing the same. According to the present disclosure, a single crystal metal film containing hydrogen atoms or hydrogen ions, which is oriented only in the (111) crystal plane, can be formed in various shapes such as a foil, a plate, a block or a tube even without an expensive substrate only by heat-treating a metal precursor having crystallinity and preference for orientation in the crystal plane under a hydrogen atmosphere. Because electrical conductivity is improved due to the contained hydrogen atoms or hydrogen ions, the single crystal metal film can be used as a material for a display driver IC, a semiconductor device, a lithium secondary battery, a fuel cell, a solar cell or a gas sensor.

Abstract: A memory device may include multiple channel regions extending in a direction perpendicular to an upper surface of a substrate, a plurality of gate electrode layers and a plurality of insulating layers stacked on the substrate to be adjacent at least a portion of the plurality of channel regions, an interlayer insulating layer disposed on the plurality of gate electrode layers, a plurality of cell contact plugs passing through the interlayer insulating layer. Each of the plurality of cell contacts is connected to each of the plurality of gate electrode layers. A vertical insulating layer extends from the interlayer insulating layer disposed between the plurality of channel regions and the plurality of cell contact plugs and has a portion surrounded by at least one of the plurality of gate electrode layers.

Abstract: A semiconductor substrate and a fabrication method thereof, and a semiconductor apparatus using the same and a fabrication method thereof are provided. The semiconductor substrate includes a semiconductor wafer, a silicon germanium (SiGe)-based impurity doping region formed on the semiconductor wafer, and a protection layer formed on the SiGe-based impurity doping region.

Abstract: A vertical memory device and a method of manufacturing a vertical memory device are disclosed. The vertical memory device includes a substrate, a plurality of channels, a charge storage structure, a plurality of gate electrodes, a first semiconductor structure, and a protection layer pattern. The substrate includes a first region and a second region. The plurality of channels is disposed in the first region. The plurality of channels extends in a first direction substantially perpendicular to a top surface of the substrate. The charge storage structure is disposed on a sidewall of each channel. The plurality of gate electrodes is arranged on a sidewall of the charge storage structure and is spaced apart from each other in the first direction. The first semiconductor structure is disposed in the second region. The protection layer pattern covers the first semiconductor structure. The protection layer pattern has a thickness substantially similar to a thickness of a lowermost gate electrode.