Abstract: A single wafer spin cleaning apparatus with soaking, cleaning, and etching functions in accordance with the present invention includes a spin driver device, a wafer spin chuck, and a wafer support disk. The wafer spin chuck is driven by the spin driver device to spin. The wafer support disk is annular and surrounds the wafer spin chuck, can act relative to the wafer spin chuck to a wafer support position or a wafer disengagement position, and includes a soaking trough. The wafer support disk at the wafer support position can support a wafer such that the wafer is soaked in processing liquid injected in the soaking trough for implementing a high efficient cleaning or etching process.

Abstract: The present disclosure relates to a system, a method and a computer-readable medium for rendering a streaming on a user terminal. The method includes rendering the streaming in a first mode, receiving an environment parameter of the user terminal, receiving a timing when the user terminal closes the streaming, determining a threshold value of the environment parameter based on the timing the user terminal closes the streaming, receiving an updated environment parameter of the user terminal, and rendering the streaming in a second mode if the updated environment parameter meets the threshold value. The second mode includes fewer data objects than the first mode or includes a downgraded version of a data object in the first mode for the rendering. The present disclosure can customize the rendering mode for each user and maximize the satisfaction of viewing streaming for each user.

Abstract: A wheel control mechanism includes a support base, a wheel module, a first magnetic module and a second magnetic module. The wheel module, the first magnetic module and the second magnetic module are installed on the support base. The first magnetic module generates a magnetic attractive force to attract a metal ratchet of the wheel module. By adjusting the position of the second magnetic module relative to the first magnetic module, the strength of the magnetic attractive force is changed. Consequently, the rotation of the wheel module results in a tactile feel or does not result in the tactile feel.

Abstract: The switching device includes three terminals including an inner surface, an oxide layer on the inner surface of the third terminal, and a chalcogenide pillar extending through the oxide layer and the third terminal, the pillar being in electrical communication with the first terminal and the second terminal, wherein the voltage difference between the first terminal and the second terminal changes the channel from a first state to a second state when a threshold voltage between the first terminal and the second terminal is exceeded, the threshold voltage being dependent on temperature. The third terminal is resistive and receives a control signal to apply heat to the pillar and modulate the threshold voltage. The switching device can be used to select the memory stack through the bitline and provide a nearly limitless current based on the threshold switching conduction providing avalanche current conduction through the switching device.

Abstract: The switching device includes three terminals including an inner surface, an oxide layer on the inner surface of the third terminal, and a chalcogenide pillar extending through the oxide layer and the third terminal, the pillar being in electrical communication with the first terminal and the second terminal, wherein the voltage difference between the first terminal and the second terminal changes the channel from a first state to a second state when a threshold voltage between the first terminal and the second terminal is exceeded, the threshold voltage being dependent on temperature. The third terminal is resistive and receives a control signal to apply heat to the pillar and modulate the threshold voltage. The switching device can be used to select the memory stack through the bitline and provide a nearly limitless current based on the threshold switching conduction providing avalanche current conduction through the switching device.

Abstract: An electronic module having an electromagnetic shielding structure and its manufacturing method are provided. At first, a first substrate and a second substrate are separately provided. At least one electronic element and at least one connection pad are formed on a surface of the first substrate. The second substrate includes a conductive film and at least one conductive bump is formed on a surface of the conductive film. The first substrate and the second substrate are laminated together wherein the conductive bump is aligned with and connected to the connection pad to obtain the electronic module.

Abstract: A resistive memory device, such as a BMC ReRAM device, includes at least one resistive memory element which contains a carbon barrier material portion and a resistive memory material portion that is disposed between a first electrode and a second electrode.

Abstract: A method is provided that includes forming a word line above a substrate, the word line disposed in a first direction, forming a bit line above the substrate, the bit line disposed in a second direction perpendicular to the first direction, forming a nonvolatile memory material between the word line and the bit line, and forming a memory cell including the nonvolatile memory material at an intersection of the bit line and the word line. The word line includes a first portion and a second portion including an electrically conductive carbon-containing material. The nonvolatile memory material includes a semiconductor material layer and a conductive oxide material layer, with the semiconductor material layer disposed adjacent the second portion of the word line.

Abstract: A method is provided that includes forming a word line above a substrate, the word line disposed in a first direction, forming a bit line above the substrate, the bit line disposed in a second direction perpendicular to the first direction, forming a nonvolatile memory material between the word line and the bit line, the nonvolatile memory material including a semiconductor material layer and conductive oxide material layer, forming a first barrier material layer between the word line and the nonvolatile memory material, forming a second barrier material layer between the bit line and the nonvolatile memory material, and forming a memory cell including the nonvolatile memory material at an intersection of the bit line and the word line.

Abstract: Systems and methods for providing a Barrier Modulated Cell (BMC) structure that may comprise a reversible resistance-switching memory element within a memory array are described. The BMC structure may include a barrier layer comprising a layer of amorphous germanium or amorphous silicon germanium paired with a conductive metal oxide, such as titanium dioxide (TiO2), strontium titanate (SrTiO3), or a binary metal oxide. The BMC structure may include a conductive metal oxide in series with an amorphous layer of a low bandgap material. The low bandgap material may comprise a semiconductor material with a bandgap energy (Eg) less than 1.0 eV. The improved BMC structure may be used for providing multi-level memory elements within a three dimensional memory array.

