Abstract: This invention relates to MRAM technology and new variations on MRAM array architecture to incorporate certain advantages from both cross-point and 1T-1MTJ architectures. The fast read-time and higher signal-to-noise ratio of the 1T-1MTJ architecture and the higher packing density of the cross-point architecture are both exploited by combining certain characteristics of these layouts. A single access transistor 16 is used to read the multiple MRAM cells in a segment of a column, which can be stacked vertically above one another in a plurality of MRAM array layers arranged in a “Z” axis direction.

Abstract: This invention relates to MRAM technology and new variations on MRAM array architecture to incorporate certain advantages from both cross-point and 1T-1MTJ architectures. The fast read-time and higher signal-to-noise ratio of the 1T-1MTJ architecture and the higher packing density of the cross-point architecture are both exploited by combining certain characteristics of these layouts. A single access transistor 16 is used to read the multiple MRAM cells in a segment of a column, which can be stacked vertically above one another in a plurality of MRAM array layers arranged in a “Z” axis direction.

Abstract: This invention relates to MRAM technology and new variations on MRAM array architecture to incorporate certain advantages from both cross-point and 1T-1MTJ architectures. The fast read-time and higher signal-to-noise ratio of the 1T-1MTJ architecture and the higher packing density of the cross-point architecture are both exploited by combining certain characteristics of these layouts. A single access transistor 16 is used to read the multiple MRAM cells in a segment of a column, which can be stacked vertically above one another in a plurality of MRAM array layers arranged in a “Z” axis direction.

Abstract: This invention relates to memory technology and new variations on memory array architecture to incorporate certain advantages from both cross-point and 1T-1Cell architectures. The fast read-time and higher signal-to-noise ratio of the 1T-1Cell architecture and the higher packing density of the cross-point architecture are both exploited by combining certain characteristics of these layouts. A single access transistor 16 is used to read multiple memory cells, which can be stacked vertically above one another in a plurality of memory array layers arranged in a “Z” axis direction.

Abstract: This invention relates to MRAM technology and new variations on MRAM array architecture to incorporate certain advantages from both cross-point and 1T-1MTJ architectures. The fast read-time and higher signal-to-noise ratio of the 1T-1MTJ architecture and the higher packing density of the cross-point architecture are both exploited by combining certain characteristics of these layouts. A single access transistor 16 is used to read the multiple MRAM cells in a segment of a column, which can be stacked vertically above one another in a plurality of MRAM array layers arranged in a “Z” axis direction.

Abstract: This invention relates to MRAM technology and new variations on MRAM array architecture to incorporate certain advantages from both cross-point and 1T-1MTJ architectures. The fast read-time and higher signal-to-noise ratio of the 1T-1MTJ architecture and the higher packing density of the cross-point architecture are both exploited by combining certain characteristics of these layouts. A single access transistor 16 is used to read the multiple MRAM cells in a segment of a column, which can be stacked vertically above one another in a plurality of MRAM array layers arranged in a “Z” axis direction.

Abstract: A method and apparatus for testing a memory device with compressed data using multiple clock edges is disclosed. In one embodiment of the present invention data is written to cells in a memory device, the cells are read to generate read data, the read data is compressed to generate test data, and the test data is produced at a single output on edges of a clock signal.

Abstract: This invention relates to an MRAM array architecture which incorporates certain advantages from both cross-point and 1T-1MTJ architectures during reading operations. The fast read-time and higher signal to noise ratio of the 1T-1MTJ architecture and the higher packing density of the cross-point architecture are both exploited by using a single access transistor to control the reading of multiple stacked columns of MRAM cells each column being provided in a respective stacked memory layer.

Abstract: This invention relates to memory technology and new variations on memory array architecture to incorporate certain advantages from both cross-point and 1T-1Cell architectures. The fast read-time and higher signal-to-noise ratio of the 1T-1Cell architecture and the higher packing density of the cross-point architecture are both exploited by combining certain characteristics of these layouts. A single access transistor 16 is used to read multiple memory cells, which can be stacked vertically above one another in a plurality of memory array layers arranged in a “Z” axis direction.

Abstract: An MRAM device having a plurality of MRAM cells formed of a fixed magnetic layer, a second soft magnetic layer and a dielectric layer interposed between the fixed magnetic layer and the soft magnetic layer. The MRAM cells are all formed simultaneously and at least some of the MRAM cells are designed to function as antifuse devices whereby the application of a selected electrical potential can short the antifuse device to thereby affect the functionality of the MRAM device.

