Patents by Inventor Ming Shing

Ming Shing has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20030211712
    Abstract: Within a plasma enhanced chemical vapor deposition (PECVD) method for forming within a microelectronic fabrication an epitaxial semiconductor layer comprising at least one of silicon and germanium, there is employed a reactant gas composition comprising: (1) at least one of a silicon source material and a germanium source material; and (2) an inert carrier gas. The inert carrier gas provides the epitaxial semiconductor layer with attenuated defects.
    Type: Application
    Filed: May 9, 2002
    Publication date: November 13, 2003
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Sheng-Hsiung Chen, Shun Long Chen, Hungtse Lin, Ming Shing Tsai, Lan-Chieh Shih
  • Publication number: 20020188632
    Abstract: A method and apparatus for allowing a user to edit a table in a Web page is provided. The method comprises displaying the table and several display elements on a display device. An indication is received, which user wants to add one of the display elements or modify a layout of the table to the table. A cell structure is added or changed for the display element to several table structures corresponded to the table on the display device. In response to the indication is generated to change a display of the table and several HTML (HyperText Markup Language) or XML codes that substantially reflect the table in accordance with the table structures on the display device.
    Type: Application
    Filed: June 6, 2001
    Publication date: December 12, 2002
    Inventor: Ming-Shing Su
  • Patent number: 6462390
    Abstract: A multi-film capping layer having a cobalt layer, a barrier layer, and a stuffing layer is disclosed, wherein the barrier layer isolates the cobalt layer from the stuffing layer. The multi-film capping layer is formed on a gate transistor and applicable to a self-aligned silicide (salicide) process, so that a sheet resistance of the salicide layer on conductive regions of the gate transistor is significantly reduced. The stuffing layer further prevents entry of oxygen or moisture to the salicide layer, thus no cobalt oxide is formed when RTP is performed. Without formation of the cobalt oxide, the salicide process is free from the bridging issue and the filament issue.
    Type: Grant
    Filed: September 27, 2000
    Date of Patent: October 8, 2002
    Assignee: United Microelectronics Corp.
    Inventors: Ming-Shing Chen, Shu-Jen Chen, Jy-Hwang Lin, Kuen-Syh Tseng
  • Publication number: 20020016063
    Abstract: A method of fabricating a metal plug comprises steps of providing a substrate and forming a dielectric layer on the substrate with an opening to expose part of the substrate. The method further comprises steps of forming a metal layer on the dielectric layer, forming a first barrier layer by chemical vapor deposition (CVD) to provide a better step coverage, and forming a second barrier layer by physical vapor deposition (PVD) to make the barrier layer harder and less water absorptive. A metal layer is then formed on the second barrier layer and is removed by etching back to form the metal plug.
    Type: Application
    Filed: May 27, 1999
    Publication date: February 7, 2002
    Inventors: MING-SHING CHEN, BILL HSU
  • Patent number: 6319826
    Abstract: A method of forming a barrier layer is described. A dielectric layer is formed on a substrate. The dielectric layer comprises an opening exposing a portion of the substrate. A metallic layer, which is conformal to the opening, is formed on the dielectric layer. A first metallic nitride layer, which is conformal to the opening, is formed on the first metallic layer by chemical vapor deposition. The second metallic nitride layer, which is conformal to the opening, is formed on the first metallic nitride layer.
    Type: Grant
    Filed: March 11, 1999
    Date of Patent: November 20, 2001
    Assignee: United Microelectronics Corp.
    Inventors: Ming-Shing Chen, Yung-Chieh Kuo
  • Patent number: 6291301
    Abstract: A method of fabricating a gate junction conductive structure is described in which a selective silicon deposition method is used to form a silicon layer of a greater area on the polysilicon gate. A metal silicide process is further conducted on the silicon layer to convert the silicon layer to a metal silicide layer. Since the gate junction surface in forming the metal silicide layer is increased, not only the narrow line effect is prevented, the temperature for the thermal treatment process in forming the metal silicide layer is also lower. As a result, the sheet resistance of the metal silicide layer is lower and the device is more stable.
    Type: Grant
    Filed: July 19, 1999
    Date of Patent: September 18, 2001
    Assignee: United Microelectronics Corp.
    Inventor: Ming-Shing Chen
  • Patent number: 6211868
    Abstract: A method for performing editing in a multimedia training and presentation system that substantially providing user autonomy and transparency is disclosed. The method includes inputting a basic setting used in the multimedia synchronous training system. Next, a curriculum used in the multimedia synchronous training system is input, and multimedia teaching information is then input. After inputting points of emphasis, the teaching information and the points of emphasis are synchronized. Finally, miscellaneous settings are performed in the multimedia synchronous training system.
