Abstract: An alignment apparatus for aligning with each other a mask stage that supports a mask that has an exposure pattern and a wafer stage that supports an object by using a light with wavelength of 1 nm to 50 nm, said alignment apparatus including a substrate for forming a first reference pattern similar to a second reference pattern formed on the mask or the mask stage, and a detection part for detecting a light from the substrate, wherein said substrate and detection part form a hollow housing, in which a gas is filled.

Abstract: A measuring apparatus according for measuring relative positions between a first mark on a movable reticle stage to hold a reticle, and a second mark on a movable object stage to hold an object to be exposed, the apparatus includes a detector for detecting light that has passed the first and second marks, and a processor for calculating the relative positions based on an output of the detector, wherein each of the first and second marks includes plural patterns to direct the light, at least ones of widths and intervals of the plural patterns being non-uniform.

Abstract: A device manufacturing method includes a first exposure step for executing a multiple exposure of a first layer of a substrate by use of plural first masks, a development step for developing the first layer of the substrate and a second exposure step, executed after the development step, for executing a multiple exposure of a second layer of the substrate by use of plural second masks. A portion of at least one of the first masks has a pattern the same as a pattern formed in a portion of at least one of the second masks.

Abstract: An exposure method for exposing a workpiece in a proximity exposure system, includes a first exposure step for printing, by exposure, an image of a first mask pattern on a predetermined portion of the workpiece, and a second exposure step for printing, by exposure, an image of a second mask pattern, different from the first mask pattern, on the predetermined portion of the workpiece, wherein exposures in the first and second exposure steps are performed superposedly, prior to a development process.

Abstract: A proximity X-ray exposure apparatus for irradiating a reticle with X-rays generated from an X-ray source and irradiating a substrate with X-rays that have passed through the reticle. The apparatus includes a plasma X-ray source for generating X-rays by producing plasma, and a control device for controlling X-ray intensity distribution by controlling production of the plasma so that the plasma is produced at a plurality of positions in one irradiating operation of the substrate with the X-rays. The control device controls the X-ray intensity distribution in order to control the plurality of positions so that a required amount of defocusing, which is a size of a projection image corresponding to one point on the reticle formed by irradiating the reticle with X-rays generated at the plurality of positions, can be obtained.

Abstract: An apparatus and method for detecting an alignment mark on a substrate using electron beams. The method include the steps of setting an accelerating voltage of the electron beams in accordance with the layer structure of the substrate, irradiating the substrate with the electron beams having the accelerating voltage set in the setting step, and detecting one of radiation and electrons from the substrate after the irradiating step is performed, and determining the position of the alignment mark based on the detecting operation. The apparatus includes a device for setting such an accelerating voltage, a device for irradiating the substrate with the electron beams, and a detector for detecting one of the radiation and the electrons. In one embodiment, fluorescent X-rays are detected, while in another embodiment secondary electrons or backscattered electrons are detected.

Abstract: A device manufacturing method includes a first step for executing a multiple exposure to a first layer on a substrate, by use of a plurality of first masks, and a second step, to be executed after the first step, for executing a multiple exposure to a second layer on the substrate, by use of a plurality of second masks, wherein one of the second masks has a pattern portion of the same design rule as that of one of the first masks.

Abstract: In order to prevent a region of supercooling from increasing and to effect uniform crystal growth, the generation of latent heat is detected from changes in temperature of a crucible or a heater or from changes in heat flow rate and also the position of solid-liquid interface is mathematically found, to control the crucible-descending rate or temperature distribution so that the crystal growth rate can be kept at a predetermined value.

Abstract: A mask manufacturing method includes performing a multiple exposure process to a substrate so that a number of latent images are formed on the substrate, and processing the exposed substrate to produce actual mask patterns, wherein the multiple exposure process includes a first exposure step for forming a latent image of relatively-fine periodic patterns on the substrate by use of a first master mask having absorptive periodic patterns, and a second exposure step for forming a latent image of relatively-rough patterns on the substrate by use of a second master mask having absorptive patterns.

Abstract: An X-ray exposure apparatus has a plasma X-ray source for generating X-rays by producing a plasma, and a collimator for converging X-rays that diverge from the X-ray source and reducing a global divergence angle to irradiate a mask with the X-rays. A local convergence angle as seen from one point on the mask is changed by moving the position or angle of the collimator in a direction perpendicular or parallel to the axis of the collimator. The pattern on the mask is transferred to a wafer using X-rays having a convergence angle thus controlled. As a result, controllable parameters are increased and a more suitable resist pattern can be obtained. In addition, process tolerance in terms of exposing finer patterns is improved.

Abstract: An apparatus and method for detecting an alignment mark on a substrate using electron beams. The method include the steps of setting an accelerating voltage of the electron beams in accordance with the layer structure of the substrate, irradiating the substrate with the electron beams having the accelerating voltage set in the setting step, and detecting one of radiation and electrons from the substrate after the irradiating step is performed, and determining the position of the alignment mark based on the detecting operation. The apparatus includes a device for setting such an accelerating voltage, a device for irradiating the substrate with the electron beams, and a detector for detecting one of the radiation and the electrons. In one embodiment, fluorescent X-rays are detected, while in another embodiment secondary electrons or backscattered electrons are detected.

