Patents by Inventor Mizue Ishikawa
Mizue Ishikawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10734053Abstract: According to one embodiment, a magnetic memory device includes a conductive member, a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The conductive member includes a first layer. The first layer includes at least one selected from the group consisting of HfN having a NaCl structure, HfN having a fcc structure, and HfC having a NaCl structure. The first magnetic layer is separated from the first layer in a first direction. The second magnetic layer is provided between the first layer and the first magnetic layer. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer.Type: GrantFiled: February 11, 2019Date of Patent: August 4, 2020Assignee: Kabushiki Kaisha ToshibaInventors: Mizue Ishikawa, Yushi Kato, Soichi Oikawa, Hiroaki Yoda
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Publication number: 20200058338Abstract: According to one embodiment, a magnetic memory device includes a conductive member, a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The conductive member includes a first layer. The first layer includes at least one selected from the group consisting of HfN having a NaCl structure, HfN having a fcc structure, and HfC having a NaCl structure. The first magnetic layer is separated from the first layer in a first direction. The second magnetic layer is provided between the first layer and the first magnetic layer. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer.Type: ApplicationFiled: February 11, 2019Publication date: February 20, 2020Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Mizue ISHIKAWA, Yushi KATO, Soichi OIKAWA, Hiroaki YODA
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Patent number: 10490736Abstract: A magnetic memory according to an embodiment includes: first to third terminals; a nonmagnetic conductive layer including first to third regions, the second region being disposed between the first and third regions, the first region being electrically connected to the first terminal, and the third region being electrically connected to the second terminal; and a magnetoresistive element disposed to correspond to the second region, including a first magnetic layer electrically connected to the third terminal, a second magnetic layer disposed between the first magnetic layer and the second region, and a nonmagnetic layer disposed between the first and second magnetic layers, the conductive layer including at least one of an alloy including Ir and Ta, an alloy including Ir and V, an alloy including Au and V, an alloy including Au and Nb, or an alloy including Pt and V, each of the alloys having an fcc structure.Type: GrantFiled: March 6, 2018Date of Patent: November 26, 2019Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Yoshiaki Saito, Tomoaki Inokuchi, Yushi Kato, Soichi Oikawa, Mizue Ishikawa, Hiroaki Yoda
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Patent number: 10453513Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, and a controller. The conductive layer includes first and second portions, and a third portion between the first and second portions. The conductive layer includes a first metal and boron. The first magnetic layer is separated from the third portion in a first direction crossing a second direction. The second magnetic layer is provided between the third portion and the first magnetic layer. The first nonmagnetic layer is provided between the first and second magnetic layers. The controller is electrically connected to the first and second portions. The controller supplies a current to the conductive layer. The first metal includes at least one selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.Type: GrantFiled: March 12, 2018Date of Patent: October 22, 2019Assignee: Kabushiki Kaisha ToshibaInventors: Yushi Kato, Yoshiaki Saito, Mizue Ishikawa, Soichi Oikawa, Hiroaki Yoda
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Patent number: 10374150Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, first and second magnetic layers, a first nonmagnetic layer and a controller. The conductive layer includes first and second portions, and a third portion positioned between the first and second portions. The conductive layer includes a first metal. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the third portion and the first magnetic layer. The first nonmagnetic layer is provided between the first and second magnetic layers. The controller is electrically connected to the first and second portions. The second magnetic layer has first and second lattice lengths. The first lattice length is longer than the second lattice length. The controller implements a first operation of supplying a first current to the conductive layer, and a second operation of supplying a second current to the conductive layer.Type: GrantFiled: February 26, 2018Date of Patent: August 6, 2019Assignee: Kabushiki Kaisha ToshibaInventors: Yushi Kato, Yoshiaki Saito, Soichi Oikawa, Mizue Ishikawa, Hiroaki Yoda
