Patents by Inventor Mitsuyoshi Mori
Mitsuyoshi Mori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9935149Abstract: A solid-state imaging device according to the present disclosure includes: a charge storage region that stores a signal charge obtained through photoelectric conversion in a photoelectric conversion film; an amplification transistor that amplifies the signal charge stored in the charge storage region in a corresponding pixel; a contact plug that is electrically connected to the charge storage region and contains a semiconductor material; and a line that is disposed above the contact plug and contains a semiconductor material. The contact plug and the charge storage region are electrically connected, and the contact plug and a gate electrode of the amplification transistor are electrically connected via the line.Type: GrantFiled: February 24, 2017Date of Patent: April 3, 2018Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Mitsuyoshi Mori, Ryohei Miyagawa, Yoshiyuki Ohmori, Yoshihiro Sato, Yutaka Hirose, Yusuke Sakata, Toru Okino
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Publication number: 20180048839Abstract: A solid-state imaging device according to the present disclosure includes pixels arranged two-dimensionally, each of the pixels including: a metal electrode; a photoelectric conversion layer that is on the metal electrode and converts light into an electrical signal; a transparent electrode on the photoelectric conversion layer; an electric charge accumulation region that is electrically connected to the metal electrode and accumulates electric charges from the photoelectric conversion layer; an amplifier transistor that applies a signal voltage according to an amount of the electric charges in the electric charge accumulation region; and a reset transistor that resets electrical potential of the electric charge accumulation region, in which the reset transistor includes a gate oxide film thicker than a gate oxide film of the amplifier transistor.Type: ApplicationFiled: September 29, 2017Publication date: February 15, 2018Inventors: Mitsuyoshi MORI, Hirohisa OHTSUKI, Yoshiyuki OHMORI, Yoshihiro SATO, Ryohei MIYAGAWA
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Publication number: 20170345865Abstract: A solid-state imaging device includes: a first electrode formed above a semiconductor substrate; a photoelectric conversion film formed on the first electrode and for converting light into signal charges; a second electrode formed on the photoelectric conversion film; a charge accumulation region electrically connected to the first electrode and for accumulating the signal charges converted from the light by the photoelectric conversion film; a reset gate electrode for resetting the charge accumulation region; an amplification transistor for amplifying the signal charges accumulated in the charge accumulation region; and a contact plug in direct contact with the charge accumulation region, comprising a semiconductor material, and for electrically connecting to each other the first electrode and the charge accumulation region.Type: ApplicationFiled: August 16, 2017Publication date: November 30, 2017Inventors: Yusuke SAKATA, Mitsuyoshi MORI, Yutaka HIROSE, Hiroshi MASUDA, Hitoshi KURIYAMA, Ryohei MIYAGAWA
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Patent number: 9813651Abstract: A solid-state imaging device according to the present disclosure includes pixels arranged two-dimensionally, each of the pixels including: a metal electrode; a photoelectric conversion layer that is on the metal electrode and converts light into an electrical signal; a transparent electrode on the photoelectric conversion layer; an electric charge accumulation region that is electrically connected to the metal electrode and accumulates electric charges from the photoelectric conversion layer; an amplifier transistor that applies a signal voltage according to an amount of the electric charges in the electric charge accumulation region; and a reset transistor that resets electrical potential of the electric charge accumulation region, in which the reset transistor includes a gate oxide film thicker than a gate oxide film of the amplifier transistor.Type: GrantFiled: December 22, 2014Date of Patent: November 7, 2017Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Mitsuyoshi Mori, Hirohisa Ohtsuki, Yoshiyuki Ohmori, Yoshihiro Sato, Ryohei Miyagawa
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Patent number: 9768226Abstract: A solid-state imaging device includes: a first electrode formed above a semiconductor substrate; a photoelectric conversion film formed on the first electrode and for converting light into signal charges; a second electrode formed on the photoelectric conversion film; a charge accumulation region electrically connected to the first electrode and for accumulating the signal charges converted from the light by the photoelectric conversion film; a reset gate electrode for resetting the charge accumulation region; an amplification transistor for amplifying the signal charges accumulated in the charge accumulation region; and a contact plug in direct contact with the charge accumulation region, comprising a semiconductor material, and for electrically connecting to each other the first electrode and the charge accumulation region.Type: GrantFiled: December 18, 2013Date of Patent: September 19, 2017Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Yusuke Sakata, Mitsuyoshi Mori, Yutaka Hirose, Hiroshi Masuda, Hitoshi Kuriyama, Ryohei Miyagawa
