Abstract: Different isolation liners for different type FinFETs and associated isolation feature fabrication are disclosed herein. An exemplary method includes performing a fin etching process on a substrate to form first trenches defining first fins in a first region and second trenches defining second fins in a second region. An oxide liner is formed over the first fins in the first region and the second fins in the second region. A nitride liner is formed over the oxide liner in the first region and the second region. After removing the nitride liner from the first region, an isolation material is formed over the oxide liner and the nitride liner to fill the first trenches and the second trenches. The isolation material, the oxide liner, and the nitride liner are recessed to form first isolation features (isolation material and oxide liner) and second isolation features (isolation material, nitride liner, and oxide liner).

Abstract: In an aspect of the disclosure, a method, a computer-readable medium, and an apparatus are provided. The UE receives, from a source cell, a conditional handover (CHO) command configuring the UE to perform a CHO procedure to handover to a target cell in response to satisfying a CHO condition. The UE receives, from the source cell after receiving the CHO command, a handover (HO) command configuring the UE to perform a HO procedure to handover to the target cell. The UE determines whether the UE has started the CHO procedure prior to receiving the HO command. The UE, in response to determining that the UE has started the CHO procedure prior to receiving the HO command, discards the HO command and continues with the CHO procedure.

Abstract: A method of forming a semiconductor device includes forming a photoresist layer over a mask layer, patterning the photoresist layer, and forming an oxide layer on exposed surfaces of the patterned photoresist layer. The mask layer is patterned using the patterned photoresist layer as a mask.

Abstract: An outlier IC detection method includes acquiring first measured data of a first IC set, training the first measured data for establishing a training model, acquiring second measured data of a second IC set, generating predicted data of the second IC set by using the training model according to the second measured data, generating a bivariate dataset distribution of the second IC set according to the predicted data and the second measured data, acquiring a predetermined Mahalanobis distance on the bivariate dataset distribution of the second IC set, and identifying at least one outlier IC from the second IC set when at least one position of the at least one outlier IC on the bivariate dataset distribution is outside a range of the predetermined Mahalanobis distance.

Abstract: A discontinuous transmission (DTX) information transmission method is provided. The DTX information transmission method may include the following steps. A processor of an apparatus may determine whether to enter a DTX mode. A transceiver of the apparatus may transmit DTX information to a network node in response to determining to enter the DTX mode.

Abstract: An impeller includes a hub and a plurality of blades. The blades are arranged around the hub, and each blade includes a leading edge, a blade tip, a root portion, a trailing edge, a windward side and a leeward side. The windward side including a first turning point and a second turning point, a first vertical height difference is formed from the blade tip to the first turning point, and a second vertical height difference is formed from the first turning point to the second turning point, and the first vertical height difference is greater than the second vertical height difference. The impeller apparently reduces the noise.

Abstract: A method includes removing a first dummy gate structure to form a recess around a first nanostructure and a second nanostructure; depositing a sacrificial layer in the recess with a flowable chemical vapor deposition (CVD); and patterning the sacrificial layer to leave a portion of the sacrificial layer between the first nanostructure and the second nanostructure. The method further include depositing a first work function metal in first recess; removing the first work function metal and the portion of the sacrificial layer from the recess; depositing a second work function metal in the recess, wherein the second work function metal is of an opposite type than the first work function metal; and depositing a fill metal over the second work function metal in the recess.

Abstract: A communication receiver includes a first signal processing circuit and a second signal processing circuit. The first signal processing circuit includes a first feedforward equalizer and a decision circuit. The first feedforward equalizer processes a received signal to generate a first equalized signal. The decision circuit performs hard decision upon the first equalized signal to generate a first symbol decision signal. The second signal processing circuit includes a second feedforward equalizer, a decision feedforward equalizer, and a first decision feedback equalizer. The second feedforward equalizer processes the first equalized signal to generate a second equalized signal. The decision feedforward equalizer processes the first symbol decision signal to generate a third equalized signal. The first decision feedback equalizer generates a second symbol decision signal according to the second equalized signal and the third equalized signal.

Abstract: A connector assembly includes a base, a wire unit, and a wire fixing unit. The base includes a body and two side wings. The two side wings are respectively rotatably connected to two opposite sides of the body, and each of the side wings includes a first fixing portion. The wire unit is located between the two side wings. The wire unit includes a connection seat disposed in the body, and various wires disposed in the connection seat and protruding from one side of the connection seat. The wire fixing unit includes two second fixing portions and various through holes, in which the through holes are located between the two second fixing portions, the two first fixing portions respectively clamp the two second fixing portions, and the wires correspondingly pass through the through holes.

Abstract: A method includes forming a first transistor, which includes forming a first gate dielectric layer over a first channel region in a substrate and forming a first work-function layer over the first gate dielectric layer, wherein forming the first work-function layer includes depositing a work-function material using first process conditions to form the work-function material having a first proportion of different crystalline orientations and forming a second transistor, which includes forming a second gate dielectric layer over a second channel region in the substrate and forming a second work-function layer over the second gate dielectric layer, wherein forming the second work-function layer includes depositing the work-function material using second process conditions to form the work-function material having a second proportion of different crystalline orientations.