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Patent number: 10360960Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, and a controller. The conductive layer includes a first portion, a second portion, and a third portion between the first and second portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the third portion and the first magnetic layer. The first nonmagnetic layer is provided between the first and second magnetic layers. The controller is electrically connected to the first and second portions. The third portion includes a first region and a second region. The second region is provided between the first region and the second magnetic layer. The controller implements a first operation of supplying a first current to the conductive layer, and a second operation of supplying a second current to the conductive layer.Type: GrantFiled: September 11, 2017Date of Patent: July 23, 2019Assignee: Kabushiki Kaisha ToshibaInventors: Yushi Kato, Soichi Oikawa, Mizue Ishikawa, Yoshiaki Saito, Hiroaki Yoda
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Patent number: 10283697Abstract: A magnetic memory according to an embodiment includes: a magnetoresistive device including a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer between the first magnetic layer and the second magnetic layer; a first wiring electrically connected to the first magnetic layer; a second wiring that is electrically connected to the second magnetic layer and contains an antiferromagnetic material; a third wiring crossing the second wiring; an insulating layer between the second wiring and the third wiring; a first write circuit for applying a voltage between the second wiring and the third wiring; and a read circuit electrically connected to the first wiring and the second wiring.Type: GrantFiled: September 15, 2016Date of Patent: May 7, 2019Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Tomoaki Inokuchi, Mizue Ishikawa, Hideyuki Sugiyama, Yoshiaki Saito
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Patent number: 10262711Abstract: A magnetic memory of an embodiment includes: first through third terminals; a conductive layer including first through third portions, the first portion being located between the second and third portions, the second and third portions being electrically connected to the first and second terminals respectively; and a magnetoresistive element including: a first magnetic layer electrically connected to the third terminal; a second magnetic layer disposed between the first magnetic layer and the first portion; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first nonmagnetic layer and the second magnetic layer; and a second nonmagnetic layer disposed between the second magnetic layer and the third magnetic layer, a sign of a spin Hall angle of the second nonmagnetic layer being different from a sign of a spin Hall angle of the conductive layer.Type: GrantFiled: August 31, 2017Date of Patent: April 16, 2019Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Mizue Ishikawa, Yushi Kato, Yoshiaki Saito, Soichi Oikawa, Hiroaki Yoda
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Publication number: 20190088860Abstract: A magnetic memory according to an embodiment includes: first to third terminals; a nonmagnetic conductive layer including first to third regions, the second region being disposed between the first and third regions, the first region being electrically connected to the first terminal, and the third region being electrically connected to the second terminal; and a magnetoresistive element disposed to correspond to the second region, including a first magnetic layer electrically connected to the third terminal, a second magnetic layer disposed between the first magnetic layer and the second region, and a nonmagnetic layer disposed between the first and second magnetic layers, the conductive layer including at least one of an alloy including Ir and Ta, an alloy including Ir and V, an alloy including Au and V, an alloy including Au and Nb, or an alloy including Pt and V, each of the alloys having an fcc structure.Type: ApplicationFiled: March 6, 2018Publication date: March 21, 2019Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Yoshiaki Saito, Tomoaki Inokuchi, Yushi Kato, Soichi Oikawa, Mizue Ishikawa, Hiroaki Yoda
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Publication number: 20190080741Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, and a controller. The conductive layer includes first and second portions, and a third portion between the first and second portions. The conductive layer includes a first metal and boron. The first magnetic layer is separated from the third portion in a first direction crossing a second direction. The second magnetic layer is provided between the third portion and the first magnetic layer. The first nonmagnetic layer is provided between the first and second magnetic layers. The controller is electrically connected to the first and second portions. The controller supplies a current to the conductive layer. The first metal includes at least one selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.Type: ApplicationFiled: March 12, 2018Publication date: March 14, 2019Applicant: Kabushiki Kaisha ToshibaInventors: Yushi KATO, Yoshiaki SAITO, Mizue ISHIKAWA, Soichi OIKAWA, Hiroaki YODA
