Abstract: In a temperature sensor, a wearable device comprising the temperature sensor, and a core temperature measurement method using the temperature sensor, the temperature sensor includes a sensing unit and a substrate. The sensing unit includes a base part, a measuring part mounted on the base part and configured to measure a temperature of a subject body by making contact with the subject body, and a cover part configured to cover the measuring part. The sensing unit is mounted on the substrate. A plurality of slits is formed around a first area of the substrate, and the sensing unit is mounted at the first area of the substrate.

Abstract: The present invention relates to a heat-storing and retaining fleece using a polyester yarn containing composite metal oxide particles. The heat-storing and retaining fleece of the present invention exhibits an excellent far-infrared emission property, an excellent heat-storing and retaining property, excellent spinning processability, and excellent dyeability.

Abstract: Methods, systems, and devices are disclosed for implementing semiconductor memory using variable resistance elements for storing data. In one aspect, an electronic device is provided to comprise a semiconductor memory unit including: a substrate; an interlayer dielectric layer disposed over the substrate; and a variable resistance element including a seed layer formed over the interlayer dielectric layer, a first magnetic layer formed over the seed layer, a tunnel barrier layer formed over the first magnetic layer, and a second magnetic layer formed over the tunnel barrier layer, wherein the seed layer includes a conductive material having a metallic property and an oxygen content of 1% to approximately 10%.

Abstract: Methods, systems, and devices are disclosed for implementing semiconductor memory using variable resistance elements for storing data. In one aspect, an electronic device is provided to comprise a semiconductor memory unit including: a substrate; an interlayer dielectric layer disposed over the substrate; and a variable resistance element including a seed layer formed over the interlayer dielectric layer, a first magnetic layer formed over the seed layer, a tunnel barrier layer formed over the first magnetic layer, and a second magnetic layer formed over the tunnel barrier layer, wherein the seed layer includes a conductive material having a metallic property and an oxygen content of 1% to approximately 10%.

Abstract: Methods, systems, and devices are disclosed for implementing semiconductor memory using variable resistance elements for storing data. In one aspect, an electronic device is provided to comprise a semiconductor memory unit including: a substrate; an interlayer dielectric layer disposed over the substrate; and a variable resistance element including a seed layer formed over the interlayer dielectric layer, a first magnetic layer formed over the seed layer, a tunnel barrier layer formed over the first magnetic layer, and a second magnetic layer formed over the tunnel barrier layer, wherein the seed layer includes a conductive material having a metallic property and an oxygen content of 1% to approximately 10%.

Abstract: The present invention relates to a method for producing a functional yarn, in which zirconium phosphate having a multiple-layered structure is used as a deodorizing material and a melted polymer is spun through a spinning nozzle having a multi-lobal sectional shape. According to the present invention, the melted polymer contains layered fine zirconium phosphate inorganic particles having low hardness, and thus the abrasion of production process equipment can be minimized during fiber production and also an excellent deodorizing property and an excellent sweat-absorbing and quick-drying property are exhibited.

Abstract: Electronic devices and systems having semiconductor memory are provided. In one implementation, for example, an electronic device may include a substrate; an under layer disposed over the substrate and including conductive hafnium silicate; a free layer disposed over the under layer and having a variable magnetization direction; a tunnel barrier layer disposed over the free layer; and a pinned layer disposed over the tunnel barrier layer and having a pinned magnetization direction, and wherein the free layer includes: a first ferromagnetic material; a second ferromagnetic material having a coercive force smaller than that of the first ferromagnetic material; and an amorphous spacer interposed between the first ferromagnetic material and the second ferromagnetic material.

Abstract: The present invention is directed to a method for preparing a polyester fiber, the method including: mixing 5-50 wt % of composite metal oxide particles, including a tungsten-based oxide, a cesium-based oxide, an antimony-based oxide, an indium-based oxide, and a tin-based oxide, with 40-90 wt % of one or two types of organic solvents selected from among alcohol, ketone, and acetates, 0.4-20 wt % of polyvinyl butyral, i.e., polymer, and 2-30 wt % of calcium stearate or magnesium stearate to obtain a mixture, and stirring and grinding the mixture to prepare a dispersion liquid; drying the dispersion liquid to prepare a powdered additive; mixing 1-30 wt % of the additive with polyester chips to obtain a mixture and melting this mixture to prepare master batch chips; and mixing 1-10 wt % of the master batch chips with general polyester chips to obtain a mixture, and melting and spinning this mixture.

Abstract: This technology provides an electronic device and a method of fabricating the same. An electronic device in accordance with an implementation of this document includes semiconductor memory, and the semiconductor memory includes an interlayer dielectric layer formed over a substrate and having a contact hole; a lower contact filled in a part of the contact hole; and a variable resistance element which is disposed over and coupled to the lower contact, and has a first part filled in the contact hole and a second part disposed over the first part and protruding over the interlayer dielectric layer, wherein the first part includes a first metal which has a higher electron affinity than a component included in the second part, and an oxide of the first metal is an insulating material.

Abstract: This technology provides an electronic device. An electronic device in accordance with an implementation of this document includes semiconductor memory, and the semiconductor memory includes a contact plug; a first stack structure disposed over the contact plug and coupled to the contact plug, wherein the first stack structure includes a pinning layer controlling a magnetization of a pinned layer; and a second stack structure disposed over the first stack structure and coupled to the first stack structure, wherein the second stack structure includes a MTJ (Magnetic Tunnel Junction) structure which includes the pinned layer having a pinned magnetization direction, a free layer having a variable magnetization direction, and a tunnel barrier layer interposed between the pinned layer and the free layer, wherein a width of the first stack structure is larger than a width of the contact plug and a width of the second stack structure.