Abstract: An exposure method for exposing a workpiece in a proximity exposure system, includes a first exposure step for printing, by exposure, an image of a first mask pattern on a predetermined portion of the workpiece, and a second exposure step for printing, by exposure, an image of a second mask pattern, different from the first mask pattern, on the predetermined portion of the workpiece, wherein exposures in the first and second exposure steps are performed superposedly, prior to a development process.

Abstract: An X-ray exposure apparatus has a laser light source and a copper tape serving as a target. The position at which a plasma is produced on the target is changed by changing the angle of a mirror that is for irradiating the target with laser light. Alternatively, a plurality of lasers are provided and it is so arranged that different positions on the target are irradiated with different lasers. The position at which a plasma is produced on the target is thus changed to generate a plasma at each of a plurality of positions during one exposure operation. By thus irradiating a plurality of locations in an irradiation area on a target with laser light, the amount of defocusing of X-rays on a wafer is controlled so that a mask pattern is transferred to the wafer in reliable fashion.

Abstract: An apparatus and method for detecting an alignment mark on a substrate using electron beams. The method include the steps of setting an accelerating voltage of the electron beams in accordance with the layer structure of the substrate, irradiating the substrate with the electron beams having the accelerating voltage set in the setting step, and detecting one of radiation and electrons from the substrate after the irradiating step is performed, and determining the position of the alignment mark based on the detecting operation. The apparatus includes a device for setting such an accelerating voltage, a device for irradiating the substrate with the electron beams, and a detector for detecting one of the radiation and the electrons. Fluorescent X-rays, secondary electrons or backscattered electrons are detected.

Abstract: An exposure method for posing a workpiece in a proximity exposure system, includes a first exposure step for printing, by exposure, an image of a first mask pattern on a predetermined portion of the workpiece, and a second exposure step for printing, by exposure, an image of a second mask pattern, different from the first mask pattern, on the predetermined portion of the workpiece, wherein exposures in the first and second exposure steps are performed superposedly, prior to a development process.

Abstract: An exposure method for transferring a pattern of a mask onto a workpiece in a proximity exposure system, includes a first exposure step for exposing a predetermined portion of the workpiece, while maintaining a first spacing between the mask and the workpiece, and a second exposure step for exposing the predetermined portion of the workpiece, while maintaining a second spacing, different from the first spacing, between the mask and the workpiece, wherein exposures in the first and second exposure steps are performed superposedly, prior to a development process.

Abstract: An X-ray exposure apparatus has a plasma X-ray source for generating X-rays by producing a plasma, and a collimator for converging X-rays that diverge from the X-ray source and reducing a global divergence angle to irradiate a mask with the X-rays. A local convergence angle as seen from one point on the mask is changed by moving the position or angle of the collimator in a direction perpendicular or parallel to the axis of the collimator. The pattern on the mask is transferred to a wafer using X-rays having a convergence angle thus controlled. As a result, controllable parameters are increased and a more suitable resist pattern can be obtained. In addition, process tolerance in terms of exposing finer patterns is improved.

Abstract: An exposure method for printing a pattern onto a workpiece to be exposed, includes a first exposure step for forming, on the workpiece and by exposure, a transferred image of a first absorbing material pattern formed on a mask and having no periodic structure, and a second exposure step for printing, on the workpiece and by exposure, a diffraction pattern to be produced through Fresnel diffraction due to a second absorbing material pattern formed on the mask and having a periodic structure, the diffraction pattern having a period corresponding to 1/n of a period of the transferred image of the periodic structure pattern, where n is an integer not less than 2, and wherein the first and second exposure steps are performed simultaneously.

Abstract: An exposure apparatus includes a mirror for reflecting radiation light from a light source, a driving mechanism for holding and oscillating the mirror, a detector for detecting the position of a beam of the radiation light projected on the mirror, an adjusting mechanism for adjusting the position of the mirror with respect to the radiation light on the basis of an output of the detector, and a reference table for positioning the driving mechanism and the detector with respect to the same reference.

Abstract: A synchrotron exposure includes a synchrotron radiation source for generating a synchrotron radiation beam, and exposure unit having a mask stage for holding a mask and a wafer stage for holding a waver, a beam port for directing the radiation beam to the exposure unit, a mirror unit having a mirror for reflecting the radiation beam, a pre-alignment system for aligning the wafer relative to the wafer stage, a fine-alignment system for aligning the wafer held by the wafer stage relative to the mask held by the mask stage, a mask storage apparatus for storing the mask, a wafer storage apparatus for storing the wafer, a mask conveying apparatus for conveying the mask between the mask storage apparatus and the mask stage and a wafer conveying apparatus for conveying a wafer between the wafer storage apparatus and the wafer stage.