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Publication number: 20190051818Abstract: According to one embodiment, a magnetic memory element includes a conductive layer, a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The first magnetic layer is separated from the conductive layer. The second magnetic layer includes iron, platinum, and boron and is provided between the conductive layer and the first magnetic layer. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The conductive layer includes a first region and a second region. The second region includes a first metal and boron and is provided between the first region and the second magnetic layer. The first region does not include boron, or a first concentration of boron in the first region is lower than a second concentration of boron in the second region.Type: ApplicationFiled: February 15, 2018Publication date: February 14, 2019Applicant: Kabushiki Kaisha ToshibaInventors: Soichi OIKAWA, Yushi Kato, Mizue Ishikawa, Yoshiaki Saito, Hiroaki Yoda
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Publication number: 20180366639Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, first and second magnetic layers, a first nonmagnetic layer and a controller. The conductive layer includes first and second portions, and a third portion positioned between the first and second portions. The conductive layer includes a first metal. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the third portion and the first magnetic layer. The first nonmagnetic layer is provided between the first and second magnetic layers. The controller is electrically connected to the first and second portions. The second magnetic layer has first and second lattice lengths. The first lattice length is longer than the second lattice length. The controller implements a first operation of supplying a first current to the conductive layer, and a second operation of supplying a second current to the conductive layer.Type: ApplicationFiled: February 26, 2018Publication date: December 20, 2018Applicant: Kabushiki Kaisha ToshibaInventors: Yushi Kato, Yoshiaki Saito, Soichi Oikawa, Mizue Ishikawa, Hiroaki Yoda
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Publication number: 20180268886Abstract: A magnetic memory of an embodiment includes: first through third terminals; a conductive layer including first through third portions, the first portion being located between the second and third portions, the second and third portions being electrically connected to the first and second terminals respectively; and a magnetoresistive element including: a first magnetic layer electrically connected to the third terminal; a second magnetic layer disposed between the first magnetic layer and the first portion; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first nonmagnetic layer and the second magnetic layer; and a second nonmagnetic layer disposed between the second magnetic layer and the third magnetic layer, a sign of a spin Hall angle of the second nonmagnetic layer being different from a sign of a spin Hall angle of the conductive layer.Type: ApplicationFiled: August 31, 2017Publication date: September 20, 2018Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Mizue ISHIKAWA, Yushi KATO, Yoshiaki SAITO, Soichi OIKAWA, Hiroaki YODA
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Publication number: 20180174634Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, and a controller. The conductive layer includes a first portion, a second portion, and a third portion between the first and second portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the third portion and the first magnetic layer. The first nonmagnetic layer is provided between the first and second magnetic layers. The controller is electrically connected to the first and second portions. The third portion includes a first region and a second region. The second region is provided between the first region and the second magnetic layer. The controller implements a first operation of supplying a first current to the conductive layer, and a second operation of supplying a second current to the conductive layer.Type: ApplicationFiled: September 11, 2017Publication date: June 21, 2018Applicant: Kabushiki Kaisha ToshibaInventors: Yushi KATO, Soichi OIKAWA, Mizue ISHIKAWA, Yoshiaki SAITO, Hiroaki YODA
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Publication number: 20180145247Abstract: A magnetic memory of an embodiment includes: a first terminal to third terminals; a first nonmagnetic layer, which is conductive, including a first portion, a second portion, and a third portion, the first portion being disposed between the second portion and the third portion, the second portion being electrically connected to the first terminal, and the third portion being electrically connected to the second terminal; a first magnetoresistive element including a first magnetic layer electrically connected to the third terminal, a second magnetic layer disposed between the first magnetic layer and the first portion, and a second nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and a first layer at least disposed between the first portion and the second magnetic layer, and including at least one of Mg, Al, Si, Hf, or a rare earth element, and at least one of oxygen or nitrogen.Type: ApplicationFiled: January 19, 2018Publication date: May 24, 2018Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Yoshiaki SAITO, Hiroaki Yoda, Yushi Kato, Mizue Ishikawa, Soichi Oikawa
