Abstract: Provided is a composition that includes a wax combined with a nanocellulose. The composition can be applied to a substrate leading to a better wax coverage with reduced porosity that provides for improved oil, grease, gas, water, and water vapor barrier properties to the coated articles.

Abstract: The three-state spintronic device includes: a bottom electrode, a magnetic tunnel junction and a top electrode from bottom to top. The magnetic tunnel junction includes: a spin-orbit coupling layer, a ferromagnetic free layer, a barrier tunneling layer, a ferromagnetic reference layer, three local magnetic domain wall pinning centers and domain wall nucleation centers. An antisymmetric exchange interaction is modulated, and the magnetic domain wall pinning centers are embedded in an interface between a heavy metal and the ferromagnetic free layer. The magnetic domain wall nucleation centers are at two ends of the ferromagnetic free layer. A current pulse flows through the spin-orbit coupling layer to generate a spin current and the spin current is injected into the ferromagnetic free layer. Under a control of all-electrical controlled, an effective field of a spin-orbit torque drives domain wall to move and displace.

Abstract: A first packet flow and a second packet flow support a first protocol, a third packet flow and a fourth packet flow support a second protocol, and a priority of the first protocol is lower than a priority of the second protocol. The first packet flow and the third packet flow are transmitted from a first ingress port to a first egress port. The second packet flow and the fourth packet flow are transmitted from a second ingress port to a second egress port. When the packet processing device is in a congested state, a bandwidth modulator performs a first suppression process on the first packet flow at the first ingress port, and the bandwidth modulator performs a second suppression process on the second packet flow at the second egress port or on the third packet flow at the first ingress port.

Abstract: An embedded flash memory structure, including a semiconductor substrate, an erase gate on the semiconductor substrate, two floating gates respectively at two sides of the erase gate on the semiconductor substrate, two word lines respectively at outer sides of the two floating gates, and two metal control gates respectively on the two floating gates, wherein a sacrificial layer is at at least one side of the metal control gate, and the sacrificial layer is between the metal control gate and the erase gate or between the metal control gate and the word line.

Abstract: A method may include obtaining parameter information of a plurality of acquisition devices that communicate with the system to transmit video data to the system. The parameter information of each of the plurality of acquisition device may include transmission information of a target key frame of the video data of the acquisition device. The method may also include determining, based on the parameter information, whether there are collision key frames in the target key frames of the plurality of acquisition devices. The method may also include adjusting an original generation time of at least one of the collision key frames in response to determining that there are collision key frames, so that after the adjustment, there is no collision key frame in the target key frames of the plurality of acquisition devices.

Abstract: The present disclosure provides a method for fabricating an anti-reflective layer on a quartz surface by using a metal-induced self-masking etching technique, comprising: performing reactive ion etching to a metal material and a quartz substrate by using a mixed gas containing a fluorine-based gas, wherein metal atoms and/or ions of the metal material are sputtered to a surface of the quartz substrate, to form a non-volatile metal fluoride on the surface of the quartz substrate; forming a micromask by a product of etching generated by reactive ion etching gathering around the non-volatile metal fluoride; and etching the micromask and the quartz substrate simultaneously, to form an anti-reflective layer having a sub-wavelength structure.

Abstract: A device control method, a memory storage device, and a memory control circuit unit are disclosed. The method includes: establishing a connection between the memory storage device and a host system; performing a first communication with the host system based on the connection and a first connection interface standard; performing a data recovery operation between the memory storage device and the host system via the connection during a period of performing the first communication; and switching to perform a second communication with the host system based on the connection and a second connection interface standard in a case that the data recovery operation is successfully performed, wherein the first connection interface standard is different from the second connection interface standard.

Abstract: Some implementations described herein provide an etch tool having a nozzle component. The nozzle component (e.g., a gas injector component) includes a spinel-based composite material that has an increased resistivity to damage and/or debris generation within the etch tool during a plasma-based etch operation that etches material from a semiconductor substrate. The increased resistivity may decrease contamination within the etch tool to increase a yield of integrated circuit devices on the semiconductor substrate relative to another semiconductor substrate that is etched using another etch tool having another nozzle component of another material.

Abstract: The present disclosure provides a device and a method for measuring levelness of a top cover of a reactor pressure vessel. The device includes a mounting and fixing mechanism, an inclination sensor mounting base, and an inclination sensor. The mounting and fixing mechanism includes a mounting bottom plate, and a fixing mechanism disposed on the mounting bottom plate. The inclination sensor mounting base includes a bearing plate located on the mounting bottom plate, and a portal frame disposed on the bearing plate and having a top surface. The inclination sensor is mounted on a sensor mounting surface of the bearing plate and located in the portal frame, and configured to obtain levelness of the sealing surface of the top cover by measuring levelness of the sensor mounting surface of the bearing plate.

