Abstract: An object of the invention is to provide a preventive maintenance for effectively removing polymer stacked on a lower electrode within a reaction chamber of etching equipment during the process of dry etching of a silicon oxide layer. First, the lower electrode is preferably set at 0° C., and then the reaction chamber is pre-cleaned preferably 20 times by a pump/purge cleaning manner. After the pre-cleaning, nitrogen or inert gas is supplied into the reaction chamber such that the internal pressure is equal to atmospheric pressure. Subsequently, the reaction chamber is opened preferably for 10 minutes, and the lower electrode is kept at 0° C. during this moment. Afterwards, the surface of the lower electrode is wiped by a piece of clean cloth to peel off the polymer. Finally, the lower electrode is preferably set at 25° C. and is wiped several times by using de-ionized water, isopropanol (IPA), ethanol, a solution of hydrogen peroxide in water, or Cleaner 5060 produced by the 3M corporation.

Abstract: A method of in situ reactive gas plasma treatment is disclosed. The method is capable of removing a residue remained in a metal etching chamber after the metal etching process to improve the yield of the wafer and the particle performance of the metal etching chamber. The method includes the steps of (a) vactuating the metal etching chamber after the metal etching process, (b) introducing a reactive gas to the metal etching chamber, and (c) applying an electromagnetic power to the metal etching chamber for producing a plasma derived from the reactive gas to remove the residue inside the metal etching chamber and/or on the wafer.

Abstract: A method for polysilicon etching with HBr, He and He/O2 as reactive gas source is disclosed. A chamber pressure greater than 30 mTorr is held to achieve high selectivity to polysilicon over silicon oxide. A total flow rate of HBr and He greater than 420 sccm is provided. Under this condition of the total flow rate of HBr and He, the flow rates of HBr and He are respectively held in the range of about 180-280 sccm, and the flow rate of He/O2 is at about 5-10 sccm.

Abstract: A method for preventing corrosion and particulate in a load-lock chamber is disclosed. The load-lock chamber is adjourning with an etching chamber and a wafer transferred module, each time a wafer in the cassette is transferred into the etching chamber for etching by a transfer arm. After that, the etched wafer is withdrawn by the same way to the cassette. The load-lock chamber comprising an outlet of N2-purge tube therein for venting the vacuum in the load-lock chamber to the surrounding. The method comprising at least a step of coupling heating means to the N2-purge tube, or heating N2 gases before injecting into the N2-purge tube so that the temperature of the N2-purge tube will at least not lower than the temperature of an environment within the load-lock chamber.

Abstract: The present invention relates to stable compositions useful as primary standards and calibrators and controls comprising a cardiac troponin I (cTnI) such as native, recombinant, addition and deletion forms thereof, whether or not complexed with other troponin subunits such as TnC and/or TnT, in an inactivated human serum. The compositions are obtained by incubating troponin complexes with human serum. The compositions are characterized by an immunodetectability ratio of epitopes on the N-terminal segment to epitopes on the C-terminal segment substantially equivalent to that of pooled, fresh serum from acute myocardial infarction patients.

Abstract: A transparent powder-proof housing covers the heater block of a PECVD reactor chamber tightly, thereby to prevent from powder pollution while cleaning the interior of the reactor chamber. The transparent powder-proof housing has two outlets, one for connecting to a vacuum cleaner and the other for human operation inside the reactor chamber. The vacuum cleaner vacuums the powder dust out of the transparent powder-proof housing, thereby to largely reduce the powder pollution in a clean room and the chances to jeopardize human health.

Abstract: A method of forming a trench power metal-oxide semiconductor (MOS) transistor over a semiconductor substrate is proposed in the present invention. First, a pad oxide layer is formed on said substrate, a masking layer is then formed on the pad oxide layer. Next, the masking layer and the pad oxide layer are defined the trench pattern, and the substrate is etched to form the trench structure. A gate oxide layer is formed on the outer surface of the trench structure. Then, a conducting layer is fill into said trench structure for serving as a gate structure. The doped areas are formed in the substrate to serve as source structures. Next, the sidewall spacers are formed on sidewalls of the masking layer and the pad oxide layer. A field oxide layer is then formed on the conducting layer.

Abstract: A method of determining quantitatively the exposure levels for photoresists in semiconductor photolithography employs a specially designed grating pattern on a mask. The mask is first used to expose a series of LIM image gratings of different dosages. Then a normal plane wave at a longer wavelength is incident on these gratings one by one, and some nonzero order diffraction efficiency of the grating is measured to determine quantitatively the correct dosage to be used. This method can make a determination of exposure dosage, without knowledge of underlying film thickness and refractive index, and handle either resist thickness change or underlying film thickness/refractive index change or both.

Abstract: Diaziridinylpolyamines useful as anti-cancer agents; compositions containing the same, and methods of using the same for the treatment of cancer are described.

Abstract: A method of determining quantitatively the exposure levels for photoresists in semiconductor photolithography employs a specially designed grating pattern on a mask. The mask is first used to expose a series of LIM image gratings of different dosages. Then a normal plane wave at a longer wavelength is incident on these gratings one by one, and some nonzero order diffraction efficiency of the grating is measured to determine quantitatively the correct dosage to be used. This method can make a determination of exposure dosage, without knowledge of underlying film thickness and refractive index, and handle either resist thickness change or underlying film thickness/refractive index change or both.

Abstract: A simplified method of forming a phase shift structure for a lithographic mask includes the conformal deposition of a phase shift material, preferably having an index of refraction similar to that of the mask substrate, over a patterned layer of opaque material and exposed areas of the mask substrate corresponding to the pattern. The thickness of the opaque patterned layer, in combination with the conformal deposition preferably establishes a differentially altered optical path length to produce a phase shift which enhances contrast and increases illumination and resolution in fine patterns. In variant forms of the invention, the conformal deposition of either phase shift material or a sidewall spacer material is followed by an anisotropic removal of material to form the phase shift structure.

Abstract: A method of determining quantitatively the exposure levels for photoresists in semiconductor photolithography employs a specially designed grating pattern on a mask. The mask is first used to expose a series of LIM image gratings of different dosages. Then a normal plane wave at a longer wavelength is incident on these gratings one by one, and some nonzero order diffraction efficiency of the grating is measured to determine quantitatively the correct dosage to be used. This method can make a determination of exposure dosage, without knowledge of underlying film thickness and refractive index, and handle either resist thickness change or underlying film thickness/refractive index change or both.

Abstract: A subtractive method for making a Levenson type lithographic phase shift mask using a sacrificial etch monitor film in which some of the monitor film is left standing on the opaque portions of the mask. The monitor film otherwise is consumed when it is simultaneously etched with selected portions of the mask substrate to produce recesses of desired depth in the substrate. The etching is stopped upon detecting that the etched monitor film is completely consumed. The technique also is adapted for the fabrication of a RIM type lithographic phase shift mask combined with the Levenson type phase shift mask in the same mask. The technique further is adapted to include 90 degree shift transitions at the end of the Levenson line-space pairs of the mask. The monitor film left standing on the opaque portions of the mask provides self-aligned phase error correction to offset sidewall scattering in the Levenson type mask.

Abstract: The tray mounting assembly includes a U-shaped frame with two free ends, each of which has a hole aligned with the other, and a plate having a front wall with a mounting shaft extending upward from the front and a rear wall on which a lug is mounted. The plate is pivotally connected to the U-shaped frame.