Abstract: The present invention provides a chip including an I/O pin and an ESD protection circuit. The ESD protection circuit includes a P-type device and a first diode, wherein the P-type device is coupled between the I/O pin and a ground voltage, and an anode of the first diode is directly connected to the I/O pin. In addition, the ESD protection circuit does not comprise any device whose N-type doping/diffusion is directly connected to the I/O pin.

Abstract: A method for monitoring paging is provided. The method is performed by a user equipment (UE) and includes actions of receiving a first Physical Downlink Control Channel (PDCCH) addressed to a first Radio Network Temporary Identifier (RNTI), and stopping monitoring a second PDCCH addressed to a second RNTI if the first PDCCH includes a paging stop indicator, where the second RNTI is the same as the first RNTI.

Abstract: A propagating signal is propagated through a propagating medium to a plurality of receivers coupled to the propagating medium. A signal affected by a disturbance of the propagating medium is received. The received signal includes a signal portion that corresponds to the propagating signal that has been disturbed by the disturbance. At least a portion of a version of the signal portion of the received signal that corresponds to the propagating signal that has been disturbed by the disturbance is compared with one or more reference signal signatures of one or more disturbance types. Based at least in part on the comparison, it is determined that one of the one or more disturbance types corresponds to the disturbance of propagating medium.

Abstract: A photo resist layer is used to protect a dielectric layer and conductive elements embedded in the dielectric layer when patterning an etch stop layer underlying the dielectric layer. The photo resist layer may further be used to etch another dielectric layer underlying the etch stop layer, where etching the next dielectric layer exposes a contact, such as a gate contact. The bottom layer can be used to protect the conductive elements embedded in the dielectric layer from a wet etchant used to etch the etch stop layer.

Abstract: A semiconductor package includes a first semiconductor substrate, an array of conductive bumps, a second semiconductor substrate, and a spacing pattern. The first semiconductor substrate includes a pad region and an array of first pads disposed within the pad region. The array of conductive bumps is disposed on the array of first pads respectively. The second semiconductor substrate is disposed over the first semiconductor substrate and includes an array of second pads bonded to the array of conductive bumps respectively. The spacing pattern is disposed between the first semiconductor substrate and the second semiconductor substrate, wherein the spacing pattern is located at a periphery of the pad region.

Abstract: A package comprises at least one first device die, and a redistribution line (RDL) structure having the at least one first device die bonded thereto. The RDL structure comprises a plurality of dielectric layers, and a plurality of RDLs formed through the plurality of dielectric layers. A trench is defined proximate to axial edges of the RDL structure through each of the plurality of dielectric layers. The trench prevents damage to portions of the RDL structure located axially inwards of the trench.

Abstract: A method for forming a via in a semiconductor device and a semiconductor device including the via are disclosed. In an embodiment, the method may include bonding a first terminal and a second terminal of a first substrate to a third terminal and a fourth terminal of a second substrate; separating the first substrate to form a first component device and a second component device; forming a gap fill material over the first component device, the second component device, and the second substrate; forming a conductive via extending from a top surface of the gap fill material to a fifth terminal of the second substrate; and forming a top terminal over a top surface of the first component device, the top terminal connecting the first component device to the fifth terminal of the second substrate through the conductive via.

Abstract: A manufacturing method of a flip chip package structure is provided and has following steps: providing at least one silicon substrate having a connecting surface and at least one conductive base attached to the connecting surface; arranging a graphene copper layer covering the conductive base; laminating a photoresist layer on the connecting surface, etching the photoresist layer to form a cavity corresponding to the conductive base, and a portion of the graphene copper layer corresponding to the conductive base being exposed on a bottom of the cavity; electroplating a copper material on the graphene copper layer, and the copper material being accumulated in the cavity to form a copper pillar; removing the photoresist layer and the graphene copper layer covered by the photoresist layer.

Abstract: A device is provided to generate a three-dimensional (3D) real image. A display panel is divided into several sub-areas for emitting scenes. Through a projecting lens-array unit, the scenes enter a fusion lens unit to form a real image of light field at a position beyond common barrier. Through an eyepiece unit, the image is emitted to human eye. Thus, the present invention provides a device for near-eye viewing, which reduces existing human-eye vergence accommodation conflict (VAC) in most augmented reality and mixed reality devices. Therein, the display of near-eye light field is a process of light-field reproduction, which merges the scenes and reduces aberration.

Abstract: An indicator identifying a force intensity of a touch input provided on a touch input surface is received. It is determined that the touch input is associated with an audio volume control. An audio volume is controlled based at least in part on the indicator identifying the force intensity of the touch input.

Abstract: An antiferroelectric field effect transistor (Anti-FeFET) of a memory cell includes an antiferroelectric layer instead of a ferroelectric layer. The antiferroelectric layer may operate based on a programmed state and an erased state in which the antiferroelectric layer is in a fully polarized alignment and a non-polarized alignment (or a random state of polarization), respectively. This enables the antiferroelectric layer in the FeFET to provide a sharper/larger voltage drop for an erase operation of the FeFET (e.g., in which the FeFET switches or transitions from the programmed state to the erased state) relative to a ferroelectric material layer that operates based on switching between two opposing fully polarized states.

