Abstract: A chip for a smart card including a plurality of electrical contacts for communication of data with a smart card reader is disclosed. In one embodiment, a chip for a smart card includes a core circuit and a plurality of input/output pads corresponding to said set of electrical contacts, wherein said input/output pads are divided into at least a first column and a second column placed immediately adjacent to the first column, such that the first and second columns form a cluster. In another embodiment, eight input/output pads are divided into two columns, placed immediately adjacent to each other. The cluster may be partially surrounded by the core circuit. The chip may further comprise an ESD network, comprising VDD and GND buses for improved ESD protection while reducing the size of the chip.

Abstract: Circuit and method for RC power clamp triggered dual SCR ESD protection. In an integrated circuit, a protected pad is coupled to an upper SCR circuit and a lower SCR circuit; and both are coupled to the RC power clamp circuit, which is coupled between the positive voltage supply and the ground voltage supply. A structure for ESD protection is disclosed having a first well of a first conductivity type adjacent to a second well of a second conductivity type, the boundary forming a p-n junction, and a pad contact diffusion region in each well electrically coupled to a pad terminal; additional diffusions are provided proximate to and electrically isolated from the pad contact diffusion regions, the diffusion regions and first and second wells form two SCR devices. These SCR devices are triggered, during an ESD event, by current injected into the respective wells by an RC power clamp circuit.

Abstract: An electrostatic discharge (ESD) protection circuit structure includes a dual directional silicon controlled rectifier (SCR) formed in a substrate. The SCR includes first and second P-wells laterally interposed by an N-well. A deep N-well is disposed underneath the P-wells and the N-well. First and second N-type regions are disposed in the first and second P-wells, respectively, and are coupled to a pair of pads. First and second P-type regions are disposed in the first and second P-wells, respectively, are coupled to the pads, and are disposed closer to the N-well than the first and second N-type regions, respectively.

Abstract: Circuit and method for RC power clamp triggered dual SCR ESD protection. In an integrated circuit, a protected pad is coupled to an upper SCR circuit and a lower SCR circuit; and both are coupled to the RC power clamp circuit, which is coupled between the positive voltage supply and the ground voltage supply. A structure for ESD protection is disclosed having a first well of a first conductivity type adjacent to a second well of a second conductivity type, the boundary forming a p-n junction, and a pad contact diffusion region in each well electrically coupled to a pad terminal; additional diffusions are provided proximate to and electrically isolated from the pad contact diffusion regions, the diffusion regions and first and second wells form two SCR devices. These SCR devices are triggered, during an ESD event, by current injected into the respective wells by an RC power clamp circuit.

Abstract: I. A method and system is disclosed for generating a desired input/output (I/O) cell based on a basic cell from a library. After identifying a configuration requirement for a desired I/O cell to be used for an integrated circuit design, at least one basic cell is selected, the basic cell having a base component for generating the desired I/O cell to meet the configuration requirement. A connection template is generated having one or more programmable connection points identified thereon, the programmable connection points identifying locations for making connections to one or more feature components of the basic cell. The selected basic cell and the connection template are combined to generate a design file, wherein the design file corresponds to the desired I/O cell with the predetermined feature components of the basic cell integrated with the basic component to satisfy the configuration requirement. The disclosed method reduces the design cycle-time as well as circuit-library maintenance and update effort.

Abstract: Provided are an electrostatic discharge (ESD) protection device and a method for making such a device. In one example, the ESD protection device includes a Zener diode region formed in a substrate and an N-type metal oxide semiconductor (NMOS) device formed adjacent to the Zener diode region. The Zener diode region has two doped regions, a gate with a grounded potential positioned between the two doped regions, and two light doped drain (LDD) features formed in the substrate. One of the LDD features is positioned between each of the two doped regions and the gate. The NMOS device includes a source and a drain formed in the substrate and a second gate positioned between the source and the drain.

Abstract: A multi-domain ESD protection circuit structure is described. The preferred embodiment of the present invention selects power lines of an internal circuit as ESD buses. The power lines of the remaining internal circuits are coupled with the ESD buses through the ESD connection cells. In another embodiment of the preferred invention, the VDD power line from one internal circuit and the VSS power line from another circuit are selected as ESD buses. In yet another embodiment, either a VDD power line or a VSS power line of an internal circuit is selected as an ESD bus.

