Abstract: Disclosed are an object holding process and and an apparatus therefor in which a process strain of the object can be accurately compensated for. When the exposure operation is started, the bottom surface of the object is held by a holding unit. If the object has a strain, the process strain is calculated. Here, if the process strain is larger than a tolerance, the temperature of the object is set to an object setting temperature in a position other than an exposure position in order to contract or expand the object by a predetermined amount for a magnification correction. The bottom surface of the object is then held by the holding unit again, and the exposure of the object is performed in the exposure position.

Abstract: An exposure method using X-rays from a synchrotron radiation source includes determining a relationship between an X-ray intensity distribution and an exposure amount distribution in an exposure area; and effecting exposure operation while controlling a dose amount for respective positions in the exposure area using the relationship, wherein the dose amount is controlled by changing a driving profile of a movable shutter for controlling the exposure operation, and wherein the relationship is in the form of a proportional coefficient between an X-ray intensity and the exposure amount as a function of position information in the exposure area.

Abstract: A transfer magnification correcting method suited for use in scanning exposure by use of synchrotron radiation or the like. In proximity exposure according to the scanning exposure method by use of synchrotron radiation, the magnification in the scanning direction is corrected by relatively moving a wafer and a mask simultaneously with the scanning. Also, the overall correction of the magnification is performed by changing a proximity gap or adjusting the temperature of the mask or the wafer. As a result, it is possible to correct the transfer magnification separately in the vertical and horizontal directions.

Abstract: In an SOR exposure system for transferring patterns on masks to semiconductor wafers by using SOR radiation reflected by an X-ray reflecting mirror, a first shutter device for shielding at least .gamma. rays and a second shutter device for shielding X-rays are provided between the SOR ring and the mirror inside a beam port, and an exposure adjustment device for adjusting the amount of exposure when a circuit pattern on a mask is transferred to a wafer is provided between the mirror and the wafer. As a result, the human body can be protected against radiation rays, such as gamma rays, generated from the SOR ring when electrons are implanted thereto or when the SOR ring is stopped. Damage to the X-ray reflecting mirror caused by radiation rays is reduced, and stable reflectance of the mirror can be obtained. Maintenance of the SOR exposure system is also made easier.

Abstract: A semiconductor device manufacturing SOR X-ray exposure apparatus wherein, after a mask and a semiconductor wafer are aligned, and SOR X-ray is used to transfer a semiconductor device pattern on the mask onto a resist on the semiconductor wafer. The apparatus includes a mirror unit and an exposure unit for exposing the wafer through the mask to the X-ray from the mirror unit. The mirror unit includes an X-ray mirror for diverging the X-ray in a desired direction, a first chamber for providing a desired vacuum ambience around the X-ray mirror and a first supporting device for supplying the X-ray mirror. The exposure unit includes a shutter for controlling the exposure, a mask stage for holding the mask, a wafer stage for holding the wafer, a second chamber for providing a desired He ambience around the mask stage and the wafer stage, a frame structure for mounting the mask stage and the wafer stage and a second supporting device for supporting the frame structure.

Abstract: A beam position detecting device wherein the intensity of a radiation beam from a synchrotron ring is measured on the basis of electric currents flowing through two wires, while accumulated electric current in the synchrotron ring is measured by using a current transformer. The beam position can be determined accurately on the basis of these measured values.

Abstract: A length measuring device for performing length measurement and an exposure apparatus for performing an exposure operation on a first object having a plurality of alignment patterns thereon, includes an alignment detector for detecting the relative positional relation between the first object and a second object having a plurality of reference alignment patterns used for aligning the first object therewith, and for detecting an alignment condition between the alignment patterns of the first and second objects, a movement device for moving the first and second objects relative to each other, a measurement device for measuring the amount of movement of the movement device, and a length measurement device for performing measurement of the space between the plurality of alignment patterns formed on the first object.

Abstract: Disclosed is a device for determining an angle of incident light or a shift in incident light based on the output value of a detector. In a predetermined angle detection range, a beam of light incident on a detector for detecting the intensity of light incident thereon is restricted such that the amount of light continuously increases or decreases in accordance with the angle between an optical axis of the incident light and a referential axis of an exposure apparatus. Outside of the predetermined angle detection range, the amount of light is restricted depending on the direction in which the optical axis of the light is shifted from the angle detection range. The amount of light incident on the detector continuously increases or decreases in accordance with the angle between the optical axis of the incident light and the referential axis when the light is made incident within the angle detection range by means of the light restriction means.

Abstract: Disclosed are an object holding process and and an apparatus therefor in which a process strain of the object can be accurately compensated for. When the exposure operation is started, the bottom surface of the object is held by a holding unit. If the object has a strain, the process strain is calculated. Here, if the process strain is larger than a tolerance, the temperature of the object is set to an object setting temperature in a position other than an exposure position in order to contract or expand the object by a predetermined amount for a magnification correction. The bottom surface of the object is then held by the holding unit again, and the exposure of the object is performed in the exposure position.

Abstract: An X-ray exposure apparatus using radiation light as exposure light, wherein the apparatus includes: a display device; a detecting device for detecting in each exposure the amount of exposure absorbed by a mask during the exposure; a memory for memorizing an accumulated dose of the mask; and a controller for causing the display device to display a dose of the mask, wherein the dose to be displayed corresponds to the sum of the accumulated dose memorized in the memory and the amount of exposure detected by the detecting device. Also a mask structure suitably usable in such an exposure apparatus.

