Abstract: A double gate metal-oxide semiconductor field-effect transistor (MOSFET) includes a fin, a first gate and a second gate. The first gate is formed on top of the fin. The second gate surrounds the fin and the first gate. In another implementation, a triple gate MOSFET includes a fin, a first gate, a second gate, and a third gate. The first gate is formed on top of the fin. The second gate is formed adjacent the fin. The third gate is formed adjacent the fin and opposite the second gate.

Abstract: A combination Electronic Article Surveillance/Radio Frequency Identification (“EAS/RFID”) tag and method and system for deactivating said combination EAS/RFID tags without the need to physically contact the tag with a deactivation device. The EAS/RFID tag replaces the conventional diode with a non-linear device such as a capacitor with a given breakdown voltage threshold. Inducing a predetermined voltage across the capacitor results in destruction of the capacitor rendering the EAS/RFID tag undetectable in the interrogation systems.

Abstract: An improved pigment spacing composition and method of manufacture. A coating composition wherein the pigment particles are spaced more uniformly resulting in improved coating properties. In another embodiment, the present invention relates to a composition having nanoparticles interacting with pigmentary titanium dioxide to provide for more uniform spacing of the titanium dioxide.

Abstract: An acidic etcher solution for etching a substrate's surface. The acidic etcher solution includes an acid and a pH indicator, the pH indicator having at least one color transition at a pH below 7. The acidic etcher solution having an initial color at an initial pH when applied to the surface to allow determination of the evenness of the coating and the etcher having a second color at a second pH higher than the first pH wherein visual inspection allows for a determination that the etcher is substantially finished reacting.

Abstract: A magnetic detacher has a core magnet and a ring magnet. The core magnet has a body with a top and bottom surface, and produces a first magnetic field. The ring magnet defines a cavity. The ring magnet has a body with a top and bottom and produces a second magnetic field. The ring magnet is axially aligned with the core magnet such that the first magnetic field opposes the second magnetic field along the bodies and enhances it within the cavity. The top surface of the core magnet is separated from the bottom surface of the ring magnet by a predetermined distance thereby producing a resultant magnetic field having a first resultant field strength at a specific position greater than a second resultant field strength produced at the same position when the top surface of the core magnet abuts the bottom surface of the ring magnet.

Abstract: A method of manufacturing a semiconductor device structure, such as a FinFET device structure, is provided. The method begins by providing a substrate comprising a bulk semiconductor material, a first conductive fin structure formed from the bulk semiconductor material, and a second conductive fin structure formed from the bulk semiconductor material. The first conductive fin structure and the second conductive fin structure are separated by a gap. Next, spacers are formed in the gap and adjacent to the first conductive fin structure and the second conductive fin structure. Thereafter, an etching step etches the bulk semiconductor material, using the spacers as an etch mask, to form an isolation trench in the bulk semiconductor material. A dielectric material is formed in the isolation trench, over the spacers, over the first conductive fin structure, and over the second conductive fin structure.

Abstract: The present invention provides increased stain resistance, tannin blocking, adhesion, and various other properties. A composition in accordance with the principles of the present invention comprises at least three binders, nanoparticle pigment, and pigmentary titanium dioxide. In one embodiment, the present invention relates to a coating on a substrate wherein the coating has three binders, nanoparticle metal oxide pigment, and pigmentary titanium dioxide. Various additives may be included to formulate paint as known in the art.

Abstract: An Electronic Article Surveillance (“EAS”) tag and method and system for deactivating EAS tags without the need to physically contact the tag with a deactivation device. The EAS tag replaces the conventional diode with a non-linear device such as a metal-oxide-semiconductor (“MOS”) capacitor with a given breakdown voltage threshold. Inducing a predetermined voltage across the MOS capacitor results in destruction of the MOS capacitor rendering the EAS tag undetectable in the EAS interrogation system.

Abstract: A method may include forming a gate electrode over a fin structure, depositing a first metal layer on a top surface of the gate electrode, performing a first silicide process to convert a portion of the gate electrode into a metal-silicide compound, depositing a second metal layer on a top surface of the metal-silicide compound, and performing a second silicide process to form a fully-silicided gate electrode.

Abstract: A method of manufacturing a semiconductor device structure, such as a FinFET device structure, is provided. The method begins by providing a substrate comprising a bulk semiconductor material, a first conductive fin structure formed from the bulk semiconductor material, and a second conductive fin structure formed from the bulk semiconductor material. The first conductive fin structure and the second conductive fin structure are separated by a gap. Next, spacers are formed in the gap and adjacent to the first conductive fin structure and the second conductive fin structure. Thereafter, an etching step etches the bulk semiconductor material, using the spacers as an etch mask, to form an isolation trench in the bulk semiconductor material. A dielectric material is formed in the isolation trench, over the spacers, over the first conductive fin structure, and over the second conductive fin structure.