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Publication number: 20170229599Abstract: A photodiode that multiplies a charge generated by photoelectric conversion in an avalanche region includes: a p? type semiconductor layer having interfaces; an n+ type semiconductor region located inside the p? type semiconductor layer and in contact with the interface; an n+ type semiconductor region located inside the p? type semiconductor layer and connected to the n+ type semiconductor region; and a p type semiconductor region located between the n+ type semiconductor region and the interface, wherein the n+ type semiconductor region, the n+ type semiconductor region, and the p type semiconductor region each have a higher impurity concentration than the p? type semiconductor layer, the avalanche region is a region between the n+ type semiconductor region and the p type semiconductor region inside the p? type semiconductor layer, and the n+ type semiconductor region has a smaller area than the n+ type semiconductor region in planar view.Type: ApplicationFiled: July 9, 2015Publication date: August 10, 2017Inventors: Yusuke SAKATA, Manabu USUDA, Mitsuyoshi MORI, Yutaka HIROSE, Yoshihisa KATO
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Publication number: 20170170226Abstract: A solid-state imaging device according to the present disclosure includes: a charge storage region that stores a signal charge obtained through photoelectric conversion in a photoelectric conversion film; an amplification transistor that amplifies the signal charge stored in the charge storage region in a corresponding pixel; a contact plug that is electrically connected to the charge storage region and contains a semiconductor material; and a line that is disposed above the contact plug and contains a semiconductor material. The contact plug and the charge storage region are electrically connected, and the contact plug and a gate electrode of the amplification transistor are electrically connected via the line.Type: ApplicationFiled: February 24, 2017Publication date: June 15, 2017Inventors: Mitsuyoshi MORI, Ryohei MIYAGAWA, Yoshiyuki OHMORI, Yoshihiro SATO, Yutaka HIROSE, Yusuke SAKATA, Toru OKINO
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Patent number: 9627431Abstract: A solid-state imaging device according to the present disclosure includes: a charge storage region that stores a signal charge obtained through photoelectric conversion in a photoelectric conversion film; an amplification transistor that amplifies the signal charge stored in the charge storage region in a corresponding pixel; a contact plug that is electrically connected to the charge storage region and contains a semiconductor material; and a line that is disposed above the contact plug and contains a semiconductor material. The contact plug and the charge storage region are electrically connected, and the contact plug and a gate electrode of the amplification transistor are electrically connected via the line.Type: GrantFiled: December 16, 2014Date of Patent: April 18, 2017Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Mitsuyoshi Mori, Ryohei Miyagawa, Yoshiyuki Ohmori, Yoshihiro Sato, Yutaka Hirose, Yusuke Sakata, Toru Okino
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Patent number: 9554066Abstract: A solid-state imaging device includes: pixels arrayed two-dimensionally; pixel common circuits arrayed in a matrix, each shared by adjacent pixels of a certain number among the pixels; column common circuits, each provided for one of columns of the pixel common circuits, and shared by pixel common circuits belonging to a same column; column signal lines each provided for one of the columns of the pixel common circuits; and reset signal lines each provided for one of the columns of the pixel common circuits, in which an electric signal from each of the pixels is detected by a corresponding one of the pixel common circuits and read by a corresponding one of the column common circuits, and the electric signal detected by the corresponding one of the pixel common circuits is reset by a feedback path including one column signal line, one column common circuit, and one reset signal lines.Type: GrantFiled: August 1, 2013Date of Patent: January 24, 2017Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Motonori Ishii, Shigetaka Kasuga, Mitsuyoshi Mori
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Patent number: 9324757Abstract: A solid-state imaging device includes: pixels arranged in a matrix, a semiconductor substrate; a first electrode formed above the semiconductor substrate for each of the pixels; a photoelectric conversion film formed on the first electrode, for photoelectric conversion of light into signal charge; a charge accumulation region formed in the semiconductor substrate for accumulating the signal charge generated through the photoelectric conversion in the photoelectric conversion film; a contact plug for electrically connecting the first electrode and the charge accumulation region in a corresponding pixel; a high-concentration impurity region formed on a surface of the charge accumulation region, in a region in contact with the contact plug; a surface impurity region formed on the surface of the charge accumulation region, in a region not in contact with the contact plug; and a low-concentration impurity region formed between the high-concentration impurity region and the surface impurity region.Type: GrantFiled: May 16, 2014Date of Patent: April 26, 2016Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Mitsuyoshi Mori, Yutaka Hirose, Yoshihisa Kato, Yusuke Sakata, Hiroshi Masuda, Ryohei Miyagawa
