Abstract: A surface covering is provided. The surface covering is made of a composition of a polymer a bio-based plasticizer, a stabilizer, and a co-stabilizer.

Abstract: The present disclosure provides an LED display module and an LED display device. The LED display module includes a display module body and a lock. The lock includes: a lock seat arranged on a rear side of the display module body; a lock cylinder rotatably arranged in the lock seat; a locking member; an interference member rotatably sleeved on the lock cylinder and spaced apart from the locking member along the axial direction of the lock cylinder, the interference member having an interference position where the interference member locates on a front side of a connecting beam for lifting up the display module body and an avoidance position where the interference member avoids the connecting beam; and an elastic linkage member arranged between the locking member and the interference member. When the locking member is in an unlocking position, the interference member is driven to an interference position by the elastic linkage member.

Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated chip structure. The method may be performed by forming a plurality of interconnect layers within a first interconnect structure disposed over an upper surface of a first semiconductor substrate. An edge trimming process is performed to remove parts of the first interconnect structure and the first semiconductor substrate along a perimeter of the first semiconductor substrate. The edge trimming process results in the first semiconductor substrate having a recessed surface coupled to the upper surface by way of an interior sidewall disposed directly over the first semiconductor substrate. A dielectric capping structure is formed onto a sidewall of the first interconnect structure after performing the edge trimming process.

Abstract: A thin film transistor and method of making the same, the thin film transistor including: a substrate; a word line disposed on the substrate; a semiconductor layer disposed on the substrate, the semiconductor layer having a source region, a drain region, and a channel region disposed between the source and drain regions and overlapping with the word line in a vertical direction perpendicular to a plane of the substrate; a hydrogen diffusion barrier layer overlapping with the channel region in the vertical direction; a gate dielectric layer disposed between the channel region and the word line; and source and drain electrodes respectively electrically coupled to the source and drain regions.

Abstract: A device includes a memory array, bit line pairs, word lines, a modulation circuit and a control signal generator. The memory array has bit cells arranged in rows and columns. Each bit line pair is connected to a respective column of bit cells. Each word line is connected to a respective row of bit cells. The modulation circuit is coupled with at least one bit line pair. The control signal generator is coupled with the modulation circuit. The control signal generator includes a tracking wiring with a tracking length positively correlated with a depth distance of the word lines. The control signal generator is configured to produce a control signal, switching to a first voltage level for a first time duration in reference with the tracking length, for controlling the modulation circuit. A method of controlling aforesaid device is also disclosed.

Abstract: Semiconductor device structures having metal gate structures with tunable work function values are provided. In one example, a first gate structure and a second gate structure formed on a substrate, wherein the first gate structure includes a first work function metal having a first material, and the second gate structure includes a second work function metal having a second material, the first material being different from the second material, wherein the first gate structure further includes a gate dielectric layer, a self-protective layer having metal phosphate, and the first work function metal on the self-protective layer.

Abstract: A method for manufacturing a semiconductor device includes: providing a wafer-bonding stack structure having a sidewall layer and an exposed first component layer; forming a photoresist layer on the first component layer; performing an edge trimming process to at least remove the sidewall layer; and removing the photoresist layer. In this way, contaminant particles generated from the blade during the edge trimming process may fall on the photoresist layer but not fall on the first component layer, so as to protect the first component layer from being contaminated.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above- mentioned memory device is also provided.

Abstract: The embodiments of the present disclosure provide booster mechanisms suitable for a liquid container. The booster mechanism may include a liquid storage assembly. A tail end of the liquid storage assembly may be provided with a strike space. The strike space may be provided with a movable assembly. The movable assembly may be capable of performing an axial movement along the strike space. The tail end of the movable assembly may be provided with a booster assembly and a deformation space. A front end of the booster assembly may be provided with a deformation trigger assembly. A deformation gap may be between the deformation space and the deformation trigger assembly.

Abstract: Embodiments of the present disclosure provide a method for activating at least a first edge server and a second edge server. The first edge server includes a first service processor, and the second edge server includes a second service processor. The method includes establishing a data communication connection between the first service processor and the second service processor, establishing a data communication connection between the first service processor and a specified website, establishing a trusted communication between the first service processor and the specified website, establishing a trusted communication between the first service processor and the second service processor, obtaining an activation right from the specified website by the first service processor, and performing the activation right to activate the first edge server and the second edge server by the first service processor.