Abstract: A chip for a smart card including a plurality of electrical contacts for communication of data with a smart card reader is disclosed. In one embodiment, a chip for a smart card includes a core circuit and a plurality of input/output pads corresponding to said set of electrical contacts, wherein said input/output pads are divided into at least a first column and a second column placed immediately adjacent to the first column, such that the first and second columns form a cluster. In another embodiment, eight input/output pads are divided into two columns, placed immediately adjacent to each other. The cluster may be partially surrounded by the core circuit. The chip may further comprise an ESD network, comprising VDD and GND buses for improved ESD protection while reducing the size of the chip.

Abstract: This invention discloses an electrostatic discharge (ESD) protection circuit that comprises a substrate of a predetermined type, at least one MOS transistor being coupled to a pad of an integrated circuit for dissipating an ESD current from the pad during an ESD event, a substrate contact region, and at least one floating diffusion region formed in a substrate area between the MOS transistor and the substrate contact region for reducing a trigger-on voltage of the MOS transistor during the ESD event.

Abstract: I. A method and system is disclosed for generating a desired input/output (I/O) cell based on a basic cell from a library. After identifying a configuration requirement for a desired I/O cell to be used for an integrated circuit design, at least one basic cell is selected, the basic cell having a base component for generating the desired I/O cell to meet the configuration requirement. A connection template is generated having one or more programmable connection points identified thereon, the programmable connection points identifying locations for making connections to one or more feature components of the basic cell. The selected basic cell and the connection template are combined to generate a design file, wherein the design file corresponds to the desired I/O cell with the predetermined feature components of the basic cell integrated with the basic component to satisfy the configuration requirement. The disclosed method reduces the design cycle-time as well as circuit-library maintenance and update effort.

Abstract: A method and system is disclosed for generating a desired input/output (I/O) cell based on a basic cell from a library. After identifying a configuration requirement for a desired I/O cell to be used for an integrated circuit design, at least one basic cell is selected, the basic cell having a base component for generating the desired I/O cell to meet the configuration requirement. A connection template is generated having one or more programmable connection points identified thereon, the programmable connection points identifying locations for making connections to one or more feature components of the basic cell. The selected basic cell and the connection template are combined to generate a design file, wherein the design file corresponds to the desired I/O cell with the predetermined feature components of the basic cell integrated with the basic component to satisfy the configuration requirement. The disclosed method reduces the design cycle-time as well as circuit-library maintenance and update effort.

Abstract: This invention discloses an electrostatic discharge (ESD) protection circuit that comprises a substrate of a predetermined type, at least one MOS transistor being coupled to a pad of an integrated circuit for dissipating an ESD current from the pad during an ESD event, a substrate contact region, and at least one floating diffusion region formed in a substrate area between the MOS transistor and the substrate contact region for reducing a trigger-on voltage of the MOS transistor during the ESD event.

Abstract: Provided are an electrostatic discharge (ESD) protection device and a method for making such a device. In one example, the ESD protection device includes a Zener diode region formed in a substrate and an N-type metal oxide semiconductor (NMOS) device formed adjacent to the Zener diode region. The Zener diode region has two doped regions, a gate with a grounded potential positioned between the two doped regions, and two light doped drain (LDD) features formed in the substrate. One of the LDD features is positioned between each of the two doped regions and the gate. The NMOS device includes a source and a drain formed in the substrate and a second gate positioned between the source and the drain.

Abstract: A multi-domain ESD protection circuit structure is described. The preferred embodiment of the present invention selects power lines of an internal circuit as ESD buses. The power lines of the remaining internal circuits are coupled with the ESD buses through the ESD connection cells. In another embodiments of the preferred invention, the VDD power line from one internal circuit and the VSS power line from another circuit are selected as ESD buses. In yet another embodiment, either a VDD power line or a VSS power line of an internal circuit is selected as an ESD bus.

Abstract: A method and system is disclosed for generating a desired input/output (I/O) cell based on a basic cell from a library. After identifying a configuration requirement for a desired I/O cell to be used for an integrated circuit design, at least one basic cell is selected, the basic cell having a base component for generating the desired I/O cell to meet the configuration requirement. A connection template is generated having one or more programmable connection points identified thereon, the programmable connection points identifying locations for making connections to one or more feature components of the basic cell. The selected basic cell and the connection template are combined to generate a design file, wherein the design file corresponds to the desired I/O cell with the predetermined feature components of the basic cell integrated with the basic component to satisfy the configuration requirement. The disclosed method reduces the design cycle-time as well as circuit-library maintenance and update effort.