Abstract: The present disclosure concerns a charge-accumulation radiation detector that includes a semiconductor device and specifies an incident time and energy of radiation from a transferred image signal. The radiation detector includes a semiconductor substrate and electrodes disposed on both sides of the semiconductor substrate, and includes a plurality of charge accumulation units inside the semiconductor substrate. The plurality of charge accumulation units is each configured to accumulate charges generated by radiation incident on the semiconductor substrate. The charges accumulated in the charge accumulation units are readable to outside through at least one of the electrodes.

Abstract: The present disclosure concerns a charge-accumulation radiation detector that includes a semiconductor device and specifies an incident time and energy of radiation from a transferred image signal. The radiation detector includes a semiconductor substrate and electrodes disposed on both sides of the semiconductor substrate, and includes a plurality of charge accumulation units inside the semiconductor substrate. The plurality of charge accumulation units is each configured to accumulate charges generated by radiation incident on the semiconductor substrate. The charges accumulated in the charge accumulation units are readable to outside through at least one of the electrodes.

Abstract: An ionizing radiation detection apparatus of the present disclosure includes a first chamber holding a scattering gas thereinside; a first drift plane disposed inside the first chamber; a first electron detection unit disposed inside the first chamber so as to oppose the first drift plane; a second chamber connected to the first chamber, the second chamber holding the scattering gas thereinside; a second drift plane disposed inside the second chamber; a second electron detection unit disposed inside the second chamber so as to oppose the second drift plane; a calibration radiation source; and a control unit configured to compensate for a change in a multiplication factor of a signal output from each of the first electron detection unit and the second electron detection unit.

Abstract: Provided is a target device for scattering a charged particle incident thereon, the device comprising: a base; a reference mark provided on the base and having a range of the charged particle therein smaller than a range of the charged particle in the base; and a shield provided on the base apart from the reference mark and having a range of the charged particle therein smaller than the range of the charged particle in the base.

Abstract: An adjusting method of an X-ray apparatus has a reflection structure, wherein assuming that one end plane of the reflection structure is an inlet port of the X-ray and the other end plane is an outlet port of the X-ray, a pitch of the reflection substrates at the outlet port is wider than that at the inlet port. When the X-ray source exists at a position where a glancing angle at the time when the X-ray enters the inlet port exceeds a critical angle, an intensity of the X-ray emitted from each passage is detected. On the basis of the detected X-ray intensity, a relative position of the X-ray source and the reflection structure is adjusted.

Abstract: A radiation imaging apparatus according to the present invention includes a radiation source, a reflective structure where at least three reflective substrates are arranged with an interval and radiations being incident into a plurality of passages whose both sides are put between the reflective substrate are reflected and parallelized by the reflective substrate at both sides of the passage to be emitted from the passage, a radiation detector, and an image construction unit that constructs an image of an object based on an intensity of the radiation which is emitted from each of the passages, transmits the object and is detected by the radiation detector. When one edge of the reflective structure is an inlet of the radiation and the other edge is an outlet of the radiation, a pitch of the reflective substrates at the outlet is larger than a pitch at the inlet.

Abstract: The present invention provides an X-ray optical apparatus including an X-ray reflective structure in which at least three reflective substrates are arranged with an interval and an X-ray which is incident into a plurality of X-ray passages whose both sides are put between the reflective substrates is reflected from the reflective substrate at both sides of the X-ray passage to be parallelized and emitted from the X-ray passage. When an edge of the X-ray reflective structure is an inlet of the X-ray and the other edge is an outlet of the X-ray, a pitch of the reflective substrates at the outlet is larger than a pitch at the inlet. Therefore, it is possible to efficiently parallelize the incident X-ray to be emitted with a simple structure.

Abstract: The present invention provides a method of adjusting an X-ray optical apparatus which includes: an X-ray source; and a reflective structure where at least three reflective substrate arranged with an interval and X-rays which are incident into a plurality of passages whose both sides are put between the reflective substrates are reflected and parallelized by the reflective substrate at both sides of each passage to be emitted from the passage. When one edge of the reflective structure is an inlet of the X-ray and the other edge is an outlet of the X-ray, a pitch of the reflective substrates at the outlet side is larger than a pitch at the inlet side. The method comprises adjusting the relative positions of the X-ray source and the reflective structure so as to reduce a penumbra amount formed by the X-ray emitted from each of the passages.

Abstract: An adjusting method of an X-ray apparatus has a reflection structure, wherein assuming that one end plane of the reflection structure is an inlet port of the X-ray and the other end plane is an outlet port of the X-ray, a pitch of the reflection substrates at the outlet port is wider than that at the inlet port. When the X-ray source exists at a position where a glancing angle at the time when the X-ray enters the inlet port exceeds a critical angle, an intensity of the X-ray emitted from each passage is detected. On the basis of the detected X-ray intensity, a relative position of the X-ray source and the reflection structure is adjusted.

Abstract: The present invention provides a method of adjusting an X-ray optical apparatus which includes: an X-ray source; and a reflective structure where at least three reflective substrate arranged with an interval and X-rays which are incident into a plurality of passages whose both sides are put between the reflective substrates are reflected and parallelized by the reflective substrate at both sides of each passage to be emitted from the passage. When one edge of the reflective structure is an inlet of the X-ray and the other edge is an outlet of the X-ray, a pitch of the reflective substrates at the outlet side is larger than a pitch at the inlet side. The method comprises adjusting the relative positions of the X-ray source and the reflective structure so as to reduce a penumbra amount formed by the X-ray emitted from each of the passages.

