Abstract: A touch panel includes: a substrate including a central area and a boundary area; a plurality of touch transmitting electrodes on the substrate; and a plurality of touch receiving electrodes that cross the plurality of touch transmitting electrodes to define a plurality of touch units, wherein one of the plurality of touch transmitting electrodes in the boundary area includes at least one transmitting main electrode, at least one transmitting auxiliary electrode that is parallel to and separated from the at least one transmitting main electrode, and at least one auxiliary connecting electrode that connects together the at least one transmitting main electrode and the at least one transmitting auxiliary electrode, and wherein one of the plurality of touch transmitting electrodes in the central area includes at least one transmitting main electrode but not any transmitting auxiliary electrode and auxiliary connecting electrode.

Abstract: Discussed is a battery module including a battery cell stack in which a plurality of battery cells with electrode leads are stacked, bus bar frame assemblies coupled to the electrode leads, and side frames disposed on opposite sides of the battery cell stack, respectively, and coupled to the bus bar frame assemblies, in which one of the bus bar frame assemblies or the side frames include coupling projections and the other of the bus bar frame assemblies or the side frames may include insertion coupling portions, the bus bar frame assemblies and the side frames are coupled to each other by inserting the coupling projections into the insertion coupling portions, and both an upper surface and a lower surface of the battery cell stack, excluding surfaces thereof to which the side frames and the bus bar frame assemblies are coupled, are open.

Abstract: Provided is a display device including a display panel, an optical sensor, a timing controller, a scan driver, a data driver, and an image controller. The timing controller controls an image refresh rate of the display panel based on are fresh rate control signal. Thus, the display device provides improved visibility.

Abstract: The inventive concept relates to a substrate support unit provided in an apparatus for treating a substrate using plasma. In an embodiment, the substrate support unit includes a dielectric plate on which the substrate is placed, a lower electrode that is disposed under the dielectric plate and that has a first diameter, a power supply rod that applies RF power to the lower electrode and has a second diameter, and a ground member disposed under the lower electrode and spaced apart from the lower electrode by a first gap by an insulating member, the ground member including a plate portion having a through-hole formed therein through which the power supply rod passes, in which the through-hole has a third diameter.

Abstract: Disclosed herein relates to a battery pack, wherein the battery pack has an advantage that in the event of thermal runaway in any of a plurality of cell stack assemblies accommodated therein, the propagation of the generated heat or flame to adjacent assemblies can be minimized, thereby improving the safety of the battery pack against ignition or explosion.

Abstract: A display device includes a first control line, a second control line, and a third control line arranged in a first direction, the first control line being between the second control line and the third control line, a pixel circuit coupled to the first control line, the second control line, and the third control line, a light-emitting element coupled to the pixel circuit, a sensor circuit coupled to the first control line, and having a first connection node between the first control line and the third control line, a light-receiving element coupled to the sensor circuit, and a receive line coupled to the first connection node of the sensor circuit.

Abstract: A positive electrode active material for a secondary battery includes a lithium composite transition metal oxide comprising nickel (Ni), cobalt (Co), and manganese (Mn), and a coating layer formed on surfaces of the lithium composite transition metal oxide, wherein, in the lithium composite transition metal oxide, an amount of the nickel (Ni) in a total amount of transition metals is 60 mol % or more, and an amount of the manganese (Mn) is greater than an amount of the cobalt (Co), and the coating layer comprises a compound represented by Formula 1: LiaM1bOc ??[Formula 1] wherein, M1 includes aluminum (Al) and at least one selected from the group consisting of boron (B), silicon (Si), titanium (Ti), and phosphorus (P), and 1?a?4, 1?b?8, and 1?c?20.

Abstract: A non-volatile memory chip comprises a cell region that includes a first surface, a second surface opposite to the first surface, a first cell structure, and a second cell structure spaced apart from the first cell structure; a peripheral circuit region on the first surface of the cell region, and that includes a first peripheral circuit connected to the first cell structure, a second peripheral circuit connected to the second cell structure, and a connection circuit between the first and second peripheral circuits; a through via between the first and second cell structures and that extends from the second surface of the cell region to the connection circuit of the peripheral circuit region; a redistribution layer that covers the through via on the second surface of the cell region, is connected to the through via, and extends along the second surface; and a chip pad connected to the redistribution layer.

Abstract: In a temperature sensor, a wearable device comprising the temperature sensor, and a core temperature measurement method using the temperature sensor, the temperature sensor includes a sensing unit and a substrate. The sensing unit includes a base part, a measuring part mounted on the base part and configured to measure a temperature of a subject body by making contact with the subject body, and a cover part configured to cover the measuring part. The sensing unit is mounted on the substrate. A plurality of slits is formed around a first area of the substrate, and the sensing unit is mounted at the first area of the substrate.

Abstract: The present invention relates to a heat-storing and retaining fleece using a polyester yarn containing composite metal oxide particles. The heat-storing and retaining fleece of the present invention exhibits an excellent far-infrared emission property, an excellent heat-storing and retaining property, excellent spinning processability, and excellent dyeability.

Abstract: Methods, systems, and devices are disclosed for implementing semiconductor memory using variable resistance elements for storing data. In one aspect, an electronic device is provided to comprise a semiconductor memory unit including: a substrate; an interlayer dielectric layer disposed over the substrate; and a variable resistance element including a seed layer formed over the interlayer dielectric layer, a first magnetic layer formed over the seed layer, a tunnel barrier layer formed over the first magnetic layer, and a second magnetic layer formed over the tunnel barrier layer, wherein the seed layer includes a conductive material having a metallic property and an oxygen content of 1% to approximately 10%.