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Patent number: 9287423Abstract: A solid-state imaging device in which a plurality of pixels are two-dimensionally arranged includes a silicon layer; a plurality of photodiodes which are formed in the silicon layer to correspond to the pixels and generate signal charges by performing photoelectric conversion on incident light; and a plurality of color filters formed above the silicon layer to correspond to the plurality of the pixels. A protrusion is formed in a region on a side of the silicon layer between adjacent ones of the color filters wherein the protrusion has a refractive index lower than refractive indices of the adjacent ones of the color filters and, each of the color filters is in contact with the adjacent ones of the color filters, above the protrusion.Type: GrantFiled: November 13, 2012Date of Patent: March 15, 2016Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Mitsuyoshi Mori, Toru Okino, Motonori Ishii, Shigeru Saitou, Yusuke Otake, Kazuo Fujiwara, Yasuhiro Shimada, Yutaka Hirose
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Patent number: 9197830Abstract: A solid-state imaging device includes: an epilayer; pixel electrodes; a photoelectric converting film formed above the pixel electrodes and converting incident light into electric signals; a transparent electrode formed on the photoelectric converting film; charge accumulating regions of an n-type each (i) formed in the epilayer to correspond to one of the pixel electrodes, (ii) electrically connected to the one corresponding pixel electrode, and (iii) accumulating signal charges generated by the photoelectric converting film through the photo-electrically conversion; charge barrier regions of a p-type each formed in the epilayer to contact a bottom of a corresponding one of the charge accumulating regions; and charge draining regions of an n-type each formed in the epilayer to contact a bottom of a corresponding one of the charge barrier regions.Type: GrantFiled: January 29, 2014Date of Patent: November 24, 2015Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Mitsuyoshi Mori, Yusuke Sakata, Yutaka Hirose, Ryohei Miyagawa, Hiroyuki Doi, Masafumi Tsutsui
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Patent number: 9048159Abstract: A solid-state imaging device includes: a substrate; an insulator layer formed on the substrate; a semiconductor layer formed on the insulator layer; and a silicon layer formed on the semiconductor layer. The silicon layer includes a plurality of pixels each including a photoelectric converter configured to convert light into signal charge, and a circuit configured to read the signal charge, and a refractive index of the insulator layer is lower than a refractive index of the semiconductor layer.Type: GrantFiled: October 30, 2013Date of Patent: June 2, 2015Assignee: Panasonic Intellectual Property Management Co., Ltd.Inventors: Toru Okino, Mitsuyoshi Mori, Yutaka Hirose, Yoshihisa Kato, Tsuyoshi Tanaka
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Publication number: 20150137199Abstract: A solid-state imaging device according to the present disclosure includes: a charge storage region that stores a signal charge obtained through photoelectric conversion in a photoelectric conversion film; an amplification transistor that amplifies the signal charge stored in the charge storage region in a corresponding pixel; a contact plug that is electrically connected to the charge storage region and contains a semiconductor material; and a line that is disposed above the contact plug and contains a semiconductor material. The contact plug and the charge storage region are electrically connected, and the contact plug and a gate electrode of the amplification transistor are electrically connected via the line.Type: ApplicationFiled: December 16, 2014Publication date: May 21, 2015Inventors: Mitsuyoshi MORI, Ryohei MIYAGAWA, Yoshiyuki OHMORI, Yoshihiro SATO, Yutaka HIROSE, Yusuke SAKATA, Toru OKINO
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Publication number: 20150109503Abstract: A solid-state imaging device according to the present disclosure includes pixels arranged two-dimensionally, each of the pixels including: a metal electrode; a photoelectric conversion layer that is on the metal electrode and converts light into an electrical signal; a transparent electrode on the photoelectric conversion layer; an electric charge accumulation region that is electrically connected to the metal electrode and accumulates electric charges from the photoelectric conversion layer; an amplifier transistor that applies a signal voltage according to an amount of the electric charges in the electric charge accumulation region; and a reset transistor that resets electrical potential of the electric charge accumulation region, in which the reset transistor includes a gate oxide film thicker than a gate oxide film of the amplifier transistor.Type: ApplicationFiled: December 22, 2014Publication date: April 23, 2015Inventors: Mitsuyoshi MORI, Hirohisa OHTSUKI, Yoshiyuki OHMORI, Yoshihiro SATO, Ryohei MIYAGAWA