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Publication number: 20180040807Abstract: A magnetic memory of an embodiment includes: a first terminal to third terminals; a first nonmagnetic layer, which is conductive, including a first portion, a second portion, and a third portion, the first portion being disposed between the second portion and the third portion, the second portion being electrically connected to the first terminal, and the third portion being electrically connected to the second terminal; a first magnetoresistive element including a first magnetic layer electrically connected to the third terminal, a second magnetic layer disposed between the first magnetic layer and the first portion, and a second nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and a first layer at least disposed between the first portion and the second magnetic layer, and including at least one of Mg, Al, Si, Hf, or a rare earth element, and at least one of oxygen or nitrogen.Type: ApplicationFiled: February 28, 2017Publication date: February 8, 2018Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Yoshiaki SAITO, Hiroaki Yoda, Yushi Kato, Mizue Ishikawa, Soichi Oikawa
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Patent number: 9842635Abstract: A spin transistor memory according to an embodiment includes: a first semiconductor region, a second semiconductor region, and a third semiconductor region, each being of a first conductivity type and disposed in a semiconductor layer; a first gate disposed above the semiconductor layer between the first semiconductor region and the second semiconductor region; a second gate disposed above the semiconductor layer between the second semiconductor region and the third semiconductor region; and a first ferromagnetic layer, a second ferromagnetic layer, and a third ferromagnetic layer disposed on the first semiconductor region, the second semiconductor region, and the third semiconductor region respectively.Type: GrantFiled: March 8, 2016Date of Patent: December 12, 2017Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Hideyuki Sugiyama, Mizue Ishikawa, Tomoaki Inokuchi, Yoshiaki Saito
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Publication number: 20170271574Abstract: A magnetic memory according to an embodiment includes: a magnetoresistive device including a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer between the first magnetic layer and the second magnetic layer; a first wiring electrically connected to the first magnetic layer; a second wiring that is electrically connected to the second magnetic layer and contains an antiferromagnetic material; a third wiring crossing the second wiring; an insulating layer between the second wiring and the third wiring; a first write circuit for applying a voltage between the second wiring and the third wiring; and a read circuit electrically connected to the first wiring and the second wiring.Type: ApplicationFiled: September 15, 2016Publication date: September 21, 2017Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Tomoaki INOKUCHI, Mizue ISHIKAWA, Hideyuki SUGIYAMA, Yoshiaki SAITO
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Patent number: 9570137Abstract: A magnetic memory includes a magnetoresistive device and a load resistance unit. The magnetoresistive device has a first resistance state and a second resistance state and includes a first ferromagnetic layer and a second ferromagnetic layer. The load resistance unit is electrically connected to the magnetoresistive device. The load resistance unit is in a first state and a second state. Differential resistance of the load resistance unit at the second state is lower than differential resistance of the load resistance unit at the first state.Type: GrantFiled: March 11, 2016Date of Patent: February 14, 2017Assignee: Kabushiki Kaisha ToshibaInventors: Hideyuki Sugiyama, Tetsufumi Tanamoto, Mizue Ishikawa, Tomoaki Inokuchi, Yoshiaki Saito
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Patent number: 9536583Abstract: A magnetic memory according to an embodiment includes: a multilayer structure including a semiconductor layer and a first ferromagnetic layer; a first wiring line electrically connected to the semiconductor layer; a second wiring line electrically connected to the first ferromagnetic layer; and a voltage applying unit electrically connected between the first wiring line and the second wiring line to apply a first voltage between the semiconductor layer and the first ferromagnetic layer during a write operation, a magnetization direction of the first ferromagnetic layer being switchable by applying the first voltage.Type: GrantFiled: November 23, 2015Date of Patent: January 3, 2017Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Tomoaki Inokuchi, Mizue Ishikawa, Hideyuki Sugiyama, Tetsufumi Tanamoto, Akira Takashima, Yoshiaki Saito