Abstract: A radiation imaging apparatus according to the present invention includes a radiation source, a reflective structure where at least three reflective substrates are arranged with an interval and radiations being incident into a plurality of passages whose both sides are put between the reflective substrate are reflected and parallelized by the reflective substrate at both sides of the passage to be emitted from the passage, a radiation detector, and an image construction unit that constructs an image of an object based on an intensity of the radiation which is emitted from each of the passages, transmits the object and is detected by the radiation detector. When one edge of the reflective structure is an inlet of the radiation and the other edge is an outlet of the radiation, a pitch of the reflective substrates at the outlet is larger than a pitch at the inlet.

Abstract: The present invention provides an X-ray optical apparatus including an X-ray reflective structure in which at least three reflective substrates are arranged with an interval and an X-ray which is incident into a plurality of X-ray passages whose both sides are put between the reflective substrates is reflected from the reflective substrate at both sides of the X-ray passage to be parallelized and emitted from the X-ray passage. When an edge of the X-ray reflective structure is an inlet of the X-ray and the other edge is an outlet of the X-ray, a pitch of the reflective substrates at the outlet is larger than a pitch at the inlet. Therefore, it is possible to efficiently parallelize the incident X-ray to be emitted with a simple structure.

Abstract: A filter used for an exposure apparatus that exposes a plate using a light from a light source includes a light transmitting film configured to transmit the light from the light source, a first rod member that includes plural first rod members, and thermally contacts the light transmitting film, the plural second rod members being rod members and including a second rod member; and a second member that includes plural second rod members, and thermally contacts the light transmitting film and/or the first member, the plural second rod members being other rod members including a second rod member, wherein a heating value transmittable by the first rod member per unit time in a longitudinal direction of the first rod member is smaller than a heating value transmittable by the second rod member per unit time in a longitudinal direction of the second rod member.

Abstract: A measuring method that utilizes a bandpass filter and a measurement apparatus to measure an intensity of light having a predetermined wavelength among lights emitted from a light source, the bandpass filter transmitting the light having the predetermined wavelength, the measurement apparatus measuring an absolute intensity of an incident light includes the steps of measuring an output of the measurement apparatus continuously, stopping or starting an emission of the light source in the measuring step, calculating a first extreme value t?t0?0 and a second extreme value t?t0+0 in the output of the measurement apparatus at time t0 where t is time in the measuring step, and t0 is time when the emission of the light source stops; and calculating a difference between the first extreme value t?t0?0 and the second extreme value t?t0+0.

Abstract: Disclosed is a measuring apparatus for measuring the position, size and/or shape of a light convergent point of an EUV light source. In one preferred form, the apparatus includes a light receiving device for receiving EUV light diverging from a light convergent point, an optical system for directing the EUV light toward the light receiving device, a light blocking member disposed in a portion of light path for the EUV light and having a plurality of openings, and a system for detecting a spatial distribution of the EUV light at the light convergent point, on the basis of reception of EUV light by the light receiving device.

Abstract: An alignment apparatus for aligning with each other a mask stage that supports a mask that has an exposure pattern and a wafer stage that supports an object by using a light with wavelength of 1 nm to 50 nm, said alignment apparatus including a substrate for forming a first reference pattern similar to a second reference pattern formed on the mask or the mask stage, and a detection part for detecting a light from the substrate, wherein said substrate and detection part form a hollow housing, in which a gas is filled.

Abstract: A filter used for an exposure apparatus that exposes a plate using a light from a light source includes a light transmitting film configured to transmit the light from the light source, a first rod member that includes plural first rod members, and thermally contacts the light transmitting film, the plural second rod members being rod members and including a second rod member; and a second member that includes plural second rod members, and thermally contacts the light transmitting film and/or the first member, the plural second rod members being other rod members including a second rod member, wherein a heating value transmittable by the first rod member per unit time in a longitudinal direction of the first rod member is smaller than a heating value transmittable by the second rod member per unit time in a longitudinal direction of the second rod member.

Abstract: Disclosed is a measuring apparatus for measuring the position, size and/or shape of a light convergent point of an EUV light source. In one preferred form, the apparatus includes a light receiving device for receiving EUV light diverging from a light convergent point, an optical system for directing the EUV light toward the light receiving device, a light blocking member disposed in a portion of light path for the EUV light and having a plurality of openings, and a system for detecting a spatial distribution of the EUV light at the light convergent point, on the basis of reception of EUV light by the light receiving device.

Abstract: A measuring method that utilizes a bandpass filter and a measurement apparatus to measure an intensity of light having a predetermined wavelength among lights emitted from a light source, the bandpass filter transmitting the light having the predetermined wavelength, the measurement apparatus measuring an absolute intensity of an incident light includes the steps of measuring an output of the measurement apparatus continuously, stopping or starting an emission of the light source in the measuring step, calculating a first extreme value t?t0?0 and a second extreme value t?t0+0 in the output of the measurement apparatus at time t0 where t is time in the measuring step, and t0 is time when the emission of the light source stops; and calculating a difference between the first extreme value t?t0?0 and the second extreme value t?t0+0.

Abstract: In order to prevent a region of supercooling from increasing and to effect uniform crystal growth, the generation of latent heat is detected from changes in temperature of a crucible or a heater or from changes in heat flow rate and also the position of solid-liquid interface is mathematically found, to control the crucible-descending rate or temperature distribution so that the crystal growth rate can be kept at a predetermined value.