Abstract: Methods, systems, and devices are disclosed for implementing semiconductor memory using variable resistance elements for storing data. In one aspect, an electronic device is provided to comprise a semiconductor memory unit including: a substrate; an interlayer dielectric layer disposed over the substrate; and a variable resistance element including a seed layer formed over the interlayer dielectric layer, a first magnetic layer formed over the seed layer, a tunnel barrier layer formed over the first magnetic layer, and a second magnetic layer formed over the tunnel barrier layer, wherein the seed layer includes a conductive material having a metallic property and an oxygen content of 1% to approximately 10%.

Abstract: Methods, systems, and devices are disclosed for implementing semiconductor memory using variable resistance elements for storing data. In one aspect, an electronic device is provided to comprise a semiconductor memory unit including: a substrate; an interlayer dielectric layer disposed over the substrate; and a variable resistance element including a seed layer formed over the interlayer dielectric layer, a first magnetic layer formed over the seed layer, a tunnel barrier layer formed over the first magnetic layer, and a second magnetic layer formed over the tunnel barrier layer, wherein the seed layer includes a conductive material having a metallic property and an oxygen content of 1% to approximately 10%.

Abstract: The present invention relates to a method for producing a functional yarn, in which zirconium phosphate having a multiple-layered structure is used as a deodorizing material and a melted polymer is spun through a spinning nozzle having a multi-lobal sectional shape. According to the present invention, the melted polymer contains layered fine zirconium phosphate inorganic particles having low hardness, and thus the abrasion of production process equipment can be minimized during fiber production and also an excellent deodorizing property and an excellent sweat-absorbing and quick-drying property are exhibited.

Abstract: Electronic devices and systems having semiconductor memory are provided. In one implementation, for example, an electronic device may include a substrate; an under layer disposed over the substrate and including conductive hafnium silicate; a free layer disposed over the under layer and having a variable magnetization direction; a tunnel barrier layer disposed over the free layer; and a pinned layer disposed over the tunnel barrier layer and having a pinned magnetization direction, and wherein the free layer includes: a first ferromagnetic material; a second ferromagnetic material having a coercive force smaller than that of the first ferromagnetic material; and an amorphous spacer interposed between the first ferromagnetic material and the second ferromagnetic material.

Abstract: The present invention is directed to a method for preparing a polyester fiber, the method including: mixing 5-50 wt % of composite metal oxide particles, including a tungsten-based oxide, a cesium-based oxide, an antimony-based oxide, an indium-based oxide, and a tin-based oxide, with 40-90 wt % of one or two types of organic solvents selected from among alcohol, ketone, and acetates, 0.4-20 wt % of polyvinyl butyral, i.e., polymer, and 2-30 wt % of calcium stearate or magnesium stearate to obtain a mixture, and stirring and grinding the mixture to prepare a dispersion liquid; drying the dispersion liquid to prepare a powdered additive; mixing 1-30 wt % of the additive with polyester chips to obtain a mixture and melting this mixture to prepare master batch chips; and mixing 1-10 wt % of the master batch chips with general polyester chips to obtain a mixture, and melting and spinning this mixture.

Abstract: This technology provides an electronic device and a method of fabricating the same. An electronic device in accordance with an implementation of this document includes semiconductor memory, and the semiconductor memory includes an interlayer dielectric layer formed over a substrate and having a contact hole; a lower contact filled in a part of the contact hole; and a variable resistance element which is disposed over and coupled to the lower contact, and has a first part filled in the contact hole and a second part disposed over the first part and protruding over the interlayer dielectric layer, wherein the first part includes a first metal which has a higher electron affinity than a component included in the second part, and an oxide of the first metal is an insulating material.

Abstract: This technology provides an electronic device. An electronic device in accordance with an implementation of this document includes semiconductor memory, and the semiconductor memory includes a contact plug; a first stack structure disposed over the contact plug and coupled to the contact plug, wherein the first stack structure includes a pinning layer controlling a magnetization of a pinned layer; and a second stack structure disposed over the first stack structure and coupled to the first stack structure, wherein the second stack structure includes a MTJ (Magnetic Tunnel Junction) structure which includes the pinned layer having a pinned magnetization direction, a free layer having a variable magnetization direction, and a tunnel barrier layer interposed between the pinned layer and the free layer, wherein a width of the first stack structure is larger than a width of the contact plug and a width of the second stack structure.

Abstract: In one implementation, an electronic device is provided to include a semiconductor memory, wherein the semiconductor memory may include: a variable resistance element including a Magnetic Tunnel Junction (MTJ) structure including a free layer having a changeable magnetization direction free layer, a pinned layer having a fixed magnetization direction and a tunnel barrier layer interposed between the free layer and the pinned layer, and the electronic device may further include, in a first direction in which the free layer, the tunnel barrier layer and the pinned layer are arranged, a first permanent magnet having a first surface facing a first surface of the variable resistance element and spaced from the variable resistance element, wherein a magnetic field generated by the first permanent magnet may have a direction which offsets or reduces an influence of a stray field generated by the pinned layer.

Abstract: Electronic devices and systems having semiconductor memory are provided. In one implementation, for example, an electronic device may include a substrate; an under layer disposed over the substrate and including conductive hafnium silicate; a free layer disposed over the under layer and having a variable magnetization direction; a tunnel barrier layer disposed over the free layer; and a pinned layer disposed over the tunnel barrier layer and having a pinned magnetization direction, and wherein the free layer includes: a first ferromagnetic material; a second ferromagnetic material having a coercive force smaller than that of the first ferromagnetic material; and an amorphous spacer interposed between the first ferromagnetic material and the second ferromagnetic material.