Abstract: A composition for preparing a foam, a foam, and a shoe employing the foam are provided. The composition for preparing a foam includes 3-30 parts by weight of a first polymer and at least one of a second polymer and a third polymer. The first polymer is cyclic olefin polymer (COP), cyclic olefin copolymer (COC), metallocene based cyclic olefin copolymer (mCOC), fully hydrogenated conjugated diene-vinyl aromatic copolymer, or a combination thereof. The total weight of the second polymer and the third polymer is 70-97 parts by weight. The second polymer is polyolefin, olefin copolymer, or a combination thereof. The third polymer is conjugated diene-vinyl aromatic copolymer, partially hydrogenated conjugated diene-vinyl aromatic copolymer, or a combination thereof. The total weight of the first polymer and at least one of the second polymer and the third polymer is 100 parts by weight.

Abstract: A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become energized and emit extreme ultraviolet radiation. A collector reflects the extreme ultraviolet radiation toward a photolithography target. The photolithography system reduces splashback of the tin droplets onto the receiver by generating a net electric charge within the droplets using a charge electrode and decelerating the droplets by applying an electric field with a counter electrode.

Abstract: The present disclosure provides a package structure and a method of manufacturing a package. The package structure includes a semiconductor die laterally encapsulated by an encapsulant, a redistribution structure and bumps. The redistribution structure is disposed on the semiconductor die and the encapsulant, and is electrically connected with the at least one semiconductor die. The bumps are disposed on the redistribution structure. The redistribution structure includes dielectric layers and metallic pattern layers sandwiched between the dielectric layers. The redistribution structure includes metallic pads on an outermost dielectric layer of the dielectric layers, and the outmost dielectric layer has undercut cavities beside the metallic pads.

Abstract: A user equipment (UE) and a method performed by the UE are provided. The method includes transitioning from a radio resource control (RRC) inactive (RRC_INACTIVE) state to an RRC idle (RRC_IDLE) state upon determining that the UE has failed to find a suitable cell and camped on an acceptable cell; and discarding a radio access network (RAN) notification area (RNA) configuration that comprises at least one of a list of tracking area identities (IDs) or a list of RAN area IDs in response to the transitioning from the RRC_INACTIVE state to the RRC_IDLE state. The acceptable cell fulfills a minimum set of requirements to initiate an emergency call and to receive one or more Earthquake & Tsunami Warning System (ETWS) and Commercial Mobile Alert System (CMAS) notifications. The suitable cell provides normal services. The acceptable cell provides limited services.

Abstract: A method for LBT failure detection performed by a UE is provided. The method includes: receiving, by a MAC entity of the UE, an LBT failure indication from a lower layer for all UL transmissions; increasing an LBT failure counter when the MAC entity receives the LBT failure indication; determining an LBT failure event occurs when the LBT failure counter is greater than or equal to a threshold; and resetting the LBT failure counter after the MAC entity has not received the LBT failure indication for a time period.

Abstract: Some implementations described herein include systems and techniques for fabricating a wafer-on-wafer product using a filled lateral gap between beveled regions of wafers included in a stacked-wafer assembly and along a perimeter region of the stacked-wafer assembly. The systems and techniques include a deposition tool having an electrode with a protrusion that enhances an electromagnetic field along the perimeter region of the stacked-wafer assembly during a deposition operation performed by the deposition tool. Relative to an electromagnetic field generated by a deposition tool not including the electrode with the protrusion, the enhanced electromagnetic field improves the deposition operation so that a supporting fill material may be sufficiently deposited.

Abstract: The application relates to a method for developing the agitation system of a scale-up polymerization vessel. A simulated prediction model is obtained by use of a small polymerization vessel and by integrating Taguchi experimental design method with artificial intelligence (AI) neural network. Accordingly, vessel parameters for the agitation system of a scale-up polymerization vessel can be rapidly and accurately predicted based on simulation qualities thereof, further facilitating a construction of the agitation system of a scale-up polymerization vessel.

Abstract: A display device includes a display panel. The display panel has a functional display area. The functional display area includes a plurality of display pixels and a plurality of light transmitting regions. The plurality of display pixels are around by the plurality of the light transmitting regions. A boundary between one of the plurality of display pixels and one of the plurality of light transmitting regions comprises an arc segment.

Abstract: A package structure and the manufacturing method thereof are provided. The package structure includes a first package including at least one first semiconductor die encapsulated in an insulating encapsulation and through insulator vias electrically connected to the at least one first semiconductor die, a second package including at least one second semiconductor die and conductive pads electrically connected to the at least one second semiconductor die, and solder joints located between the first package and the second package. The through insulator vias are encapsulated in the insulating encapsulation. The first package and the second package are electrically connected through the solder joints. A maximum size of the solder joints is greater than a maximum size of the through insulator vias measuring along a horizontal direction, and is greater than or substantially equal to a maximum size of the conductive pads measuring along the horizontal direction.