Abstract: The three-state spintronic device includes: a bottom electrode, a magnetic tunnel junction and a top electrode from bottom to top. The magnetic tunnel junction includes: a spin-orbit coupling layer, a ferromagnetic free layer, a barrier tunneling layer, a ferromagnetic reference layer, three local magnetic domain wall pinning centers and domain wall nucleation centers. An antisymmetric exchange interaction is modulated, and the magnetic domain wall pinning centers are embedded in an interface between a heavy metal and the ferromagnetic free layer. The magnetic domain wall nucleation centers are at two ends of the ferromagnetic free layer. A current pulse flows through the spin-orbit coupling layer to generate a spin current and the spin current is injected into the ferromagnetic free layer. Under a control of all-electrical controlled, an effective field of a spin-orbit torque drives domain wall to move and displace.

Abstract: The present disclosure provides antibodies and antibody fragments thereof that bind to human TNFR2. The disclosed antibodies, inhibit the TNF-TNFR2 signaling axis and enhance cytokine secretion in T effector cells and are therefore useful for the treatment of cancer, either alone or in combination with other agents.

Abstract: A method of forming the semiconductor device is provided. The method includes following steps. A memory structure is formed over a first conductive line over a substrate and is electrically connected to the first conductive line. A sacrificial layer is formed on the memory structure. A spacer layer is formed to cover the memory structure and the sacrificial layer. A first dielectric layer is formed to cover the spacer layer. A planarization process is performed to remove a portion of the first dielectric layer. A second dielectric layer is formed on the spacer layer and the first dielectric layer. A patterning process is performed to form an opening exposing a portion of the top surface of the sacrificial layer. The sacrificial layer is removed to form a recess. A second conductive line is formed in the opening and the recess to be electrically coupled to the memory structure.

Abstract: Embodiments are generally directed to methods and apparatuses for determining a frontal body orientation. An embodiment of a method for determining a three-dimensional (3D) orientation of frontal body of a player comprises: detecting each of a plurality of players in each of a plurality of frames captured by a plurality of cameras; for each of the plurality of cameras, tracking each of the plurality of players between continuous frames captured by the camera; and associating the plurality of frames captured by the plurality of cameras to generate the 3D orientation of each of the plurality of players.

Abstract: Disclosed are an image encoding and decoding method, image processing device, and computer storage medium. the image coding method includes: when copying coding is performed on a current coding block by using one of the at least two different palette and pixel string copying coding manners, generating a new palette color according to pixels of the current coding block; generating a palette for the current coding block according to the new palette color and a palette color candidate set shared by the at least two different palette and pixel string copying coding manners; and performing palette and pixel string copying coding by using the palette for the current coding block, and generating a video bitstream comprising a copying manner and a copying parameter.

Abstract: An information sharing method includes that a first redundancy device generates a first supervision frame that includes device information of the first redundancy device, where the first supervision frame detects whether a second redundancy device on a transmission link on which the first redundancy device is located in the redundancy network is in a working state, where the first redundancy device is any redundancy device in the redundancy network; and where the first redundancy device sends the first supervision frame to the second redundancy device in a multicast manner. The device information of the redundancy device is carried in the supervision frame.

Abstract: Present disclosure provides a semiconductor structure, including a semiconductor fin having a first portion and a second portion over the first portion, a first conductive region abutting a first lateral surface of the first portion and a first lateral surface of the second portion, a metal gate having a bottom portion and an upper portion, the bottom portion being between the first portion and the second portion of the semiconductor fin, and the upper portion being over the second portion of the semiconductor fin, and a first spacer between the bottom portion of the metal gate and the first conductive region. A method for manufacturing the semiconductor structure described herein is also provided.

Abstract: Various disclosed embodiments include illustrative controller modules, direct current (DC) fast charging devices, and methods. In an illustrative embodiment, a controller module for a DC-DC converter includes a controller and computer-readable media configured to store computer-executable instructions configured to cause the controller to receive an input voltage Vin to the DC-DC converter, receive an output DC voltage Vo from the DC-DC converter, generate control signals configured to control a charging output of the DC-DC converter responsive to the received input voltage Vin and output voltage Vo, and output the generated control signals to the DC-DC converter.

Abstract: The invention provides compositions and methods for treating diseases associated with expression of CD20 or CD22. The invention also relates to chimeric antigen receptor (CAR) specific to CD20 or CD22, vectors encoding the same, and recombinant T or natural killer (NK) cells comprising the CD20 CAR or CD22 CAR. The invention also includes methods of administering a genetically modified T cell or NK cell expressing a CAR that comprises a CD20 or CD22 binding domain.