Abstract: A masterbatch (C) containing thermally expandable microcapsules (A) and a carrier resin composition (B) is provided. The carrier resin composition (B) contains a carrier resin (B1) and a plasticizer (B2), the carrier resin (B1) being an acrylic resin having a weight average molecular weight of 8,000 or more and 350,000 or less, and the plasticizer (B2) being an acrylic plasticizer having a weight average molecular weight of 1,000 or more and 20,000 or less. The carrier resin composition (B) is substantially compatible with a polycarbonate resin and has a shear viscosity of 1.0 Pa·s or more and 1.5×106 Pa·s or less at 80° C. The occurrence of whitening is suppressed and a good appearance can be obtained in an injection molded foam made with the masterbatch. A polycarbonate resin composition, an injection molded foam, and a method for producing an injection molded foam are provided.

Abstract: A masterbatch (C) containing thermally expandable microcapsules (A) and a carrier resin composition (B) is provided. The carrier resin composition (B) contains a carrier resin (B1) and a plasticizer (B2), the carrier resin (B1) being an acrylic resin having a weight average molecular weight of 8,000 or more and 350,000 or less, and the plasticizer (B2) being an acrylic plasticizer having a weight average molecular weight of 1,000 or more and 20,000 or less. The carrier resin composition (B) is substantially compatible with a polycarbonate resin and has a shear viscosity of 1.0 Pa·s or more and 1.5×106 Pa·s or less at 80° C. The occurrence of whitening is suppressed and a good appearance can be obtained in an injection molded foam made with the masterbatch. A polycarbonate resin composition, an injection molded foam, and a method for producing an injection molded foam are provided.

Abstract: An object of the present invention is to provide a foaming vinyl chloride resin composition having excellent foaming properties and providing a foam molded product with an excellent appearance by enhancing the melt strength of the vinyl chloride resin composition. A processability improver for foam molding according to the present invention includes a (meth)acrylic polymer powder with a weight average molecular weight of 2,000,000 to 7,000,000, wherein the (meth)acrylic polymer powder includes 1 to 20% by weight of a (meth)acrylic polymer (A) with a weight average molecular weight of 10,000 to 300,000, and 80 to 99% by weight of a (meth)acrylic polymer (B) with a weight average molecular weight of 2,000,000 to 7,000,000.

Abstract: AC-DC converter is provided which comprises an auxiliary winding 8c in a transformer 8, a voltage detector 21 for detecting a voltage VN appearing on auxiliary winding 8c of transformer 8 by on-off operation of a main switching element 9 in a DC-DC converter 10 to produce an output signal VCP1 when voltage VN on auxiliary winding 8c has a negative polarity, a waveform shaper 23 for generating chopping signals VRC from output signal VCP1 of voltage detector 21, and a PWM circuit 27 for comparing output voltage VRC from waveform shaper 23 and output voltage VCH from a boosting chopper 3 to supply drive signals VG1 to step-up switching element 5 in boosting chopper 3 when output voltage VRC from waveform shaper 23 exceeds output voltage VCH from boosting chopper 3. While controlling fluctuation in output voltage from boosting chopper with respect to fluctuation in AC input voltage, the converter can improve input power factor relative to AC voltage and also reduce consumption power during light load period.

Abstract: An object of the present invention is to provide a foaming vinyl chloride resin composition having excellent foaming properties and providing a foam molded product with an excellent appearance by enhancing the melt strength of the vinyl chloride resin composition. A processability improver for foam molding according to the present invention includes a (meth)acrylic polymer powder with a weight average molecular weight of 2,000,000 to 7,000,000, wherein the (meth)acrylic polymer powder includes 1 to 20% by weight of a (meth)acrylic polymer (A) with a weight average molecular weight of 10,000 to 300,000, and 80 to 99% by weight of a (meth)acrylic polymer (B) with a weight average molecular weight of 2,000,000 to 7,000,000.

Abstract: The present invention provides a (meth)acrylic polymer containing 15 to 65 parts by weight of a polymer (A) having a specific viscosity of 0.90 to 2.00 and containing 70 to 100 weight percent of methyl methacrylate, 0 to 30 weight percent of a (meth)acrylic ester other than methyl methacrylate, and 0 to 10 weight percent of another monomer copolymerizable with these; 20 to 75 parts by weight of a polymer (B) having a specific viscosity of 0.40 or more and less than 0.90 and containing 70 to 100 weight percent of methyl methacrylate, 0 to 30 weight percent of a (meth)acrylic ester other than methyl methacrylate, and 0 to 10 weight percent of another monomer copolymerizable with these; and 1 to 30 parts by weight of a polymer (C) having a specific viscosity of 0.80 to 2.