Abstract: An X-ray exposure apparatus for exposing a semiconductor wafer to a mask with X-rays, to print a pattern of the mask onto the wafer, is disclosed. The ambience within a stage accommodating chamber, accommodating a mask, a semiconductor wafer, and the like, is replaced by helium. Thereafter, a predetermined quantity of helium is supplied into the stage accommodating chamber. This effectively prevents degradation of the purity of helium due to air leakage into the chamber. Therefore, any undesirable decrease in the quantity of X-ray transmission can be avoided. Thus, high-precision and high-throughput exposure is ensured.

Abstract: A wafer table includes a wafer holding surface for holding a wafer by attraction; a flow passageway through which a temperature adjusting medium flows to remove any heat in the wafer table; a temperature measuring system for measuring the temperature of the wafer held by the wafer holding surface; a temperature adjusting system disposed between the wafer holding surface and the flow passageway; a temperature setting system for setting a temperature related to the wafer held by the wafer holding surface; a flow rate controlling system for controlling the flow rate of the temperature adjusting medium to be circulated through the flow passageway; and a temperature controlling system for controlling the operation of the temperature adjusting system related to heat, on the basis of a value set by the temperature setting system and a value measured by the temperature measuring system.

Abstract: An X-ray exposure apparatus for transferring a pattern of a mask to a wafer includes an X-ray source accommodating chamber; a mask chuck for supporting the mask; a wafer chuck for supporting the wafer; a stage for moving the wafer chuck; a stage accommodating chamber for accommodating therein the mask chuck, the wafer chuck and the stage; a barrel for coupling the X-ray source accommodating chamber with the stage accommodating chamber, to define an X-ray projection passageway; a blocking window provided in the X-ray projection passageway, for isolating the ambience in the X-ray accommodating chamber and the ambience in the stage accommodating chamber from each other; and a gas supply port contributable to fill the stage accommodating chamber with a gas ambience of low X-ray absorption, the gas supply port opening to the X-ray projection passageway, at a position between the blocking window and the mask supported by the mask chuck.

Abstract: An X-ray transmitting window for use in X-ray lithography, for allowing transmission therethrough of X-rays from a vacuum ambience to a different ambience, includes an X-ray transmitting film, and a gasket material gas-tightly provided on at least one of opposite surfaces in a peripheral portion of the X-ray transmitting film. The gasket material has a Brinell hardness smaller than that of the X-ray transmitting film. The formed X-ray transmitting window is able to be sandwiched and fastened between a pair of flanges in a gas-tight manner.

Abstract: An exposure apparatus usable with synchrotron radiation source wherein the synchrotron radiation is generated by electron injection into a ring. The exposure apparatus is to transfer a semiconductor element pattern of a mask onto a semiconductor wafer by the synchrotron radiation. The apparatus includes a shutter for controlling the exposure of the wafer. The shutter controls the exposure with the illuminance distribution on the wafer surface taken into account. The illuminance distribution is determined in response to the electron injection, and thereafter, the illuminance distribution is corrected in a predetermined manner. By this, the illuminance distribution data for controlling the shutter always correspond to the actual illuminance distribution. The entire shot areas of the semiconductor wafer are exposed with high precision.

Abstract: An exposure apparatus includes a chamber for placing an article in a predetermined ambience; a holding device for holding the article in the chamber; a fluid supplying device for supplying a temperature adjusting fluid into the holding device through a flow passageway; a detecting device for detecting leakage of the fluid from the flow passageway; and a flow rate controlling device for controlling the flow rate of the fluid to be supplied to the holding device on the basis of the detection by the detecting device.

Abstract: An exposure apparatus for lithographically transferring a pattern of a mask onto a workpiece coated with a radiation sensitive material includes a first filter made the same material as of the substrate of the mask, a second filter formed by a base member made of the same material as the mask substrate and being coated with a radiation sensitive material, an illuminometer for measuring illuminance of light passed through the first and second filters, respectively, and a control device for determining an exposure time for lithographic transfer of the pattern of the mask onto the wafer, on the basis of a difference between a measured value as measured through the first filter and a measured value as measured through the second filter.

Abstract: A substrate holding device includes a holding table having a reduced pressure passageway; a pressure gauge for measuring a value related to the pressure in the reduced pressure passageway; a pump for producing a pressure difference between a first surface of the substrate to be attracted to the holding table and a second surface of the substrate not to be attracted to the holding table; a valve which can be opened/closed for control of the pressure in the reduced pressure passageway; a pressure control system for controlling the opening/closing of the valve on the basis of an output corresponding to the value measured by the pressure gauge; and a temperature control system for controlling the temperature of the holding table.

Abstract: A device for generating X-rays is disclosed, which includes a portion for producing plasma in a predetermined space, for generation of the X-rays, and a wall uni effective to define a surface substantially surrounding the space, the wall unit including a portion which is made of a dielectric material and which is made movable so as to compensate for consumption of the dielectric material due to the production of the plasma by the plasma producing portion. Also, an X-ray exposure apparatus usable with a mask having a pattern and a wafer, for transferring the pattern of the mask onto the wafer, is disclosed.

Abstract: A method and apparatus for inspecting and repairing a mask usable in the manufacture of semiconductor microcircuits, by using an electron beam is disclosed. The inspection and repair of a mask pattern are made in a single apparatus, by using a controlled current of an electron beam. For inspection, the surface of a mask having a mask pattern and a radiation-sensitive layer, covering it, is scanned with an electron beam and, by detecting secondary electrons or reflected electrons caused at that time, the state of the pattern is inspected. If any defect is detected, the portion of the radiation-sensitive layer on the detected defect is irradiated with an electron beam of greater magnitude than that for the inspection and, thereafter, the exposed portion of the radiation-sensitive layer is removed. Then, etching or plating is made to the thus uncovered portion, whereby repair of the mask pattern is made.