Abstract: An air gun including: a cylinder, a cartridge, an air valve, a stop piece. The air valve includes an assembly channel, a communication port, and an air passage connected to the assembly channel through the communication port. The cartridge is disposed in the assembly channel and includes an ejection channel communicating with the air passage through the communication port. The stop piece is disposed on the air valve to push the cartridge towards the communication port, thereby locking the cartridge onto the air valve, and tightly fitting the cartridge and the air valve at least at an outer circumference of the communication port.

Abstract: A package structure is provided. The package structure includes a substrate, an electrode layer, a lighting unit, a wall, and a package compound. The substrate and the wall that is disposed on the substrate jointly define an accommodating space. The lighting unit in the accommodating space and is electrically connected to the electrode layer disposed on the substrate. The package compound covers the electrode layer, and the lighting unit. The package compound includes an attaching portion disposed on a top surface of the lighting unit and a surrounding portion that is arranged around the attaching portion. The surrounding portion has an annular slot arranged on a top surface thereof. A bottom end of the annular slot is located at a position aligning with 25%˜90% of a thickness of the lighting diode along a height direction.

Abstract: This application provides a communications method and a communications apparatus. A first station in a first multi-link device sends first information to a second multi-link device, where the first information is used to indicate a frequency at which how often a station in a power saving mode in the first multi-link device receives a beacon frame. In this way, the second multi-link device may learn about, based on the first information, how often a frequency at which a station in the first multi-link device receives a beacon frame, thereby helping the second multi-link device effectively manage a cache service of each station in the first multi-link device and manage a data buffer space.

Abstract: A method of manufacturing semiconductor device includes forming a multilayer photoresist structure including a metal-containing photoresist over a substrate. The multilayer photoresist structure includes two or more metal-containing photoresist layers having different physical parameters. The metal-containing photoresist is a reaction product of a first precursor and a second precursor, and each layer of the multilayer photoresist structure is formed using different photoresist layer formation parameters. The different photoresist layer formation parameters are one or more selected from the group consisting of the first precursor, an amount of the first precursor, the second precursor, an amount of the second precursor, a length of time each photoresist layer formation operation, and heating conditions of the photoresist layers.

Abstract: Method of manufacturing semiconductor device includes forming photoresist layer over substrate. Forming photoresist layer includes combining first precursor and second precursor in vapor state to form photoresist material, wherein first precursor is organometallic having formula: MaRbXc, where M at least one of Sn, Bi, Sb, In, Te, Ti, Zr, Hf, V, Co, Mo, W, Al, Ga, Si, Ge, P, As, Y, La, Ce, Lu; R is substituted or unsubstituted alkyl, alkenyl, carboxylate group; X is halide or sulfonate group; and 1?a?2, b?1, c?1, and b+c?5. Second precursor is at least one of an amine, a borane, a phosphine. Forming photoresist layer includes depositing photoresist material over the substrate. The photoresist layer is selectively exposed to actinic radiation to form latent pattern, and the latent pattern is developed by applying developer to selectively exposed photoresist layer to form pattern.

Abstract: The present application discloses a light-emitting device comprises a semiconductor light-emitting element, a transparent element covering the semiconductor light-emitting element, an insulating layer which connects to the transparent element, an intermediate layer which connects to the insulating layer; and a conductive adhesive material connecting to the intermediate layer.

Abstract: A semiconductor package includes a carrier substrate comprising a first surface and a second surface opposite to the first surface. A first electronic component and a second electronic component are mounted on the first surface of the carrier substrate in a side-by-side manner. The first electronic component is provided with first data (DQ) pads along a first side directly facing the second electronic component. The second electronic component is provided with second data (DQ) pads along a second side in proximity to the first electronic component. The first DQ pads are directly connects to the second DQ pads through first bond wires.

Abstract: The present disclosure proposes a method, apparatus and computer program product for sentence representation generation for cross-lingual retrieval. A target sentence may be obtained. An initial target sentence representation of the target sentence may be generated through an encoder, the encoder pretrained through a contrastive context prediction mechanism. A target sentence representation of the target sentence for cross-lingual retrieval may be generated based on the initial target sentence representation through cross-lingual calibration.

Abstract: A process chamber and method of modulating thin film growth on a wafer using a plasma-enhanced chemical vapor deposition (PECVD) process is described. During a first deposition phase, a first portion of a film is disposed on a wafer on a pedestal in a process chamber. During a second deposition phase, a second portion of the film is deposited on the wafer. The wafer is unclamped from the pedestal prior to the first and/or second deposition phase and remains unclamped during the first and/or second deposition phase. The wafer has a non-zero wafer bow during unclamped deposition phase to provide a radially non-uniform thickness profile of the film on the wafer.

Abstract: A method includes depositing a first work function layer over a first and second gate trench. The method includes depositing a second work function layer over the first work function layer. The method includes etching the second work function layer in the first gate trench while covering the second work function layer in the second gate trench, causing the first work function layer in the first gate trench to contain metal dopants that are left from the second work function layer etched in the first gate trench. The method includes forming a first active gate structure and second active gate structure, which include the first work function layer and the metal dopants left from the second work function layer in the first gate trench, and the first work function layer and no metal dopants left behind from the second work function layer, respectively.