Abstract: A semiconductor device of the invention includes a substrate in which a power-supply electrode and a ground electrode are provided. A first semiconductor chip is disposed over the substrate and has a first conductor layer formed on a surface facing a second semiconductor chip. A second conductor layer is disposed over the first semiconductor chip and has a second conductor layer formed on a surface facing the first semiconductor chip. And an adhesive layer is disposed between the first conductor layer and the second conductor layer and bonds together the first semiconductor chip and the second semiconductor chip. In the semiconductor device, the adhesive layer and the first and second conductor layers function as a capacitor.

Abstract: AC-DC converter is provided which comprises an auxiliary winding 8c in a transformer 8, a voltage detector 21 for detecting a voltage VN appearing on auxiliary winding 8c of transformer 8 by on-off operation of a main switching element 9 in a DC-DC converter 10 to produce an output signal VCP1 when voltage VN on auxiliary winding 8c has a negative polarity, a waveform shaper 23 for generating chopping signals VRC from output signal VCP1 of voltage detector 21, and a PWM circuit 27 for comparing output voltage VRC from waveform shaper 23 and output voltage VCH from a boosting chopper 3 to supply drive signals VG1 to step-up switching element 5 in boosting chopper 3 when output voltage VRC from waveform shaper 23 exceeds output voltage VCH from boosting chopper 3. While controlling fluctuation in output voltage from boosting chopper with respect to fluctuation in AC input voltage, the converter can improve input power factor relative to AC voltage and also reduce consumption power during light load period.

Abstract: A semiconductor device includes a first semiconductor chip (5) having a first terminal (7) on one surface, a second semiconductor chip (1a) which is larger than the first semiconductor chip (5) and on which the first semiconductor chip (5) is stacked and which has a second terminal (3) on one surface, an insulating layer (10) formed on a second semiconductor chip (1a) to cover the first semiconductor chip (5), a plurality of holes (10a) formed in the insulating layer (10) on at least a peripheral area of the first semiconductor chip (5), a via (11a) formed like a film on inner peripheral surfaces and bottom surfaces of the holes (10a) and connected electrically to the second terminal (3) of the second semiconductor chip (1a), a wiring pattern (11b) formed on an upper surface of the insulating layer (10), and an external terminal (14) formed on the wiring pattern (11b).

Abstract: A semiconductor device with a structure having superior heat sink characteristics. A first heat sink member is located over a wiring board by using an adhesive material. A semiconductor element is stuck over the first heat sink member by using an adhesive material. The semiconductor element and electrodes located over the wiring board are connected by wires. A second heat sink member which covers the semiconductor element and the wires is joined to the first heat sink member by using a conductive adhesive material. The inside and outside of the second heat sink member are sealed by resin except a flat top thereof. By doing so, the semiconductor device is fabricated. Heat which is generated in the semiconductor element and which is transmitted to the first heat sink member is released from an edge portion of the first heat sink member.

Abstract: A thermoplastic resin composition having excellent weather resistance and high impact resistance in the present invention is the thermoplastic resin composition containing 100 parts by weight of a thermoplastic resin (A) and 0.5 to 20 parts by weight of a graft copolymer (B), wherein the graft copolymer (B) consists of 50% to 99.5% by weight of a core (bc) and 0.5% to 50% by weight of a non-crosslinked shell (bs), the core (bc) is constituted of only layer having a glass transition temperature of 20° C. or lower, and the non-crosslinked shell (bs) is obtained by polymerizing a monomer mixture for non-crosslinked shell, containing 52% to 100% by weight of an acrylic ester and 0% to 48% by weight of a vinyl monomer copolymerizable with the acrylic ester.

Abstract: An object of the present invention is to provide a (meth)acrylic polymer in which the occurrence of air marks and flow marks during forming, in particular, calendering is suppressed and a vinyl chloride-based resin composition containing the same. The present invention provides a (meth)acrylic polymer containing 15 to 65 parts by weight of a polymer (A) having a specific viscosity of 0.90 to 2.00 and containing 70 to 100 weight percent of methyl methacrylate, 0 to 30 weight percent of a (meth)acrylic ester other than methyl methacrylate, and 0 to 10 weight percent of another monomer copolymerizable with these; 20 to 75 parts by weight of a polymer (B) having a specific viscosity of 0.40 or more and less than 0.90 and containing 70 to 100 weight percent of methyl methacrylate, 0 to 30 weight percent of a (meth)acrylic ester other than methyl methacrylate, and 0 to 10 weight percent of another monomer copolymerizable with these; and 1 to 30 parts by weight of a polymer (C) having a specific viscosity of 0.

