Abstract: A live broadcasting recording equipment, a live broadcasting recording system and a live broadcasting recording method are provided. The live broadcasting recording equipment includes a camera, a processing device, and a terminal device. The camera captures images to provide photographic data. The processing device executes background removal processing on the photographic data to generate a person image. The terminal device communicates with the processing device and has a display. The processing device executes multi-layer processing to fuse the person image, a three-dimensional virtual reality background image, an augmented reality object image, and a presentation image, and generate a composite image. After an application gateway of the processing device recognizes a login operation of the terminal device, the processing device outputs the composite image to the terminal device, so that the display of the terminal device displays the composite image.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a stacked gate structure, and a wall structure. The stacked gate structure is on the substrate and extending along a first direction. The wall structure is on the substrate and laterally aside the stacked gate structure. The wall structure extends along the first direction and a second direction perpendicular to the first direction. The stacked gate structure is overlapped with the wall structure in the first direction and the second direction.

Abstract: An antenna device and a method for configuring the same are provided. The antenna device includes a grounding metal, a grounding part, a radiating part, a feeding part, a proximity sensor, and a sensing metal. The radiating part is electrically connected to the grounding metal through the grounding part. The feeding part is coupled to the grounding metal through a feeding point. The sensing metal is electrically connected to the proximity sensor. The sensing metal is separated from the radiating part at a distance. The distance is less than or equal to one thousandth of a wavelength corresponding to an operating frequency of the antenna device.

Abstract: A method includes forming a dielectric layer over a substrate, the dielectric layer having a top surface; etching an opening in the dielectric layer; forming a bottom electrode within the opening, the bottom electrode including a barrier layer; forming a phase-change material (PCM) layer within the opening and on the bottom electrode, wherein a top surface of the PCM layer is level with or below the top surface of the dielectric layer; and forming a top electrode on the PCM layer.

Abstract: An input device for an information handling system ay detect an adjustment to a position of a damping medium of a linear magnetic ram of the input device. The input device may generate haptic feedback based on the detected adjustment to the position of the damping medium of the linear magnetic ram of the input device.

Abstract: A focal length adjustment mechanism, adapted for adjusting a focal length adjustment device located in a housing of a projector. The focal length adjustment mechanism includes a knob and a first stroke adjustment member. The first stroke adjustment member is located in the housing and includes a first end and a second end opposite to each other and a first pivot located between the first end and the second end. The first end is connected to the focal length adjustment device. The knob is connected to the second end. The knob rotates to drive the first stroke adjustment member to rotate around the first pivot. A distance between the first pivot and the first end is less than a distance between the first pivot and the second end, such that a movement path of the first end is less than a movement path of the second end.

Abstract: A sensing device includes a robotic hand, an electrode and a triboelectric sensing layer. The robotic hand includes at least one robot finger. One robot finger is integrated with an electrode layer which is functionalized with a triboelectric sensing layer. The triboelectric sensing layer is composed of plurality of nanostructures including Tellurium. The robot hand with triboelectric sensing layer undergoes contact and separation with the target analyte solution having mercury ions which leads to the formation of mercury telluride owing to the highly selective between of mercury ions to the Tellurium surface. After contacting with the target analyte, the electron transfer ability of the nanostructures attached to robot finger is altered. This process of contact electrification causes the induction of electrons to the electrode layer generating the triboelectric output voltage. The triboelectric output voltage is utilized to determine the concentration of mercury ions in the target analyte solution.

Abstract: A method includes depositing a first dielectric layer over a first conductive feature, depositing a first mask layer over the first dielectric layer, and depositing a second mask layer over the first mask layer. A first opening is patterned in the first mask layer and the second mask layer, the first opening having a first width. A second opening is patterned in a bottom surface of the first opening, the second opening extending into the first dielectric layer, the second opening having a second width. The second width is less than the first width. The first opening is extended into the first dielectric layer and the second opening is extended through the first dielectric layer to expose a top surface of the first conductive feature.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on one side of the of the MTJ, a second spacer on another side of the MTJ, a first metal interconnection on the MTJ, and a liner adjacent to the first spacer, the second spacer, and the first metal interconnection. Preferably, each of a top surface of the MTJ and a bottom surface of the first metal interconnection includes a planar surface and two sidewalls of the first metal interconnection are aligned with two sidewalls of the MTJ.

Abstract: A phase-change memory device and a method for fabricating the same are provided. The phase-change memory device comprises a first electrode, a stack and a multi-layered spacer. The first electrode is disposed on and electrically connected to an interconnect wiring of the interconnect structure. The stack is disposed on the first electrode and comprises a phase-change layer disposed on the first electrode and a second electrode disposed on the phase-change layer. The multi-layered spacer covers the stack. A first portion of the multi-layered spacer covers a top surface of the stack, and a second portion of the multi-layered spacer covers a sidewall of the stack.