    Type: Grant
    Filed: May 14, 1998
    Date of Patent: April 3, 2001
    Assignee: Infopower Taiwan Corp.
    Inventors: Benjamin Lin, Ming-Shing Su, Chung-Chih Lin, Chien-Hung Yang
  • Patent number: 6211875
    Abstract: A display template setting method in a multimedia synchronous system is disclosed. The method includes, first, displaying predetermined display template models, each including various areas; and selecting one of the predetermined display template models. Next, at least one projecting area having three-dimensional characteristics is set in the predetermined display template model. The positions and scales of the various areas corresponding to the selected display template model are calculated; and the various areas are displayed according to the calculated positions and scales and the setting of the projecting area.
    Type: Grant
    Filed: July 15, 1998
    Date of Patent: April 3, 2001
    Assignee: Infopower Taiwan Corporation
    Inventors: Benjamin Lin, Ming-Shing Su, Chung-Chih Lin, Chien-Hung Yang
  • Patent number: 6194298
    Abstract: A method of fabricating a semiconductor device is described. A conductive layer is formed on a substrate. A spacer is formed on a sidewall of the conductive layer. A thin metallic layer is formed over the substrate. An ion implantation step is performed. A first seeding layer is formed between the first metallic layer and the conductive layer. A second seeding layer is formed between the first metallic layer and the substrate. A second metallic layer is formed over the substrate. An annealing step is performed to form a self-aligned silicide layer on the conductive layer. The first metallic layer and the second metallic layer that do not react are removed.
    Type: Grant
    Filed: May 21, 1999
    Date of Patent: February 27, 2001
    Assignee: United Semiconductor Corp.
    Inventors: Ming-Shing Chen, Akira Mao
  • Patent number: 6073355
    Abstract: A method using piezoelectric effect is provided for measuring an angle between a reference plane and a plane to be measured. The method can be used to measure the inclination of a plane or for leveling purpose. The method employs an apparatus wherein the main characteristics of the apparatus are simple in structure with no limitation in the measurement range and fewer limitations to the environment. The method may also have the following advantages compact, quick and accurate measurement, easy for multiaxial measurement.
    Type: Grant
    Filed: April 14, 1999
    Date of Patent: June 13, 2000
    Assignee: Chung-Shan Institute of Science & Technology
    Inventors: Chung-I Chiang, Chih-Wen Hsieh, Long-Jang Hu, Ming-Shing Jou, Shun-Lih Tu, Horng Chang
  • Patent number: 5992032
    Abstract: An apparatus using piezoelectric effect is provided for measuring an angle between a reference plane and a plane to be measured. Such an apparatus can be used to measure the inclination of a plane or for leveling purpose. The main characteristics of the apparatus are simple in structure, no limitation in the measurement range, and less limitation to the environment. The apparatus also has the following advantages: compact, quick and accurate measurement, easy for multiaxial measurement.
    Type: Grant
    Filed: February 24, 1997
    Date of Patent: November 30, 1999
    Assignee: Chung-Shan Institute of Science & Technology
    Inventors: Chung-I Chiang, Chih-Wen Hsieh, Long-Jang Hu, Ming-Shing Jou, Shun-Lih Tu, Horng Chang
  • Patent number: 5915332
    Abstract: There is provided a system for automatically sensing the activities of an animal within a confined space. The system generally includes a containment assembly having top and side portions within which an animal may be confined. The system also includes an infrared light matrix subsystem for sensing the animal's position within the containment assembly relative to a first plane; an ultrasonic phase shift subsystem for sensing animal's position change within the containment assembly relative to a second plane; as well a decoding and interface circuit subsystems coupled to both the infrared light matrix and ultrasonic phase shift subsystems to perform the necessary decoding and input/output interface functions. The infrared light matrix subsystem is formed by a plurality of infrared transmitter and receiver pairs preferably attached to the side portions of the containment assembly and controlled by a single-chip microcomputer.
    Type: Grant
    Filed: September 9, 1996
    Date of Patent: June 29, 1999
    Inventors: Ming-Shing Young, Yan-Chay Li
  • Patent number: 5746904
    Abstract: A method for continuously treating a water body, comprising a step of using a substantially sealed processing tank, at a top and a bottom portions of which a water outlet and a water inlet are arranged respectively, and in an interior space of which three or more conductive plates substantially in parallel relation with the tank bottom and substantially in parallel relation with one another for upwardly forming a substantially closed S-shaped one-way flow path in said processing tank, wherein said conductive plates are made of a conductive material having a resistivity ranged from 1.59 .mu..OMEGA.to 1300 .mu..OMEGA.