Abstract: In one implementation, an electronic device is provided to include a semiconductor memory, wherein the semiconductor memory may include: a variable resistance element including a Magnetic Tunnel Junction (MTJ) structure including a free layer having a changeable magnetization direction free layer, a pinned layer having a fixed magnetization direction and a tunnel barrier layer interposed between the free layer and the pinned layer, and the electronic device may further include, in a first direction in which the free layer, the tunnel barrier layer and the pinned layer are arranged, a first permanent magnet having a first surface facing a first surface of the variable resistance element and spaced from the variable resistance element, wherein a magnetic field generated by the first permanent magnet may have a direction which offsets or reduces an influence of a stray field generated by the pinned layer.

Abstract: Electronic devices and systems having semiconductor memory are provided. In one implementation, for example, an electronic device may include a substrate; an under layer disposed over the substrate and including conductive hafnium silicate; a free layer disposed over the under layer and having a variable magnetization direction; a tunnel barrier layer disposed over the free layer; and a pinned layer disposed over the tunnel barrier layer and having a pinned magnetization direction, and wherein the free layer includes: a first ferromagnetic material; a second ferromagnetic material having a coercive force smaller than that of the first ferromagnetic material; and an amorphous spacer interposed between the first ferromagnetic material and the second ferromagnetic material.

Abstract: In one implementation, an electronic device is provided to include a semiconductor memory, wherein the semiconductor memory may include: a variable resistance element including a Magnetic Tunnel Junction (MTJ) structure including a free layer having a changeable magnetization direction free layer, a pinned layer having a fixed magnetization direction and a tunnel barrier layer interposed between the free layer and the pinned layer, and the electronic device may further include, in a first direction in which the free layer, the tunnel barrier layer and the pinned layer are arranged, a first permanent magnet having a first surface facing a first surface of the variable resistance element and spaced from the variable resistance element, wherein a magnetic field generated by the first permanent magnet may have a direction which offsets or reduces an influence of a stray field generated by the pinned layer.

Abstract: The present invention relates to a method for producing a multifunctional polyester fiber, including: mixing a polyester master batch chip, containing cesium tungsten oxide-based particles, with a general polyester chip; spinning the mixture to form a spun fiber; and cooling the spun fiber using a cooling device having a rotational outflow quenching unit and a nozzle-warming heater, and to a fiber produced by the method. The multifunctional polyester fiber according to the present invention exhibits excellent far-infrared emission properties, thermal storage/insulation properties, spinning processability, and dyeability.

Abstract: This technology provides an electronic device. An electronic device in accordance with an implementation of this document includes semiconductor memory, and the semiconductor memory includes a contact plug; a first stack structure disposed over the contact plug and coupled to the contact plug, wherein the first stack structure includes a pinning layer controlling a magnetization of a pinned layer; and a second stack structure disposed over the first stack structure and coupled to the first stack structure, wherein the second stack structure includes a MTJ (Magnetic Tunnel Junction) structure which includes the pinned layer having a pinned magnetization direction, a free layer having a variable magnetization direction, and a tunnel barrier layer interposed between the pinned layer and the free layer, wherein a width of the first stack structure is larger than a width of the contact plug and a width of the second stack structure.

Abstract: An apparatus and a method for synchronizing left and right streams in a stationary/mobile hybrid 3DTV are disclosed. The apparatus according to an exemplary embodiment may synchronize content streams corresponding to left and right images using a timestamp pairing mode, a timestamp offset mode, and a network time protocol (NTP) synchronization mode.

Abstract: Provided is a video providing method and a video playing method for a three-dimensional (3D) video, and an apparatus for performing the methods. The video providing method may transmit a reconstruction mode for reconstructing a low-resolution additional video having lower resolution than a high-resolution reference video.

Abstract: According to one embodiment, a magnetic memory includes a first metal layer including a first metal, a second metal layer on the first metal layer, the second metal layer including a second metal which is more easily oxidized than the first metal, the second metal layer having a first sidewall portion which contacts the first metal layer, and the second metal layer having a second sidewall portion above the first sidewall portion, the second sidewall portion which steps back from the first sidewall portion, a magnetoresistive element on the second metal layer, a third metal layer on the magnetoresistive element, and a first material which contacts a sidewall portion of the magnetoresistive element and the second sidewall portion of the second metal layer, the first material including an oxide of the second metal.

Abstract: Electronic devices and systems having semiconductor memory are provided. In one implementation, for example, an electronic device may include a substrate; an under layer disposed over the substrate and including conductive hafnium silicate; a free layer disposed over the under layer and having a variable magnetization direction; a tunnel barrier layer disposed over the free layer; and a pinned layer disposed over the tunnel barrier layer and having a pinned magnetization direction, and wherein the free layer includes: a first ferromagnetic material; a second ferromagnetic material having a coercive force smaller than that of the first ferromagnetic material; and an amorphous spacer interposed between the first ferromagnetic material and the second ferromagnetic material.

Abstract: Provided is an electronic device including a semiconductor memory. The semiconductor memory may include: a substrate; a plurality of variable resistance elements formed over the substrate and arranged as a matrix, spacer patterns formed over the substrate to surround the variable resistance elements in the matrix with a thickness sufficient to define contact holes between the variable resistance elements, and a source line contact buried in the contact hole.