Abstract: The present invention provides increased stain resistance, tannin blocking, adhesion, and various other properties. A composition in accordance with the principles of the present invention comprises at least three binders, nanoparticle pigment, and pigmentary titanium dioxide. In one embodiment, the present invention relates to a coating on a substrate wherein the coating has three binders, nanoparticle metal oxide pigment, and pigmentary titanium dioxide. Various additives may be included to formulate paint as known in the art.

Abstract: A food container comprises a first container and a second container which has opposite shapes and can be stacked together. Two snap-fit portions are provided on the top edge of the second food container and a plurality of spoons are stacked over the second food container. Third containers with corresponding sizes are further stacked between the first container and the second container. In this manner, the containers and the spoons are stacked together to form minimal volume. Not only the storage space can be saved but also it is handy for carry-out use.

Abstract: A transistor suitable for high-voltage applications and a method of manufacture is provided. A first device is formed by depositing a dielectric layer and a conductive layer over a substrate. A hard mask is deposited over the conductive layer and patterned using photolithography techniques. The photoresist material is removed prior to etching the underlying conductive layer and dielectric layer. The hard mask is also used as an implant mask. Another mask may be deposited and formed over the conductive layer to form other devices in other regions of the substrate. The other mask is preferably removed from over the hard mask prior to etching the conductive layer and the dielectric layer.

Abstract: An integrated circuit package may include a substrate and an integrated circuit. The substrate may include at least one region, and a first magnetic material associated with the at least one region. The integrated circuit may have a second magnetic material associated therewith. The second magnetic material may be attracted to the first magnetic material to coupled the integrated circuit to the at least one region of the substrate. The IC package may be utilized in an RFID tag of an RFID system. An associated method for assembling an integrated circuit to a substrate is also provided.

Abstract: A method of manufacturing semiconductor fins for a semiconductor device may begin by providing a bulk semiconductor substrate. The method continues by growing a layer of first epitaxial semiconductor material on the bulk semiconductor substrate, and by growing a layer of second epitaxial semiconductor material on the layer of first epitaxial semiconductor material. The method then creates a fin pattern mask on the layer of second epitaxial semiconductor material. The fin pattern mask has features corresponding to a plurality of fins. Next, the method anisotropically etches the layer of second epitaxial semiconductor material, using the fin pattern mask as an etch mask, and using the layer of first epitaxial semiconductor material as an etch stop layer. This etching step results in a plurality of fins formed from the layer of second epitaxial semiconductor material.

Abstract: The invention may include a novel composition for and/or processing of an active element for an EAS marker that achieves the same or better performance of existing materials while solving the problem of higher cost. It may include a magnetomechanical active element formed by planar strip of amorphous magnetostrictive alloy having a composition FeaNibMc wherein a+b+c=100, wherein a is in a range of 40-70 weight percent, b is in a range of 10-50 weight percent, and c is in a range of 10-50 weight percent, and where M is the balance of remaining elements; wherein the magnetomechanical active element is subject to batch annealing in the presence of a magnetic field that is substantially transverse to the ribbon length of the element and at a temperature of less than about 300° C. and for a time greater than at least about one hour.

Abstract: A method of manufacturing semiconductor fins for a semiconductor device may begin by providing a bulk semiconductor substrate. The method continues by growing a layer of first epitaxial semiconductor material on the bulk semiconductor substrate, and by growing a layer of second epitaxial semiconductor material on the layer of first epitaxial semiconductor material. The method then creates a fin pattern mask on the layer of second epitaxial semiconductor material. The fin pattern mask has features corresponding to a plurality of fins. Next, the method anisotropically etches the layer of second epitaxial semiconductor material, using the fin pattern mask as an etch mask, and using the layer of first epitaxial semiconductor material as an etch stop layer. This etching step results in a plurality of fins formed from the layer of second epitaxial semiconductor material.

Abstract: A near field antenna is disclosed which is configured to read an RFID label such that a localized electric E field emitted by the antenna at an operating wavelength resides substantially within a zone defined by the near field. The localized E field directs a current distribution along an effective length of the antenna corresponding to a half-wave to a full-wave structure.

Abstract: An improved pigment spacing composition and method of manufacture. A coating composition wherein the pigment particles are spaced more uniformly resulting in improved coating properties. In another embodiment, the present invention relates to a composition having nanoparticles interacting with pigmentary titanium dioxide to provide for more uniform spacing of the titanium dioxide.

Abstract: A method and system for increasing the read range of a security tag by supplying an additional antenna system to the tag in order to provide power to a radio frequency identification (“RFID”) chip without the need to rely solely on power from the RFID reader. The security tag includes an RFID chip and a first antenna circuit coupled to the RFID chip where the first antenna circuit is adapted to decode interrogation signals from an RFID reader. The security tag also includes a second antenna circuit coupled to the RFID chip. The second antenna circuit is adapted to induce power from signals received from at least an alternate power source, such as an EAS transmitter, so that the RFID chip can be powered up and activated during an RFID interrogation round.