    Type: Grant
    Filed: March 5, 1996
    Date of Patent: May 5, 1998
    Inventor: Ming Shing Lee
  • Patent number: 5170016
    Abstract: A plastic outer shell for a DIN/MINI DIN computer connector has a hollow, elongated rear end extending from the body thereof at one end, the hollow, elongated rear end made from a flexible plastic material and integrally formed of a plurality of spaced, straight ribs in longitudinal direction and a plurality of spaced, curved ribs in transverse direction, the spaced, curved ribs permitting the cross sectional area defined in the hollow, elongated rear end to be expanded for holding cables of different outer diameter.
    Type: Grant
    Filed: July 17, 1991
    Date of Patent: December 8, 1992
    Assignee: Pan-International Industrial Corp.
    Inventors: Yun-Yu Liu, Ming-Shing Laiw
  • Patent number: 5062805
    Abstract: For electrically connecting the bus line from a machine to an IC mounting seat of the electric control circuit of another machine, a cable connector is disclosed comprising a plug seat, an upper cover and a terminal assembly fastened therebetween. The plug seat further comprises an elongated locating seat having a plurality of grooves alternatively vertically disposed at two opposite sides and obliquely aligned with two rows of mounting slots at the two opposite sides thereof for holding the connecting racks of the terminal assembly in place when the contact ends of the terminal assembly are fastened in the mounting slots, as such the bus line at one end of a cable from a machine can be accurately fastened in place and electrically connected to the connecting racks of the terminal assembly, thus, providing for further electric connection to the IC mounting seat of an electric control circuit of another machine through the plug seat.
    Type: Grant
    Filed: November 27, 1990
    Date of Patent: November 5, 1991
    Assignee: Pan-International Industrial Corp.
    Inventors: Yun-Yu Liu, Hsiao-Lei Shih, Yang-Chih Chyou, Ming-Shing Laiw
  • Patent number: 4314980
    Abstract: This invention relates to the preparation of fine particles of reactive beta-dicalcium silicate by means of a solid state process which comprises firing a mixture of calcium sulfate, silica and a reducing additive selected from the group consisting of calcium sulfide, carbon, carbon monoxide, methane and hydrogen, at a temperature of about 850.degree.-1000.degree. C. A carrier gas such as nitrogen or carbon dioxide may also be added, if desired. A high concentration of sulfur dioxide is a by-product of this process.
    Type: Grant
    Filed: February 28, 1980
    Date of Patent: February 9, 1982
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: Ming-Shing Shen, James M. Chen, Ralph T. Yang
  • Patent number: 4252778
    Abstract: A method for removing sulfurous gases such as H.sub.2 S and COS from a fuel gas is disclosed wherein limestone particulates containing iron sulfide provide catalytic absorption of the H.sub.2 S and COS by the limestone. The method is effective at temperatures of 400.degree. C. to 700.degree. C. in particular.
    Type: Grant
    Filed: December 21, 1978
    Date of Patent: February 24, 1981
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: Ralph T. Yang, Ming-Shing Shen
  • Patent number: 4225572
    Abstract: Lime utilization for sulfurous oxides absorption in fluidized combustion of carbonaceous fuels is improved by impregnation of porous lime particulates with iron oxide. The impregnation is achieved by spraying an aqueous solution of mixed iron sulfate and sulfite on the limestone before transfer to the fluidized bed combustor, whereby the iron compounds react with the limestone substrate to form iron oxide at the limestone surface. It is found that iron oxide present in the spent limestone acts as a catalyst to regenerate the spent limestone in a reducing environment. With only small quantities of iron oxide the calcium can be recycled at a significantly increased rate.
    Type: Grant
    Filed: September 29, 1978
    Date of Patent: September 30, 1980
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: Ming-Shing Shen, Ralph T. Yang
  • Patent number: 4191115
    Abstract: Lime utilization for sulfurous oxides adsorption in fluidized combustion of carbonaceous fuels is improved by impregnation of porous lime particulates with iron oxide. The impregnation is achieved by spraying an aqueous solution of mixed iron sulfate and sulfite on the limestone before transfer to the fluidized bed combustor, whereby the iron compounds react with the limestone substrate to form iron oxide at the limestone surface. The iron oxide present in the spent limestone is found to catalyze the regeneration rate of the spent limestone in a reducing environment. Thus both the calcium and iron components may be recycled.
    Type: Grant
    Filed: June 23, 1978
    Date of Patent: March 4, 1980
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: Ralph T. Yang, Ming-shing Shen
  • Patent number: D334173
    Type: Grant
    Filed: July 17, 1991
    Date of Patent: March 23, 1993
    Assignee: Pan-International Industrial Corp.
    Inventors: Yun-Yu Liu, Ming-Shing Laiw