Abstract: A computing system generates directives of a program. Beam nodes are selected one level at a time from multiple nodes in the tree structure. Each node represents a subset of operations in the program. A first number of the beam nodes are selected at a given level of the tree structure. The selection of the first number of the beam nodes uses a cost model that is based on a neural network. A second number of the beam nodes are selected using a random search. The ratio of the first number to the second number is determined based on a search completion percentage at the given level. A path is identified that passes through respective beam nodes at multiple levels of the tree structure. The path represents a schedule for executing the program on a target machine. Then the directives corresponding to the schedule are generated.

Abstract: Compositions and methods for the preparation of high purity arginase and high efficiency preparation of monosubstituted polyethylene glycol conjugation of arginase are provided, as are methods for using arginase in combination with asparaginase to inhibit cancer cells. High purity arginase is provided by applying an initial high temperature precipitation step, followed by ion exchange to provide arginase at a purity of 90% or greater. Conjugation with either linear or branched polyethylene glycol is performed using a maleimide-derivatized polyethylene glycol at low molar excess relative to arginase and at reduced temperature. Such polyethylene glycol-derivatized arginase is useful in combination with asparaginase in inhibiting the growth of cancer cells, particularly cells that have low endogenous asparaginase expression.

Abstract: A memory device and a semiconductor die are provided. The memory device includes single-level-cells (SLCs) and multi-level-cells (MLCs). Each of the SLCs and the MLCs includes: a phase change layer; and a first electrode, in contact with the phase change layer, and configured to provide joule heat to the phase change layer during a programming operation. The first electrode in each of the MLCs is greater in footprint area as compared to the first electrode in each of the SLCs.

Abstract: A memory device includes a substrate, a first signal line, a first dielectric layer, a phase change layer, a second dielectric layer, a first electrode, a second electrode and a second signal line. The first signal line is disposed over the substrate. The first dielectric layer is disposed over the first signal line. The phase change layer is disposed over the first dielectric layer. The second dielectric layer is disposed over the phase change layer. The first electrode and the second electrode are penetrating through the first dielectric layer, the phase change layer and the second dielectric layer, wherein the phase change layer is located between the first electrode and the second electrode. The second signal line is disposed over the second dielectric layer, wherein the first signal line is electrically connected with the first electrode, and the second signal line is electrically connected with the second electrode.

Abstract: A semiconductor package includes a first redistribution circuit structure, a semiconductor die, and an electrically conductive structure. The semiconductor die is disposed over and electrically coupled to the first redistribution circuit structure. The electrically conductive structure connects a non-active side of the semiconductor die to a conductive feature of the first redistribution circuit structure, where the semiconductor die is thermally couped to the first redistribution circuit structure through the electrically conductive structure, and the electrically conductive structure includes a structure of multi-layer with different materials.

Abstract: Apparatuses, systems, and techniques are presented to generate image data. In at least one embodiment, one or more neural networks are used to cause a lighting effect to be applied to one or more objects within one or more images based, at least in part, on synthetically generated images of the one or more objects.

Abstract: In some embodiments, a method for forming an integrated chip (IC) is provided. The method incudes forming an interlayer dielectric (ILD) layer over a substrate. A first opening is formed in the ILD layer and in a first region of the IC. A second opening is formed in the ILD layer and in a second region of the IC. A first high-k dielectric layer is formed lining both the first and second openings. A second dielectric layer is formed on the first high-k dielectric layer and lining the first high-k dielectric layer in both the first and second regions. The second high-k dielectric layer is removed from the first region. A conductive layer is formed over both the first and second high-k dielectric layers, where the conductive layer contacts the first high-k dielectric layer in the first region and contacts the second high-k dielectric in the second region.

Abstract: A phase change random access memory (PCRAM) device includes a memory cell overlying an inter-metal dielectric (IMD) layer, a protection coating, and a first sidewall spacer. The memory cell includes a bottom electrode, a top electrode and a phase change element between the top electrode and the bottom electrode. The protection coating is on an outer sidewall of the phase change element. The first sidewall spacer is on an outer sidewall of the protection coating. The first sidewall spacer has a greater nitrogen atomic concentration than the protection coating. The protection coating forms a first interface with the phase change element. The first interface has a first slope at a first position and a second slope at a second position higher than the first position, the second slope is different from the first slope.

Abstract: A memory device and a fabrication method thereof are provided. The memory device includes a substrate, a seed layer over the substrate, a superlattice structure in contact with the seed layer and a top electrode over the superlattice structure. The seed layer comprises carbon and silicon. The superlattice structure comprises first metal layers and second metal layers stacked alternately.