Abstract: A resistive memory device, such as a BMC ReRAM device, includes at least one resistive memory element which contains a carbon barrier material portion and a resistive memory material portion that is disposed between a first electrode and a second electrode.

Abstract: A method is provided that includes forming a word line above a substrate, the word line disposed in a first direction, forming a bit line above the substrate, the bit line disposed in a second direction perpendicular to the first direction, forming a nonvolatile memory material between the word line and the bit line, and forming a memory cell including the nonvolatile memory material at an intersection of the bit line and the word line. The nonvolatile memory material includes a semiconductor material layer, and a conductive oxide material layer including a first conductive oxide material layer portion and a second conductive oxide material layer portion. The method also includes forming a barrier material layer between the first conductive oxide material layer portion and the second conductive oxide material layer portion.

Abstract: A method is provided that includes forming a word line above a substrate, forming a bit line above the substrate, forming a nonvolatile memory material between the word line and the bit line, the nonvolatile memory material including a semiconductor material layer and a conductive oxide material layer, forming a barrier material layer between the semiconductor material layer and the conductive oxide material layer, and forming a memory cell including the nonvolatile memory material at an intersection of the bit line and the word line. The word line is disposed in a first direction, the bit line is disposed in a second direction perpendicular to the first direction. The barrier material layer has an ionic conductivity of greater than about 0.1 Siemens/cm @ 1000° C.

Abstract: Module and method of a selective electronic-magnetic interference shielding includes a substrate, at least a first electronic element deployed on a principle surface of the substrate, an mold resin covering the first electronic element, and an electronic-magnetic interference shielding, wherein the mold resin has a mold surface relatively far above the substrate and is divided into a central area and an outer area surrounding the central area. The mold resin installs a trench between the central area and the outer area, the trench forms a closed route enfolding the first electronic element, and the electro-magnetic interference shielding distributes over the central area and the trench. Therefore the module and method of a selective electronic-magnetic interference shielding is adaptable to various required designs with lower manufacturing cost.

Abstract: A method is provided that includes forming a word line above a substrate, the word line disposed in a first direction, forming a bit line above the substrate, the bit line disposed in a second direction perpendicular to the first direction, forming a nonvolatile memory material between the word line and the bit line, and forming a memory cell including the nonvolatile memory material at an intersection of the bit line and the word line. The word line includes a first portion and a second portion including an electrically conductive carbon-containing material. The nonvolatile memory material includes a semiconductor material layer and a conductive oxide material layer, with the semiconductor material layer disposed adjacent the second portion of the word line.

Abstract: A method is provided that includes forming a word line above a substrate, the word line disposed in a first direction, forming a bit line above the substrate, the bit line disposed in a second direction perpendicular to the first direction, forming a nonvolatile memory material between the word line and the bit line, the nonvolatile memory material including a semiconductor material layer and conductive oxide material layer, forming a first barrier material layer between the word line and the nonvolatile memory material, forming a second barrier material layer between the bit line and the nonvolatile memory material, and forming a memory cell including the nonvolatile memory material at an intersection of the bit line and the word line.

Abstract: A device includes a spacer, which includes a recess extending from a top surface of the spacer into the spacer, and a conductive feature including a first portion and a second portion continuously connected to the first portion. The first portion extends into the recess. The second portion is on the top surface of the spacer. A die is attached to the spacer, and a lower portion of the first die extends into the recess.

Abstract: Systems and methods for providing a Barrier Modulated Cell (BMC) structure that may comprise a reversible resistance-switching memory element within a memory array are described. The BMC structure may include a barrier layer comprising a layer of amorphous germanium or amorphous silicon germanium paired with a conductive metal oxide, such as titanium dioxide (TiO2), strontium titanate (SrTiO3), or a binary metal oxide. The BMC structure may include a conductive metal oxide in series with an amorphous layer of a low bandgap material. The low bandgap material may comprise a semiconductor material with a bandgap energy (Eg) less than 1.0 eV. The improved BMC structure may be used for providing multi-level memory elements within a three dimensional memory array.

Abstract: Systems and methods for providing a Barrier Modulated Cell (BMC) structure that may comprise a reversible resistance-switching memory element within a memory array are described. The BMC structure may include a barrier layer comprising a layer of amorphous germanium or amorphous silicon germanium paired with a conductive metal oxide, such as titanium dioxide (TiO2), strontium titanate (SrTiO3), or a binary metal oxide. The BMC structure may include a conductive metal oxide in series with an amorphous layer of a low bandgap material. The low bandgap material may comprise a semiconductor material with a bandgap energy (Eg) less than 1.0 eV. The improved BMC structure may be used for providing multi-level memory elements within a three dimensional memory array.

Abstract: A resistive memory device includes a first electrode, a sidewall spacer electrode located on a sidewall of a dielectric material contacting the first electrode, a resistive memory cell containing a resistive memory material and contacting the sidewall spacer electrode, and a second electrode containing the resistive memory cell.