Abstract: A semiconductor device with a structure having superior heat sink characteristics. A first heat sink member is located over a wiring board by using an adhesive material. A semiconductor element is stuck over the first heat sink member by using an adhesive material. The semiconductor element and electrodes located over the wiring board are connected by wires. A second heat sink member which covers the semiconductor element and the wires is joined to the first heat sink member by using a conductive adhesive material. The inside and outside of the second heat sink member are sealed by resin except a flat top thereof. By doing so, the semiconductor device is fabricated. Heat which is generated in the semiconductor element and which is transmitted to the first heat sink member is released from an edge portion of the first heat sink member.

Abstract: Generation of air marks and flow marks is prevented when a vinyl chloride resin is molded into a sheet or the like. To a vinyl chloride resin is added a processing aid for a vinyl chloride resin comprising a copolymer composition containing, (A) 70 to 99 parts by weight of a copolymer obtained by polymerizing a monomer mixture comprising 50 to 99% by weight of methyl methacrylate, 1 to 50% by weight of an aromatic vinyl compound and 0 to 30% by weight of another monomer copolymerizable with these components, said copolymer having a specific viscosity at 30° C. of 0.3 to 1.8 when 0.

Abstract: A method of design of a circuit board enabling high density conductor lines to be drawn efficiently. A rats nest is formed by connecting pads to which terminals of an electronic device are connected and external connection terminals by lines. A region with the highest density of lines of the rats nest is then selected and design rules relating to routes and dimensions of conductor lines are set in the region with the highest density of lines of the rats nest. Conductor lines are then laid at the region with the highest density of lines of the rats nest, and whether or not the conductor lines can be laid at the region with the highest density of lines of the rats nest is confirmed. Setting of the design rules and laying of conductor lines are if the conductor lines cannot be laid, and the conductor lines of the remaining regions are laid by the set design rules if the conductor lines can be laid.

Abstract: A semiconductor device, includes a supporting board; and a semiconductor element mounted on a first main surface of the supporting board. The supporting board includes a first electrode formed on the first main surface, a second electrode formed on a second main surface, and an opening or notch forming part. A first electrode pad of the semiconductor element faces and is connected to the first electrode of the supporting board. A second electrode pad of the semiconductor element and the second electrode of the supporting board are electrically connected via the opening or notch forming part.

Abstract: A semiconductor device of the invention includes a substrate in which a power-supply electrode and a ground electrode are provided. A first semiconductor chip is disposed over the substrate and has a first conductor layer formed on a surface facing a second semiconductor chip. A second conductor layer is disposed over the first semiconductor chip and has a second conductor layer formed on a surface facing the first semiconductor chip. And an adhesive layer is disposed between the first conductor layer and the second conductor layer and bonds together the first semiconductor chip and the second semiconductor chip. In the semiconductor device, the adhesive layer and the first and second conductor layers function as a capacitor.

Abstract: A semiconductor device includes a first semiconductor chip (5) having a first terminal (7) on one surface, a second semiconductor chip (1a) which is larger than the first semiconductor chip (5) and on which the first semiconductor chip (5) is stacked and which has a second terminal (3) on one surface, an insulating layer (10) formed on a second semiconductor chip (1a) to cover the first semiconductor chip (5), a plurality of holes (10a) formed in the insulating layer (10) on at least a peripheral area of the first semiconductor chip (5), a via (11a) formed like a film on inner peripheral surfaces and bottom surfaces of the holes (10a) and connected electrically to the second terminal (3) of the second semiconductor chip (1a), a wiring pattern (11b) formed on an upper surface of the insulating layer (10), and an external terminal (14) formed on the wiring pattern (11b).

Abstract: A semiconductor device includes a first semiconductor chip (5) having a first terminal (7) on one surface, a second semiconductor chip (1a) which is larger than the first semiconductor chip (5) and on which the first semiconductor chip (5) is stacked and which has a second terminal (3) on one surface, an insulating layer (10) formed on a second semiconductor chip (1a) to cover the first semiconductor chip (5), a plurality of holes (10a) formed in the insulating layer (10) on at least a peripheral area of the first semiconductor chip (5), a via (11a) formed like a film on inner peripheral surfaces and bottom surfaces of the holes (10a) and connected electrically to the second terminal (3) of the second semiconductor chip (1a), a wiring pattern (11b) formed on an upper surface of the insulating layer (10), and an external terminal (14) formed on the wiring pattern (11b).