Abstract: A semiconductor substrate is provided having an insulator thereon with a semiconductor layer on the insulator. A deep trench isolation is formed, introducing strain to the semiconductor layer. A gate dielectric and a gate are formed on the semiconductor layer. A spacer is formed around the gate, and the semiconductor layer and the insulator are removed outside the spacer. Recessed source/drain are formed outside the spacer.

Abstract: A method and apparatus to enhance magnetoimpedance effect using magnetomechanical resonance are described.

Abstract: A lateral double diffused metal oxide semiconductor (LDMOS) device includes forming a plurality of wells on a semiconductor substrate. The plurality of wells include a first well of a first type, a second well of a second type opposite to the first type, and a third well of the first type. The device includes a gate to control flow from current from a source to a drain. Highly doped regions of the first type provide contacts for the source and the drain. The third well, which is disposed in between the second well, is formed directly below the highly doped region. The third well causes an energy barrier at the source to decrease, thereby resulting in lowering a threshold voltage of the LDMOS device compared to the LDMOS device without the third well.

Abstract: An exemplary embodiment relates to a method for forming a metal oxide semiconductor field effect transistor (MOSFET). The method includes providing a substrate having a gate formed above the substrate and performing at least one of the following depositing steps: depositing a spacer layer and forming a spacer around a gate and gate insulator located above a layer of silicon above the substrate; depositing an etch stop layer above the spacer, the gate, and the layer of silicon; and depositing a dielectric layer above the etch stop layer. At least one of the depositing a spacer layer, depositing an etch stop layer, and depositing a dielectric layer comprises high compression deposition which increases in tensile strain in the layer of silicon.

Abstract: An improved pigment spacing composition and method of manufacture. A coating composition wherein the pigment particles are spaced more uniformly resulting in improved coating properties. In another embodiment, the present invention relates to a composition having nanoparticles interacting with pigmentary titanium dioxide to provide for more uniform spacing of the titanium dioxide.

Abstract: A lateral double diffused metal oxide semiconductor (LDMOS) device includes a gate to control the device, a drain coupled to the gate formed in a well of a first type, a source to form a current path with the drain, and a first field oxide region disposed between the gate and the drain. The gate is formed over a first portion of the well of the first type and a channel portion of the well of the second type. The LDMOS also includes a second field oxide region, which is disposed between the edges of the drain and the well of the second type. A dummy polysilicon layer, which is formed to cover approximately one half of the second field oxide with a remaining portion of the dummy polysilicon layer covering a second portion of the well of the second type, reduces the electric field in the drift region.

Abstract: The present invention provides increased stain resistance, tannin blocking, adhesion, and various other properties. A composition in accordance with the principles of the present invention comprises at least two binders, nanoparticle pigment, and pigmentary titanium dioxide. In one embodiment, the present invention relates to a coating on a substrate wherein the coating has two binders, nanoparticle metal oxide pigment, and pigmentary titanium dioxide. Various additives may be included to formulate paint as known in the art.

Abstract: A method of manufacturing an integrated circuit (IC) utilizes a shallow trench isolation (STI) technique. The shallow trench isolation technique is used in a strained silicon (SMOS) process. The liner for the trench is formed from a layer deposited in a low temperature process which reduces germanium outgassing. The low temperature process can be an LPCVD. An annealing step can be utilized to form the liner.

Abstract: A method and apparatus to enhance magnetoimpedance effect using magnetomechanical resonance are described.

Abstract: A dual-metal CMOS arrangement and method of making the same provides a substrate and a plurality of NMOS devices and PMOS devices formed on the substrate. Each of the plurality of NMOS devices and PMOS devices have gate electrodes. Each NMOS gate electrode includes a first silicide region on the substrate and a first metal region on the first silicide region. The first silicide region of the NMOS gate electrode consists of a first silicide having a work function that is close to the conduction band of silicon. Each of the PMOS gate electrodes includes a second silicide region on the substrate and a second metal region on the second silicide region. The second silicide region of the PMOS gate electrode consists of a second silicide having a work function that is close to the valence band of silicon.