Abstract: The present disclosure provides a device and a method for measuring levelness of a top cover of a reactor pressure vessel. The device includes a mounting and fixing mechanism, an inclination sensor mounting base, and an inclination sensor. The mounting and fixing mechanism includes a mounting bottom plate, and a fixing mechanism disposed on the mounting bottom plate. The inclination sensor mounting base includes a bearing plate located on the mounting bottom plate, and a portal frame disposed on the bearing plate and having a top surface. The inclination sensor is mounted on a sensor mounting surface of the bearing plate and located in the portal frame, and configured to obtain levelness of the sealing surface of the top cover by measuring levelness of the sensor mounting surface of the bearing plate.

Abstract: Embodiments of the present invention disclose a battery switch on circuit and a lithium battery. The circuit includes a communication control module, a relay, a communication control circuit, a switch, and a communication connection terminal. A communication signal terminal of the communication control module is connected to a first contact of the relay, a common contact of the relay is connected to the communication connection terminal. A coil of the relay is powered on to control the common contact and the first contact to be gated and is powered down to control the common contact and a second contact of the relay to be gated. The communication connection terminal is configured to connect to an upper computer. The switch includes a first terminal, a second terminal, and a control terminal. A signal from the control terminal of the switch is capable of controlling conduction or disconnection between the first terminal and the second terminal.

Abstract: A semiconductor structure includes a substrate, a gate structure, a first oxide layer, and a second oxide layer. The substrate has a trench. An inclined surface and a bottom surface of the trench have an obtuse angle therebetween. The gate structure is located in the trench. A width of a bottom surface of the gate structure is less than a width of a top surface of the gate structure. A cross-sectional profile of the gate structure is inverted trapezoid. The first oxide layer is located between the gate structure and the substrate. The second oxide layer is located on the top surface of the gate structure.

Abstract: The present disclosure provides a refrigerator and a refrigerator air duct purification system and belongs to the field of refrigerator purification technologies. A refrigeration air duct front foam is fixed at a rear side of a refrigeration air duct backplate. A light-source-oriented light transmission assembly is disposed at a front side of the refrigeration air duct backplate. An air outlet penetrating back and forth is disposed on the refrigeration air duct front foam, the refrigeration air duct backplate and the light-source-oriented light transmission assembly. An outlet air end of the air outlet is in communication with the refrigeration chamber. In a main air duct are disposed an ion generator, an air quality sensor, and an ethylene concentration sensor. A control board is initially in a determination state to determine by a door opening/closing sensor whether a refrigeration door is opened, and if the refrigeration door is opened, start up an ion purification mode.

Abstract: There is provided a wobble plate piston water pump including: a pump body defining a plurality of channels; a rotatable wobble plate disposed in the pump body; a plurality of pistons each located in a respective one of the plurality of channels, the pistons being reciprocatable within the channel along a piston axis; a water passage defined by a water inlet and a water outlet; and a plurality of inlet check valves, each associated with one of the channels, and positioned between the water inlet and the associated channel, the inlet check valves reciprocate along an axis parallel to the piston axis to transition between closed states and open states.

Abstract: The present disclosure provides a hair cutting assembly, a cleaning device and a cutting control method, and the hair cutting assembly includes a housing; a rolling brush connected to the housing, and the rolling brush comprises a rotating axis and is able to rotate with respect to the housing along the rotating axis; a fixed blade, connected to the housing, and the fixed blade is fixed relative to the housing; a movable blade, connected to the housing, and the movable blade can move with respect to the fixed blade, the movable blade abuts on the fixed blade and the fixed blade is adjacent to the movable blade with respect to the circumferential direction of the rolling brush.

Abstract: A semiconductor device includes a first diode having a first cathode and a first anode, wherein the first cathode is floating. The semiconductor device includes a second diode having a second cathode and a second anode, wherein the first anode is coupled to the second anode with the second cathode connected to a first supply voltage. The semiconductor device includes a third diode having a third cathode and a third anode, wherein the third cathode is connected to the first anode at an input/output pin, with the third anode connected to a second supply voltage. The second anode is coupled to a circuit that is powered by the first supply voltage and the second supply voltage. The first diode has a first size and the second diode has a second size, and the first size is substantially greater than the second size.

Abstract: The present invention provides a fluorescent diamond containing an MV center emitting fluorescence at a concentration of 1×1014/cm3 or higher, where M represents a metal or metalloid, and V represents a vacancy.

Abstract: A complementary storage unit and a method of preparing the same, and a complementary memory. The complementary storage unit includes: a control transistor, a pull-up diode and a pull-down diode. The control transistor is configured to control reading and writing of the storage unit. One end of the pull-up diode is connected to a positive selection line, and the other end thereof is connected to a source end of the control transistor, so as to control a high-level input. One end of the pull-down diode is connected to a negative selection line, and the other end thereof is connected to the source end of the control transistor, so as to control a low-level input. The pull-up diode and the pull-down diode are symmetrically arranged in a first direction.