Abstract: Disclosed are a source driver and a method of detecting crack of a display panel. A source driver may comprise a first circuit configured to apply first data to data lines connected to sub-pixels of a display panel to charge a first driving voltage; and a second circuit formed on the display panel that applies the first driving voltage to a detection line formed on the display panel to detect the presence of cracks in the display panel based on the illumination status of the sub-pixels, wherein the detection line includes a first detection node and a second detection node formed on one side of the display panel along its extension direction, wherein the first detection node is connected to data lines of the first and third sub-pixels, and wherein the second detection node is connected to data line of the second sub-pixel.

Abstract: A method of forming a semiconductor structure includes the following operations. A semiconductor epitaxial layer is formed on a first semiconductor substrate. A first side of the semiconductor epitaxial layer is adhered to a transfer substrate by an adhesive layer covering the first side of the semiconductor epitaxial layer. The semiconductor epitaxial layer and the first semiconductor substrate are turned over by the transfer substrate. The first semiconductor substrate is removed to expose a second side of the semiconductor epitaxial layer opposite to the first side. A first semiconductor doped region is formed on the second side of the semiconductor epitaxial layer. After the first semiconductor doped region is formed, the adhesive layer and the transfer substrate are removed.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a channel layer, a barrier layer, a compound semiconductor layer, a gate electrode, and a stack of dielectric layers. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The compound semiconductor layer is disposed on the barrier layer. The gate electrode is disposed on the compound semiconductor layer. The stack of dielectric layers is disposed on the gate electrode. The stack of dielectric layers includes layers having different etching rates.

Abstract: A memory cell includes a memory device, a connecting structure, an insulating layer and a selector. The connecting structure is disposed on and electrically connected to the memory device. The insulating layer covers the memory device and the connecting structure. The selector is located on and electrically connected to the memory device, where the selector is disposed on the insulating layer and connected to the connecting structure by penetrating through the insulating layer.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a spacer adjacent to the MTJ, a liner adjacent to the spacer, and a first metal interconnection on the MTJ. Preferably, the first metal interconnection includes protrusions adjacent to two sides of the MTJ and a bottom surface of the protrusions contact the liner directly.

Abstract: A method of forming a semiconductor device includes forming a mask layer over a substrate and forming an opening in the mask layer. A gap-filling material is deposited in the opening. A plasma treatment is performed on the gap-filling material. The height of the gap-filling material is reduced. The mask layer is removed. The substrate is patterned using the gap-filling material as a mask.

Abstract: Compositions and methods for treating fibrosis using oligonucleotide-based therapies are provided. These therapies can be used to increase expression of Bone morphogenetic protein receptor type II (BMPR2) via inhibition of upstream Open Reading Frames, thereby reducing vasoconstriction, vascular remodeling, and formation of fibrosis, particularly pulmonary arterial fibrosis related in patients in need thereof.

Abstract: A computer-implemented method for generating video representations utilizing a hierarchical video encoder includes obtaining a video, wherein the video includes a plurality of frames, processing each of the plurality of frames with a machine-learned frame-level encoder model to respectively generate a plurality of frame representations for the plurality of frames, the plurality of frame representations respective to the plurality of frames determining a plurality of segment representations representative of a plurality of video segments including one or more of the plurality of frames, the plurality of segment representations based at least in part on the plurality of frame representations, processing the plurality of segment representations with a machine-learned segment-level encoder model to generate a plurality of contextualized segment representations, determining a video representation based at least in part on the plurality of contextualized segment representations, and providing the video representati

Abstract: The present disclosure provides a semiconductor structure and a method of manufacturing the same. The semiconductor structure includes a sensing device, a solar cell, and an interconnecting structure. The solar cell is disposed above the sensing device and is electrically connected to the sensing device. The interconnecting structure is disposed between the sensing device and the solar cell and has a first surface facing the solar cell and a second surface facing the sensing devices. The interconnecting structure comprises a first energy storage component and a second energy storage component. The first energy storage component is disposed closer to the first surface of the interconnecting structure than the second energy storage component.

Abstract: A gas detection purification device is disclosed and includes a main body, a purification unit, a gas guider, a gas detection module and a controlling-driving module. The main body includes an inlet, an outlet, an external socket and a gas-flow channel disposed between the inlet and the outlet. The purification unit is disposed in the gas-flow channel for filtering gas introduced through the gas-flow channel. The gas guider is disposed in the gas channel and located at a side of the purification unit. The gas is inhaled through the inlet, flows through the purification unit and is discharged out through the outlet. The gas detection module is plugged into or detached from the external socket. The controlling driving module is disposed within the main body and electrically connected to the gas guider to control the operation of the gas guider in an enabled state and a disabled state.