Abstract: A method of manufacturing a semiconductor device on a silicon-on-insulator wafer including a silicon active layer having at least two die pads formed thereon, the at least two die pads separated by at least one scribe lane, including the steps of forming at least one cavity through the silicon active layer in the at least one scribe lane; forming at least one gettering plug in each said cavity, each said gettering plug comprising doped fill material containing a plurality of gettering sites; and subjecting the wafer to conditions to getter at least one impurity into the plurality of gettering sites.

Abstract: Strained silicon is grown on a dielectric material in a trench in a silicon germanium layer at a channel region of a MOSFET after fabrication of other MOSFET elements using a removable dummy gate process to form an SOI MOSFET. The MOSFET is fabricated with the dummy gate in place, the dummy gate is removed, and a trench is formed in the channel region. Dielectric material is grown in the trench, and strained silicon is then grown from the silicon germanium trench sidewalls to form a strained silicon layer that extends across the dielectric material. The silicon germanium sidewalls impart strain to the strained silicon, and the presence of the dielectric material allows the strained silicon to be grown as a thin fully depleted layer. A replacement gate is then formed by damascene processing.

Abstract: Method and apparatus for a frequency divider using variable capacitance are described.

Abstract: A method and apparatus for a frequency-division marker are described.

Abstract: A method and apparatus to detect an external source are described.

Abstract: The formation of shallow trench isolations in a strained silicon MOSFET includes performing ion implantation in the strained silicon layer in the regions to be etched to form the trenches of the shallow trench isolations. The dosage of the implanted ions and the energy of implantation are chosen so as to damage the crystal lattice of the strained silicon throughout the thickness of the strained silicon layer in the shallow trench isolation regions to such a degree that the etch rate of the strained silicon in those regions is increased to approximately the same as or greater than the etch rate of the underlying undamaged silicon germanium. Subsequent etching yields trenches with significantly reduced or eliminated undercutting of the silicon germanium relative to the strained silicon. This in turn substantially prevents the formation of fully depleted silicon on insulator regions under the ends of the gate, thus improving the MOSFET leakage current.

Abstract: A circuit carrier is provided. The circuit carrier comprises a substrate, a patterned circuit layer, and a solder mask layer. The patterned circuit layer is deposed on a surface of the substrate and has two passive component electrode pads. The solder mask layer covers the surface of the substrate, and includes a first solder mask opening, a second solder mask opening, and a third solder mask opening. The first solder mask opening and the second solder mask opening expose the passive component electrode pads respectively. The third solder mask opening along its length direction is divided into a central area and two extension areas. The central area is between the first and the second solder mask openings. The extension areas are extending from the central area along the length direction to two sides, respectively. The width of the central area is smaller than the width of one the extension areas.

Abstract: An automatic integrated circuit testing system, device and method using an integrative computer. The system includes a machine frame having at least one testing computer for holding and testing the integrated circuit. The machine frame also has at least one automatic plugging/unplugging machine for engaging the integrated circuits with the computer system and removing the integrated circuits after testing has been completed. The machine frame further includes at least one controller device electrically connected to the testing computer and the automatic plugging/unplugging machine for controlling the movements of the automatic plugging/unplugging machine and the testing computer. The testing computer and the integrated circuit together form an integrative computer system capable of executing various general application programs and special testing programs for integrative testing and analysis.

Abstract: In one embodiment, the present invention relates to a method for pre-treating and etching a dielectric layer in a semiconductor device comprising the steps of: (A) pre-treating one or more exposed portions of a dielectric layer with a plasma in a plasma etching tool to increase removal rate of the one or more exposed portions upon etching; and (B) removing the one or more exposed portions of the dielectric layer in the same plasma etching tool of step (A) via plasma etching.

Abstract: The formation of shallow trench isolations in a strained silicon MOSFET includes implantation of a dopant into overhang portions of the strained silicon layer and silicon germanium layer at the edges of trenches in which shallow trench isolations are to be formed. The conductivity type of the dopant is chosen to be opposite the conductivity type of the source and drain dopants. The implanted dopant increases the threshold voltage Vt beneath the ends of the gate in overhang portions of the strained silicon layer so that it is approximately equal to or greater than that of the remainder of the MOSFET. The resulting strained silicon MOSFET exhibits reduced leakage current beneath the ends of the gate.