Abstract: An automatic locking device for assembling a part to a workpiece is provided. The device includes a feeding mechanism, a fixture mechanism, a loading and unloading mechanism, a lifting mechanism, a rotating mechanism, and a locking mechanism. The feeding mechanism feeds the part to the fixture mechanism. The loading and unloading mechanism places the workpiece on the part. The lifting mechanism lifts up the fixture mechanism together with the part and the workpiece. The rotating mechanism rotates the fixture mechanism. The locking mechanism locks the part to the workpiece after the part and the workpiece are rotated by the rotating mechanism. The automatic locking device integrates multiple functions in a single station, reduces the number of the work stations and operatives, lowers the cost, and improves accuracy of the assembly. An assembling apparatus including the automatic locking device is also provided.

Abstract: A headset with ambient sound aware function may include at least one microphone (MIC), a storage device, and a processing circuit. The at least one MIC may be arranged to pick up an ambient sound. The storage device may be arranged to store at least one predetermined sound class. The processing circuit may be arranged to receive the ambient sound sent by the at least one MIC, and analyze the ambient sound to detect whether the ambient sound belongs to the at least one predetermined sound class.

Abstract: Semiconductor devices and methods of manufacturing the same are provided in which memory cells are manufactured with a double sided word line structure. In embodiments a first word line is located on a first side of the memory cells and a second word line is located on a second side of the memory cells opposite the first side.

Abstract: A self-healing elastomeric compound for use in blowout preventer packers includes one or more elastomers, carbon black, silica, and a self-healing agent evenly distributed throughout the compound.

Abstract: A method of manufacturing a semiconductor device includes forming a first semiconductor layer having a first composition over a semiconductor substrate, and forming a second semiconductor layer having a second composition over the first semiconductor layer. Another first semiconductor layer having the first composition is formed over the second semiconductor layer. A third semiconductor layer having a third composition is formed over the another first semiconductor layer. The first semiconductor layers, second semiconductor layer, and third semiconductor layer are patterned to form a fin structure. A portion of the third semiconductor layer is removed thereby forming a nanowire comprising the second semiconductor layer, and a conductive material is formed surrounding the nanowire. The first semiconductor layers, second semiconductor layer, and third semiconductor layer include different materials.

Abstract: A semiconductor device includes a memory structure over a substrate, wherein the memory structure includes a first word line; a first bit line over the first word line; a second bit line over the first bit line; a memory material over sidewalls of the first bit line and the second bit line; a first control word line along a first side of the memory material, wherein the first control word line is electrically connected to the first word line; a second control word line along a second side of the memory material that is opposite the first side; and a second word line over the second bit line, the first control word line, and the second control word line, wherein the second word line is electrically connected to the second control word line.

Abstract: A method of fabricating a decorated molding article includes forming an all-in-one coating on a substrate and performing a curing step, thereby forming a composite layer structure with a protective effect, a color effect, and a bonding effect. The composite layer structure may form a molded film with better physical properties (e.g., higher hardness, better protection effect, and the like) after the blister molding process. Therefore, the molded film of the embodiments may be applied to a laser engraving process to form a variety of light-transmitting decorated molding articles.

Abstract: Semiconductor devices and methods of manufacturing the same are provided in which memory cells are manufactured with a double sided word line structure. In embodiments a first word line is located on a first side of the memory cells and a second word line is located on a second side of the memory cells opposite the first side.

Abstract: A device includes a bottom electrode, a first memory layer, a second memory layer, and a top electrode. The bottom electrode is over a substrate. The first memory layer is over the bottom electrode. A sidewall of the first memory layer is curved. The second memory layer is over the bottom memory layer. The top electrode is over the top memory layer.

Abstract: A semiconductor device includes a memory structure over a substrate, wherein the memory structure includes a first word line; a first bit line over the first word line; a second bit line over the first bit line; a memory material over sidewalls of the first bit line and the second bit line; a first control word line along a first side of the memory material, wherein the first control word line is electrically connected to the first word line; a second control word line along a second side of the memory material that is opposite the first side; and a second word line over the second bit line, the first control word line, and the second control word line, wherein the second word line is electrically connected to the second control word line.

Abstract: The invention provides a low-temperature hydrogen oxidation system comprising at least one hydrogen oxidation device, at least one hydrogen reaction module is disposed in the hydrogen oxidation device, at least one hydrogen reaction channel is formed in the hydrogen reaction module and is provided with at least one catalyst, the hydrogen oxidation device is provided with at least one gas inlet channel and at least one gas outlet channel to communicate with the hydrogen reaction channel, at least one cooling channel is further formed in the hydrogen oxidation device; and at least one gas humidifying device disposed at a position of the gas inlet channel.