Abstract: A semiconductor device according to the present disclosure includes a gate-all-around (GAA) transistor in a first device area and a fin-type field effect transistor (FinFET) in a second device area. The GAA transistor includes a plurality of vertically stacked channel members and a first gate structure over and around the plurality of vertically stacked channel members. The FinFET includes a fin-shaped channel member and a second gate structure over the fin-shaped channel member. The fin-shaped channel member includes semiconductor layers interleaved by sacrificial layers.

Abstract: A system and method for maximizing bandwidth in an uplink for a 5G communication system is disclosed. Multiple end devices generate image streams. A gateway is coupled to the end devices. The gateway includes a gateway monitor agent collecting utilization rate data of the gateway and an image inspector collecting inspection data from the received image streams. An edge server is coupled to the gateway. The edge server includes an edge server monitor agent collecting utilization rate data of the edge server. An analytics manager is coupled to the gateway and the edge server. The analytics manager is configured to determine an allocation strategy based on the collected utilization rate data from the gateway and the edge server.

Abstract: A device includes a semiconductor fin, and a gate stack on sidewalls and a top surface of the semiconductor fin. The gate stack includes a high-k dielectric layer, a work-function layer overlapping a bottom portion of the high-k dielectric layer, and a blocking layer overlapping a second bottom portion of the work-function layer. A low-resistance metal layer overlaps and contacts the work-function layer and the blocking layer. The low-resistance metal layer has a resistivity value lower than second resistivity values of both of the work-function layer and the blocking layer. A gate spacer contacts a sidewall of the gate stack.

Abstract: An antenna apparatus includes a feeding antenna inside an electronic device and one or more antenna elements, such as a floating metal antenna, disposed on a rear cover of the electronic device. The floating metal antenna and a feeding antenna inside the electronic device may form a coupling antenna structure. The feeding antenna may be an antenna fastened on an antenna support (which may be referred to as a support antenna). The feeding antenna may alternatively be a slot antenna formed by slitting on a metal middle frame of the electronic device. The antenna apparatus may be implemented in limited design space, thereby effectively saving antenna design space inside the electronic device. The antenna apparatus may generate excitation of a plurality of resonance modes, so that antenna bandwidth and radiation characteristics can be improved.

Abstract: A method of making a semiconductor structure includes forming a first contact pad over an interconnect structure. The method further includes forming a second contact pad over the interconnect structure, wherein the second contact pad is electrically separated from the first contact pad. The method further includes depositing a first buffer layer over the interconnect structure, wherein the first buffer layer partially covers the second contact pad, and an edge of the second contact pad extends beyond the first buffer layer.

Abstract: A manufacturing method of miniature fluid actuator is disclosed and includes the following steps. A flow-channel main body manufactured by a CMOS process is provided, and an actuating unit is formed by a deposition process, a photolithography process and an etching process. Then, at least one flow channel is formed by etching, and a vibration layer and a central through hole are formed by a photolithography process and an etching process. After that, an orifice layer is provided to form at least one outflow opening by an etching process, and then a chamber is formed by rolling a dry film material on the orifice layer. Finally, the orifice layer and the flow-channel main body are flip-chip aligned and hot-pressed, and then the miniature fluid actuator is obtained by a flip-chip alignment process and a hot pressing process.

Abstract: A method for switching between different RATs is provided. The method is executed by a mobile communications device camping on a first cell using a first Radio Access Technology (RAT). The method includes: determining, by a controller of the mobile communications device, a data transmission rate of the mobile communications device in the first cell; sending, by the controller, a first measurement report according to the determined data transmission rate, wherein the first measurement report is intended to trigger a handover procedure initiated by the first cell or to release a radio resource control (RRC) connection; and switching, by the controller, to camp on a second cell using a second RAT via the handover procedure or a local releasing procedure after the sending of the first measurement report.

Abstract: A filtration and purification processing method includes following steps: (1) providing a filtration and purification device; (2) performing a gas introduction, filtration, and detection procedure; (3) performing a detection and determination procedure to the purified gas; (4) performing a circulating filtration and detection procedure to the purified gas; and (5) repeating filtration and purification procedures to the purified gas several times and guiding out the purified gas.

Abstract: A fan includes a frame, an impeller, a driving assembly and a circuit board. The frame includes an inlet, an outlet, a first accommodation space, a base and a second accommodation space, wherein the inlet and the outlet are disposed at opposite sides of the frame, and the first accommodation space is separated from the second accommodation space. The impeller is disposed in the first accommodation space and on the base. The driving assembly is disposed between the base and the impeller. The circuit board is disposed in the second accommodation space. The base includes plural first through holes, and the impeller includes plural second through holes. During the fan is operating, a first airflow is formed to flow from the inlet to the outlet, and a second airflow is formed to flow through the driving assembly via the plural first through holes and the plural second through holes.

Abstract: A health monitoring device having gas detection function is disclosed. The health monitoring device includes a main body. The main body has at least one inlet and at least one outlet, and includes a gas detection module. The gas detection module includes a piezoelectric actuator and at least one sensor. Gas is inhaled into the main body through the inlet by the piezoelectric actuator, is discharged out through the outlet, and is transported to the at least one sensor to be detected so as to obtain gas information.