Abstract: The present invention relates to a method for forming a contact in a semiconductor device. The method includes the steps of: forming a P-type source/drain junction in a substrate; forming an inter-layer insulation layer on the substrate; forming a contact hole exposing at least one portion of the P-type source/drain junction by etching the inter-layer insulation layer; forming a plug ion implantation region by implanting boron fluoride ions into the exposed portion of the P-type source/drain junction, the boron fluoride ion having the less bonding number of fluorine than 49BF2; performing an activation annealing process for activating dopants implanted into the plug ion implantation region; and forming a contact connected to the P-type source/drain junction through the contact hole.

Abstract: The present invention discloses a method for manufacturing semiconductor device wherein a cleaning process of a buffer layer is performed prior to a formation of a nitride film. The cleaning process allows to maintain the deposition thickness of the nitride film even when the time between the formation of the buffer layer and the formation of the nitride film is long.

Abstract: Disclosed are an ion implantation apparatus and a method for implanting ions by using the same. The ion implanter for implanting ions into a wafer, includes: a first quadrupole magnet assembly for focusing an ion beam transmitted from an ion beam source; a scanner for deflecting the transmitted ion beam in the directions of an X-axis and an Y-axis; a second quadrupole magnet assembly for converging and diverging the ion beam passing through the scanner in the directions of the X- and Y-axes; and a beam parallelizer for rotating the ion beam in synchronization with the second quadrupole magnet assembly, thereby implanting the ion beam into the wafer.

Abstract: Disclosed is a method of manufacturing semiconductor devices, which can improve electrical characteristics of semiconductor devices.

Abstract: The present invention provides a method for implanting ions in a semiconductor device capable of compensating for a difference in threshold voltages between a central portion and edge portions of a substrate generated while performing uniform ion implantation to entire surfaces of a substrate and another method for fabricating a semiconductor device capable of improving distribution of transistor parameters inside a substrate by forming a nonuniform channel doping layer or by forming a nonuniform junction profile.

Abstract: The present invention relates to a method for fabricating a capacitor of a semiconductor device. The method includes the steps of: forming a storage node oxide layer having a hole for forming a storage node on a substrate; forming a silicon layer on the storage node oxide layer having the hole; forming a photoresist on the silicon layer such that the photoresist fills the hole; forming a storage node having a cylinder shape inside of the hole by removing the silicon layer disposed on an upper surface of the storage node oxide layer; ion-implanting an impurity onto head portions of the storage node under a state that the photoresist remains; removing the photoresist; and growing metastable-polysilicon (MPS) grains on inner walls of the storage node.

Abstract: The present invention relates to a method for forming a contact in a semiconductor device. The method includes the steps of: forming a P-type source/drain junction in a substrate; forming an inter-layer insulation layer on the substrate; forming a contact hole exposing at least one portion of the P-type source/drain junction by etching the inter-layer insulation layer; forming a plug ion implantation region by implanting boron fluoride ions into the exposed portion of the P-type source/drain junction, the boron fluoride ion having the less bonding number of fluorine than 49BF2; performing an activation annealing process for activating dopants implanted into the plug ion implantation region; and forming a contact connected to the P-type source/drain junction through the contact hole.

Abstract: The present invention relates to a method for fabricating a capacitor of a semiconductor device. The method includes the steps of: forming a storage node oxide layer having a hole for forming a storage node on a substrate; forming a silicon layer on the storage node oxide layer having the hole; forming a photoresist on the silicon layer such that the photoresist fills the hole; forming a storage node having a cylinder shape inside of the hole by removing the silicon layer disposed on an upper surface of the storage node oxide layer; ion-implanting an impurity onto head portions of the storage node under a state that the photoresist remains; removing the photoresist; and growing metastable-polysilicon (MPS) grains on inner walls of the storage node.

Abstract: Disclosed is a method of manufacturing semiconductor devices, which can improve electrical characteristics of semiconductor devices.

Abstract: The invention relates to a method of forming wiring in a semiconductor device. In order to prevent a lift or a crack generated when nitride films having different physical properties come in contact, the invention uses a nitride film having a similar stress characteristic; a nitride film that can be deposited by a low pressure chemical vapor deposition (LPCVD) method in a single type chamber capable of processing wafers one by one, and a nitride film that can be deposited by a low pressure chemical vapor deposition (LPCVD) method in a batch type chamber capable of processing several sheet of wafers.