Abstract: This invention relates to memory technology and new variations on memory array architecture to incorporate certain advantages from both cross-point and 1T-1Cell architectures. The fast read-time and higher signal-to-noise ratio of the 1T-1Cell architecture and the higher packing density of the cross-point architecture are both exploited by combining certain characteristics of these layouts. A single access transistor 16 is used to read multiple memory cells, which can be stacked vertically above one another in a plurality of memory array layers arranged in a “Z” axis direction.

Abstract: This invention relates to an MRAM array architecture which incorporates certain advantages from both cross-point and 1T-1MTJ architectures during reading operations. The fast read-time and higher signal to noise ratio of the 1T-1MTJ architecture and the higher packing density of the cross-point architecture are both exploited by using a single access transistor to control the reading of multiple stacked columns of MRAM cells each column being provided in a respective stacked memory layer.

Abstract: This invention relates to MRAM technology and new variations on MRAM array architecture to incorporate certain advantages from both cross-point and 1T-1MTJ architectures. The fast read-time and higher signal-to-noise ratio of the 1T-1MTJ architecture and the higher packing density of the cross-point architecture are both exploited by combining certain characteristics of these layouts. A single access transistor 16 is used to read multiple MRAM cells, which can be stacked vertically above one another in a plurality of MRAM array layers arranged in a “Z” axis direction.

Abstract: An MRAM device having a plurality of MRAM cells formed of a fixed magnetic layer, a second soft magnetic layer and a dielectric layer interposed between the fixed magnetic layer and the soft magnetic layer. The MRAM cells are all formed simultaneously and at least some of the MRAM cells are designed to function as antifuse devices whereby the application of a selected electrical potential can short the antifuse device to thereby affect the functionality of the MRAM device.

Abstract: A memory array architecture incorporates certain advantages from both cross-point and 1T-1Cell architectures during reading operations. The fast read-time and higher signal to noise ratio of the 1T-1Cell architecture and the higher packing density of the cross-point architecture are both exploited by using a single access transistor to control the reading of multiple stacked columns of memory cells, each column being provided in a respective stacked memory layer.

Abstract: An MRAM device having a plurality of MRAM cells formed of a fixed magnetic layer, a second soft magnetic layer and a dielectric layer interposed between the fixed magnetic layer and the soft magnetic layer. The MRAM cells are all formed simultaneously and at least some of the MRAM cells are designed to function as antifuse devices whereby the application of a selected electrical potential can short the antifuse device to thereby affect the functionality of the MRAM device.

Abstract: The invention relates to interconnects for an integrated circuit memory device. Embodiments of the invention include processes to fabricate interconnects for memory devices in relatively few steps. Embodiments of the invention further include memory devices with metallization layers having unequal pitch dimensions in different areas of the chip, thereby permitting simultaneous fabrication of array electrodes and electrical interconnects in different areas of the chip. This reduces the number of fabrication steps used to make interconnects, thereby speeding up fabrication and reducing production costs.

Abstract: The invention relates to interconnects for an integrated circuit memory device. Embodiments of the invention include processes to fabricate interconnects for memory devices in relatively few steps. Embodiments of the invention further include memory devices with metallization layers having unequal pitch dimensions in different areas of the chip, thereby permitting simultaneous fabrication of array electrodes and electrical interconnects in different areas of the chip. This reduces the number of fabrication steps used to make interconnects, thereby speeding up fabrication and reducing production costs.

Abstract: A memory array architecture incorporates certain advantages from both cross-point and 1T-1Cell architectures during reading operations. The fast read-time and higher signal to noise ratio of the 1T-1Cell architecture and the higher packing density of the cross-point architecture are both exploited by using a single access transistor to control the reading of multiple stacked columns of memory cells, each column being provided in a respective stacked memory layer.

Abstract: The invention relates to interconnects for an integrated circuit memory device. Embodiments of the invention include processes to fabricate interconnects for memory devices in relatively few steps. Embodiments of the invention further include memory devices with metallization layers having unequal pitch dimensions in different areas of the chip, thereby permitting simultaneous fabrication of array electrodes and electrical interconnects in different areas of the chip. This reduces the number of fabrication steps used to make interconnects, thereby speeding up fabrication and reducing production costs.