Abstract: A package structure and the manufacturing method thereof are provided. The package structure includes a first package including at least one first semiconductor die encapsulated in an insulating encapsulation and through insulator vias electrically connected to the at least one first semiconductor die, a second package including at least one second semiconductor die and conductive pads electrically connected to the at least one second semiconductor die, and solder joints located between the first package and the second package. The through insulator vias are encapsulated in the insulating encapsulation. The first package and the second package are electrically connected through the solder joints. A maximum size of the solder joints is greater than a maximum size of the through insulator vias measuring along a horizontal direction, and is greater than or substantially equal to a maximum size of the conductive pads measuring along the horizontal direction.

Abstract: A gas supply connector of the present invention includes a gas supply member and two fasteners, wherein the gas supply member has a main body and multiple tubes; the fastener includes a buckling portion, a pressing portion and a neck portion. The pressing portion has an inner layer body and an outer layer body. The neck portion contracts from two lateral ends toward the center to form a tapered section, and the outer surface of the neck portion is arranged with multiple reinforcing ribs. The present invention through the neck portion reduces the force required for pressing the fastener to deform by the user, and through the reinforcing ribs increases the structural strength of the neck portion to prevent the fastener from breaking; in addition, the inner layer is made of plastic, and outer layer body is made of soft material, so as to improve the comfort of pressing fastener.

Abstract: A gas supply connector of the present invention includes a gas supply member and two fasteners, wherein the gas supply member has a main body and multiple tubes; the fastener includes a buckling portion, a pressing portion and a neck portion. The pressing portion has an inner layer body and an outer layer body. The neck portion contracts from two lateral ends toward the center to form a tapered section, and the outer surface of the neck portion is arranged with multiple reinforcing ribs. The present invention through the neck portion reduces the force required for pressing the fastener to deform by the user, and through the reinforcing ribs increases the structural strength of the neck portion to prevent the fastener from breaking; in addition, the inner layer is made of plastic, and outer layer body is made of soft material, so as to improve the comfort of pressing fastener.

Abstract: A system is for detecting a location of a touch input on a surface of a propagating medium. The system includes a transmitter coupled to the propagating medium and configured to emit a signal. The signal has been allowed to propagate through the propagating medium and the location of the touch input on the surface of the propagating medium is detected at least in part by detecting an effect of the touch input on the signal that has been allowed to propagate through the propagating medium. The system includes a piezoresistive sensor coupled to the propagating medium. The piezoresistive sensor is configured to at least detect a force, pressure, or applied strain of the touch input on the propagating medium.

Abstract: A method includes forming a metal layer extending into openings of a dielectric layer to contact a first metal pad and a second metal pad, and bonding a bottom terminal of a component device to the metal layer. The metal layer has a first portion directly underlying and bonded to the component device. A raised via is formed on the metal layer, and the metal layer has a second portion directly underlying the raised via. The metal layer is etched to separate the first portion and the second portion of the metal layer from each other. The method further includes coating the raised via and the component device in a dielectric layer, revealing the raised via and a top terminal of the component device, and forming a redistribution line connecting the raised via to the top terminal.

Abstract: A sensor includes a plurality of piezoresistive elements and a plurality of electrical connection terminals. The plurality of piezoresistive elements are fabricated on a first side of a substrate. A second side of the substrate is configured to be coupled to an object where a physical disturbance is to be detected. A plurality of electrical connection terminals are coupled to the first side of the substrate.

Abstract: A method of operating a semiconductor apparatus includes generating, by a droplet generator, a target material droplet; receiving, by a catcher, the target material droplet, wherein the catcher has a first section and a second section, wherein the first section of the catcher is closer to the droplet generator than the second section of the catcher; and heating the second section of the catcher, wherein the first section of the catcher is longer than the second section of the catcher and is free of a heater, and heating the second section of the catcher is performed such that a temperature of the second section of the catcher is higher than a temperature of the first section of the catcher.

Abstract: A semiconductor device includes a bridge and a plurality of dies. The bridge is free of active devices and includes a substrate, an interconnect structure, a redistribution layer structure and a plurality of conductive connectors. The interconnect structure includes at least one dielectric layer and a plurality of first conductive features in the at least one dielectric layer. The redistribution layer structure includes at least one polymer layer and a plurality of second conductive features in the at least one polymer layer, wherein a sidewall of the interconnect structure is substantially flush with a sidewall of the redistribution layer structure. The conductive connectors are electrically connected to one another by the redistribution layer structure and the interconnect structure. The bridge electrically connects the plurality of dies.

Abstract: A package structure and the manufacturing method thereof are provided. The package structure includes a first package including at least one first semiconductor die encapsulated in an insulating encapsulation and through insulator vias electrically connected to the at least one first semiconductor die, a second package including at least one second semiconductor die and conductive pads electrically connected to the at least one second semiconductor die, and solder joints located between the first package and the second package. The through insulator vias are encapsulated in the insulating encapsulation. The first package and the second package are electrically connected through the solder joints. A maximum size of the solder joints is greater than a maximum size of the through insulator vias measuring along a horizontal direction, and is greater than or substantially equal to a maximum size of the conductive pads measuring along the horizontal direction.

Abstract: A haptic feedback system is disclosed. The system includes a plurality of remote transmitters that are remote from a location of interest on a surface of the system. The system includes a signal generator that generates a signal for each of the remote transmitters. The remote transmitters propagate the signals through a medium of the surface and the signals interfere at the location of interest such that a localized disturbance is generated at the location of interest.