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Patent number: 8866059Abstract: A solid-state imaging device that is configurable into a small size appropriate for expanding dynamic range includes: a photodiode which is a photoelectric conversion unit that generates charge by incident light; a MOS transistor which is connected to the photodiode and transfers the charge; a floating diffusion region which is a first accumulation unit which accumulates the charge via the MOS transistor; a MOS transistor which is a second transfer unit connected to the floating diffusion region and connected in series to the MOS transistor; and a MOS transistor which is an output unit which outputs, via the MOS transistor, a signal voltage in accordance with an amount of the charge.Type: GrantFiled: July 23, 2009Date of Patent: October 21, 2014Assignee: Panasonic CorporationInventors: Takahiko Murata, Takayoshi Yamada, Yoshihisa Kato, Shigetaka Kasuga, Mitsuyoshi Mori
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Publication number: 20140246706Abstract: A solid-state imaging device includes: pixels arranged in a matrix, a semiconductor substrate; a first electrode formed above the semiconductor substrate for each of the pixels; a photoelectric conversion film formed on the first electrode, for photoelectric conversion of light into signal charge; a charge accumulation region formed in the semiconductor substrate for accumulating the signal charge generated through the photoelectric conversion in the photoelectric conversion film; a contact plug for electrically connecting the first electrode and the charge accumulation region in a corresponding pixel; a high-concentration impurity region formed on a surface of the charge accumulation region, in a region in contact with the contact plug; a surface impurity region formed on the surface of the charge accumulation region, in a region not in contact with the contact plug; and a low-concentration impurity region formed between the high-concentration impurity region and the surface impurity region.Type: ApplicationFiled: May 16, 2014Publication date: September 4, 2014Applicant: PANASONIC CORPORATIONInventors: Mitsuyoshi MORI, Yutaka HIROSE, Yoshihisa KATO, Yusuke SAKATA, Hiroshi MASUDA, Ryohei MIYAGAWA
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Publication number: 20140146211Abstract: A solid-state imaging device includes: an epilayer; pixel electrodes; a photoelectric converting film formed above the pixel electrodes and converting incident light into electric signals; a transparent electrode formed on the photoelectric converting film; charge accumulating regions of an n-type each (i) formed in the epilayer to correspond to one of the pixel electrodes, (ii) electrically connected to the one corresponding pixel electrode, and (iii) accumulating signal charges generated by the photoelectric converting film through the photo-electrically conversion; charge barrier regions of a p-type each formed in the epilayer to contact a bottom of a corresponding one of the charge accumulating regions; and charge draining regions of an n-type each formed in the epilayer to contact a bottom of a corresponding one of the charge barrier regions.Type: ApplicationFiled: January 29, 2014Publication date: May 29, 2014Applicant: PANASONIC CORPORATIONInventors: Mitsuyoshi MORI, Yusuke SAKATA, Yutaka HIROSE, Ryohei MIYAGAWA, Hiroyuki DOI, Masafumi TSUTSUI
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Patent number: 8704321Abstract: Solid-state imaging device of the present invention is a backside-illumination-type solid-state imaging device including wiring layer formed on first surface side of semiconductor substrate; and light receiving section that photoelectrically converts light incident from second surface side that is opposite from first surface side, wherein spontaneous polarization film formed of a material having spontaneous polarization is formed on a light receiving surface of light receiving section. Accordingly, a hole accumulation layer can be formed on the light receiving surface of light receiving section, and a dark current can be suppressed.Type: GrantFiled: May 3, 2012Date of Patent: April 22, 2014Assignee: Panasonic CorporationInventors: Toru Okino, Yoshihisa Kato, Yutaka Hirose, Mitsuyoshi Mori
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Publication number: 20140103400Abstract: A solid-state imaging device includes: a first electrode formed above a semiconductor substrate; a photoelectric conversion film formed on the first electrode and for converting light into signal charges; a second electrode formed on the photoelectric conversion film; a charge accumulation region electrically connected to the first electrode and for accumulating the signal charges converted from the light by the photoelectric conversion film; a reset gate electrode for resetting the charge accumulation region; an amplification transistor for amplifying the signal charges accumulated in the charge accumulation region; and a contact plug in direct contact with the charge accumulation region, comprising a semiconductor material, and for electrically connecting to each other the first electrode and the charge accumulation region.Type: ApplicationFiled: December 18, 2013Publication date: April 17, 2014Applicant: Panasonic CorporationInventors: Yusuke SAKATA, Mitsuyoshi MORI, Yutaka HIROSE, Hiroshi MASUDA, Hitoshi KURIYAMA, Ryohei MIYAGAWA