Abstract: This application provides a communication method and apparatus, and relates to the field of communication technologies. An AP generates a trigger frame, where the trigger frame includes a first user information field, a part or all of a frequency domain resource indicated by a resource unit allocation subfield in a fourth user information field before the first user information field is located on a primary 160 MHz channel, and a part or all of a frequency domain resource indicated by a resource unit allocation subfield in a fourth user information field after the first user information field is located on a secondary 160 MHz channel. Then, the AP sends the trigger frame.

Abstract: An electronic device includes a substrate, a sidewall, a plurality of light emitting elements and an optical element. The sidewall is connected to the substrate. The plurality of light emitting elements are disposed on the substrate. The optical element covers at least two of the plurality of light emitting elements, wherein, in a cross-sectional view of the electronic device, a portion of the optical element is disposed between two adjacent ones of the plurality of light emitting elements, and a height of the sidewall is greater than a thickness of the optical element.

Abstract: A hydrocarbon resin polymer including a repeating unit (A) is derived from dicyclopentadiene (DCPD). The hydrocarbon resin polymer has a fluorine substituent, and the content of the fluorine substituent is 100 to 4500 ppm based on the total weight of the hydrocarbon resin polymer. A manufacturing method of the above hydrocarbon resin polymer. The manufacturing method includes polymerizing a mixture in the presence of a fluorine-containing compound, wherein the fluorine-containing compound is a boron trifluoride complex and the mixture includes a dicyclopentadiene. A substrate structure includes a resin layer, and a conductive layer disposed on the resin layer. The resin layer is formed from a resin composition including the above hydrocarbon resin polymer using a cross-linking process.

Abstract: A method for removing inorganic substances from wastewater is provided. The method includes: providing a fluidized bed reactor, wherein carriers are added into the fluidized bed reactor, and the carriers includes polyvinylidene fluoride (PVDF), ethylene tetrafluoroethylene (ETFE), alumina (Al2O3) with purity more than 95 wt %, or combinations thereof; introducing the wastewater containing the inorganic substances and a first reagent into the fluidized bed reactor; fluidizing the carriers in the fluidized bed reactor, and making the inorganic substances in the wastewater reacting with the first reagent to form crystals, wherein the crystals are formed on the outer surfaces of the carriers.

Abstract: An optical sensor includes a light source emitting signal light, a light sensing element on an optical path of the signal light, and a photoelectric conversion element on a side of the light sensing element away from the light source. The light sensing element is used to receive ambient light and the signal light on one side and transmit an incident light on another side, wherein a transmittance of the light sensing element changes according to an intensity of the ambient light to adjust an intensity of the incident light transmitted from the light sensing element. The photoelectric conversion element is configured to receive the incident light transmitted from the light sensing element, and to output a voltage modulation signal according to the incident light. A glasses is also provided.

Abstract: A semiconductor package includes a semiconductor device, an encapsulating material, a redistribution structure, and an adhesive residue. The encapsulating material encapsulates a first part of a side surface of the semiconductor device. The redistribution structure is disposed over the semiconductor device and a first side of the encapsulating material. The adhesive residue is disposed over a second side of the encapsulating material opposite to the first side and surrounding the semiconductor device, wherein the adhesive residue encapsulates a second part of the side surface of the semiconductor device.

Abstract: A first plurality of roofing shingles installed in a first plurality of rows on a roof deck, and a second plurality of roofing shingles installed in a second plurality of rows. An edge of one of the second roofing shingles in each of the second rows is offset from the edge of another one of the second roofing shingles in another adjacent one of the second rows. An edge of a first photovoltaic shingle is juxtaposed with the edge of a first roofing shingle of the second roofing shingles in a first row of the second rows. The edge of at least another photovoltaic shingle in at least one of another row of the second rows is substantially aligned with the edge of the first photovoltaic shingle. An additional roofing shingle is installed intermediate one of the second roofing shingles and one of the photovoltaic shingles.

Abstract: A display panel includes a first substrate and a shading structure. The shading structure is disposed on the first substrate. The shading structure includes a plurality of first parts and a second part. One of the plurality of first parts extends along a first direction. The second part protrudes from the one of the plurality of first part. Wherein the second part is separated from another one of the plurality of first parts adjacent to the one of the plurality of first parts, and the another one of the plurality of first parts extends along the first direction.

Abstract: A method for manufacturing an electronic device is provided. The method includes providing a first substrate. The method further includes forming a bank layer on the first substrate. The bank layer includes a bank wall and a first opening, and the first opening adjacent to the bank wall. The method further includes forming a light conversion layer in the first opening. The method further includes forming a spacer on the bank wall. The method further includes providing a second substrate. The method further includes transferring a plurality of electronic units to the second substrate. The method further includes overlapping the first substrate and second substrate, so that the spacer is located between the first substrate and the second substrate.

Abstract: A method of forming an electronic device including: providing an assembly, wherein the assembly includes a substrate, an optical film, a plurality of color filters and a defect, wherein the plurality of color filters and the defect are disposed between the substrate and the optical film; and using a laser pulse to form a first processed area that corresponds to the defect in the optical film, wherein the first processed area at least partially overlaps at least two of the plurality of color filters.