Abstract: A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become energized and emit extreme ultraviolet radiation. A collector reflects the extreme ultraviolet radiation toward a photolithography target. The photolithography system reduces splashback of the tin droplets onto the receiver by generating a net electric charge within the droplets using a charge electrode and decelerating the droplets by applying an electric field with a counter electrode.

Abstract: A semiconductor package includes a die, an insulation layer, a plurality of first electrical conductive vias, a plurality of second electrical conductive vias, a plurality of thermal conductive vias and a connecting pattern. The die includes a plurality of first pads and a plurality of second pads. The insulation layer is disposed on the die and includes a plurality of openings exposing the first pads and the second pads. The first electrical conductive vias and the second electrical conductive vias are disposed in the openings and contact the first pads and the second pads respectively. The thermal conductive vias are disposed on the insulation layer. The connecting pattern is disposed on the insulation layer and connects the first electrical conductive vias and the thermal conductive vias. The thermal conductive vias are connected to the first pads through the connecting pattern and the first electrical conductive vias.

Abstract: A method for adhering a reticle onto a top surface of a chuck is provided in accordance with some embodiments of the present disclosure. The method includes sliding a reticle relative to a chuck along a first direction, such that a plurality of fibers over a top surface of the chuck are inclined away from an imaginary line normal to the top surface of the chuck by sliding the reticle relative to the chuck along the first direction; performing a photolithography process using the reticle; and after performing the photolithography process, sliding the reticle relative to the chuck along a second direction opposite to the first direction, such that the fibers are moved back toward the imaginary line by sliding the reticle relative to the chuck along the second direction.

Abstract: A redistribution structure for a semiconductor device and a method of forming the same are provided. The semiconductor device includes a die encapsulated by an encapsulant, the die including a pad, and a connector electrically connected to the pad. The semiconductor device further includes a first via in physical contact with the connector. The first via is laterally offset from the connector by a first non-zero distance in a first direction. The first via has a tapered sidewall.

Abstract: A method includes attaching a first die and a second die to a carrier; forming a molding material between the first die and second die; and forming a redistribution structure over the first die, the second die and the molding material, the redistribution structure includes a first redistribution region; a second redistribution region; and a dicing region between the first redistribution region and the second redistribution region. The method further includes forming a first opening and a second opening in the dicing region, the first opening and the second opening extending through the redistribution structure and exposing the molding material; and separating the first die and the second die by cutting through a portion of the molding material aligned with the dicing region from a second side of the molding material toward the first side of the molding material, the second side opposing the first side.

Abstract: A method of manufacturing a semiconductor package includes forming an encapsulated semiconductor device and forming a redistribution structure over the encapsulated semiconductor device, where the encapsulated semiconductor device includes a semiconductor device encapsulated by an encapsulating material. Forming the redistribution structure includes forming a first dielectric layer on the encapsulated semiconductor device, and forming a first redistribution circuit layer on the first dielectric layer by a plating process carried out at a current density of substantially 4˜6 amperes per square decimeter, where the first dielectric layer comprises a first via opening. An upper surface of the first redistribution circuit layer filling the first via opening is substantially coplanar with an upper surface of the rest of the first redistribution circuit layer.

Abstract: A method of manufacturing graphene polyester chips including steps of: melt-mixing a polymer material and graphene powder having a mass fraction ?2 wt %, and melt-mixing a tackifier with a mass fraction between 1 wt % and 3 wt %, a toughener with a mass fraction between 1 wt % and 3 wt %, and a dispersant with a mass fraction between 1 wt % and 4 wt % sequentially. Finally, a molten raw material is made into a plurality of graphene polyester chips each in form of short cylindrical particle. The present disclosure further includes a method of manufacturing graphene diaphragm.

Abstract: In an embodiment, a device includes: an integrated circuit die; a first dielectric layer over the integrated circuit die; a first metallization pattern extending through the first dielectric layer to electrically connect to the integrated circuit die; a second dielectric layer over the first metallization pattern; an under bump metallurgy extending through the second dielectric layer; a third dielectric layer over the second dielectric layer and portions of the under bump metallurgy; a conductive ring sealing an interface of the third dielectric layer and the under bump metallurgy; and a conductive connector extending through the center of the conductive ring, the conductive connector electrically connected to the under bump metallurgy.

Abstract: A method of fabricating a semiconductor device includes providing a first substrate and forming a resist layer over the first substrate. In some embodiments, the method further includes performing an exposure process to the resist layer. The exposure process includes exposing the resist layer to a radiation source through an intervening mask. In some examples, the intervening mask includes a second substrate, a multi-layer structure formed over the second substrate, a capping layer formed over the multi-layer structure, and an absorber layer disposed over the capping layer. In some embodiments, the absorber layer includes a first main pattern area and an opening area spaced a distance from the first main pattern area. In various examples, the method further includes, after performing the exposure process, developing the exposed resist layer to form a patterned resist layer.

Abstract: A method for manufacturing a graphene plastic film includes the steps of providing plastic particles and graphene powder, mixing the plastic particles with the graphene powder in a weight ratio not greater than 2% to form a mixed material, heating the mixed material to form a melted material (100), pressing the melted material (100) to form a graphene plastic sheet (210), and radially stretching a periphery of the graphene plastic sheet (210) to expand and thin the graphene plastic sheet (210) to form a graphene plastic film (220). By adding graphene to the mixed material, physical properties of the graphene plastic film (220) can be enhanced. In comparison with the current technology, it is easier to be manufactured and wider to be applied.